公开(公告)号：US07586774B2

公开(公告)日：2009-09-08

申请号：US11675007

申请日：2007-02-14

申请人： Heung-Jin Joo ,  Byung-Gil Jeon ,  Byoung-Jae Bae ,  Ki-Nam Kim

发明人： Heung-Jin Joo ,  Byung-Gil Jeon ,  Byoung-Jae Bae ,  Ki-Nam Kim

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G11C11/221 ,  G11C11/223

摘要： A stacked ferroelectric memory device has selection transistors including a first gate structure, a first impurity region, a second impurity region, a first insulating interlayer covering the selection transistors, bit line structures electrically connected to the first impurity regions, a second insulating interlayer covering the bit line structures, doped single crystalline silicon plugs formed through the first and the second insulating interlayers, each of which contacts the second impurity region and has a height greater than that of the bit line structures, active patterns disposed on the plugs and the second insulating interlayer, each of which contacts the plugs, and ferroelectric transistors disposed on the active patterns, each of which has a second gate structure including a ferroelectric layer pattern and a conductive pattern, a third impurity region and a fourth impurity region. The ferroelectric memory device performs a random access operation and has a high degree of integration.

摘要翻译： 堆叠的铁电存储器件具有包括第一栅极结构，第一杂质区，第二杂质区，覆盖选择晶体管的第一绝缘夹层，与第一杂质区电连接的位线结构的选择晶体管，覆盖 位线结构，通过第一和第二绝缘夹层形成的掺杂单晶硅插头，每个绝缘中间层接触第二杂质区并具有高于位线结构的高度，设置在插头上的有源图案和第二绝缘层 夹层中的每个与插塞接触的铁电晶体管，以及设置在有源图案上的铁电晶体管，每个具有包括铁电层图案和导电图案的第二栅极结构，第三杂质区域和第四杂质区域。 铁电存储器件执行随机存取操作并具有高集成度。

公开(公告)号：US20070189056A1

公开(公告)日：2007-08-16

申请号：US11675007

申请日：2007-02-14

申请人： Heung-Jin Joo ,  Byung-Gil Jeon ,  Byoung-Jae Bae ,  Ki-Nam Kim

发明人： Heung-Jin Joo ,  Byung-Gil Jeon ,  Byoung-Jae Bae ,  Ki-Nam Kim

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G11C11/221 ,  G11C11/223

摘要： A stacked ferroelectric memory device has selection transistors including a first gate structure, a first impurity region, a second impurity region, a first insulating interlayer covering the selection transistors, bit line structures electrically connected to the first impurity regions, a second insulating interlayer covering the bit line structures, doped single crystalline silicon plugs formed through the first and the second insulating interlayers, each of which contacts the second impurity region and has a height greater than that of the bit line structures, active patterns disposed on the plugs and the second insulating interlayer, each of which contacts the plugs, and ferroelectric transistors disposed on the active patterns, each of which has a second gate structure including a ferroelectric layer pattern and a conductive pattern, a third impurity region and a fourth impurity region. The ferroelectric memory device performs a random access operation and has a high degree of integration.

摘要翻译： 堆叠的铁电存储器件具有包括第一栅极结构，第一杂质区，第二杂质区，覆盖选择晶体管的第一绝缘夹层，与第一杂质区电连接的位线结构的选择晶体管，覆盖 位线结构，通过第一和第二绝缘夹层形成的掺杂单晶硅插头，每个绝缘中间层接触第二杂质区并具有高于位线结构的高度，设置在插头上的有源图案和第二绝缘层 夹层中的每个与插塞接触的铁电晶体管，以及设置在有源图案上的铁电晶体管，每个具有包括铁电层图案和导电图案的第二栅极结构，第三杂质区域和第四杂质区域。 铁电存储器件执行随机存取操作并具有高集成度。

公开(公告)号：US20070158731A1

公开(公告)日：2007-07-12

申请号：US11620225

申请日：2007-01-05

申请人： Byoung-Jae Bae ,  Byung-Gil Jeon ,  Heung-Jin Joo ,  Dong-Chul Yoo ,  Sang-Don Nam

发明人： Byoung-Jae Bae ,  Byung-Gil Jeon ,  Heung-Jin Joo ,  Dong-Chul Yoo ,  Sang-Don Nam

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159

摘要： A memory device includes one or more layers of parallel strings of ferroelectric gate transistors on a substrate, each layer of parallel strings including a plurality of parallel line-shaped active regions and a plurality of word lines extending in parallel transversely across the active regions and disposed on ferroelectric patterns on the active regions. A string select gate line may extend transversely across the active regions in parallel with the word lines. A ground select gate line may extend transversely across the active regions in parallel with the word lines.

摘要翻译： 存储器件包括在衬底上的一层或多层平行的铁电栅极晶体管层，每层平行的串包括多个平行的线状有源区和跨越有源区并行延伸的多条字线， 关于活跃区域的铁电模式。 串选择栅极线可以横跨有源区域与字线平行地延伸。 接地选择栅极线可以与字线平行地跨越有源区横向延伸。

公开(公告)号：US08680500B2

公开(公告)日：2014-03-25

申请号：US13495178

申请日：2012-06-13

申请人： Gyu-Hwan Oh ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

发明人： Gyu-Hwan Oh ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

摘要： A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.

摘要翻译： 相变存储器件包括衬底上的杂质区域，有源区域中的杂质区域，至少部分地埋在杂质区域中的金属硅化物图案，杂质区域上的二极管，二极管上的下电极， 下电极上的相变层图案，以及相变层图案上的上电极。

公开(公告)号：US08340128B2

公开(公告)日：2012-12-25

申请号：US12852791

申请日：2010-08-09

申请人： Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

发明人： Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

IPC分类号： H04J3/16

CPC分类号： H04W28/065

摘要： An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size.

摘要翻译： 提供了一种用于在移动通信系统中生成和解析MAC PDU的装置和方法，其中检查要复用的MAC SDU的LCID，针对每个MAC SDU确定LF的长度，参考为 产生LCID，包括MAC SDU确定的长度的LCID和LF的MAC头，并且通过将MAC报头附加到包括MAC SDU的有效载荷来生成MAC PDU。 在MAC报头生成期间，如果考虑到MAC报头中没有最后一个LF计算的MAC PDU生成所需的填充大小大于最后一个LF的长度，则最后一个LF包含在MAC报头中， 考虑到最后一个LF的包含，重新计算所需的填充大小，并根据重新计算的填充大小添加填充。

公开(公告)号：US20050064605A1

公开(公告)日：2005-03-24

申请号：US10898564

申请日：2004-07-26

申请人： Moon-Sook Lee ,  Byoung-Jae Bae

发明人： Moon-Sook Lee ,  Byoung-Jae Bae

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/00 ,  H01L21/8242

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45514

摘要： Metal organic chemical vapor deposition (MOCVD) may be utilized in methods of forming an (111) oriented PZT ferroelectric layer at a lower temperature, a ferroelectric capacitor and methods of fabricating, and a ferroelectric memory device using the same may be provided. Using the metal organic chemical vapor deposition, ferroelectric layers, capacitors, and memory devices, which may be fabricated and may have (111) preferred oriented crystal growth.

摘要翻译： 金属有机化学气相沉积（MOCVD）可以用于在较低温度下形成（111）取向的PZT铁电体层的方法，铁电电容器和制造方法，并且可以提供使用该方法的铁电存储器件。 使用金属有机化学气相沉积，铁电层，电容器和存储器件，其可以被制造并且可以具有（111）优选的取向晶体生长。

公开(公告)号：US08804556B2

公开(公告)日：2014-08-12

申请号：US13331445

申请日：2011-12-20

申请人： Byoung-Jae Bae

发明人： Byoung-Jae Bae

IPC分类号： H04L1/00 ,  H04W76/04 ,  H04W24/10

CPC分类号： H04W24/10 ,  H04W36/0083 ,  H04W76/28 ,  Y02D70/00 ,  Y02D70/1224 ,  Y02D70/1262 ,  Y02D70/24

摘要： A system and a method for handover of a terminal in a wireless communication system are provided. The method includes transmitting, by a serving BS, measurement control information and DRX control information to a terminal; measuring, by the terminal, a channel, based on the measurement control information; operating, by the terminal, in connected DRX, based on the DRX control information; reporting, by the terminal, channel measurement information to the serving BS; determining, by the serving BS, the handover of the terminal based on the channel measurement information provided from the terminal; resetting, by the serving BS, the DRX control information of the terminal; transmitting, by the serving BS, the reset DRX control information to the terminal; operating, by the terminal, in the connected DRX, based on the reset DRX control information provided from the serving BS; and transmitting, by the serving BS, handover indication information to the terminal.

摘要翻译： 提供了一种在无线通信系统中终端切换的系统和方法。 该方法包括由服务BS向终端发送测量控制信息和DRX控制信息; 基于所述测量控制信息，由所述终端测量信道; 基于所述DRX控制信息，由所述终端操作连接的DRX; 通过终端向业务BS报告信道测量信息; 由所述服务BS根据从所述终端提供的信道测量信息确定所述终端的切换; 由服务BS重设终端的DRX控制信息; 由所述服务BS向所述终端发送所述复位DRX控制信息; 基于从所述服务BS提供的复位DRX控制信息，由所述终端在所连接的DRX中进行操作; 以及由所述服务BS向所述终端发送切换指示信息。

公开(公告)号：US20130101491A1

公开(公告)日：2013-04-25

申请号：US13708914

申请日：2012-12-07

申请人： Byoung-Jae Bae ,  Sung-Lae Cho ,  Jin-Il Lee ,  Hye-Young Park ,  Do-Hyung Kim

发明人： Byoung-Jae Bae ,  Sung-Lae Cho ,  Jin-Il Lee ,  Hye-Young Park ,  Do-Hyung Kim

IPC分类号： C01B19/04

CPC分类号： C01B19/04 ,  C23C16/305 ,  C23C16/45531 ,  C23C16/45553 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.

公开(公告)号：US07943502B2

公开(公告)日：2011-05-17

申请号：US12136176

申请日：2008-06-10

申请人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

发明人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/06

CPC分类号： H01L45/144 ,  C23C16/34 ,  C23C16/45536 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1683

摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.

摘要翻译： 提供了一种相变存储器件和用于形成相变存储器件的方法。 该方法包括通过向基底提供反应性基团来形成相变材料层。 反应性基团可以包括用于相变材料和氮的前体。

公开(公告)号：US07759667B2

公开(公告)日：2010-07-20

申请号：US11762801

申请日：2007-06-14

申请人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-il Lee ,  Hye-Young Park ,  Ji-Eun Lim

发明人： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-il Lee ,  Hye-Young Park ,  Ji-Eun Lim

IPC分类号： H01L29/04

CPC分类号： H01L45/148 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

摘要： A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.

摘要翻译： 相变存储器件包括设置在基板上的下电极，包括暴露下电极的接触孔并覆盖基板的层间绝缘层，填充接触孔的电阻材料图案，插入在电阻材料之间的相变图案 图案和层间绝缘层，并且在电阻材料图案和下电极之间延伸，其中电阻材料图案具有比相变图案更高的电阻，以及与相变图案接触的上电极，上电极为 通过相变图案电连接到下电极。