公开(公告)号：US07550395B2

公开(公告)日：2009-06-23

申请号：US11263314

申请日：2005-10-31

申请人： Evelyn L. Hu ,  Shuji Nakamura ,  Elaine D. Haberer ,  Rajat Sharma

发明人： Evelyn L. Hu ,  Shuji Nakamura ,  Elaine D. Haberer ,  Rajat Sharma

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30635 ,  B82Y20/00 ,  H01L33/10 ,  H01S5/1075 ,  H01S5/18316 ,  H01S5/2081 ,  H01S5/34333 ,  H01S2304/12

摘要： A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.

摘要翻译： 通过适当地布置妨碍半导体结构内的电子流的电阻层或层，局部地控制半导体结构或器件的电位，从而局部控制横向和/或垂直光电化学（PEC）蚀刻速率的方法，以及 /或通过在PEC蚀刻期间将阴极定位成与半导体结构的特定层接触。

公开(公告)号：US20080182420A1

公开(公告)日：2008-07-31

申请号：US11940876

申请日：2007-11-15

申请人： Evelyn L. Hu ,  Shuji Nakamura ,  Yong Seok Choi ,  Rajat Sharma ,  Chiou-Fu Wang

发明人： Evelyn L. Hu ,  Shuji Nakamura ,  Yong Seok Choi ,  Rajat Sharma ,  Chiou-Fu Wang

IPC分类号： H01L21/302

CPC分类号： H01L33/10 ,  H01L33/0075 ,  H01L33/0095

摘要： A method for ensuring the structural integrity of III-nitride opto-electronic or opto-mechanical air-gap nano-structured devices, comprising (a) performing ion beam implantation in a region of the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device, wherein the milling significantly locally modifies a material property in the region to provide the structural integrity; and (b) performing a band-gap selective photo-electro-chemical (PEC) etch on the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device. The method can be used to fabricate distributed Bragg reflectors or photonic crystals, for example. The method also comprises the suitable design of distributed Bragg reflector (DBR) structures for the PEC etching and the ion-beam treatment, the suitable design of photonic crystal distributed Bragg reflector (PCDBR) structures for PEC etching and the ion-beam treatment, the suitable placement of protection layers to prevent the ion-beam damage to optical activity and PEC etch selectivity, and a suitable annealing treatment for curing the material quality after the ion-beam treatment.

摘要翻译： 一种用于确保III族氮化物光电子或光电机械气隙纳米结构器件的结构完整性的方法，包括（a）在III族氮化物光电子和光机电空气的区域中进行离子束注入 其中所述研磨显着地局部地修饰该区域中的材料性质以提供结构完整性; 和（b）在III族氮化物光电子和光机电气隙纳米结构器件上进行带隙选择性光电化学（PEC）蚀刻。 该方法可用于制造分布式布拉格反射器或光子晶体。 该方法还包括用于PEC蚀刻和离子束处理的分布式布拉格反射器（DBR）结构的合适设计，用于PEC蚀刻和离子束处理的光子晶体分布布拉格反射器（PCDBR）结构的合适设计， 保护层的适当放置以防止离子束损伤光学活性和PEC蚀刻选择性，以及适当的退火处理以在离子束处理后固化材料质量。

公开(公告)号：US08766296B2

公开(公告)日：2014-07-01

申请号：US12576122

申请日：2009-10-08

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US07704763B2

公开(公告)日：2010-04-27

申请号：US10581940

申请日：2003-12-09

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US20140252396A1

公开(公告)日：2014-09-11

申请号：US14281535

申请日：2014-05-19

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/22 ,  H01L33/60 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US20100025717A1

公开(公告)日：2010-02-04

申请号：US12576122

申请日：2009-10-08

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US10446714B2

公开(公告)日：2019-10-15

申请号：US14281535

申请日：2014-05-19

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/22 ,  H01L33/60 ,  H01L33/00 ,  H01L33/32 ,  H01L33/54 ,  H01L33/50 ,  H01L33/06

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

公开(公告)号：US08643036B2

公开(公告)日：2014-02-04

申请号：US13550433

申请日：2012-07-16

申请人： Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

发明人： Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/1053 ,  H01S5/34333

摘要： A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.

摘要翻译： 一种半导体发光二极管及其制造方法，其中含铟（In）的发光层以及随后的器件层沉积在织构表面上。 所得装置是无磷白色光源。

公开(公告)号：US08227820B2

公开(公告)日：2012-07-24

申请号：US11054271

申请日：2005-02-09

申请人： Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

发明人： Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/1053 ,  H01S5/34333

摘要： A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.

摘要翻译： 一种半导体发光二极管及其制造方法，其中含铟（In）的发光层以及随后的器件层沉积在织构表面上。 所得装置是无磷白色光源。

公开(公告)号：US20070093073A1

公开(公告)日：2007-04-26

申请号：US11444946

申请日：2006-06-01

申请人： Robert Farrell ,  Troy Baker ,  Arpan Chakraborty ,  Benjamin Haskell ,  P. Pattison ,  Rajat Sharma ,  Umesh Mishra ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Robert Farrell ,  Troy Baker ,  Arpan Chakraborty ,  Benjamin Haskell ,  P. Pattison ,  Rajat Sharma ,  Umesh Mishra ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。