摘要:
A deformable reflector includes a plurality of MEMS devices, each having an electrode membrane having a reflective surface thereon, a flat surface, and a pulldown electrode formed in the flat substrate. The electrode membrane has substantially a same flatness of the flat substrate when the electrode membrane comes into contact with the flat substrate across a majority of its surface area in response to a voltage being applied to the pulldown electrode. The electrode membrane has a two-dimensional curvature when no voltage is applied to the pulldown electrode.
摘要:
The high-pixel-count uncooled thermal imaging arrays disclosed herein have liquid crystal (LC) microcavity transducers separate from the read-out integrated circuit (ROIC). The transducer converts incident infrared (IR) radiation in birefringence changes that can be measured with visible light. In other words, the system uses the temperature sensitivity of the LC birefringence to convert the IR scene to a visible image. Measurements on sample arrays indicate that the LC material quality is similar to that of bulk samples and has good noise performance. Additionally, high-fill-factor arrays on fused-silica substrates may be processed to enable optimization of conditions for greatly improved temperature sensitivity. An additional IR absorber layer may be integrated into the process to tune the structure for the infrared.
摘要:
The high-pixel-count uncooled thermal imaging arrays disclosed herein have liquid crystal (LC) microcavity transducers separate from the read-out integrated circuit (ROIC). The transducer converts incident infrared (IR) radiation in birefringence changes that can be measured with visible light. In other words, the system uses the temperature sensitivity of the LC birefringence to convert the IR scene to a visible image. Measurements on sample arrays indicate that the LC material quality is similar to that of bulk samples and has good noise performance. Additionally, high-fill-factor arrays on fused-silica substrates may be processed to enable optimization of conditions for greatly improved temperature sensitivity. An additional IR absorber layer may be integrated into the process to tune the structure for the infrared.
摘要:
A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
摘要:
A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.
摘要:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mateGOVERNMENT SUPPORTWork described herein was supported by the U.S. Air Force.
摘要:
A method of producing sheets of crystalline material is disclosed which is employed in the construction of tandem solar cells. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is then separated and used to form a tandem solar cell while the substrate can be reused to form additional sheets.
摘要:
A method of applying an electrical contact and an anodic reflection coating to an n.sup.+ layer of a direct gap semiconductor device, comprising applying an anodizable metal contact to the n.sup.+ layer and thereafter anodizing the n.sup.+ layer whereby its thickness is reduced and an antireflection layer is formed thereover.
摘要:
Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n.sup.+ /p/p.sup.+ structure in which the n.sup.+ top layer is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n.sup.+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
摘要翻译:公开了基于诸如GaAs的直接间隙半导体材料的多层的浅同相结合太阳能电池的改进以及它们的制造。 浅同相结合太阳能电池具有n + / p / p +结构,其中n +顶层被限制为允许在较低半导体层中发生显着的载流子产生的厚度。 在n +顶层上施加阳极抗反射涂层,并且用于施加抗反射涂层的特别优选的方法是通过阳极氧化。 如果需要,这些太阳能电池可以在相对便宜的基底上生长,例如硅或锗。
摘要:
A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves. In one embodiment of the invention, the fixed and moveable electrodes are configured within an array of similar devices, and each device or groups of devices in the array are individually addressable to actuate the moveable electrodes. In another embodiment of the invention, there is provided a reconfigurable circuit including an array of actuatable devices which are addressed individually or in selected groups, each of the actuatable devices having a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode.