公开(公告)号：US20060024952A1

公开(公告)日：2006-02-02

申请号：US11136494

申请日：2005-05-25

申请人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

发明人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76873

摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

公开(公告)号：US07202168B2

公开(公告)日：2007-04-10

申请号：US11136494

申请日：2005-05-25

申请人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

发明人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

IPC分类号： H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76873

摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

公开(公告)号：US08610353B2

公开(公告)日：2013-12-17

申请号：US13224879

申请日：2011-09-02

申请人： Hitoshi Itoh ,  Hidenori Miyoshi ,  Masaru Hori ,  Hirotaka Toyoda ,  Makoto Sekine

发明人： Hitoshi Itoh ,  Hidenori Miyoshi ,  Masaru Hori ,  Hirotaka Toyoda ,  Makoto Sekine

IPC分类号： H01J7/24 ,  H05B31/26

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H2001/4622

摘要： An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.

摘要翻译： 一种用于产生等离子体的装置，包括：微波发生器，被配置为产生微波; 与微波发生器连接的波导，其中波导在微波的行进方向上伸长，并且具有在与行进方向垂直的方向上具有矩形截面的中空形状; 气体供给器，其连接到波导并将处理气体馈送到波导中; 以及天线单元，其是波导的一部分并将由微波产生的等离子体放电到外部，其中天线单元具有形成在构成天线单元的部分中的短边的壁上的一个或多个槽， 通过微波在大气压下在槽中供给到波导管中的工艺气体，并将等离子体从槽中排出。

公开(公告)号：US06849923B2

公开(公告)日：2005-02-01

申请号：US10086556

申请日：2002-03-04

申请人： Shoji Seta ,  Makoto Sekine ,  Naofumi Nakamura

发明人： Shoji Seta ,  Makoto Sekine ,  Naofumi Nakamura

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L23/58

CPC分类号： H01L21/31116 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76897 ,  H01L2221/1031 ,  H01L2924/30107

摘要： Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal to the first wiring structure and including a second plug and a second wiring formed on the second plug, wherein the upper surface of the first wiring is positioned higher than the upper surface of the second wiring, and the lower surface of the first wiring is positioned flush with or lower than the upper surface of the second wiring. The present invention also provides a method of manufacturing the particular semiconductor device.

公开(公告)号：US06352931B1

公开(公告)日：2002-03-05

申请号：US09522175

申请日：2000-03-09

申请人： Shoji Seta ,  Makoto Sekine ,  Naofumi Nakamura

发明人： Shoji Seta ,  Makoto Sekine ,  Naofumi Nakamura

IPC分类号： H01L21391

CPC分类号： H01L21/76829 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76897 ,  H01L2221/1031 ,  H01L2924/30107

摘要： There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having a dual-damascene structure to control the shape and depth and prevent borderless etching which must be solved when a trench is formed. Polysilane and an insulating film are formed into a laminated structure so as to be integrated with each other after a dry etching step has been completed to easily form a contact hole having a high aspect ratio. The surface of polysilane is selectively formed into an insulating film so as to be used as a mask for use in a dry etching step. Polysilane for use as an anti-reflective film or an etching mask is changed to an oxide film or a nitride film so that films are easily removed. Hence it follows that a device region and a device isolation region of a densely integrated circuit can be smoothed, a self-aligned contact hole and metallization trench can be formed with a satisfactory manufacturing yield and the pattern of a gate electrode can be formed.

摘要翻译： 提供了使用有机硅膜形成具有双镶嵌结构，接触孔和深沟槽掩模的层间绝缘膜的方法。 处理聚硅烷等的形状，使得聚硅烷用作具有双镶嵌结构的层间绝缘膜，以控制形状和深度，并防止当形成沟槽时必须解决的无边界蚀刻。 聚硅烷和绝缘膜形成为层压结构，以便在干蚀刻步骤完成之后彼此一体化，以容易地形成具有高纵横比的接触孔。 聚硅烷的表面选择性地形成绝缘膜，以便用作用于干蚀刻步骤的掩模。 用作抗反射膜或蚀刻掩模的聚硅烷改变为氧化物膜或氮化物膜，使得膜容易除去。 因此，可以平滑密集集成电路的器件区域和器件隔离区域，可以以令人满意的制造成品形成自对准接触孔和金属化沟槽，并且可以形成栅电极的图案。

公开(公告)号：US5660744A

公开(公告)日：1997-08-26

申请号：US492322

申请日：1995-06-19

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.

摘要翻译： 表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。 磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个 多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。 一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于 一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

公开(公告)号：US5444207A

公开(公告)日：1995-08-22

申请号：US37169

申请日：1993-03-26

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： B23K10/00 ,  H01J37/32 ,  H01L21/00 ,  H05H1/18

CPC分类号： H01J37/32623 ,  B23K10/003 ,  H01J37/3266

摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.

摘要翻译： 一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。 该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。 磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

公开(公告)号：US5112645A

公开(公告)日：1992-05-12

申请号：US622275

申请日：1990-12-06

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213

CPC分类号： C23C16/483 ,  C23C16/482 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/32137 ,  H01L21/32139

摘要： A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is coated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and the second light.

公开(公告)号：US07138700B2

公开(公告)日：2006-11-21

申请号：US10807239

申请日：2004-03-24

申请人： Ryuji Tomita ,  Tetsuya Kurokawa ,  Takashi Ishigami ,  Manabu Iguchi ,  Kazuyoshi Ueno ,  Makoto Sekine

发明人： Ryuji Tomita ,  Tetsuya Kurokawa ,  Takashi Ishigami ,  Manabu Iguchi ,  Kazuyoshi Ueno ,  Makoto Sekine

IPC分类号： H01L29/00

CPC分类号： H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.

摘要翻译： 半导体器件具有围绕电路区域的第一保护环，设置在电路区域和第一保护环之间的第二环以及将第一保护环和第二保护环彼此连接的第一连接。 夹在第一保护环和第二保护环之间的区域被第一连接分成多个子区域。 即使第一保护环部分缺陷，水从外部进入仅与第一保护环的缺陷部分相邻的子区域。

公开(公告)号：US5776557A

公开(公告)日：1998-07-07

申请号：US728613

申请日：1996-10-10

申请人： Haruo Okano ,  Sadahisa Noguchi ,  Makoto Sekine

发明人： Haruo Okano ,  Sadahisa Noguchi ,  Makoto Sekine

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/44 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/76879 ,  Y10S148/05

摘要： A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

摘要翻译： 一种薄膜形成方法，包括以下步骤：在反应容器中支撑待处理的衬底，其上具有沟槽或不均匀性; 将反应性气体引入反应容器中; 激活反应气体以形成沉积物，所述沉积物质的特征在于包括由三维点相交的熔解曲线和蒸发曲线限定的液相区域的相图; 以及在所述基板上形成含有所述沉积物种的至少一部分的薄膜，同时保持所述沉积物质在所述反应容器中的压力高于所述沉积物种类相图的三重点，并且保持所述基板的温度 在沉积物相的相图区域内。