公开(公告)号：US08263491B2

公开(公告)日：2012-09-11

申请号：US11875711

申请日：2007-10-19

申请人： Florian Binder ,  Stephan Dertinger ,  Barbara Hasler ,  Alfred Martin ,  Grit Sommer ,  Holger Torwesten

发明人： Florian Binder ,  Stephan Dertinger ,  Barbara Hasler ,  Alfred Martin ,  Grit Sommer ,  Holger Torwesten

IPC分类号： H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L24/12 ,  H01L24/16 ,  H01L24/28 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate has at least one feedthrough with at least one channel from a first main surface of the substrate to a second main surface of the substrate. The at least one channel is closed off with a first material. The at least one closed-off channel is filled with an electrically conductive second material.

摘要翻译： 衬底具有至少一个馈通，其具有从衬底的第一主表面到衬底的第二主表面的至少一个通道。 至少一个通道用第一材料封闭。 至少一个闭合通道填充有导电的第二材料。

公开(公告)号：US08048801B2

公开(公告)日：2011-11-01

申请号：US11751396

申请日：2007-05-21

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

摘要翻译： 具有第一和第二主表面的基底包括从第一主表面延伸到第二主表面的至少一个通道。 所述至少一个通道包括在第一位置处的第一横截面区域和在第二位置处的第二横截面区域。 导电的第一材料设置在至少一个通道中。

公开(公告)号：US08581405B2

公开(公告)日：2013-11-12

申请号：US13151408

申请日：2011-06-02

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L27/0629 ,  B81B7/0006 ,  H01L21/76843 ,  H01L21/7687 ,  H01L21/76898 ,  H01L23/373 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L25/16 ,  H01L27/10855 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

摘要翻译： 公开了具有阻挡层的半导体衬底的集成电路。 该装置包括半导体衬底和金属元件。 碳基阻挡层设置在半导体衬底和金属元件之间。

公开(公告)号：US20110233630A1

公开(公告)日：2011-09-29

申请号：US13151408

申请日：2011-06-02

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L27/06

CPC分类号： H01L27/0629 ,  B81B7/0006 ,  H01L21/76843 ,  H01L21/7687 ,  H01L21/76898 ,  H01L23/373 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L25/16 ,  H01L27/10855 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

摘要翻译： 公开了具有阻挡层的半导体衬底的集成电路。 该装置包括半导体衬底和金属元件。 碳基阻挡层设置在半导体衬底和金属元件之间。

公开(公告)号：US07977798B2

公开(公告)日：2011-07-12

申请号：US11828865

申请日：2007-07-26

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L27/0629 ,  B81B7/0006 ,  H01L21/76843 ,  H01L21/7687 ,  H01L21/76898 ,  H01L23/373 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L25/16 ,  H01L27/10855 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

摘要翻译： 公开了具有阻挡层的半导体衬底的集成电路。 该装置包括半导体衬底和金属元件。 碳基阻挡层设置在半导体衬底和金属元件之间。

公开(公告)号：US20080268638A1

公开(公告)日：2008-10-30

申请号：US11751396

申请日：2007-05-21

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Hasler ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

摘要翻译： 具有第一和第二主表面的基底包括从第一主表面延伸到第二主表面的至少一个通道。 所述至少一个通道包括在第一位置处的第一横截面区域和在第二位置处的第二横截面区域。 导电的第一材料设置在至少一个通道中。

公开(公告)号：US20090026616A1

公开(公告)日：2009-01-29

申请号：US11828865

申请日：2007-07-26

申请人： Stephan Dertinger ,  Alfred Martin ,  Barbara Halser ,  Grit Sommer ,  Florian Binder

发明人： Stephan Dertinger ,  Alfred Martin ,  Barbara Halser ,  Grit Sommer ,  Florian Binder

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L27/0629 ,  B81B7/0006 ,  H01L21/76843 ,  H01L21/7687 ,  H01L21/76898 ,  H01L23/373 ,  H01L23/481 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L25/16 ,  H01L27/10855 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

摘要翻译： 公开了具有阻挡层的半导体衬底的集成电路。 该装置包括半导体衬底和金属元件。 碳基阻挡层设置在半导体衬底和金属元件之间。

公开(公告)号：US20050233438A1

公开(公告)日：2005-10-20

申请号：US10967090

申请日：2004-10-15

申请人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Volker Lehmann ,  Alfred Martin ,  Reinhard Marz

发明人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Volker Lehmann ,  Alfred Martin ,  Reinhard Marz

IPC分类号： B01J19/00 ,  B01L3/00 ,  C30B33/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N33/543 ,  C12M3/00

CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00286 ,  B01J2219/00497 ,  B01J2219/00511 ,  B01J2219/00576 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00621 ,  B01J2219/00626 ,  B01J2219/00659 ,  B01J2219/00677 ,  B01J2219/00707 ,  B01J2219/00711 ,  B01J2219/00722 ,  B01J2219/00725 ,  B01J2219/00729 ,  B01L3/50857 ,  C30B29/06 ,  C30B33/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N33/54373

摘要： Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 μm distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

摘要翻译： 具有由硅制成且具有表面的平坦的大孔支撑材料的装置，多个孔具有分布在支撑材料的至少一个表面区域上的500nm至100μm范围内的直径，并且从一个表面延伸到 支撑材料的相对表面，具有一个或多个具有SiO 2孔壁的孔的至少一个区域和具有围绕所述至少一个区域并且基本上平行于孔的纵向轴线布置并且朝向 表面，其中硅芯在跨越形成框架的壁的外侧的横截面上合并成二氧化硅。

公开(公告)号：US20050112652A1

公开(公告)日：2005-05-26

申请号：US10968847

申请日：2004-10-19

申请人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Hans-Christian Hanke ,  Alfred Martin ,  Reinhard Marz

发明人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Hans-Christian Hanke ,  Alfred Martin ,  Reinhard Marz

IPC分类号： B01L3/00 ,  C12Q1/68

CPC分类号： B01L3/50857 ,  B01L2300/0654 ,  B01L2300/0819 ,  B01L2300/0829

摘要： Device having a two-dimensionally formed support material which has, spread across at least one surface area, a plurality of pores which stretch throughout from one surface of the support material to the opposite surface, wherein the pores are bound in each case by a pore boundary area of pore walls formed in the support material along particular longitudinal axes of the pores, and at least part of the pore walls have at least in some sections a layered structure containing a first layer forming the pore boundary area and a second layer adjacent to the first layer and spaced apart from the pore boundary area, and wherein the refractive index nwaveguide of the first layer is greater than the refractive index n2 of the second layer.

摘要翻译： 具有二维形成的支撑材料的装置，其具有穿过至少一个表面区域延伸的多个孔，其从支撑材料的一个表面延伸到相对的表面，其中孔在每种情况下都被孔隙结合 沿着孔的特定纵向轴线形成在支撑材料中的孔壁的边界区域，并且孔壁的至少一部分至少在一些部分中具有包含形成孔边界区域的第一层的层状结构和与孔边界相邻的第二层 第一层并且与孔边界区间隔开，并且其中第一层的折射率nλ波导大于第二层的折射率n 2 2 N。

公开(公告)号：US07410794B2

公开(公告)日：2008-08-12

申请号：US10967090

申请日：2004-10-15

申请人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Volker Lehmann ,  Alfred Martin ,  Reinhard Marz

发明人： Stephan Dertinger ,  Michaela Fritz ,  Karin Fuchs ,  Thomas Haneder ,  Volker Lehmann ,  Alfred Martin ,  Reinhard Marz

IPC分类号： G02B6/00 ,  G02B6/10 ,  G01N33/48 ,  G01N33/53 ,  G01N21/00 ,  G01N21/76 ,  G01N15/06 ,  C12Q1/68 ,  C12M1/34 ,  B01L3/00

CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00286 ,  B01J2219/00497 ,  B01J2219/00511 ,  B01J2219/00576 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00621 ,  B01J2219/00626 ,  B01J2219/00659 ,  B01J2219/00677 ,  B01J2219/00707 ,  B01J2219/00711 ,  B01J2219/00722 ,  B01J2219/00725 ,  B01J2219/00729 ,  B01L3/50857 ,  C30B29/06 ,  C30B33/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N33/54373

摘要： Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 μm distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

摘要翻译： 具有由硅制成且具有表面的平坦的大孔支撑材料的装置，多个孔具有分布在支撑材料的至少一个表面区域上的500nm至100μm范围内的直径，并且从一个表面延伸到 支撑材料的相对表面，具有一个或多个具有SiO 2孔壁的孔的至少一个区域和具有围绕所述至少一个区域并且基本上平行于孔的纵向轴线布置并且朝向 表面，其中硅芯在跨越形成框架的壁的外侧的横截面上合并成二氧化硅。