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公开(公告)号:US09017481B1
公开(公告)日:2015-04-28
申请号:US13284642
申请日:2011-10-28
申请人: Fred Pettinger , Carl White , Dave Marquardt , Sokol Ibrani , Eric Shero , Todd Dunn , Kyle Fondurulia , Mike Halpin
发明人: Fred Pettinger , Carl White , Dave Marquardt , Sokol Ibrani , Eric Shero , Todd Dunn , Kyle Fondurulia , Mike Halpin
IPC分类号: C23C16/455 , C23C16/44 , H01J37/32
CPC分类号: H01L21/02104 , C23C16/4409 , C23C16/4411 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32532
摘要: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
摘要翻译: 提供了与管理半导体工艺模块的工艺进料条件有关的实施例。 在一个示例中,提供了一种用于半导体处理模块的气体通道板。 示例性气体通道板包括热交换表面,其包括通过中间间隔彼此分离的多个热交换结构。 示例性气体通道板还包括热交换流体引导板支撑表面,用于在多个热交换结构之上支撑热交换流体导向板,使得多个热交换结构的至少一部分与热交换流体间隔开 导演板。
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公开(公告)号:US09574268B1
公开(公告)日:2017-02-21
申请号:US13284738
申请日:2011-10-28
申请人: Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
发明人: Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号: C23C16/455 , C23C16/453
CPC分类号: C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45576 , C23C16/45589 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
摘要翻译: 气相沉积装置包括反应器,该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体,在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道,以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道,以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置,并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道(因此,供应通道)可以与常见的反应物源连接。 还描述了相关的沉积方法。
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公开(公告)号:US20060266289A1
公开(公告)日:2006-11-30
申请号:US11333127
申请日:2006-01-17
申请人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: C23C16/00
CPC分类号: H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译: 原子沉积(ALD)薄膜沉积设备包括沉积室,其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁,其构造成在进入气体入口之前沿水平方向扩展气体。
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公开(公告)号:US20120266821A1
公开(公告)日:2012-10-25
申请号:US13529223
申请日:2012-06-21
申请人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: C23C16/458
CPC分类号: H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译: 原子沉积(ALD)薄膜沉积设备包括沉积室,其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统被配置为将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁,其构造成在进入气体入口之前沿水平方向扩展气体。
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公开(公告)号:US08211230B2
公开(公告)日:2012-07-03
申请号:US11333127
申请日:2006-01-17
申请人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号: H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译: 原子沉积(ALD)薄膜沉积设备包括沉积室,其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁,其构造成在进入气体入口之前沿水平方向扩展气体。
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公开(公告)号:US09359672B2
公开(公告)日:2016-06-07
申请号:US13529223
申请日:2012-06-21
申请人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: C23C16/455 , C23C16/458 , C23C16/44 , C30B35/00 , H01L21/67 , H01L21/687
CPC分类号: H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
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公开(公告)号:US09202727B2
公开(公告)日:2015-12-01
申请号:US13411271
申请日:2012-03-02
申请人: Todd Dunn , Carl White , Michael Halpin , Eric Shero , Jerry Winkler
发明人: Todd Dunn , Carl White , Michael Halpin , Eric Shero , Jerry Winkler
IPC分类号: F27D5/00 , H01L21/67 , F27B17/00 , F27D3/00 , H01L21/687
CPC分类号: H01L21/67103 , F27B17/0025 , F27D3/0084 , F27D5/0037 , H01L21/68785
摘要: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.
摘要翻译: 反应空间中的基板支撑组件包括加热器,基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部,并且其中垫片内表面与衬底支撑构件肩部径向对准。
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公开(公告)号:US20130230814A1
公开(公告)日:2013-09-05
申请号:US13411271
申请日:2012-03-02
申请人: Todd Dunn , Carl White , Michael Halpin , Eric Shero , Jerry Winkler
发明人: Todd Dunn , Carl White , Michael Halpin , Eric Shero , Jerry Winkler
CPC分类号: H01L21/67103 , F27B17/0025 , F27D3/0084 , F27D5/0037 , H01L21/68785
摘要: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.
摘要翻译: 反应空间中的基板支撑组件包括加热器,基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部,并且其中垫片内表面与衬底支撑构件肩部径向对准。
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公开(公告)号:US20080085226A1
公开(公告)日:2008-04-10
申请号:US11870374
申请日:2007-10-10
申请人: Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
发明人: Kyle Fondurulia , Eric Shero , Mohith E. Verghese , Carl L. White
CPC分类号: C23C16/4481 , C23C16/4401 , C23C16/4402
摘要: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
摘要翻译: 前体源容器包括容器主体,容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物,并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀,并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。
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公开(公告)号:US08137462B2
公开(公告)日:2012-03-20
申请号:US11870374
申请日:2007-10-10
申请人: Kyle Fondurulia , Eric Shero , Mohith E Verghese , Carl L White
发明人: Kyle Fondurulia , Eric Shero , Mohith E Verghese , Carl L White
IPC分类号: C23C16/00 , C23C16/455 , C23C16/448
CPC分类号: C23C16/4481 , C23C16/4401 , C23C16/4402
摘要: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
摘要翻译: 前体源容器包括容器主体,容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物,并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀,并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。
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