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1.发明授权Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof 有权用于RF放大器的集成无源器件组件及其制造方法公开(公告)号：US09438184B2
公开(公告)日：2016-09-06
申请号：US14317572
申请日：2014-06-27
IPC分类号： H01L21/8242 , H01L29/86 , H01L29/06 , H03F3/21 , H01L25/00 , H01L25/16 , H01L23/00 , H03F1/56 , H01L23/047 , H03F3/195 , H03F3/193
CPC分类号： H03F3/21 , H01G4/385 , H01G4/40 , H01L23/047 , H01L23/481 , H01L23/488 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L25/50 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48111 , H01L2224/49052 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1304 , H01L2924/13091 , H01L2924/19104 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
摘要翻译： 集成无源器件（IPD）组件的实施例包括形成在半导体衬底上的第一电容器，其中第一电容器包括第一电容器电极，第二电容器电极和将第一电容器电极与第二电容器电绝缘的电介质材料 电极。 IPD组件还包括暴露在IPD组件的顶表面处并电耦合到第二电容器电极的第一接触焊盘和暴露在IPD的顶表面处的第二接触焊盘。 第二电容器耦合到IPD的顶表面，并且包括电耦合到第一接触焊盘的第一端子和电耦合到第二接触焊盘的第二端子。 IPD组件可以包括在封装的RF器件中，形成输出阻抗匹配电路的一部分和封装频率终止电路。
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2.发明申请INTEGRATED PASSIVE DEVICE ASSEMBLIES FOR RF AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF 有权用于射频放大器的集成无源器件组件及其制造方法公开(公告)号：US20150381121A1
公开(公告)日：2015-12-31
申请号：US14317572
申请日：2014-06-27
IPC分类号： H03F3/19 , H01L25/16 , H01L49/02 , H03F3/21 , H01L23/31 , H01L23/04 , H01L23/00 , H03F1/56 , H01L25/00 , H01L21/56
CPC分类号： H03F3/21 , H01G4/385 , H01G4/40 , H01L23/047 , H01L23/481 , H01L23/488 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L25/50 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48111 , H01L2224/49052 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1304 , H01L2924/13091 , H01L2924/19104 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
摘要翻译： 集成无源器件（IPD）组件的实施例包括形成在半导体衬底上的第一电容器，其中第一电容器包括第一电容器电极，第二电容器电极和将第一电容器电极与第二电容器电绝缘的电介质材料 电极。 IPD组件还包括暴露在IPD组件的顶表面处并电耦合到第二电容器电极的第一接触焊盘和暴露在IPD的顶表面处的第二接触焊盘。 第二电容器耦合到IPD的顶表面，并且包括电耦合到第一接触焊盘的第一端子和电耦合到第二接触焊盘的第二端子。 IPD组件可以包括在封装的RF器件中，形成输出阻抗匹配电路的一部分和封装频率终止电路。
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公开(公告)号：US20150262961A1
公开(公告)日：2015-09-17
申请号：US14204340
申请日：2014-03-11
IPC分类号： H01L23/00 , H01L29/861 , H01L23/64 , H01L27/07 , H01L21/822 , H01L49/02 , H01L27/06
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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公开(公告)号：US09419566B2
公开(公告)日：2016-08-16
申请号：US14009099
申请日：2011-04-20
CPC分类号： H03F1/565 , H01L2224/49175 , H03F1/0288 , H03F3/195 , H03F3/21 , H03F3/68 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： Apparatus are provided for amplifier systems and related integrated circuits are provided. An exemplary integrated circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the integrated circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the integrated circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.
摘要翻译： 提供放大器系统的装置，并提供相关的集成电路。 示例性集成电路包括主放大器布置，耦合在主放大器布置的输出和集成电路的第一输出之间的第一阻抗匹配电路，峰值放大器布置和耦合在峰值放大器的输出端之间的第二阻抗匹配电路 布置和集成电路的第二输出。 在一个示例性实施例中，第一阻抗匹配电路和第二阻抗匹配电路具有不同的电路拓扑和不同的物理拓扑。
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公开(公告)号：US07378920B2
公开(公告)日：2008-05-27
申请号：US11354472
申请日：2006-02-14
申请人： Jeffrey K. Jones , Basim H. Noori
发明人： Jeffrey K. Jones , Basim H. Noori
IPC分类号： H03H7/38
CPC分类号： H03H7/38 , H01L2223/6655 , H03F1/565 , H03F3/191 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451
摘要： An output match circuit is coupled between the terminal of a high-frequency device and a ground terminal. The output match circuit includes an LC shunt and an LC notch serially coupled to the LC shunt, wherein the LC notch includes a resonant capacitive element in series with a resonant inductive element. The LC notch may simply include a resonant inductive element coupled directly to the ground terminal. The series inductive element may have a terminal coupled between the resonant capacitive element and the resonant inductive element.
摘要翻译： 输出匹配电路耦合在高频器件的端子和接地端子之间。 输出匹配电路包括串联耦合到LC分流器的LC分路和LC陷波，其中LC陷波包括与谐振电感元件串联的谐振电容元件。 LC陷波可以简单地包括直接耦合到接地端子的谐振电感元件。 串联电感元件可以具有耦合在谐振电容元件和谐振电感元件之间的端子。
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公开(公告)号：US09236363B2
公开(公告)日：2016-01-12
申请号：US14204340
申请日：2014-03-11
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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7.发明申请公开(公告)号：US20150349499A1
公开(公告)日：2015-12-03
申请号：US14293741
申请日：2014-06-02
申请人： David P. Lester , Viswanathan Lakshminarayan , Mario M. Bokatius , Basim H. Noori , J. Piel Pierre-Marie
发明人： David P. Lester , Viswanathan Lakshminarayan , Mario M. Bokatius , Basim H. Noori , J. Piel Pierre-Marie
CPC分类号： H01T15/00 , F02P3/01 , F02P13/00 , F02P23/04 , H01T13/44 , H05H1/46 , H05H1/52 , H05H2001/4682
摘要： The present disclosure presents a device and method for connecting an RF generator to a coaxial conductor. The device includes a substrate, a radio frequency generator on the substrate, and a coaxial conductor coupled to a first surface of the substrate. The coaxial conductor includes a conductive core and a conductive shield around the conductive core and is configured to transmit the radio frequency signal to a radiation device. The device includes a cap coupled to the substrate and extending from a second surface of the substrate opposite the first surface. The cap includes an outer wall and a center post. The outer wall is electrically connected to the conductive shield of the coaxial conductor and the center post is electrically connected to the conductive core of the coaxial conductor. An output pad of the radio frequency generator is electrically connected to the conductive core.
摘要翻译： 本公开提出了一种用于将RF发生器连接到同轴导体的装置和方法。 该装置包括衬底，在衬底上的射频发生器和耦合到衬底的第一表面的同轴导体。 同轴导体包括导电芯和围绕导电芯的导电屏蔽，并被配置为将射频信号传输到辐射装置。 该装置包括联接到基板并从基板的与第一表面相对的第二表面延伸的盖。 盖子包括外壁和中心柱。 外壁电连接到同轴导体的导电屏蔽，并且中心柱电连接到同轴导体的导电芯。 射频发生器的输出焊盘与导电芯电连接。
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8.发明授权公开(公告)号：US09531167B2
公开(公告)日：2016-12-27
申请号：US14293741
申请日：2014-06-02
申请人： David P. Lester , Viswanathan Lakshminarayan , Mario M. Bokatius , Basim H. Noori , Pierre Marie Jean Piel
发明人： David P. Lester , Viswanathan Lakshminarayan , Mario M. Bokatius , Basim H. Noori , Pierre Marie Jean Piel
CPC分类号： H01T15/00 , F02P3/01 , F02P13/00 , F02P23/04 , H01T13/44 , H05H1/46 , H05H1/52 , H05H2001/4682
摘要： The present disclosure presents a device and method for connecting an RF generator to a coaxial conductor. The device includes a substrate, a radio frequency generator on the substrate, and a coaxial conductor coupled to a first surface of the substrate. The coaxial conductor includes a conductive core and a conductive shield around the conductive core and is configured to transmit the radio frequency signal to a radiation device. The device includes a cap coupled to the substrate and extending from a second surface of the substrate opposite the first surface. The cap includes an outer wall and a center post. The outer wall is electrically connected to the conductive shield of the coaxial conductor and the center post is electrically connected to the conductive core of the coaxial conductor. An output pad of the radio frequency generator is electrically connected to the conductive core.
摘要翻译： 本公开提出了一种用于将RF发生器连接到同轴导体的装置和方法。 该装置包括衬底，在衬底上的射频发生器和耦合到衬底的第一表面的同轴导体。 同轴导体包括导电芯和围绕导电芯的导电屏蔽，并被配置为将射频信号传输到辐射装置。 该装置包括联接到基板并从基板的与第一表面相对的第二表面延伸的盖。 盖子包括外壁和中心柱。 外壁电连接到同轴导体的导电屏蔽，并且中心柱电连接到同轴导体的导电芯。 射频发生器的输出焊盘与导电芯电连接。
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公开(公告)号：US09518555B2
公开(公告)日：2016-12-13
申请号：US14560675
申请日：2014-12-04
申请人： Mario M. Bokatius , Lakshminarayan Viswanathan , David P. Lester , Basim H. Noori , Pierre Marie J. Piel
发明人： Mario M. Bokatius , Lakshminarayan Viswanathan , David P. Lester , Basim H. Noori , Pierre Marie J. Piel
摘要： A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.
摘要翻译： 提出了一种辐射装置及相关方法。 辐射装置包括主体。 主体包括构造成与发动机中的螺纹开口和敞开的内部容积接合的螺纹部分。 辐射装置包括耦合到主体的接地电极，设置在主体内的开放内部空间内的基板，以及基板上的射频发生器。 射频发生器被配置为接收输入信号，并且响应于输入信号，在主体和接地电极之间产生等离子体能量。
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公开(公告)号：US20160160833A1
公开(公告)日：2016-06-09
申请号：US14560675
申请日：2014-12-04
申请人： Mario M. Bokatius , Lakshminarayan Viswanathan , David P. Lester , Basim H. Noori , Pierre Marie J. Piel
发明人： Mario M. Bokatius , Lakshminarayan Viswanathan , David P. Lester , Basim H. Noori , Pierre Marie J. Piel
摘要： A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.
摘要翻译： 提出了一种辐射装置及相关方法。 辐射装置包括主体。 主体包括构造成与发动机中的螺纹开口和敞开的内部容积接合的螺纹部分。 辐射装置包括耦合到主体的接地电极，设置在主体内的开放内部空间内的基板，以及基板上的射频发生器。 射频发生器被配置为接收输入信号，并且响应于输入信号，在主体和接地电极之间产生等离子体能量。
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