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    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer
    1.
    发明申请
    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer 审中-公开
    用于通过基板晶片制造具有完全金属化通孔的封装接口基板晶片的技术

    公开(公告)号：US20090302454A1

    公开(公告)日：2009-12-10

    申请号：US12462980

    申请日：2009-08-11

    申请人： Yu- Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    发明人： Yu- Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H05K3/422 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K2201/09563 ,  H05K2201/10378 ,  H05K2203/025 ,  H01L2924/00

    摘要： The invention is the technology of providing a packaging intermediate product that can serve as an interface substrate that is to be positioned between different circuitry types where the dimensions are approaching the sub 100 micrometer range. The invention involves a dielectric wafer structure where the first and second area surfaces of the wafer are separated by a distance that is of the order of the electrical via design length, and an array of spaced vias through the wafer arranged with each via filled with metal surrounded by a chemical metal deposition promoting layer with each via terminating flush with a wafer surface. The wafer structure is achieved by forming an array of blind via openings through the first surface of the dielectric wafer to a depth approaching the via design length, lining the walls for adhesion enhancement, filling the blind via openings completely with a chemically deposited metal, removing material at the first wafer surface thereby planarizing the filled vias, and removing material at the second wafer surface thereby exposing the vias at the design length.

    摘要翻译： 本发明是提供一种包装中间产品的技术，该包装中间产品可以用作界面基底，该界面基底将位于尺寸接近亚100微米范围的不同电路类型之间。 本发明涉及一种电介质晶片结构，其中晶片的第一和第二区域表面被隔开距离为电通孔设计长度的数量级，并且通过晶片布置的间隔开的通孔阵列，每个通孔填充有金属 被化学金属沉积促进层围绕，每个通孔终止与晶片表面齐平。 晶片结构通过形成通过介电晶片的第一表面的盲孔通孔的阵列达到接近通孔设计长度的深度来实现，衬里壁用于粘附增强，用化学沉积的金属完全填充盲孔通孔，去除 材料，从而使填充的通孔平坦化，以及在第二晶片表面移除材料，从而在设计长度处露出通孔。

    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer
    2.
    发明授权
    Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer 有权
    用于通过基板晶片制造具有完全金属化通孔的封装接口基板晶片的技术

    公开(公告)号：US07880305B2

    公开(公告)日：2011-02-01

    申请号：US10290049

    申请日：2002-11-07

    申请人： Yu-Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    发明人： Yu-Ting Cheng ,  Sherif A. Goma ,  John Harold Magerlein ,  Sampath Purushothaman ,  Carlos Juan Sambucetti ,  George Frederick Walker

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H05K3/422 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K2201/09563 ,  H05K2201/10378 ,  H05K2203/025 ,  H01L2924/00

    摘要： The invention is the technology of providing a packaging intermediate product that can serve as an interface substrate that is to be positioned between different circuitry types where the dimensions are approaching the sub 100 micrometer range. The invention involves a dielectric wafer structure where the first and second area surfaces of the wafer are separated by a distance that is of the order of the electrical via design length, and an array of spaced vias through the wafer arranged with each via filled with metal surrounded by a chemical metal deposition promoting layer with each via terminating flush with a wafer surface. The wafer structure is achieved by forming an array of blind via openings through the first surface of the dielectric wafer to a depth approaching the via design length, lining the walls for adhesion enhancement, filling the blind via openings completely with a chemically deposited metal, removing material at the first wafer surface thereby planarizing the filled vias, and removing material at the second wafer surface thereby exposing the vias at the design length.

    摘要翻译： 本发明是提供一种包装中间产品的技术，该包装中间产品可以用作界面基底，该界面基底将位于尺寸接近亚100微米范围的不同电路类型之间。 本发明涉及一种电介质晶片结构，其中晶片的第一和第二区域表面被隔开距离为电通孔设计长度的数量级，并且通过晶片布置的间隔开的通孔阵列，每个通孔填充有金属 被化学金属沉积促进层围绕，每个通孔终止与晶片表面齐平。 晶片结构通过形成通过介电晶片的第一表面的盲孔通孔的阵列达到接近通孔设计长度的深度来实现，衬里壁用于粘附增强，用化学沉积的金属完全填充盲孔通孔，去除 材料，从而使填充的通孔平坦化，以及在第二晶片表面移除材料，从而在设计长度处露出通孔。