公开(公告)号：US20110220026A1

公开(公告)日：2011-09-15

申请号：US13129924

申请日：2009-11-19

申请人： Eiji Ino ,  Akira Watanabe ,  Shunichi Ishihara ,  Hajime Ashida ,  Hiroshi Shoji ,  Keiichi Yoshimura

发明人： Eiji Ino ,  Akira Watanabe ,  Shunichi Ishihara ,  Hajime Ashida ,  Hiroshi Shoji ,  Keiichi Yoshimura

IPC分类号： C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01J37/32568 ,  C23C16/45578 ,  C23C16/509 ,  H01J37/3244

摘要： A plasma processing device according to the present invention includes a plasma processing chamber consisting of a vacuum container, a pair of substrate holders standing opposite each other in the plasma processing chamber, a plurality of first reaction gas tubes provided between the two substrate holders, and a plurality of second reaction gas tubes provided between the plurality of first reaction gas tubes and each of the two substrate holders. The first reaction gas tubes, which are made of an electrically conductive material, are electrically connected to a first radio-frequency power source or second radio-frequency power source. The first reaction gas tubes double as a radio-frequency antenna, while the second reaction gas tubes double as an electrode.

摘要翻译： 根据本发明的等离子体处理装置包括等离子体处理室，其由真空容器，在等离子体处理室中彼此相对定位的一对基板保持器组成，多个第一反应气体管设置在两个基板保持器之间，以及 设置在所述多个第一反应气体管与所述两个基板保持件中的每一个之间的多个第二反应气体管。 由导电材料制成的第一反应气体管与第一射频电源或第二射频电源电连接。 第一反应气管作为射频天线加倍，而第二反应气管作为电极加倍。

公开(公告)号：US06951585B2

公开(公告)日：2005-10-04

申请号：US10397310

申请日：2003-03-27

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

IPC分类号： C30B19/02 ,  H01L31/18 ,  C30B19/10

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.

摘要翻译： 一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤 将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。 所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。

公开(公告)号：US5645947A

公开(公告)日：1997-07-08

申请号：US477269

申请日：1995-06-07

申请人： Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

IPC分类号： C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L31/20 ,  B32B9/00 ,  G03G5/04

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).

摘要翻译： 通过在分解空间（B）中形成的高级卤化硅或高级卤代硅烷的气体前体与单独导入的气态活化物质（A）中的化学反应在沉积空间（A）中的基底上形成沉积膜 氢，硅烷或在分解空间（C）中形成的卤代硅烷。

公开(公告)号：US5476694A

公开(公告)日：1995-12-19

申请号：US371610

申请日：1995-01-12

申请人： Shunichi Ishihara ,  Masaaki Hirooka ,  Shigeru Ohno

发明人： Shunichi Ishihara ,  Masaaki Hirooka ,  Shigeru Ohno

IPC分类号： C23C16/30 ,  C23C16/452 ,  H01L21/205 ,  B05D3/08

CPC分类号： C23C16/30 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

摘要翻译： 一种用于形成沉积膜的方法，包括通过施加能量以形成活性种分解在活化室中含有锗和卤素的第一化合物; 分别引入用于在基板上形成沉积膜的成膜室，含有硅和氢的第二化合物和能够与含有硅和氢的第二化合物发生化学相互作用的活性物质; 以及向所述第二化合物和所述活性物质的混合物施加选自光学，热能和放电能量的至少一种激发能，以激发所述混合物中的所述第二化合物，由此有助于在所述衬底上形成沉积膜。

公开(公告)号：US4885258A

公开(公告)日：1989-12-05

申请号：US267701

申请日：1988-11-01

申请人： Shunichi Ishihara ,  Hirokazu Ootoshi ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Hirokazu Ootoshi ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L27/12 ,  H01L21/205 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/909

摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.

摘要翻译： 提供了一种改进的薄膜晶体管，其主要半导体层包括由非晶材料构成的层，其通过以下步骤制备：（a）将含有能够成为所述层的成分的原子的气态物质引入到具有 通过用于气态物质的输送导管的薄膜晶体管的基板和（ii）具有通过气态卤素系列氧化剂的输送管道将气态物质氧化成成膜室的性质的气态卤素系列物质（ b）在不存在等离子体的情况下使成膜室中的气态物质和气态卤素系列试剂化学反应，生成多种含有前体前体的前体，和（c）使用至少一种 这些前体作为供应商。

公开(公告)号：US4853251A

公开(公告)日：1989-08-01

申请号：US831411

申请日：1986-02-20

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/043 ,  G03G5/082 ,  G03G5/10 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： G03G5/08214 ,  C23C16/30 ,  C23C16/452 ,  G03G5/0433 ,  G03G5/08278 ,  G03G5/08285 ,  G03G5/102 ,  G03G5/104 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/931

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4851302A

公开(公告)日：1989-07-25

申请号：US221761

申请日：1988-07-20

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

IPC分类号： H01L31/04 ,  G06F9/48 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02963 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y10T428/12528 ,  Y10T428/12792

摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。

公开(公告)号：US4806386A

公开(公告)日：1989-02-21

申请号：US33463

申请日：1987-04-02

申请人： Shunichi Ishihara

发明人： Shunichi Ishihara

IPC分类号： C01B33/00 ,  C23C16/50 ,  C23C16/505 ,  C23C16/54 ,  G03G5/08 ,  G03G5/082 ,  B05D3/06

CPC分类号： C23C16/54 ,  G03G5/08214

摘要： An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing or polymerizing said gas by discharging and a means for decomposing or polymerizing said gas by heat.

摘要翻译： 用于形成沉积膜的装置包括可以减压的室，用于通过将起始气体引入所述室并分解或聚合所述气体在基板上形成沉积膜，该装置设置有两个 用于通过排放分解或聚合所述气体的装置和用于通过加热分解或聚合所述气体的装置。

公开(公告)号：US4726963A

公开(公告)日：1988-02-23

申请号：US61003

申请日：1987-06-09

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/22 ,  C23C16/48 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/0245 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 其与所述活性物质（A）分开反应，然后用光能照射它们，从而允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4439504A

公开(公告)日：1984-03-27

申请号：US302235

申请日：1981-09-14

申请人： Shunichi Ishihara ,  Nobuo Kitajima ,  Yuji Nishigaki ,  Nobuko Kitahara

发明人： Shunichi Ishihara ,  Nobuo Kitajima ,  Yuji Nishigaki ,  Nobuko Kitahara

IPC分类号： G03G15/01 ,  G03G5/12 ,  G03G5/14 ,  G03G13/01

CPC分类号： G03G13/01 ,  G03G5/14

摘要： A color electrophotographic process comprises applying voltage between a non-transparent electrode and a color filter electrode of an electrophotographic photosensitive member comprising isolated conductive members forming picture elements, a photoconductive layer, non-transparent electrodes and color filter electrodes, conducting imagewise exposure from the side where color filter electrodes are arranged, resulting in formation of a difference in distribution voltage between the area wherein light passes through the color filter electrode and the area wherein light does not pass through the color filter electrode with regard to the voltage distribution between the non-transparent electrode and the isolated conductive member and between the color filter electrode and the isolated conductive member, thereby forming a voltage image depending upon the change of the voltage of the isolated conductive member caused corresponding to a difference in distribution voltage, and developing said voltage image with a color toner corresponding to a color light passing through the color filter electrode. Further there is disclosed an electrophotographic photosensitive member for a color electrophotographic process as mentioned above.

摘要翻译： 彩色电子照相方法包括在电子照相感光构件的非透明电极和滤色器电极之间施加电压，所述电子照相感光构件包括形成像素的隔离导电构件，光电导层，非透明电极和滤色器电极，从侧面进行成像曝光 其中布置滤色器电极，导致光通过滤色器电极的区域与光不通过滤色器电极的区域之间的分布电压差异， 透明电极和隔离导电部件之间，并且在滤色器电极和隔离导电部件之间，从而根据分配电压差引起的隔离导电部件的电压变化形成电压图像，并且显影所述v 具有与通过滤色器电极的彩色光相对应的彩色调色剂的电压图像。 此外，公开了如上所述的用于彩色电子照相方法的电子照相感光构件。