公开(公告)号：US20120126371A1

公开(公告)日：2012-05-24

申请号：US13295795

申请日：2011-11-14

申请人： Fumitaka Sato ,  Seiji Nakahata ,  Makoto Kiyama

发明人： Fumitaka Sato ,  Seiji Nakahata ,  Makoto Kiyama

IPC分类号： H01L29/32 ,  H01L29/20

CPC分类号： H01L21/02395 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664

摘要： A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 μm and arranged at a spacing of 250 to 10,000 μm; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 Ωcm≦r≦0.01 Ωcm, a thickness of 100 μm or more, and a radius of bow curvature U of 3.5 m≦U≦8 m.

摘要翻译： 一种导电氮化物半导体衬底电路的制造方法，其特征在于，在下面的基板上形成具有宽度为10〜100μm，宽度为250〜10000μm的点状或条状掩模部的掩模的工序， 通过氢化物气相外延（HVPE）在1,040℃至1150℃的生长温度下在下面的衬底上生长氮化物半导体晶体，通过提供III族源气体，V族源气体和含硅 V / III比为1〜10的气体; 并且除去下面的衬底，从而形成电阻率r为0.0015Ω·cm·cm-1;独立电极;0.01Ω·cm·cm，厚度为100μm以上的独立的导电氮化物半导体晶体衬底，以及弓形曲率U的半径 3.5 m＆nlE; U＆nlE; 8 m。

公开(公告)号：US08110484B1

公开(公告)日：2012-02-07

申请号：US12950686

申请日：2010-11-19

申请人： Fumitaka Sato ,  Seiji Nakahata ,  Makoto Kiyama

发明人： Fumitaka Sato ,  Seiji Nakahata ,  Makoto Kiyama

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02395 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664

摘要： A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 μm and arranged at a spacing of 250 to 10,000 μm; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 Ωcm≦r≦0.01 Ωcm, a thickness of 100 μm or more, and a radius of bow curvature U of 3.5 m≦U≦8 m.

摘要翻译： 一种导电氮化物半导体衬底电路的制造方法，其特征在于，在下面的基板上形成具有宽度为10〜100μm，宽度为250〜10000μm的点状或条状掩模部的掩模的工序， 通过氢化物气相外延（HVPE）在1,040℃至1150℃的生长温度下在下面的衬底上生长氮化物半导体晶体，通过提供III族源气体，V族源气体和含硅 V / III比为1〜10的气体; 并且除去下面的衬底，从而形成电阻率r为0.0015Ω·cm·cm-1;独立电极;0.01Ω·cm·cm，厚度为100μm以上的独立的导电氮化物半导体晶体衬底，以及弓形曲率U的半径 3.5 m＆nlE; U＆nlE; 8 m。

公开(公告)号：US20100207138A1

公开(公告)日：2010-08-19

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/30 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US20070164306A1

公开(公告)日：2007-07-19

申请号：US10598934

申请日：2005-05-13

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 本发明提供适合于半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始衬底分离由III族氮化物半导体晶体衬底和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US08349078B2

公开(公告)日：2013-01-08

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu Shiomi ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： C30B25/20 ,  C30B25/22 ,  C30B29/40 ,  H01L21/306

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US07732236B2

公开(公告)日：2010-06-08

申请号：US10598934

申请日：2005-05-13

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L21/0012

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 本发明提供适合于半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US08362521B2

公开(公告)日：2013-01-29

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L31/102 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US20110223749A1

公开(公告)日：2011-09-15

申请号：US12913062

申请日：2010-10-27

申请人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

发明人： Hiromu SHIOMI ,  Yu Saitoh ,  Kazuhide Sumiyoshi ,  Akihiro Hachigo ,  Makoto Kiyama ,  Seiji Nakahata

IPC分类号： H01L21/205 ,  H01L21/3063

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/7813

摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

摘要翻译： 本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入 其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解 从而将氮化物半导体外延层与氮化物半导体衬底分离。 由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

公开(公告)号：US08890239B2

公开(公告)日：2014-11-18

申请号：US13884221

申请日：2011-07-26

申请人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

发明人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66712 ,  H01L29/7788 ,  H01L29/7789

摘要： In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. An opening 28 extends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.

摘要翻译： 在包括开口中的沟道的垂直半导体器件中，提供了可以提高其高频特性的半导体器件和制造半导体器件的方法。 半导体器件包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN基接触层7.开口28从顶层延伸并到达n型GaN- 基漂移层。 半导体器件包括以覆盖开口的方式定位的再生长层27，包括电子漂移层22和电子供给层26的再生长层27，源电极S，漏电极D和位于 再生长层。 假设用作一个电极的源极和用作另一个电极的漏电极构成电容器，则半导体器件包括降低电容器的电容的电容减小结构。

公开(公告)号：US08729562B2

公开(公告)日：2014-05-20

申请号：US13498767

申请日：2010-06-24

申请人： Masaya Okada ,  Makoto Kiyama

发明人： Masaya Okada ,  Makoto Kiyama

IPC分类号： H01L29/15

CPC分类号： H01L29/7786 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body 15 having an opening 28, a regrown layer 27 including a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layer 27 includes an electron transit layer 22 and an electron supply layer 26. The GaN-based layered body includes a p-type GaN layer 6 whose end surface is covered by the regrown layer in the opening, and a p-side electrode 11 that is in ohmic contact with the p-type GaN layer is disposed.

摘要翻译： 提供了具有低导通电阻，高迁移率和良好的夹断特性的高电流半导体器件，并且即使漏极电压增加也不容易引起扭结现象，并且制造半导体器件的方法 。 本发明的半导体器件包括具有开口28的GaN基层叠体15，包括沟道的再生长层27，栅电极G，源电极S和漏电极D.再生层27包括： 电子转移层22和电子供给层26.该GaN基层叠体包括端面被开口部中的再生长层覆盖的p型GaN层6和与欧姆接触的p侧电极11 配置p型GaN层。