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公开(公告)号:US20120261825A1
公开(公告)日:2012-10-18
申请号:US13533391
申请日:2012-06-26
申请人: Nobuya KOIKE , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人: Nobuya KOIKE , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号: H01L23/48
CPC分类号: H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译: 通过改变半导体器件的结构,安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上,第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果,用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影,并可以将安装时的布线布局设置为最小路线。
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公开(公告)号:US08232629B2
公开(公告)日:2012-07-31
申请号:US11841955
申请日:2007-08-20
申请人: Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人: Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号: H01L23/495
CPC分类号: H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译: 通过改变半导体器件的结构,安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上,第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果,用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影,并可以将安装时的布线布局设置为最小路线。
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公开(公告)号:US09129979B2
公开(公告)日:2015-09-08
申请号:US13533391
申请日:2012-06-26
申请人: Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
发明人: Nobuya Koike , Atsushi Fujiki , Norio Kido , Yukihiro Sato , Hiroyuki Nakamura
IPC分类号: H01L23/48 , H01L21/56 , H01L23/495 , H01L23/00
CPC分类号: H01L21/565 , H01L23/49503 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/04042 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/32257 , H01L2224/40095 , H01L2224/40245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要: It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.
摘要翻译: 通过改变半导体器件的结构,安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上,第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果,用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影,并可以将安装时的布线布局设置为最小路线。
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公开(公告)号:US08299599B2
公开(公告)日:2012-10-30
申请号:US13040234
申请日:2011-03-03
申请人: Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
发明人: Hiroyuki Nakamura , Atsushi Fujiki , Tatsuhiro Seki , Nobuya Koike , Yukihiro Sato , Kisho Ashida
CPC分类号: H01L27/07 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/66 , H01L2224/02166 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.
摘要翻译: 提高半导体器件的性能和可靠性。 对于半导体芯片CP1,用于开关的功率MOSFET Q1和Q2,用于检测功率MOSFET Q1的发热的二极管DD1,用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中,功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置,二极管DD2沿着侧面SD2配置,除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。
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公开(公告)号:US20130082334A1
公开(公告)日:2013-04-04
申请号:US13610935
申请日:2012-09-12
IPC分类号: H01L27/088
CPC分类号: H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译: 提高了半导体器件的可靠性。 用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小,形成在一个半导体芯片中。 半导体芯片通过导电接合材料安装在芯片安装部分上,并密封在树脂中。 在半导体芯片的主表面上,金属板被接合到功率MOSFET的源极焊盘电极。 在平面图中,金属板不与形成感测MOSFET的感测MOSFET区域重叠。 金属板与源极焊盘电极接合,以便围绕感测MOSFET区域的三个侧面。
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公开(公告)号:US08624379B2
公开(公告)日:2014-01-07
申请号:US13610935
申请日:2012-09-12
IPC分类号: H01L23/52
CPC分类号: H01L27/088 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01015 , H01L2924/01047 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.
摘要翻译: 提高了半导体器件的可靠性。 用于感测在功率MOSFET中流过的电流的开关功率MOSFET和感测MOSFET的面积比功率MOSFET小,形成在一个半导体芯片中。 半导体芯片通过导电接合材料安装在芯片安装部分上,并密封在树脂中。 在半导体芯片的主表面上,金属板被结合到功率MOSFET的源极焊盘电极。 在平面图中,金属板不与形成感测MOSFET的感测MOSFET区域重叠。 金属板与源极焊盘电极接合,以便围绕感测MOSFET区域的三个侧面。
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公开(公告)号:US20090215230A1
公开(公告)日:2009-08-27
申请号:US12358387
申请日:2009-01-23
申请人: Akira MUTO , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
发明人: Akira MUTO , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
IPC分类号: H01L21/56
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/433 , H01L23/4334 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/83 , H01L25/115 , H01L25/117 , H01L2224/26145 , H01L2224/26175 , H01L2224/27013 , H01L2224/29101 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32014 , H01L2224/32245 , H01L2224/33181 , H01L2224/40247 , H01L2224/4899 , H01L2224/73263 , H01L2224/83051 , H01L2224/83101 , H01L2224/83139 , H01L2224/83192 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/83855 , H01L2224/83862 , H01L2224/83885 , H01L2224/84801 , H01L2224/8485 , H01L2225/1029 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/16195 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/07025 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099 , H01L2224/37599
摘要: The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminal 3 and gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.
摘要翻译: 提高树脂密封半导体封装的放射性能,进一步提高其制造成品率。 耦合到半导体芯片的背表面漏电极的漏极端子在封装树脂部分的背面露出。 以下部分和端子的一部分暴露在封装树脂部分的顶表面处:耦合到半导体芯片的源极焊盘电极的源极端子的第一部分和耦合到半导体芯片的栅极焊盘电极的栅极端子 。 源极端子和栅极端子的第二部分的剩余部分在封装树脂部分的背面露出。 当制造该半导体器件时,将接合材料和膜构件放置在漏极端子和半导体芯片之间。 同时,在源极端子3和栅极端子与半导体芯片之间放置糊状结合材料和膜部件。 糊状接合材料固化并变成粘结材料。 作为使用膜构件的结果,抑制了接合材料的厚度的变化。
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公开(公告)号:US08114710B2
公开(公告)日:2012-02-14
申请号:US12358387
申请日:2009-01-23
申请人: Akira Muto , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
发明人: Akira Muto , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
IPC分类号: H01L21/00
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/433 , H01L23/4334 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/83 , H01L25/115 , H01L25/117 , H01L2224/26145 , H01L2224/26175 , H01L2224/27013 , H01L2224/29101 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32014 , H01L2224/32245 , H01L2224/33181 , H01L2224/40247 , H01L2224/4899 , H01L2224/73263 , H01L2224/83051 , H01L2224/83101 , H01L2224/83139 , H01L2224/83192 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/83855 , H01L2224/83862 , H01L2224/83885 , H01L2224/84801 , H01L2224/8485 , H01L2225/1029 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/16195 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/07025 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099 , H01L2224/37599
摘要: The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminal 3 and gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.
摘要翻译: 提高树脂密封半导体封装的放射性能,进一步提高其制造成品率。 耦合到半导体芯片的背表面漏电极的漏极端子在封装树脂部分的背面露出。 以下部分和端子的一部分暴露在封装树脂部分的顶表面处:耦合到半导体芯片的源极焊盘电极的源极端子的第一部分和耦合到半导体芯片的栅极焊盘电极的栅极端子 。 源极端子和栅极端子的第二部分的剩余部分在封装树脂部分的背面露出。 当制造该半导体器件时,将接合材料和膜构件放置在漏极端子和半导体芯片之间。 同时,在源极端子3和栅极端子与半导体芯片之间放置糊状结合材料和膜部件。 糊状接合材料固化并变成粘结材料。 作为使用膜构件的结果,抑制了接合材料的厚度的变化。
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公开(公告)号:US09024423B2
公开(公告)日:2015-05-05
申请号:US12767071
申请日:2010-04-26
申请人: Akira Muto , Yuichi Machida , Nobuya Koike , Atsushi Fujiki , Masaki Tamura
发明人: Akira Muto , Yuichi Machida , Nobuya Koike , Atsushi Fujiki , Masaki Tamura
IPC分类号: H01L23/02 , H01L25/07 , H01L23/495 , H01L21/56 , H01L23/31
CPC分类号: H01L25/074 , H01L21/565 , H01L23/3107 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L2224/32245 , H01L2224/33181 , H01L2224/73253 , H01L2924/13091
摘要: A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with a gate pad electrode of the lower semiconductor chip in a plan view. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other. Accordingly, the size of a semiconductor device can be reduced.
摘要翻译: 一种半导体芯片,其中功率MOSFET被放置在其上形成另一功率MOSFET的半导体芯片之上,并且它们用封装树脂密封。 半导体芯片布置成使得上半导体芯片在平面图中不与下半导体芯片的栅极焊盘电极重叠。 半导体芯片的尺寸相同,并且下半导体芯片和上半导体芯片的各个源极焊盘电极和栅极焊盘电极的形状和布置相同。 下半导体芯片和上半导体芯片被布置成它们各自的中心彼此偏离。 因此,可以减小半导体器件的尺寸。
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公开(公告)号:US20070138566A1
公开(公告)日:2007-06-21
申请号:US11610704
申请日:2006-12-14
IPC分类号: H01L29/94 , H01L21/8238
CPC分类号: H01L29/66666 , H01L21/823412 , H01L21/82345 , H01L21/823487 , H01L27/0248 , H01L27/088 , H01L29/1087 , H01L29/66659 , H01L29/66696 , H01L29/66704 , H01L29/7813 , H01L29/7815 , H01L29/7835
摘要: A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate are provided. The power MOSFET is a trench gate vertical type P-channel MOSFET and the conduction type of the gate electrode is assumed to be P-type. The protection circuit includes a planar gate horizontal type offset P-channel MOSFET and the conduction type of the gate electrode is assumed to be N-type. These gate electrode and gate electrode are formed in separate steps.
摘要翻译: 提供了组合可靠性和电气特性保证的半导体器件。 提供了形成在同一半导体衬底上的功率MOSFET和保护电路。 功率MOSFET是沟槽栅极垂直型P沟道MOSFET,并且栅极电极的导通类型被假定为P型。 保护电路包括平面栅极水平型偏移P沟道MOSFET,并且假定栅极电极的导电类型为N型。 这些栅电极和栅电极分开形成。
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