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    Nitride compound semiconductor light emitting device
    1.
    发明授权
    Nitride compound semiconductor light emitting device 失效
    氮化物半导体发光元件

    公开(公告)号：US06242761B1

    公开(公告)日：2001-06-05

    申请号：US09026941

    申请日：1998-02-20

    申请人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    发明人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    IPC分类号： H01L2972

    CPC分类号： H01L33/145 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/32341

    摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

    摘要翻译： 为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足 注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层 ，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。 通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。 当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

    Nitride-based semiconductor element and method for manufacturing the same
    2.
    发明授权
    Nitride-based semiconductor element and method for manufacturing the same 有权
    氮化物系半导体元件及其制造方法

    公开(公告)号：US6015979A

    公开(公告)日：2000-01-18

    申请号：US143560

    申请日：1998-08-28

    申请人： Lisa Sugiura ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Masaaki Onomura ,  Masahiro Yamamoto

    发明人： Lisa Sugiura ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Masaaki Onomura ,  Masahiro Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L27/15 ,  H01L23/58 ,  H01L31/12 ,  H01L31/153

    CPC分类号： H01L33/025 ,  H01L33/007

    摘要： Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.

    摘要翻译： 氮化物系半导体元件包括第一层，形成在第一层上的掩模，并且具有多个开口部分，形成在掩模上的氮化物基化合物半导体层，所述氮化物基化合物半导体层包括具有穿线的第一区域 以这样的方式产生的位错，即在掩模中的多个开口部分的两个相邻的开口部分中的大致中间部分中，多个位错在垂直方向上延伸到掩模的表面，第二区域包括部分 除了中间部分之外并且没有位错，以及形成在半导体层上的期望的元件结构。

    Semiconductor laser and method of fabricating same
    9.
    发明授权
    Semiconductor laser and method of fabricating same 有权
    半导体激光器及其制造方法

    公开(公告)号：US06400742B1

    公开(公告)日：2002-06-04

    申请号：US09498372

    申请日：2000-02-04

    申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

    摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

    摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

    Gallium nitride-based compound semiconductor device
    10.
    发明授权
    Gallium nitride-based compound semiconductor device 失效
    氮化镓系化合物半导体器件

    公开(公告)号：US6064079A

    公开(公告)日：2000-05-16

    申请号：US115239

    申请日：1998-07-14

    申请人： Masahiro Yamamoto ,  Shinya Nunoue ,  Katsunobu Sasanuma ,  Masayuki Ishikawa

    发明人： Masahiro Yamamoto ,  Shinya Nunoue ,  Katsunobu Sasanuma ,  Masayuki Ishikawa

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/305 ,  H01L33/145 ,  H01S5/3063 ,  H01S5/34333

    摘要： Disclosed is a gallium nitride-based compound semiconductor device, including a laminate film consisting of a plurality of layers stacked one upon the other to form a pn-junction and formed of InGaAlN. The semiconductor device also includes an n-side electrode and a p-side electrode to supply current to the pn-junction. Further included is a heat generation structure formed within the laminate film. The heat generation structure includes a low resistivity portion having a relatively low resistivity and a high resistivity portion having a relatively high resistivity and positioned adjacent to the low resistivity portion. The low resistivity portion and the high resistivity portion are formed within a single layer, differ from each other in carrier concentration, and formed by introducing an impurity into the single layer in a different dose such that the low resistivity portion is positioned closer to the p-side electrode than the high resistivity portion.

    摘要翻译： 公开了一种氮化镓基化合物半导体器件，其包括由多个层叠的多个层组成的叠层膜，以形成由InGaAlN形成的pn结。 半导体器件还包括n侧电极和p侧电极以向pn结提供电流。 还包括形成在层压膜内的发热结构。 发热结构包括具有较低电阻率的低电阻率部分和具有相对较高电阻率并且邻近低电阻率部分定位的高电阻率部分。 低电阻率部分和高电阻率部分形成在单层内，在载流子浓度上彼此不同，并且通过以不同的剂量将杂质引入单层而形成，使得低电阻率部分更靠近p 比电阻率高的部分。