公开(公告)号：US06666312B2

公开(公告)日：2003-12-23

申请号：US10128755

申请日：2002-04-24

申请人： Gerald Matranga ,  Andrew Clark

发明人： Gerald Matranga ,  Andrew Clark

IPC分类号： F16D2510

CPC分类号： B63H23/30 ,  F16D25/0638 ,  F16D25/14 ,  F16D48/02 ,  F16D48/0206 ,  F16D2048/0209 ,  F16D2048/0221 ,  F16D2048/0266 ,  F16D2500/1045 ,  F16D2500/1105 ,  F16D2500/3146 ,  F16D2500/7041

摘要： A transmission housing having a modulatable power transmission therein which includes a clutch having interleaved clutch plates and having a central power transmitting shaft extending axially through the clutch. The clutch includes a fluid operated movable piston for effecting clutch operation by compression of the plates. The piston has a smaller piston area and a larger piston area, the smaller piston area has fluid flow directed to it at a variable fluid pressure whereby the clutch is modulatable. The larger piston area is adapted to have fluid flow directed thereto to effect maximum and unmodulatable engagement of the clutch. A spring loaded normally closed trigger valve controls fluid flow to the larger piston area in response to fluid pressure above a predetermined amount at the smaller piston area. The trigger valve is mounted on the outside of the transmission housing and is readily accessible for adjustment, for example. The trigger valve is normally closed so that pressure fluid is directed to the smaller piston area at a variable fluid pressure whereby the clutch is modulatable. When the valve is open by fluid pressure over a predetermined amount, the valve permits fluid flow to the larger piston area to effect maximum and unmodulatable engagement of the clutch for full clutch capacity.

摘要翻译： 一种其中具有可调节动力传递的变速器壳体，其包括具有交错离合器片的离合器，并具有轴向延伸穿过离合器的中心动力传递轴。 离合器包括流体操作的可移动活塞，用于通过压板来实现离合器操作。 活塞具有较小的活塞面积和较大的活塞面积，较小的活塞面积以可变流体压力流向其中，从而离合器是可调节的。 较大的活塞面积适于使流体流动引导到其上以实现离合器的最大和不可调制的接合。 弹簧加载的常闭触发阀响应于较小活塞区域处的预定量的流体压力控制流入较大活塞面积的流体。 触发阀安装在变速器壳体的外侧，并且例如易于调节。 触发阀常闭，使得压力流体以可变的流体压力被引导到较小的活塞区域，由此离合器是可调节的。 当阀门通过流体压力超过预定量打开时，阀门允许流体流向较大的活塞区域，以实现离合器的最大和不可调制的接合以实现完全离合器的容量。

公开(公告)号：US20050183776A1

公开(公告)日：2005-08-25

申请号：US10784854

申请日：2004-02-23

申请人： Gerald Matranga ,  Andrew Clark

发明人： Gerald Matranga ,  Andrew Clark

IPC分类号： G05D16/04 ,  G05D16/10

CPC分类号： G05D16/10 ,  Y10T137/7835

摘要： The present invention is a pressure regulator for regulating a fluctuatable fluid pressure of a fluid flow, the fluid flow being received from a first device and being transmitted to a second device, including a spool valve being translatable between a closed non-regulating disposition and an open regulating disposition, a throttled portion of a fluid flow acting on a first spool working surface and a main portion of the fluid flow acting on a second opposed spool working surface. A method of regulating a fluctuatable fluid pressure is further included.

摘要翻译： 本发明是用于调节流体流动的可变流体压力的压力调节器，该流体流从第一装置接收并被传递到第二装置，该第二装置包括可在闭合非调节配置和 打开调节配置，作用在第一卷轴工作表面上的流体流的节流部分和作用在第二相对的卷轴工作表面上的流体流的主要部分。 还包括调节可变流体压力的方法。

公开(公告)号：US09443939B2

公开(公告)日：2016-09-13

申请号：US14924047

申请日：2015-10-27

申请人： Rytis Dargis ,  Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Michael Lebby

发明人： Rytis Dargis ,  Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Michael Lebby

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/16

摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

摘要翻译： 一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层 在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。 单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。 生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

公开(公告)号：US09142406B1

公开(公告)日：2015-09-22

申请号：US14269011

申请日：2014-05-02

申请人： Rytis Dargis ,  Andrew Clark ,  Nam Pham ,  Erdem Arkun

发明人： Rytis Dargis ,  Andrew Clark ,  Nam Pham ,  Erdem Arkun

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L21/0251 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254

摘要： III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.

摘要翻译： 在包括单晶硅或单晶蓝宝石中的一种的衬底上的缓冲器上生长的III-N材料。 包括ErxAl1-xN或（RE1yRE21-y）xAl1-xN中的一种的单晶合金缓冲液位于基板上。 一层单晶III-N材料位于缓冲层的表面上，单晶合金具有与单晶III-N材料层基本晶格匹配的晶格常数。 当III-N材料为GaN时，合金配方中的x从衬底附近的小于1变化到大于或等于与单晶GaN层相邻的0.249。

公开(公告)号：US20150069409A1

公开(公告)日：2015-03-12

申请号：US14487820

申请日：2014-09-16

申请人： Rytis Dargis ,  Andrew Clark ,  Erdem Arkun

发明人： Rytis Dargis ,  Andrew Clark ,  Erdem Arkun

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/205 ,  H01L29/20

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787

摘要： A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.

摘要翻译： 在硅衬底上生长的异质结构包括位于硅衬底上的单晶稀土氧化物模板，该模板基本上与硅衬底的表面晶格匹配。 异质结构位于模板上并且在III-N层和III-III-N层之间的界面处限定至少一个异质结。 模板和异质结构被晶体匹配以在至少一个异质结处诱导工程化的预定拉伸应变。 在异质结构上生长单晶稀土氧化物电介质层，以在单晶稀土氧化物介电层中引起工程化的预定压应力，并在III-III-N层中引起拉伸应变。 III-III-N层中的拉伸应变和REO层中的压应力组合以诱导压电场，导致异质结中2DEG中的较高载流子浓度。

公开(公告)号：US20140225123A1

公开(公告)日：2014-08-14

申请号：US14180079

申请日：2014-02-13

申请人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark ,  Rytis Dargis

发明人： Erdem Arkun ,  Michael Lebby ,  Andrew Clark ,  Rytis Dargis

IPC分类号： H01L33/46 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/46 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A III-N template formed on a silicon substrate includes a Distributed Bragg Reflector positioned on the silicon substrate. The Distributed Bragg Reflector is substantially crystal lattice matched to the surface of the silicon substrate. An aluminum oxide layer is positioned on the surface of the Distributed Bragg Reflector and substantially crystal lattice matched to the surface of the Distributed Bragg Reflector. A layer of aluminum nitride (AlN) is positioned on the surface of the aluminum oxide layer and substantially crystal lattice matched to the surface of the aluminum oxide layer. A III-N LED structure including at least one III-N layer can then be grown on the aluminum nitride layer and substantially crystal lattice matched to the surface of the aluminum nitride layer.

摘要翻译： 形成在硅衬底上的III-N模板包括位于硅衬底上的分布式布拉格反射器。 分布布拉格反射器与硅衬底的表面基本上晶格匹配。 一个氧化铝层位于分布式布拉格反射体的表面上，并且基本上与分布式布拉格反射器表面匹配的晶格。 一层氮化铝（AlN）位于氧化铝层的表面上，并且与氧化铝层的表面基本上晶格匹配。 然后可以在氮化铝层上生长包括至少一个III-N层的III-N LED结构，并且基本上与氮化铝层的表面匹配的晶格。

公开(公告)号：US08678665B2

公开(公告)日：2014-03-25

申请号：US11683709

申请日：2007-03-08

申请人： Andrew Clark

发明人： Andrew Clark

IPC分类号： F16C19/24 ,  F16C19/10 ,  F16D11/00

CPC分类号： F16C19/54 ,  B63H23/02 ,  B63H23/08 ,  B63H23/30 ,  F16C19/52 ,  F16C35/04 ,  F16C2326/30 ,  F16H57/021 ,  Y10T74/2186

摘要： A bearing arrangement to reduce the effects of thermal expansion in a marine transmission includes a pinion gear thrust bearing, a clutch shaft thrust bearing, a shaft roller bearing and a thrust washer. The clutch shaft thrust bearing is retained on one end of a clutch shaft and the shaft roller bearing is retained on the other end of the clutch shaft. A pinion gear is rotatably retained on the clutch shaft. The pinion gear thrust bearing is retained on the pinion gear with a bearing retainer. The thrust washer is retained on the bearing retainer. An end of the clutch shaft thrust bearing rotates relative to the thrust washer and makes contact therewith. The length of thermal expansion in the transmission housing is limited to the distance between the opposing ends of the two thrust bearings.

摘要翻译： 用于减小船用变速器中的热膨胀效应的轴承装置包括小齿轮推力轴承，离合器轴推力轴承，轴承滚子轴承和止推垫圈。 离合器轴推力轴承保持在离合器轴的一端，轴滚子轴承保持在离合器轴的另一端。 小齿轮可旋转地保持在离合器轴上。 小齿轮推力轴承用轴承座保持在小齿轮上。 止推垫圈固定在轴承座上。 离合器轴推力轴承的一端相对于止推垫圈旋转并与其接触。 变速器壳体中的热膨胀长度被限制在两个推力轴承的相对端之间的距离。

公开(公告)号：US08636844B1

公开(公告)日：2014-01-28

申请号：US13543093

申请日：2012-07-06

申请人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby

发明人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby

IPC分类号： C30B25/00

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521

摘要： A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.

摘要翻译： 在硅衬底上形成模板的方法包括在硅衬底上外延生长单晶三元稀土氧化物的模板，并在模板上外延生长单晶半导体活性层。 有源层具有立方晶体或六方晶体结构。 在模板的外延生长期间，选择氧的分压，并且选择包含在三元稀土氧化物中的金属的比例以在与衬底的较低界面处的模板的晶体间距和结构相匹配并且匹配晶体间距 以及在半导体活性层的晶体间距和结构的上界面处的模板的结构。 模板生长期间的高氧分压产生稳定的立方晶体结构，低氧分压产生具有六方晶系结构的主峰。

公开(公告)号：US08602193B2

公开(公告)日：2013-12-10

申请号：US12605962

申请日：2009-10-26

申请人： Andrew Clark

发明人： Andrew Clark

IPC分类号： F16C35/077 ,  F16H57/02

CPC分类号： B63H23/02 ,  B63H23/08 ,  B63H23/30 ,  F16C19/52 ,  F16C19/54 ,  F16C25/08 ,  F16C35/04 ,  F16C2326/30 ,  F16H57/021 ,  Y10T74/2186

摘要： A bearing arrangement is provided that reduces effects of differences in rates of thermal expansion between transmission housings and shaft assemblies that are made from different materials. The bearing arrangement locates the bearings with respect to other components of a shaft assembly in a manner that establishes a bearing setting stack path along components that are made from materials having common coefficients of thermal expansion, despite the shaft assembly and bearing arrangements being mounted within a housing that is made from a material which has a dissimilar coefficient of thermal expansion.

摘要翻译： 提供了一种轴承布置，其减少了由不同材料制成的变速器壳体和轴组件之间的热膨胀率差异的影响。 轴承装置相对于轴组件的其他部件定位轴承，其方式是沿着具有共同热膨胀系数的材料制成的部件建立轴承定位叠层路径，尽管轴组件和轴承装置安装在 由具有不同热膨胀系数的材料制成的壳体。

公开(公告)号：US20130214282A1

公开(公告)日：2013-08-22

申请号：US13399334

申请日：2012-02-17

申请人： Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Robin Smith ,  Michael Lebby

发明人： Erdem Arkun ,  Radek Roucka ,  Andrew Clark ,  Robin Smith ,  Michael Lebby

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/1075 ,  H01L29/2003

摘要： A method of fabricating a layer of single crystal semiconductor material on a silicon substrate including providing a crystalline silicon substrate and epitaxially depositing a nano structured interface layer on the substrate. The nano structured interface layer has a thickness up to a critical thickness. The method further includes epitaxially depositing a layer of single crystal semiconductor material in overlying relationship to the nano structured interface layer. Preferably, the method includes the nano structured interface layer being a layer of coherently strained nano dots of selected material. The critical thickness of the nano dots includes a thickness up to a thickness at which the nano dots become incoherent.

摘要翻译： 一种在硅衬底上制造单晶半导体材料层的方法，包括提供晶体硅衬底并在衬底上外延沉积纳米结构化界面层。 纳米结构界面层具有至多临界厚度的厚度。 该方法还包括以与纳米结构界面层重叠的关系外延沉积单晶半导体材料层。 优选地，该方法包括纳米结构界面层，其是选定材料的相干应变纳米点层。 纳米点的临界厚度包括达到纳米点变得不相干的厚度的厚度。