-
1.发明授权Blocker plate bypass to distribute gases in a chemical vapor deposition system 有权阻挡板旁路以在化学气相沉积系统中分配气体公开(公告)号：US07572337B2
公开(公告)日：2009-08-11
申请号：US11131010
申请日：2005-05-16
申请人： Juan Carlos Rocha-Alvarez , Ganesh Balasubramanian , Tom K. Cho , Deenesh Padhi , Thomas Nowak , Bok Hoen Kim , Hichem M'Saad , Daemian Raj
发明人： Juan Carlos Rocha-Alvarez , Ganesh Balasubramanian , Tom K. Cho , Deenesh Padhi , Thomas Nowak , Bok Hoen Kim , Hichem M'Saad , Daemian Raj
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45574 , C23C16/4405 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。
-
2.发明授权Methods of uniformity control for low flow process and chamber to chamber matching 有权低流程和室到室匹配的均匀性控制方法公开(公告)号：US07829145B2
公开(公告)日：2010-11-09
申请号：US12256405
申请日：2008-10-22
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , C23C16/45565 , C23C16/45574
摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the method for processing a substrate includes delivering a processing gas into a chemical vapor deposition chamber through a first gas pathway that includes flow through a first plurality of apertures in a blocker plate, the blocker plate creating a pressure drop of at least approximately 0.8 torr thereacross, reacting the processing gas to deposit a material on a substrate surface, removing the substrate from the chamber, delivering a cleaning gas into the chamber through a second gas pathway around the blocker plate bypassing the blocker plate and through a second plurality of apertures formed in the blocker plate, and reacting the cleaning gases with deposits within the chamber to etch the deposits from the chamber.
摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，用于处理衬底的方法包括通过第一气体通路将处理气体输送到化学气相沉积室，所述第一气体通路包括通过阻挡板中的第一多个孔的流动，所述阻挡板产生至少一个压降 使处理气体反应在衬底表面上沉积材料，从腔室中移除衬底，通过围绕阻挡板的第二气体通道将清洁气体输送到室中，并绕过第二个多个 形成在阻挡板中的孔，并使清洁气体与腔室内的沉积物反应，以蚀刻来自腔室的沉积物。
-
公开(公告)号：US07622005B2
公开(公告)日：2009-11-24
申请号：US11130554
申请日：2005-05-16
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4405 , C23C16/45565 , C23C16/45574
摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道以足够的压降将阻塞板中的多个孔中的第一气体输送，以在通过气体分布板之前更均匀地分布气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。
-
4.发明申请公开(公告)号：US20090047446A1
公开(公告)日：2009-02-19
申请号：US12256405
申请日：2008-10-22
IPC分类号： C23C16/455 , H05H1/24
CPC分类号： C23C16/4405 , C23C16/45565 , C23C16/45574
摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道以足够的压降将阻塞板中的多个孔中的第一气体输送，以在通过气体分布板之前更均匀地分布气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。
-
5.发明申请Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber 审中-公开在半导体晶片处理室清洁过程中减少等离子体损伤的方法公开(公告)号：US20060054183A1
公开(公告)日：2006-03-16
申请号：US11096986
申请日：2005-04-01
申请人： Thomas Nowak , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Brian Hopper , Yuri Trachuk , Ganesh Balasubramanian , Daemian Raj
发明人： Thomas Nowak , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Brian Hopper , Yuri Trachuk , Ganesh Balasubramanian , Daemian Raj
IPC分类号： B08B6/00
CPC分类号： H01J37/32357 , B08B7/0035 , C23C16/4405 , H01J2237/335
摘要： A method and apparatus for cleaning a semiconductor manufacturing chamber comprising introducing a heteroatomic fluorine containing gas to a remote plasma source, disassociating the heteroatomic fluorine containing gas, forming diatomic fluorine, transporting gas from the remote plasma source into a processing region of the chamber, and ionizing the diatomic fluorine with an in situ plasma.
摘要翻译： 一种用于清洁半导体制造室的方法和设备，包括将杂原子含氟气体引入远程等离子体源，使含杂原子的氟化物气体分离，形成双原子氟，将气体从远程等离子体源输送到室的处理区域;以及 用原位血浆电离双原子氟。
-
6.发明授权公开(公告)号：US07189658B2
公开(公告)日：2007-03-13
申请号：US11123501
申请日：2005-05-04
申请人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang David Cui , Daemian Raj , Juan Carlos Rocha-Alvarez , Francimar Schmitt , Bok Hoen Kim
发明人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang David Cui , Daemian Raj , Juan Carlos Rocha-Alvarez , Francimar Schmitt , Bok Hoen Kim
IPC分类号： H01L21/31
CPC分类号： C23C16/029 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/76801 , H01L21/76829 , Y10S438/931
摘要： A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
摘要翻译： 提供了一种处理衬底的方法，包括在处理室中的衬底上沉积过渡层和电介质层。 过渡层由包括有机硅化合物和氧化气体的处理气体沉积。 在沉积过渡层期间，有机硅化合物的流速升高，使得过渡层具有碳浓度梯度和氧浓度梯度。 过渡层改善了介电层对基底上的下层阻挡层的粘合性。
-
公开(公告)号：US20130213574A1
公开(公告)日：2013-08-22
申请号：US13676820
申请日：2012-11-14
申请人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： B08B7/00
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
-
公开(公告)号：US20110034034A1
公开(公告)日：2011-02-10
申请号：US12851794
申请日：2010-08-06
申请人： Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Ganesh Balasubramanian , Lipyeow Yap , Jianhua Zhou , Thomas Nowak
发明人： Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Ganesh Balasubramanian , Lipyeow Yap , Jianhua Zhou , Thomas Nowak
CPC分类号： H01L21/68 , B05C13/00 , C23C16/4585 , H01J37/32091 , H01L21/324 , H01L21/67103 , H01L21/68728 , H01L21/6875
摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.
摘要翻译： 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。
-
公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
-
公开(公告)号：US20110294303A1
公开(公告)日：2011-12-01
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： C23C16/44 , H01L21/30 , C23C16/509
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.021 秒)
