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公开(公告)号：US4476620A
公开(公告)日：1984-10-16
申请号：US480794
申请日：1983-03-31
CPC分类号： H01L33/025 , H01L33/18 , H01L2224/48091 , H01L2924/12041 , H01L2933/0016 , H01L33/38 , H01L33/62 , Y10S438/964 , Y10S438/969
摘要： The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
摘要翻译： 氮化镓发光二极管的基板在其表面上的给定位置处被制成粗糙的，或者在生长n型导电氮化镓层和半导体基板之前，在基板的表面上附着绝缘膜带状图案， 绝缘氮化镓层。 结果，在半绝缘层中在与粗糙表面或绝缘膜条带图案相对应的位置处形成高导电率区域，使得每个高导电率区域从n型导电层延伸到上部 半绝缘层的表面，以作为与电极连接的导体。 以相同的方式，在二极管晶片中沿着切口部分形成类似的高导电区域，从而防止每个二极管芯片在切割时受损。
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2.发明授权Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition 失效利用外延沉积制造GaN电致发光半导体器件的方法
公开(公告)号：US4473938A
公开(公告)日：1984-10-02
申请号：US484374
申请日：1983-04-12
IPC分类号： H01L21/205 , H01L21/86 , H01L33/32 , H01L33/40 , H01L21/20 , H01L21/285
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L33/0008 , H01L33/007 , Y10S117/913
摘要： An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
摘要翻译： 一种电致发光半导体器件，包括依次外延沉积在热处理蓝宝石衬底的表面上的导电和阻性结晶氮化镓（GaN）的主体，以及外延沉积在电阻体上的绝缘晶体氮化镓体。
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3.发明授权
公开(公告)号：US4396929A
公开(公告)日：1983-08-02
申请号：US199097
申请日：1980-10-20
CPC分类号： H01L33/025 , H01L33/18 , H01L2224/16245 , H01L2224/48091 , H01L2933/0016 , H01L33/382 , H01L33/62
摘要： The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
摘要翻译： 氮化镓发光二极管的基板在其表面上的给定位置处被制成粗糙的，或者在生长n型导电氮化镓层和半导体基板之前，在基板的表面上附着绝缘膜带状图案， 绝缘氮化镓层。 结果，在半绝缘层中在与粗糙表面或绝缘膜条带图案相对应的位置处形成高导电率区域，使得每个高导电率区域从n型导电层延伸到上部 半绝缘层的表面，以作为与电极连接的导体。 以相同的方式，在二极管晶片中沿着切口部分形成类似的高导电区域，从而防止每个二极管芯片在切割时受损。
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4.发明授权
公开(公告)号：US4408217A
公开(公告)日：1983-10-04
申请号：US213599
申请日：1980-12-04
IPC分类号： H01L21/205 , H01L21/86 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L33/0008 , H01L33/007 , Y10S117/913
摘要： An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
摘要翻译： 一种电致发光半导体器件，包括依次外延沉积在热处理蓝宝石衬底的表面上的导电和阻性结晶氮化镓（GaN）的主体，以及外延沉积在电阻体上的绝缘晶体氮化镓体。
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公开(公告)号：US3984263A
公开(公告)日：1976-10-05
申请号：US514917
申请日：1974-10-15
申请人： Ichiro Asao , Yoshimasa Ohki , Isamu Akasaki , Masafumi Hashimoto
发明人： Ichiro Asao , Yoshimasa Ohki , Isamu Akasaki , Masafumi Hashimoto
IPC分类号： C30B29/44 , C30B33/00 , H01L21/205 , H01L21/324 , H01L33/00
CPC分类号： H01L21/02461 , C30B29/44 , C30B33/00 , H01L21/02392 , H01L21/02543 , H01L21/02579 , H01L21/02631 , Y10S148/003 , Y10S148/022 , Y10S148/065 , Y10S148/079 , Y10S148/097 , Y10S148/119 , Y10S438/902 , Y10S438/909 , Y10S438/98
摘要： A nitrogen-doped n-type epitaxial layer of GaP grown from a vapor phase is heated at a temperature ranging from 740.degree. to 1000.degree.C for a selected period of time depending on the temperature. The heat treatment is carried out in H.sub.2, N.sub.2 or Ar in the presence of Ga and P vapors. Alternatively, a protection coating of SiO.sub.2, Si.sub.3 N.sub.4 or Al.sub.2 O.sub.3 is formed on the epitaxial layer prior to the heat treatment.
摘要翻译： 将从气相生长的氮掺杂n型外延层的GaP在740℃〜1000℃的温度范围内，根据温度加热一段选定的时间。 在Ga和P蒸气的存在下，在H2，N2或Ar中进行热处理。 或者，在热处理之前，在外延层上形成SiO 2，Si 3 N 4或Al 2 O 3的保护涂层。
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公开(公告)号：US20130330913A1
公开(公告)日：2013-12-12
申请号：US14001454
申请日：2011-02-25
申请人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02365 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L2224/16225
摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
摘要翻译： 一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。 对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。 这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。
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公开(公告)号：US20080277670A1
公开(公告)日：2008-11-13
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。
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8.发明授权Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效二硼化物单晶基板，使用这种半导体器件及其制造方法公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。
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公开(公告)号：US20070145557A1
公开(公告)日：2007-06-28
申请号：US11710744
申请日：2007-02-26
IPC分类号： H01L23/02
CPC分类号： H01L33/22 , H01L33/38 , H01L2933/0016
摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。
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公开(公告)号：US20060043396A1
公开(公告)日：2006-03-02
申请号：US11215406
申请日：2005-08-29
申请人： Michinobu Tsuda , Masataka Imura , Akira Honshio , Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Michinobu Tsuda , Masataka Imura , Akira Honshio , Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L29/22
CPC分类号： H01L33/32 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/16
摘要： An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°
摘要翻译： 一种用于制造场效应晶体管（FET）的外延衬底，其具有至少由氮化镓或氮化铟镓制成的沟道层和由氮化铝镓制成的势垒层在蓝宝石衬底的主面上连续形成的异质结结构， 其中所述蓝宝石衬底半导体的主平面从（01-12）面朝向（0001）面倾斜角度α为0°
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