利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.024 秒)

    REDUCED ELECTROMIGRATION AND STRESSED INDUCED MIGRATION OF CU WIRES BY SURFACE COATING
    1.
    发明申请
    REDUCED ELECTROMIGRATION AND STRESSED INDUCED MIGRATION OF CU WIRES BY SURFACE COATING 审中-公开
    通过表面涂层降低CU电线的电导率和受压感应迁移

    公开(公告)号：US20090142924A1

    公开(公告)日：2009-06-04

    申请号：US12341856

    申请日：2008-12-22

    申请人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith Marie Rubino ,  Carlos Juan Sambucetti ,  Anthony Kendall Stamper

    发明人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith Marie Rubino ,  Carlos Juan Sambucetti ,  Anthony Kendall Stamper

    IPC分类号： H01L21/441

    CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76864 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing. We have used electroless metal coatings, such as CoWP, CoSnP and Pd, to illustrate significant reliability benefits, although chemical vapor deposition (CVD) of metals or metal forming compounds can be employed.

    摘要翻译： 本发明的想法是在沉积层间电介质之前，通过1-20nm厚的金属层将芯片上互连（BEOL）布线中的图案化Cu导线的自由表面涂覆。 该涂层足够薄，以便消除对通过抛光的附加平面化的需要，同时提供了防止氧化和表面或Cu的扩散的保护，这已被发明人鉴定为导致金属线路故障的主要贡献者通过电迁移和热 压力消除。 此外，金属层增加了Cu和电介质之间的粘合强度，从而进一步增加寿命并且有助于工艺产量。 自由表面是在镶嵌工艺中的CMP（化学机械抛光）或通过图形化Cu布线的干蚀刻工艺的直接结果。 提出通过选择性方法将金属覆盖层沉积到Cu上以最小化进一步的加工。 尽管可以使用金属或金属形成化合物的化学气相沉积（CVD），但我们已经使用了无电金属涂层，例如CoWP，CoSnP和Pd来说明显着的可靠性优点。

    Method for forming Co-W-P-Au films
    3.
    发明授权
    Method for forming Co-W-P-Au films 失效
    Co-W-P-Au薄膜的制备方法

    公开(公告)号：US06323128B1

    公开(公告)日：2001-11-27

    申请号：US09320499

    申请日：1999-05-26

    申请人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

    发明人： Carlos Juan Sambucetti ,  Judith Marie Rubino ,  Daniel Charles Edelstein ,  Cyryl Cabral, Jr. ,  George Frederick Walker ,  John G Gaudiello ,  Horatio Seymour Wildman

    IPC分类号： H01L21441

    CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1841 ,  C23C18/44 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions. After the pre-treated substrate is rinsed in a first rinsing step by distilled water, the substrate is electroless plated a Co—W—P film on the surfaces of the copper conductive regions in a first plating solution that contains cobalt ions, tungstate ions, citrate ions and a reducing agent. After the substrate coated with the Co—W—P film is rinsed in a second rinsing step by distilled water, the substrate is immersed in a second electroless plating solution for depositing a Au layer on top of the Co—W—P film. The present invention novel quaternary alloy film can be used as an effective diffusion barrier layer between a copper interconnect and silicon substrate or SiO2 dielectric layers.

    摘要翻译： 公开了一种用于在半导体结构中的铜互连上用作扩散阻挡层的Co-W-P-Au的四元合金膜的形成方法和包含这种膜的器件。 在该方法中，首先通过两个单独的预处理步骤对具有铜导电区域的基板进行预处理。 在第一步骤中，将衬底浸入H 2 SO 4冲洗溶液中，接着在含有钯离子的溶液中浸渍一段足以使离子沉积在铜导电区域表面上的时间。 然后将基底浸入含有至少15g / l柠檬酸钠或EDTA的溶液中，以从铜导电区域的表面除去过量的钯离子。 在通过蒸馏水在第一冲洗步骤中冲洗预处理的基材之后，在包含钴离子，钨酸根离子，柠檬酸根离子的第一电镀液中，在铜导电区域的表面上化学镀Co-WP膜 和还原剂。 在用Co-W-P膜涂布的基材在第二次漂洗步骤中用蒸馏水冲洗后，将基板浸渍在Co-W-P膜顶部沉积Au层的第二无电镀液中。 本发明的新型四元合金膜可以用作铜互连和硅衬底或SiO 2电介质层之间的有效扩散阻挡层。

    Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
    5.
    发明授权
    Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect 有权
    芯片到布线接口，单个金属合金层应用于铜互连表面

    公开(公告)号：US06573606B2

    公开(公告)日：2003-06-03

    申请号：US09881444

    申请日：2001-06-14

    申请人： Carlos Juan Sambucetti ,  Xiaomeng Chen ,  Soon-Cheon Seo ,  Birenda Nath Agarwala ,  Chao-Kun Hu ,  Naftali Eliahu Lustig ,  Stephen Edward Greco

    发明人： Carlos Juan Sambucetti ,  Xiaomeng Chen ,  Soon-Cheon Seo ,  Birenda Nath Agarwala ,  Chao-Kun Hu ,  Naftali Eliahu Lustig ,  Stephen Edward Greco

    IPC分类号： H01L2144

    CPC分类号： H01L23/53238 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In the invention an electrically isolated copper interconnect structural interface is provided involving a single, about 50-300 A thick, alloy capping layer, that controls diffusion and electromigration of the interconnection components and reduces the overall effective dielectric constant of the interconnect; the capping layer being surrounded by a material referred to in the art as hard mask material that can provide a resist for subsequent reactive ion etching operations, and there is also provided the interdependent process steps involving electroless deposition in the fabrication of the structural interface. The single layer alloy metal barrier in the invention is an alloy of the general type A—X—Y, where A is a metal taken from the group of cobalt (Co) and nickel (Ni), X is a member taken from the group of tungsten (W), tin (Sn), and silicon (Si), and Y is a member taken from the group of phosphorous (P) and boron (B); having a thickness in the range of 50 to 300 Angstroms.

    摘要翻译： 在本发明中，提供了电隔离的铜互连结构界面，其涉及单个约50-300A厚的合金覆盖层，其控制互连部件的扩散和电迁移并且降低互连的整体有效介电常数; 封盖层被本领域中称为材料所包围的材料包围，其可以为随后的反应离子蚀刻操作提供抗蚀剂，并且还提供了在结构界面的制造中涉及无电沉积的相互依赖的工艺步骤。 本发明中的单层合金金属阻挡层是一般型AXY的合金，其中A是从钴（Co）和镍（Ni）中取出的金属，X是取自钨（W ），锡（Sn）和硅（Si），Y是从磷（P）和硼（B）取代的成员; 厚度在50至300埃的范围内。

    Water based selectable charge magnetic inks
    8.
    发明授权
    Water based selectable charge magnetic inks 失效
    水性可选充电磁性油墨

    公开(公告)号：US4107063A

    公开(公告)日：1978-08-15

    申请号：US773578

    申请日：1977-03-02

    申请人： Zlata Kovac ,  Carlos Juan Sambucetti

    发明人： Zlata Kovac ,  Carlos Juan Sambucetti

    IPC分类号： C09D11/00 ,  C09C1/24 ,  C09D5/23 ,  H01F1/44 ,  H01F41/16 ,  H01F1/28

    CPC分类号： C09C1/24 ,  H01F1/44 ,  H01F41/16 ,  C01P2006/42

    摘要： Water based magnetic colloidal fluids, useable as inks, when prepared by coating chemically precipitated magnetite (Fe.sub.3 O.sub.4) with an adsorption site providing coating agent including certain organic anions, such as sulfates, sulfonates or amino carboxilates, and then dispersing the coated product with non-ionic, anionic or cationic surfactants may exhibit selectably cationic, anionic or non-ionic charge responsiveness.

    摘要翻译： 当通过涂覆化学沉淀的磁铁矿（Fe3O4）的吸附位置提供包括某些有机阴离子（例如硫酸盐，磺酸盐或氨基羧酸盐）的包被剂制备时，可用作油墨的水基磁性胶体液体， 离子，阴离子或阳离子表面活性剂可以显示出选择性的阳离子，阴离子或非离子电荷响应性。

    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer
    9.
    发明申请
    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer 审中-公开
    用于通过基板晶片制造具有完全金属化通孔的封装接口基板晶片的技术

    公开(公告)号：US20090302454A1

    公开(公告)日：2009-12-10

    申请号：US12462980

    申请日：2009-08-11

    申请人： Yu- Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    发明人： Yu- Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H05K3/422 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K2201/09563 ,  H05K2201/10378 ,  H05K2203/025 ,  H01L2924/00

    摘要： The invention is the technology of providing a packaging intermediate product that can serve as an interface substrate that is to be positioned between different circuitry types where the dimensions are approaching the sub 100 micrometer range. The invention involves a dielectric wafer structure where the first and second area surfaces of the wafer are separated by a distance that is of the order of the electrical via design length, and an array of spaced vias through the wafer arranged with each via filled with metal surrounded by a chemical metal deposition promoting layer with each via terminating flush with a wafer surface. The wafer structure is achieved by forming an array of blind via openings through the first surface of the dielectric wafer to a depth approaching the via design length, lining the walls for adhesion enhancement, filling the blind via openings completely with a chemically deposited metal, removing material at the first wafer surface thereby planarizing the filled vias, and removing material at the second wafer surface thereby exposing the vias at the design length.

    摘要翻译： 本发明是提供一种包装中间产品的技术，该包装中间产品可以用作界面基底，该界面基底将位于尺寸接近亚100微米范围的不同电路类型之间。 本发明涉及一种电介质晶片结构，其中晶片的第一和第二区域表面被隔开距离为电通孔设计长度的数量级，并且通过晶片布置的间隔开的通孔阵列，每个通孔填充有金属 被化学金属沉积促进层围绕，每个通孔终止与晶片表面齐平。 晶片结构通过形成通过介电晶片的第一表面的盲孔通孔的阵列达到接近通孔设计长度的深度来实现，衬里壁用于粘附增强，用化学沉积的金属完全填充盲孔通孔，去除 材料，从而使填充的通孔平坦化，以及在第二晶片表面移除材料，从而在设计长度处露出通孔。