Semiconductor device for a DC-DC converter
    9.
    发明授权
    Semiconductor device for a DC-DC converter 有权
    用于DC-DC转换器的半导体器件

    公开(公告)号:US09024423B2

    公开(公告)日:2015-05-05

    申请号:US12767071

    申请日:2010-04-26

    摘要: A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with a gate pad electrode of the lower semiconductor chip in a plan view. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other. Accordingly, the size of a semiconductor device can be reduced.

    摘要翻译: 一种半导体芯片,其中功率MOSFET被放置在其上形成另一功率MOSFET的半导体芯片之上,并且它们用封装树脂密封。 半导体芯片布置成使得上半导体芯片在平面图中不与下半导体芯片的栅极焊盘电极重叠。 半导体芯片的尺寸相同,并且下半导体芯片和上半导体芯片的各个源极焊盘电极和栅极焊盘电极的形状和布置相同。 下半导体芯片和上半导体芯片被布置成它们各自的中心彼此偏离。 因此,可以减小半导体器件的尺寸。