摘要:
A semiconductor device and a fabrication method of the same are proposed, in which at least one electronic component is firstly mounted on a first substrate, and then the first substrate is attached onto a semiconductor chip or a second substrate. Further, with the chip being deposited on the second substrate, electrical connection is established among the first substrate, the second substrate and the chip. This combined structure is subsequently subjected to molding, ball implantation and singulation processes, and thus completes the fabrication of the semiconductor device. Such a semiconductor device provides significant advantages, including prevention of the occurrence of wire short-circuiting, no need to alter the substrate design, no need to use a circuit pattern with fine pitches or an expensive substrate integrated with electronic components.
摘要:
A substrate and a fabrication method thereof are proposed, with at least a check point being formed on the substrate. Prior to wire bonding and/or molding processes, cleanness of the substrate (cleaned by plasma) is determined according to color variation of the check point, so as to allow only cleaned and contamination-free substrates to be subsequently formed with bonding wires and encapsulants thereon. Thereby, qualities of wire-bonded electrical connection and encapsulant adhesion for the substrate can be assured, which helps prevent the occurrence of delamination between the encapsulant and the substrate. Moreover, the check point formed on the substrate is made during general substrate fabrication by using current equipment and technique, and in a manner as not to interfere with trace routability on the substrate; thereby, costs and complexity of substrate fabrication would not undesirably increased.
摘要:
A semiconductor device and a fabrication method of the same are proposed, in which at least one electronic component is firstly mounted on a first substrate, and then the first substrate is attached onto a semiconductor chip or a second substrate. Further, with the chip being deposited on the second substrate, electrical connection is established among the first substrate, the second substrate and the chip. This combined structure is subsequently subjected to molding, ball implantation and singulation processes, and thus completes the fabrication of the semiconductor device. Such a semiconductor device provides significant advantages, including prevention of the occurrence of wire short-circuiting, no need to alter the substrate design, no need to use a circuit pattern with fine pitches or an expensive substrate integrated with electronic components.
摘要:
A semiconductor chip package is formed to be capable of reducing moisture erosion by configuring the bonding finger, the plating-conduction-line, and the trace on the chip carrier therein in such a way that the length of path for moisture to penetrate and to reach the bonding finger through a plating-conduction-line is significantly longer than those implemented in a conventional chip package.
摘要:
A semiconductor chip package is formed to be capable of reducing moisture erosion by configuring the bonding finger, the plating-conduction-line, and the trace on the chip carrier therein in such a way that the length of path for moisture to penetrate and to reach the bonding finger through a plating-conduction-line is significantly longer than those implemented in a conventional chip package.
摘要:
A semiconductor package having a low profile is disclosed. In embodiments, a surface mounted component may be mounted directly to the core of the semiconductor package substrate, so that there is no conductive layer, plating layers or solder paste between the component and the substrate core. The surface mounted component may be any type of component which may be surface mounted on a substrate according to an SMT process, including for example passive components and various packaged semiconductors.
摘要:
Methods of forming a semiconductor package including a single-sided substrate are disclosed. In a first embodiment of the present invention, a substrate may include a conductive layer on a top surface of the substrate, i.e., on the same side of the substrate as where the die are mounted. In a second embodiment of the present invention, a substrate may include a conductive layer on a bottom of the substrate, i.e., on the opposite side of the substrate as where the die are mounted.
摘要:
A semiconductor die substrate panel is disclosed including a minimum kerf width between adjoining semiconductor package outlines on the panel, while ensuring electrical isolation of plated electrical terminals. By reducing the width of a boundary between adjoining package outlines, additional space is gained on a substrate panel for semiconductor packages.
摘要:
A substrate, and a semiconductor die package formed therefrom, are disclosed which include a distributed plating pattern for reducing mechanical stress on the semiconductor die. The substrate according to embodiments of the invention may include traces and contact pads plated in a double image plating process. Additionally, the substrate may include dummy plating areas including plating material. The plated vias and/or traces and the plating material within the dummy plating areas provide a plating pattern which is evenly distributed across the surface of the substrate. The even distribution of the plating pattern prevents peaks and valleys in the finished substrate.
摘要:
A semiconductor package is proposed, in which a substrate is formed with a chip bonding area and a plurality of bond fingers surrounding the chip bonding area, and a plurality of bridging elements are disposed in a stagger manner between the chip bonding area and the bond fingers on the substrate. Multiple wire bonding processes are performed to bond first gold wires between the chip and the bridging elements, and bond second gold wires between the bridging elements and the bond fingers. This therefore significantly shortens a wire bonding distance as compared with only one time of wire bonding for electrically connecting the chip to the substrate. As a result, wire bond operability is improved, and the shortened wire bonding distance reduces wire length so as to enhance resistance of the gold wires to mold flow impact during molding, thereby preventing wire sweeping or wire sagging from occurrence.