公开(公告)号：US20090068356A1

公开(公告)日：2009-03-12

申请号：US12255884

申请日：2008-10-22

申请人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

发明人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

IPC分类号： C23C16/00 ,  H01L21/3065

CPC分类号： C23C16/4404 ,  C23C16/4586 ,  H01J37/32522 ,  H01J2237/022

摘要： Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

摘要翻译： 本发明的实施例一般涉及等离子体处理室的装置和方法，其需要较少的维护和停机时间，并且比现有技术具有更高的可靠性。 在一个实施例中，该设备包括搁置在陶瓷轴上的基板支撑件，允许在大气压下与基板支撑件电连接的内轴，支撑在陶瓷支撑结构上但不固定到陶瓷支撑结构的铝基板支撑件，模锻的蓝宝石支架 衬底支撑件内部的加热元件和布置在阿基米德螺旋中的衬底支撑件内的加热元件，以减少衬底支撑件的翘曲并增加其寿命。 方法包括通过减少从室表面产生颗粒来增加室内原位清洗之间的时间。 通过腔室部件的温度控制和腔室相对于处理区域的吹扫气体的非处理区域的加压而发生减少的颗粒产生。

公开(公告)号：US20120164829A1

公开(公告)日：2012-06-28

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/28

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US07572337B2

公开(公告)日：2009-08-11

申请号：US11131010

申请日：2005-05-16

申请人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

发明人： Juan Carlos Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom K. Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Hoen Kim ,  Hichem M'Saad ,  Daemian Raj

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US07371427B2

公开(公告)日：2008-05-13

申请号：US10442579

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： B08B9/00 ,  B05D7/22

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US08679987B2

公开(公告)日：2014-03-25

申请号：US13468776

申请日：2012-05-10

申请人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/47 ,  H01L21/312

CPC分类号： H01L21/02527 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.

摘要翻译： 本文所述的实施例涉及一种用于处理衬底的方法。 在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和 约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射 高于约200℃

公开(公告)号：US08283237B2

公开(公告)日：2012-10-09

申请号：US12978129

申请日：2010-12-23

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/30 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

摘要翻译： 通过硅通孔的制造方法包括通过使用其间的粘合剂层将硅板的前表面粘合到载体上来形成基板，以暴露硅板的背面。 氮化硅钝化层沉积在衬底的硅板的暴露的背面上。 在硅板中蚀刻多个通孔，通孔包括侧壁和底壁。 金属导体沉积在通孔中以形成多个通硅通孔。

公开(公告)号：US08563095B2

公开(公告)日：2013-10-22

申请号：US12724396

申请日：2010-03-15

申请人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

IPC分类号： H05H1/24 ,  C23C16/34

CPC分类号： H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

摘要翻译： 描述了在衬底的特征上形成包括氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。

公开(公告)号：US08329575B2

公开(公告)日：2012-12-11

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US06843881B2

公开(公告)日：2005-01-18

申请号：US10115526

申请日：2002-04-02

申请人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

发明人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  G01N21/76 ,  G05D27/02 ,  H01L21/306

CPC分类号： G05D27/02 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/76

摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

摘要翻译： 在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及 排气以排出清洁气体。 检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。 控制器接收信号并评估信号以确定清洁过程的端点。