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    Electrode tuning method and apparatus for a layered heater structure
    4.
    发明授权
    Electrode tuning method and apparatus for a layered heater structure 有权
    用于层状加热器结构的电极调谐方法和装置

    公开(公告)号：US07777160B2

    公开(公告)日：2010-08-17

    申请号：US12002381

    申请日：2007-12-17

    申请人： Wei Fan ,  Benjamin J. Olechnowicz ,  Marc Schaepkens ,  David M. Rusinko, Jr. ,  Xiang Liu ,  John T. Mariner

    发明人： Wei Fan ,  Benjamin J. Olechnowicz ,  Marc Schaepkens ,  David M. Rusinko, Jr. ,  Xiang Liu ,  John T. Mariner

    IPC分类号： H05B3/68 ,  C23C16/00

    CPC分类号： H01L21/68735 ,  H01L21/67103 ,  H05B3/143

    摘要： A layered heater structure including an electrode layer and a localized tuning method for tuning the electrode layer of a layered heater structure with high precision is provided. The localized tuning method tunes the electrode layer to its proper local resistance to minimize temperature offsets on the heater surface and thus provide a desired thermal profile that is in marked contrast to conventional, non-localized resistance tuning approaches based on thickness trimming practices, such as grinding or blasting, or resistivity adjustment, such as local heat treatment.

    摘要翻译： 提供了包括电极层和用于高精度地调谐层状加热器结构的电极层的局部调谐方法的层状加热器结构。 局部调谐方法将电极层调整到其适当的局部电阻以最小化加热器表面上的温度偏移，并因此提供期望的热分布，其与基于厚度修整实践的常规非局部电阻调谐方法形成鲜明对比，例如 研磨或爆破，或电阻率调整，如局部热处理。

    WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY
    5.
    发明申请
    WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY 有权
    具有可调节电阻率的加工装置

    公开(公告)号：US20100053841A1

    公开(公告)日：2010-03-04

    申请号：US12204079

    申请日：2008-09-04

    申请人： David Michael Rusinko, JR. ,  Marc Schaepkens ,  Wanxue Zeng

    发明人： David Michael Rusinko, JR. ,  Marc Schaepkens ,  Wanxue Zeng

    IPC分类号： H01L21/683

    CPC分类号： H01L21/683 ,  H01L21/6831 ,  H01L21/6833

    摘要： An article with an etch resistant coating is disclosed. The article is a heating element, wafer carrier, or electrostatic chuck. The article has a base substrate made of a ceramic or other material, and further has one or more electrodes for resistance heating or electromagnetic chucking or both. The eth resistant coating has a plurality of regions made from materials having different electrical volume resistivities, such that the overall coating has a bulk resistivity that can be tailored by varying the relative size of each region.

    摘要翻译： 公开了具有耐蚀刻涂层的物品。 该物品是加热元件，晶片载体或静电卡盘。 该制品具有由陶瓷或其他材料制成的基底，并且还具有用于电阻加热或电磁夹持的两个或更多个电极。 耐腐蚀涂层具有由具有不同电体积电阻率的材料制成的多个区域，使得整个涂层具有可以通过改变每个区域的相对尺寸来调整的体电阻率。

    COATING COMPOSITION, ARTICLE, AND ASSOCIATED METHOD
    7.
    发明申请
    COATING COMPOSITION, ARTICLE, AND ASSOCIATED METHOD 审中-公开
    涂料组合物，制品及相关方法

    公开(公告)号：US20080009417A1

    公开(公告)日：2008-01-10

    申请号：US11560953

    申请日：2006-11-17

    申请人： Victor Lienkong Lou ,  George Theodore Dalakos ,  Marc Schaepkens

    发明人： Victor Lienkong Lou ,  George Theodore Dalakos ,  Marc Schaepkens

    IPC分类号： H01L39/24

    CPC分类号： H01L21/68757 ,  C03C3/062 ,  C03C3/095 ,  C03C4/20

    摘要： A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has protective coating structure that includes a glassy material. The glassy material includes at least one of yttrium, cerium, or gadolinium; and aluminum and silicon. The coating composition resists etching by a harsh environment.

    摘要翻译： 提供一种用于在25-1500℃的温度范围内的腐蚀性操作环境中的加工设备。 该装置具有包括玻璃状材料的保护涂层结构。 玻璃状材料包括钇，铈或钆中的至少一种; 和铝和硅。 涂料组合物可以抵抗恶劣环境的蚀刻。

    Encapsulated wafer processing device and process for making thereof
    10.
    发明申请
    Encapsulated wafer processing device and process for making thereof 审中-公开
    封装晶片处理装置及其制造方法

    公开(公告)号：US20060096946A1

    公开(公告)日：2006-05-11

    申请号：US11262279

    申请日：2005-10-28

    申请人： Marc Schaepkens ,  Takayuki Togawa

    发明人： Marc Schaepkens ,  Takayuki Togawa

    IPC分类号： H01B13/00 ,  C23C16/00 ,  C23F1/00

    CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

    摘要： A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate and at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof, forming a substantially planar surface. The substantially planar surface is then coated with at least a semiconducting layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and/or combinations thereof.

    摘要翻译： 一种晶片处理装置，用于半导体晶片处理应用中，作为包含石墨基片和至少一个电极图案的静电卡盘（ESC），其中电极图案中的凹槽填充有绝缘或半导体材料，绝缘或半导体材料选自 B，Al，Si，Ga，难熔硬金属，过渡金属和稀土金属，或其复合物和/或其组合，形成基本平坦的表面。 然后用至少一个半导体层涂覆基本平坦的表面，该半导体层包括选自由B，Al，Si，Ga，耐火硬金属，过渡金属和过渡金属组成的组中的元素的氮化物，碳化物，碳氮化物或氮氧化物中的至少一种 稀土金属或其配合物和/或其组合。