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公开(公告)号：US09979356B2
公开(公告)日：2018-05-22
申请号：US14573927
申请日：2014-12-17
CPC分类号： H03F1/083 , H03F1/0288 , H03F3/195 , H03F2200/451 , H03F2200/537 , H03F2200/541
摘要： A method, packaged semiconductor device, and system for controlling a secondary amplifier output current based on an input signal received from an amplifier input, converting electrical energy to magnetic energy at a secondary amplifier output inductor, coupling the magnetic energy from the secondary amplifier output inductor to a primary amplifier output inductor, converting the coupled magnetic energy to induced electrical energy at the primary amplifier output inductor, combining the induced electrical energy with output electrical energy from a primary amplifier gain element, and applying a combined electrical energy including the output electrical energy and the induced electrical energy to a primary amplifier load are provided.
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公开(公告)号：US20160181992A1
公开(公告)日：2016-06-23
申请号：US14573927
申请日：2014-12-17
CPC分类号： H03F1/083 , H03F1/0288 , H03F3/195 , H03F2200/451 , H03F2200/537 , H03F2200/541
摘要： A method, packaged semiconductor device, and system for controlling a secondary amplifier output current based on an input signal received from an amplifier input, converting electrical energy to magnetic energy at a secondary amplifier output inductor, coupling the magnetic energy from the secondary amplifier output inductor to a primary amplifier output inductor, converting the coupled magnetic energy to induced electrical energy at the primary amplifier output inductor, combining the induced electrical energy with output electrical energy from a primary amplifier gain element, and applying a combined electrical energy including the output electrical energy and the induced electrical energy to a primary amplifier load are provided.
摘要翻译： 一种方法，封装的半导体器件和用于基于从放大器输入接收的输入信号来控制次级放大器输出电流的系统，将电能转换为次级放大器输出电感器处的磁能，将次级放大器输出电感器的磁能耦合 将主耦合的磁能转换成在主放大器输出电感器处的感应电能，将感应的电能与来自主放大器增益元件的输出电能相结合，并施加包括输出电能的组合电能 并且提供对主放大器负载的感应电能。
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3.发明申请INTEGRATED PASSIVE DEVICE ASSEMBLIES FOR RF AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF 有权用于射频放大器的集成无源器件组件及其制造方法公开(公告)号：US20150381121A1
公开(公告)日：2015-12-31
申请号：US14317572
申请日：2014-06-27
IPC分类号： H03F3/19 , H01L25/16 , H01L49/02 , H03F3/21 , H01L23/31 , H01L23/04 , H01L23/00 , H03F1/56 , H01L25/00 , H01L21/56
CPC分类号： H03F3/21 , H01G4/385 , H01G4/40 , H01L23/047 , H01L23/481 , H01L23/488 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L25/50 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48111 , H01L2224/49052 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1304 , H01L2924/13091 , H01L2924/19104 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
摘要翻译： 集成无源器件（IPD）组件的实施例包括形成在半导体衬底上的第一电容器，其中第一电容器包括第一电容器电极，第二电容器电极和将第一电容器电极与第二电容器电绝缘的电介质材料 电极。 IPD组件还包括暴露在IPD组件的顶表面处并电耦合到第二电容器电极的第一接触焊盘和暴露在IPD的顶表面处的第二接触焊盘。 第二电容器耦合到IPD的顶表面，并且包括电耦合到第一接触焊盘的第一端子和电耦合到第二接触焊盘的第二端子。 IPD组件可以包括在封装的RF器件中，形成输出阻抗匹配电路的一部分和封装频率终止电路。
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4.发明申请SEMICONDUCTOR PACKAGE AND SYSTEM WITH AN ISOLATION STRUCTURE TO REDUCE ELECTROMAGNETIC COUPLING 有权具有隔离结构的半导体封装和系统，以减少电磁耦合公开(公告)号：US20150311131A1
公开(公告)日：2015-10-29
申请号：US14261899
申请日：2014-04-25
IPC分类号： H01L23/053 , H01L23/60
CPC分类号： H01L24/49 , H01L23/3121 , H01L23/552 , H01L24/05 , H01L24/06 , H01L24/48 , H01L2224/04042 , H01L2224/05553 , H01L2224/05599 , H01L2224/06135 , H01L2224/45099 , H01L2224/48195 , H01L2224/48247 , H01L2224/49109 , H01L2224/49111 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/10161 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A system and method for packaging a semiconductor device that includes a structure to reduce electromagnetic coupling is presented. The semiconductor device has a substrate on which a first circuit and a second circuit with inputs and outputs are formed proximate to each other. An isolation structure of electrically conductive material is located between components of the first and second circuits, the isolation structure being configured to reduce inductive coupling between those components during an operation of the semiconductor device. The isolation structure may be positioned on or over exterior surfaces of the semiconductor device housing or inside the housing. In one embodiment, the isolation structure includes a first leg extending transverse to the surface of the substrate and a first cross member connected to and projecting from the first leg over the substrate.
摘要翻译： 提出了一种用于封装包括减少电磁耦合的结构的半导体器件的系统和方法。 半导体器件具有基板，第一电路和具有输入和输出的第二电路彼此靠近地形成。 导电材料的隔离结构位于第一和第二电路的部件之间，隔离结构被配置为在半导体器件的操作期间减小这些部件之间的电感耦合。 隔离结构可以定位在半导体器件外壳的外表面上或者外壳的外表面上。 在一个实施例中，隔离结构包括横向于衬底的表面延伸的第一腿部，以及连接到第一腿部并从基底突出的第一横向构件。
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5.发明授权Semiconductor device with an isolation structure coupled to a cover of the semiconductor device 有权具有耦合到半导体器件的盖的隔离结构的半导体器件公开(公告)号：US09349693B2
公开(公告)日：2016-05-24
申请号：US14451962
申请日：2014-08-05
IPC分类号： H01L29/84 , H01L23/552 , H01L23/053 , H01L21/52
CPC分类号： H01L23/552 , H01L21/52 , H01L23/053 , H01L23/057 , H01L23/5386 , H01L23/585 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/50 , H01L2223/6611 , H01L2223/6644 , H01L2224/04042 , H01L2224/48091 , H01L2224/48195 , H01L2224/48227 , H01L2224/48247 , H01L2224/49111 , H01L2224/49112 , H01L2224/49113 , H01L2224/49175 , H01L2924/00014 , H01L2924/13091 , H01L2924/1421 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/213 , H03F2200/222 , H03F2200/451 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A system and method for packaging a semiconductor device that includes a structure to reduce electromagnetic coupling are presented. The semiconductor device is formed on a substrate. A cover is affixed to the substrate so as to extend over the semiconductor device. An isolation structure of electrically conductive material is coupled to the cover in between components of the semiconductor device, with the isolation structure being configured to reduce inductive coupling between those components during an operation of the semiconductor device. In one version, the isolation structure includes a first leg extending from a ground connection along a side wall of the cover to a cross member contiguous with a primary cover wall that extends over the semiconductor device between the components to be isolated electromagnetically.
摘要翻译： 提出了一种用于封装包括减少电磁耦合的结构的半导体器件的系统和方法。 半导体器件形成在衬底上。 将覆盖物固定到基板上以便在半导体器件上延伸。 导电材料的隔离结构在半导体器件的部件之间耦合到覆盖层，隔离结构被配置为在半导体器件的操作期间减少这些部件之间的电感耦合。 在一个版本中，隔离结构包括从沿着盖的侧壁的接地连接部延伸到与主覆盖壁邻接的横向构件的第一腿部，所述横向构件在要被隔离的部件之间在半导体器件上延伸以被电磁隔离。
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公开(公告)号：US4056710A
公开(公告)日：1977-11-01
申请号：US677715
申请日：1976-04-16
摘要： A system for decoding encoded character information characterized by a plurality of bars of alternating light reflective characteristics of one or more widths in applications such as reader/scanner systems utilizing a decision tree technique that enables decoding to take place on line in real time.
摘要翻译： 一种用于解码编码字符信息的系统，其特征在于在诸如使用能够实时解码在线实时解码的决策树技术的应用中的一个或多个宽度的交替光反射特性的多个条。
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7.发明授权Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof 有权用于RF放大器的集成无源器件组件及其制造方法公开(公告)号：US09438184B2
公开(公告)日：2016-09-06
申请号：US14317572
申请日：2014-06-27
IPC分类号： H01L21/8242 , H01L29/86 , H01L29/06 , H03F3/21 , H01L25/00 , H01L25/16 , H01L23/00 , H03F1/56 , H01L23/047 , H03F3/195 , H03F3/193
CPC分类号： H03F3/21 , H01G4/385 , H01G4/40 , H01L23/047 , H01L23/481 , H01L23/488 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L25/50 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48111 , H01L2224/49052 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1304 , H01L2924/13091 , H01L2924/19104 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
摘要翻译： 集成无源器件（IPD）组件的实施例包括形成在半导体衬底上的第一电容器，其中第一电容器包括第一电容器电极，第二电容器电极和将第一电容器电极与第二电容器电绝缘的电介质材料 电极。 IPD组件还包括暴露在IPD组件的顶表面处并电耦合到第二电容器电极的第一接触焊盘和暴露在IPD的顶表面处的第二接触焊盘。 第二电容器耦合到IPD的顶表面，并且包括电耦合到第一接触焊盘的第一端子和电耦合到第二接触焊盘的第二端子。 IPD组件可以包括在封装的RF器件中，形成输出阻抗匹配电路的一部分和封装频率终止电路。
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公开(公告)号：US09032841B2
公开(公告)日：2015-05-19
申请号：US13459707
申请日：2012-04-30
申请人： Paul D. Cashatt , Darryl I. Hudson , Michael E. Watts , Cory J. Deppert , Michael G. Eddingfield
发明人： Paul D. Cashatt , Darryl I. Hudson , Michael E. Watts , Cory J. Deppert , Michael G. Eddingfield
IPC分类号： F16H57/037 , F16H57/03 , F16H57/02 , F16H57/025
CPC分类号： F16H57/03 , F16H57/025 , F16H2057/02013 , F16H2057/02056 , Y10T74/2186
摘要： A housing for a transmission is disclosed. The housing may have a plurality of integrally-formed walls that together create an enclosure with an open first end and an open second end disposed axially opposite the first end. The housing may also have a first flange located at the first end of the enclosure and configured to engage an input housing of an engine, and a second flange located at the second end of the enclosure and configured to engage a differential housing. The plurality of integrally formed walls includes a lower wall having at least one impingement protection feature.
摘要翻译： 公开了一种用于变速箱的壳体。 壳体可以具有多个整体形成的壁，其一起产生具有敞开的第一端和与第一端轴向相对设置的开放的第二端的外壳。 壳体还可以具有位于壳体的第一端处的第一凸缘并且构造成接合发动机的输入壳体，以及位于壳体的第二端处并且被配置为接合差速器壳体的第二凸缘。 多个整体形成的壁包括具有至少一个冲击保护特征的下壁。
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公开(公告)号：US20130283971A1
公开(公告)日：2013-10-31
申请号：US13459707
申请日：2012-04-30
申请人： Paul D. CASHATT , Darryl I. Hudson , Michael E. Watts , Cory J. Deppert , Michael G. Eddingfield
发明人： Paul D. CASHATT , Darryl I. Hudson , Michael E. Watts , Cory J. Deppert , Michael G. Eddingfield
IPC分类号： F16H57/037
CPC分类号： F16H57/03 , F16H57/025 , F16H2057/02013 , F16H2057/02056 , Y10T74/2186
摘要： A housing for a transmission is disclosed. The housing may have a plurality of integrally-formed walls that together create an enclosure with an open first end and an open second end disposed axially opposite the first end. The housing may also have a first flange located at the first end of the enclosure and configured to engage an input housing of an engine, and a second flange located at the second end of the enclosure and configured to engage a differential housing. The plurality of integrally formed walls includes a lower wall having at least one impingement protection feature.
摘要翻译： 公开了一种用于变速箱的壳体。 壳体可以具有多个整体形成的壁，其一起产生具有敞开的第一端和与第一端轴向相对设置的开放的第二端的外壳。 壳体还可以具有位于壳体的第一端处的第一凸缘并且构造成接合发动机的输入壳体，以及位于壳体的第二端处并且被配置为接合差速器壳体的第二凸缘。 多个整体形成的壁包括具有至少一个冲击保护特征的下壁。
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10.发明申请SEMICONDUCTOR DEVICE WITH AN ISOLATION STRUCTURE COUPLED TO A COVER OF THE SEMICONDUCTOR DEVICE 有权具有与半导体器件的封套耦合的隔离结构的半导体器件公开(公告)号：US20160043039A1
公开(公告)日：2016-02-11
申请号：US14451962
申请日：2014-08-05
IPC分类号： H01L23/552 , H01L21/52 , H01L23/053
CPC分类号： H01L23/552 , H01L21/52 , H01L23/053 , H01L23/057 , H01L23/5386 , H01L23/585 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/50 , H01L2223/6611 , H01L2223/6644 , H01L2224/04042 , H01L2224/48091 , H01L2224/48195 , H01L2224/48227 , H01L2224/48247 , H01L2224/49111 , H01L2224/49112 , H01L2224/49113 , H01L2224/49175 , H01L2924/00014 , H01L2924/13091 , H01L2924/1421 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/213 , H03F2200/222 , H03F2200/451 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A system and method for packaging a semiconductor device that includes a structure to reduce electromagnetic coupling are presented. The semiconductor device is formed on a substrate. A cover is affixed to the substrate so as to extend over the semiconductor device. An isolation structure of electrically conductive material is coupled to the cover in between components of the semiconductor device, with the isolation structure being configured to reduce inductive coupling between those components during an operation of the semiconductor device. In one version, the isolation structure includes a first leg extending from a ground connection along a side wall of the cover to a cross member contiguous with a primary cover wall that extends over the semiconductor device between the components to be isolated electromagnetically.
摘要翻译： 提出了一种用于封装包括减少电磁耦合的结构的半导体器件的系统和方法。 半导体器件形成在衬底上。 将覆盖物固定到基板上以便在半导体器件上延伸。 导电材料的隔离结构在半导体器件的部件之间耦合到覆盖层，隔离结构被配置为在半导体器件的操作期间减少这些部件之间的电感耦合。 在一个版本中，隔离结构包括从沿着盖的侧壁的接地连接部延伸到与主覆盖壁邻接的横向构件的第一腿部，所述横向构件在要被隔离的部件之间在半导体器件上延伸以被电磁隔离。
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