公开(公告)号：US20100012190A1

公开(公告)日：2010-01-21

申请号：US12503109

申请日：2009-07-15

申请人： Hajime GOTO ,  Tomoaki Ohashi ,  Junichi Motohisa ,  Takashi Fukui

发明人： Hajime GOTO ,  Tomoaki Ohashi ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/03529 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a nanowire photovoltaic cell (1) including a semiconductor substrate (2) and a plurality of nanowire semiconductors (4) and (5) having a PN junction. The semiconductor substrate (2) and the nanowire semiconductors (4) and (5) are composed of one single crystal. The manufacture method of the nanowire photovoltaic cell includes a step of coating a part of a surface of the semiconductor substrate (2) with an amorphous film (3), and a step of developing a crystal of a material identical to that of the semiconductor substrate (2) through epitaxial growth on the uncoated surface of the semiconductor substrate (2) to form the plurality of nanowire semiconductors (4) and (5).

摘要翻译： 提供了包括半导体衬底（2）和具有PN结的多个纳米线半导体（4）和（5）的纳米线光伏电池（1）。 半导体衬底（2）和纳米线半导体（4）和（5）由一个单晶构成。 纳米线光伏电池的制造方法包括用非晶质膜（3）涂覆半导体衬底（2）的一部分表面的步骤，以及与半导体衬底的材料相同的晶体的显影步骤 （2）通过在半导体衬底（2）的未涂覆表面上外延生长以形成多个纳米线半导体（4）和（5）。

公开(公告)号：US20110126891A1

公开(公告)日：2011-06-02

申请号：US12955193

申请日：2010-11-29

申请人： Hajime Goto ,  Hirotaka Endo ,  Kenji Hiruma ,  Junichi Motohisa ,  Takashi Fukui

发明人： Hajime Goto ,  Hirotaka Endo ,  Kenji Hiruma ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L31/06 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L31/035281 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/0262 ,  H01L27/14607 ,  H01L27/153 ,  H01L31/03048 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/075 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1848 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell element having improved power generation efficiency is provided. A solar cell element 100 has a substrate 110, a mask pattern 120, semiconductor nanorods 130, a first electrode 150 and a second electrode 160. The semiconductor nanorods 130 are disposed in triangular lattice form as viewed in plan on the substrate 110. The ratio p/d of the center-to-center distance p between each adjacent pair of the semiconductor nanorods 130 and the minimum diameter d of the semiconductor nanorods 130 is within the range from 1 to 7. Each semiconductor nanorod 130 has a central nanorod 131 formed of a semiconductor of a first conduction type, a first cover layer 132 formed of an intrinsic semiconductor and covering the central nanorod 131, and a second cover layer 138 formed of a semiconductor of a second conduction type and covering the first cover layer 132.

摘要翻译： 提供了具有提高的发电效率的太阳能电池元件。 太阳能电池元件100具有基板110，掩模图案120，半导体纳米棒130，第一电极150和第二电极160.半导体纳米棒130以平面图中所示的三角格子形状设置在基板110上。比率 每个相邻的半导体纳米棒130对之间的中心到中心距离p的p / d和半导体纳米棒130的最小直径d在1至7的范围内。每个半导体纳米棒130具有形成的中心纳米棒131 第一导电类型的半导体，由本征半导体形成并覆盖中心纳米棒131的第一覆盖层132以及由第二导电类型的半导体形成并覆盖第一覆盖层132的第二覆盖层138。

公开(公告)号：US20110155236A1

公开(公告)日：2011-06-30

申请号：US12975755

申请日：2010-12-22

申请人： Hajime Goto ,  Takashi Fukui ,  Junichi Motohisa ,  Kenji Hiruma

发明人： Hajime Goto ,  Takashi Fukui ,  Junichi Motohisa ,  Kenji Hiruma

IPC分类号： H01L31/06 ,  H01L31/0352 ,  B82Y40/00

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/03529 ,  H01L31/0693 ,  H01L31/077 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： To provide a solar cell enabling practical electric power to be obtained and excitons to be effectively collected, and a manufacturing method of the solar cell. A nanowire solar cell 1 comprises: a semiconductor substrate 2; a plurality of nanowire semiconductors 4 and 5 forming pn junctions; a transparent insulating material 6 filled in the gap between the plurality of nanowire semiconductors 4 and 5; an electrode 7 covering the end portion of the plurality of nanowire semiconductors 4 and 5; and a passivation layer 10 provided between the semiconductor 5 and the transparent insulating material 6 and between the semiconductor 5 and the electrode 7.

摘要翻译： 提供能够获得实际电力并有效收集激子的太阳能电池，以及太阳能电池的制造方法。 纳米线太阳能电池1包括：半导体衬底2; 形成pn结的多个纳米线半导体4和5; 填充在多个纳米线半导体4和5之间的间隙中的透明绝缘材料6; 覆盖多个纳米线半导体4和5的端部的电极7; 以及设置在半导体5和透明绝缘材料6之间以及半导体5和电极7之间的钝化层10。

公开(公告)号：US07615400B2

公开(公告)日：2009-11-10

申请号：US12285158

申请日：2008-09-30

申请人： Hajime Goto ,  Junichi Motohisa ,  Takashi Fukui

发明人： Hajime Goto ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/0687 ,  H01L31/1844 ,  Y02E10/544

摘要： There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, is grown a semiconductor 2a comprising the same material as the substrate 2 in the shape of a wire. On the semiconductor 2a, are successively grown semiconductors 3, 4, 5, and 6 with a narrower band gap in the shape of a wire. The semiconductor 3 may be directly grown in the shape of a wire on the nucleation site formed on the substrate 2. It is preferred to form the nucleation site by forming an amorphous SiO2 coating 8a on the substrate 2 and etching a part of the amorphous SiO2 coating 8a. Further, it is preferred to form an insulating film 8 in the region except the nucleation sites on the substrate 2 by allowing the amorphous SiO2 coating 8a to remain therein. The semiconductor 2a is GaP; the semiconductor 3 is Al0.3Ga0.7As; the semiconductor 4 is GaAs; the semiconductor 5 is In0.3Ga0.7As; and the semiconductor 6 is In0.6Ga0.4As.

摘要翻译： 提供了一种制造具有四结的多结太阳能电池的方法，该方法允许增加器件的面积。 在形成在基板2上的成核位置上，生长包括与基板2相同的材料的半导体2a，其形式为导线。 在半导体2a上，连续生长的半导体3,4,5和6具有较窄的导线形状的带隙。 半导体3可以直接生长在形成在基板2上的成核位置上的导线形状。优选通过在基板2上形成非晶SiO 2涂层8a并蚀刻部分无定形SiO 2来形成成核位置 涂层8a。 此外，优选通过使非晶SiO2涂层8a保留在基板2上的除了成核位置以外的区域中形成绝缘膜8。 半导体2a是GaP; 半导体3是Al 0.3 Ga 0.7 As; 半导体4是GaAs; 半导体5是In 0.3 Ga 0.7 As; 半导体6为In 0.6 Ga 0.4 As。

公开(公告)号：US20090087941A1

公开(公告)日：2009-04-02

申请号：US12285158

申请日：2008-09-30

申请人： Hajime Goto ,  Junichi Motohisa ,  Takashi Fukui

发明人： Hajime Goto ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L31/0232

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/0687 ,  H01L31/1844 ,  Y02E10/544

摘要： There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate 2, is grown a semiconductor 2a comprising the same material as the substrate 2 in the shape of a wire. On the semiconductor 2a, are successively grown semiconductors 3, 4, 5, and 6 with a narrower band gap in the shape of a wire. The semiconductor 3 may be directly grown in the shape of a wire on the nucleation site formed on the substrate 2. It is preferred to form the nucleation site by forming an amorphous SiO2 coating 8a on the substrate 2 and etching a part of the amorphous SiO2 coating 8a. Further, it is preferred to form an insulating film 8 in the region except the nucleation sites on the substrate 2 by allowing the amorphous SiO2 coating 8a to remain therein. The semiconductor 2a is GaP; the semiconductor 3 is Al0.3Ga0.7As; the semiconductor 4 is GaAs; the semiconductor 5 is In0.3Ga0.7As; and the semiconductor 6 is In0.6Ga0.4As.

公开(公告)号：US20110204327A1

公开(公告)日：2011-08-25

申请号：US13124493

申请日：2008-10-17

申请人： Kenji Hiruma ,  Shinjiro Hara ,  Junichi Motohisa ,  Takashi Fukui

发明人： Kenji Hiruma ,  Shinjiro Hara ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L33/06 ,  H01L33/08

CPC分类号： H01L27/153 ,  H01L33/06 ,  H01L33/18 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.

摘要翻译： 具有多个波长的半导体表面发射元件通过MOVPE选择性生长在信号衬底上制造。 更具体地，提供了一种半导体发光元件阵列，其包括： 半导体晶体基板; 绝缘膜设置在所述基板的表面上，所述绝缘膜被分成两个或更多个区域，每个区域具有暴露所述基板的表面的两个或多个开口; 半导体棒从衬底的表面向上延伸通过开口，每个半导体棒都具有n型半导体层和p型半导体层，其沿其延伸方向层压，从而提供p-n结; 连接到所述半导体晶体基板的第一电极; 以及连接到所述半导体棒的上部的第二电极; 其中从所述衬底表面测量的所述半导体棒的高度随所述两个或更多个区域中的每一个而变化。

公开(公告)号：US08519378B2

公开(公告)日：2013-08-27

申请号：US13124493

申请日：2008-10-17

申请人： Kenji Hiruma ,  Shinjiro Hara ,  Junichi Motohisa ,  Takashi Fukui

发明人： Kenji Hiruma ,  Shinjiro Hara ,  Junichi Motohisa ,  Takashi Fukui

IPC分类号： H01L29/06

CPC分类号： H01L27/153 ,  H01L33/06 ,  H01L33/18 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.

摘要翻译： 具有多个波长的半导体表面发射元件通过MOVPE选择性生长在信号衬底上制造。 更具体地，提供了一种半导体发光元件阵列，其包括： 半导体晶体基板; 绝缘膜设置在所述基板的表面上，所述绝缘膜被分成两个或更多个区域，每个区域具有暴露所述基板的表面的两个或多个开口; 半导体棒从衬底的表面向上延伸通过开口，每个半导体棒都具有n型半导体层和p型半导体层，其沿其延伸方向层压，从而提供p-n结; 连接到所述半导体晶体基板的第一电极; 以及连接到所述半导体棒的上部的第二电极; 其中从所述衬底表面测量的所述半导体棒的高度随所述两个或更多个区域中的每一个而变化。

公开(公告)号：US20120313078A1

公开(公告)日：2012-12-13

申请号：US13581242

申请日：2011-02-23

申请人： Takashi Fukui ,  Katsuhiro Tomioka ,  Junichi Motohisa ,  Shinjiroh Hara

发明人： Takashi Fukui ,  Katsuhiro Tomioka ,  Junichi Motohisa ,  Shinjiroh Hara

IPC分类号： H01L29/12 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0676 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42

摘要： Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.

摘要翻译： 公开了一种半导体器件（10），其包括玻璃基板（12），下电极层（14），n型掺杂多晶硅半导体层（16），低温绝缘膜（20） 形成用作纳米线（32）生长的核的（22,23），在低温绝缘膜（20）上生长并具有核 - 壳结构，绝缘层（32）的纳米线（32） 围绕纳米线（32）的上部电极层（50）和上部电极层（52）。 纳米线（32）包括n型GaAs核心层和p型GaAs壳层。 或者，纳米线可以形成为具有量子阱结构的纳米线，并且可以使用能够降低工艺温度的InAs用于纳米线。

公开(公告)号：US08816324B2

公开(公告)日：2014-08-26

申请号：US13581242

申请日：2011-02-23

申请人： Takashi Fukui ,  Katsuhiro Tomioka ,  Junichi Motohisa ,  Shinjiroh Hara

发明人： Takashi Fukui ,  Katsuhiro Tomioka ,  Junichi Motohisa ,  Shinjiroh Hara

IPC分类号： H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0676 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42

摘要： Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.

摘要翻译： 公开了一种半导体器件（10），其包括玻璃基板（12），下电极层（14），n型掺杂多晶硅半导体层（16），低温绝缘膜（20） 形成用作纳米线（32）生长的核的（22,23），在低温绝缘膜（20）上生长并具有核 - 壳结构，绝缘层（32）的纳米线（32） 围绕纳米线（32）的上部电极层（50）和上部电极层（52）。 纳米线（32）包括n型GaAs核心层和p型GaAs壳层。 或者，纳米线可以形成为具有量子阱结构的纳米线，并且可以使用能够降低工艺温度的InAs用于纳米线。

公开(公告)号：US08765158B2

公开(公告)日：2014-07-01

申请号：US13480570

申请日：2012-05-25

申请人： Takashi Fukui ,  Takashi Kawata ,  Mio Ishita

发明人： Takashi Fukui ,  Takashi Kawata ,  Mio Ishita

IPC分类号： A61K8/06 ,  A61Q17/04

CPC分类号： A61K8/0254 ,  A61K8/064 ,  A61K8/19 ,  A61K8/27 ,  A61K8/29 ,  A61K8/31 ,  A61K8/33 ,  A61K8/37 ,  A61K8/42 ,  A61K8/585 ,  A61K8/891 ,  A61K2800/412 ,  A61K2800/623 ,  A61Q17/04

摘要： A cosmetic composition in the form of a W/O emulsion includes: (A) 1 to 20% by weight of a plate-like powder which has been surface-treated with an alkylalkoxysilane; (B) 0.1 to 10% by weight of an oil that is solid at temperature of 25° C.; (C) 0.5 to 60% by weight of an oil selected from the group consisting of a hydrocarbon oil, an ester oil, and an ether oil, having a viscosity at 25° C. of 500,000 mPa·s or less; and (D) water, wherein a weight ratio of the component (B) to the component (A), (B)/(A), is 0.01 to 5.

摘要翻译： W / O乳液形式的化妆品组合物包括：（A）1〜20重量％的用烷基烷氧基硅烷进行表面处理的板状粉末; （B）0.1〜10重量％的在25℃的温度下为固体的油; （C）0.5〜60重量％的选自烃油，酯油和醚油的油，其在25℃下的粘度为500,000mPa·s以下; 和（D）成分（B）与成分（A），（B）/（A）的重量比为0.01〜5的水。