公开(公告)号：US20130168982A1

公开(公告)日：2013-07-04

申请号：US13821071

申请日：2011-09-30

申请人： Hotaka Ashiya ,  Kazumi Hisajima ,  Teruaki Aoki ,  Takuji Kugaya ,  Takahide Ishida ,  Kunji Nagae ,  Daisuke Oiki ,  Tarou Ikeda ,  Masaru Tsuruta ,  Yasuo Yotsunaga ,  Shunsuke Ehara ,  Norimasa Mizutani ,  Sylvain David ,  Nobuhiro Iwai

发明人： Hotaka Ashiya ,  Kazumi Hisajima ,  Teruaki Aoki ,  Takuji Kugaya ,  Takahide Ishida ,  Kunji Nagae ,  Daisuke Oiki ,  Tarou Ikeda ,  Masaru Tsuruta ,  Yasuo Yotsunaga ,  Shunsuke Ehara ,  Norimasa Mizutani ,  Sylvain David ,  Nobuhiro Iwai

IPC分类号： B60R19/18

CPC分类号： B60R19/18 ,  B60R2019/1873

摘要： A bumper absorber (9) has a squared U-shaped cross section formed of: a vertical face (11) extending in a top-bottom direction and a vehicle width direction, and a top face (12) and a bottom face (13) respectively extending rearward from a top end and a bottom end of the vertical face (11). The bumper absorber (9) is configured such that the top face (12) and the bottom face (13) thereof are supported by the bumper reinforcement (10) via multiple attachment members (23 to 27), and an interval between the attachment members adjacent to each other in the vehicle width direction is set to decrease from end portions (9b) in the vehicle width direction toward a central portion (9a) in the vehicle width direction.

摘要翻译： 保险杠吸收器（9）具有由下列方式形成的平坦的U形横截面：沿上下方向和车辆宽度方向延伸的垂直面（11），以及顶面（12）和底面（13）， 分别从垂直面（11）的顶端和底端向后延伸。 保险杠吸收器（9）构造成使得顶面（12）和底面（13）经由多个附接构件（23至27）由保险杠加强件（10）支撑，并且附接构件 在车宽方向上彼此相邻地设定为从车宽方向的端部（9b）向车宽方向的中央部（9a）减小。

公开(公告)号：US08939479B2

公开(公告)日：2015-01-27

申请号：US13821071

申请日：2011-09-30

申请人： Hotaka Ashiya ,  Kazumi Hisajima ,  Teruaki Aoki ,  Takuji Kugaya ,  Takahide Ishida ,  Kunji Nagae ,  Daisuke Oiki ,  Tarou Ikeda ,  Masaru Tsuruta ,  Yasuo Yotsunaga ,  Shunsuke Ehara ,  Norimasa Mizutani ,  Sylvain David ,  Nobuhiro Iwai

发明人： Hotaka Ashiya ,  Kazumi Hisajima ,  Teruaki Aoki ,  Takuji Kugaya ,  Takahide Ishida ,  Kunji Nagae ,  Daisuke Oiki ,  Tarou Ikeda ,  Masaru Tsuruta ,  Yasuo Yotsunaga ,  Shunsuke Ehara ,  Norimasa Mizutani ,  Sylvain David ,  Nobuhiro Iwai

IPC分类号： B60R19/18

CPC分类号： B60R19/18 ,  B60R2019/1873

摘要： A bumper absorber (9) has a squared U-shaped cross section formed of: a vertical face (11) extending in a top-bottom direction and a vehicle width direction, and a top face (12) and a bottom face (13) respectively extending rearward from a top end and a bottom end of the vertical face (11). The bumper absorber (9) is configured such that the top face (12) and the bottom face (13) thereof are supported by the bumper reinforcement (10) via multiple attachment members (23 to 27), and an interval between the attachment members adjacent to each other in the vehicle width direction is set to decrease from end portions (9b) in the vehicle width direction toward a central portion (9a) in the vehicle width direction.

摘要翻译： 保险杠吸收器（9）具有由下列方式形成的平坦的U形横截面：沿上下方向和车辆宽度方向延伸的垂直面（11），以及顶面（12）和底面（13）， 分别从垂直面（11）的顶端和底端向后延伸。 保险杠吸收器（9）构造成使得顶面（12）和底面（13）经由多个附接构件（23至27）由保险杠加强件（10）支撑，并且附接构件 在车宽方向上彼此相邻地设定为从车宽方向的端部（9b）向车宽方向的中央部（9a）减小。

公开(公告)号：US4084986A

公开(公告)日：1978-04-18

申请号：US678061

申请日：1976-04-19

申请人： Teruaki Aoki ,  Takeshi Matsushita ,  Tadayoshi Mifune ,  Hisao Hayashi

发明人： Teruaki Aoki ,  Takeshi Matsushita ,  Tadayoshi Mifune ,  Hisao Hayashi

IPC分类号： H01L27/04 ,  H01L21/00 ,  H01L21/265 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/329 ,  H01L21/331 ,  H01L21/76 ,  H01L21/822 ,  H01L23/29 ,  H01L23/31 ,  H01L29/73 ,  H01L29/78 ,  H01L29/8605 ,  H01L21/26

CPC分类号： H01L29/8605 ,  H01L21/00 ,  H01L21/26506 ,  H01L21/314 ,  H01L21/31654 ,  H01L21/3185 ,  H01L23/291 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S148/061 ,  Y10S148/085 ,  Y10S148/112 ,  Y10S148/114 ,  Y10S438/958

摘要： An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.

摘要翻译： 将氧或氮离子束注入到半导体衬底上的多晶硅或非晶硅层或单晶器件主体或层中，至足以转换多晶硅层，非晶层或单晶 器件本体或层变成具有107至1011欧姆 - 厘米电阻率的半绝缘层，其具有改善的钝化性能。

公开(公告)号：US4067100A

公开(公告)日：1978-01-10

申请号：US718339

申请日：1976-08-27

申请人： Akira Kojima ,  Teruaki Aoki ,  Norio Suzuki

发明人： Akira Kojima ,  Teruaki Aoki ,  Norio Suzuki

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L21/329 ,  H01L21/331 ,  B01J17/00

CPC分类号： H01L21/32136 ,  H01L21/033 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32134

摘要： A method of making a semiconductor device which has sharp corners on an upper surface and wherein a passivation layer is formed over said surface and windows are formed in the passivation layer for the attaching and formation of electrodes in which a photoresist material is placed over the passivation layer and selectively removed so as to leave areas of photoresist at locations over said passivation layer wherein electrodes are to be formed after which a layer of metal is formed over the surface and the metal and photoresist is removed at those portions where the photoresist layer remained after which passivation the area is etched through the windows in the metal layer and the metal layer is then removed and the electrodes are formed in the windows.

摘要翻译： 一种制造半导体器件的方法，其在上表面上具有尖角，并且其中在所述表面上形成钝化层，并且在钝化层中形成窗口，用于附着和形成其中光致抗蚀剂材料放置在钝化层上的电极 并且选择性地去除，以便在所述钝化层上方的位置处留下光致抗蚀剂的区域，其中将形成电极，之后在该表面上形成金属层，并且在光致抗蚀剂层留下的那些部分去除金属和光致抗蚀剂 通过金属层中的窗口蚀刻该区域的钝化，然后去除金属层，并且在窗口中形成电极。

公开(公告)号：US4001762A

公开(公告)日：1977-01-04

申请号：US582618

申请日：1975-06-02

申请人： Teruaki Aoki ,  Hisayoshi Yamoto ,  Masanori Okayama ,  Yoshimi Hirata ,  Shuichi Sato ,  Takaaki Yamada

发明人： Teruaki Aoki ,  Hisayoshi Yamoto ,  Masanori Okayama ,  Yoshimi Hirata ,  Shuichi Sato ,  Takaaki Yamada

IPC分类号： C01B33/02 ,  H01B1/04 ,  H01C7/00 ,  H01L21/02 ,  H01L21/208 ,  H01L21/822 ,  H01L27/04 ,  H01L29/00 ,  H01C1/012

CPC分类号： H01L28/20 ,  H01C7/006 ,  H01L29/00 ,  Y10S438/934

摘要： A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

公开(公告)号：US4114254A

公开(公告)日：1978-09-19

申请号：US669326

申请日：1976-03-22

申请人： Teruaki Aoki ,  Motoaki Abe

发明人： Teruaki Aoki ,  Motoaki Abe

IPC分类号： H01L29/78 ,  H01L21/00 ,  H01L21/316 ,  H01L21/331 ,  H01L21/336 ,  H01L29/00 ,  H01L29/73 ,  B01J17/00

CPC分类号： H01L21/316 ,  H01L21/00 ,  H01L29/00 ,  Y10S257/905 ,  Y10S438/911 ,  Y10S438/945

摘要： A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms.The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer.The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.

摘要翻译： 公开了一种半导体器件及其制造方法，其具有含有2至45原子％氧原子的多晶硅层的表面钝化膜。

公开(公告)号：US4063275A

公开(公告)日：1977-12-13

申请号：US624889

申请日：1975-10-22

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hidenobu Mochizuki

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hidenobu Mochizuki

IPC分类号： H01L21/322 ,  H01L21/314 ,  H01L21/331 ,  H01L21/8247 ,  H01L23/31 ,  H01L29/06 ,  H01L29/73 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/861 ,  H01L29/04 ,  H01L23/30

CPC分类号： H01L23/3192 ,  H01L21/314 ,  H01L23/3157 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/3025 ,  Y10S257/905

摘要： A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.

摘要翻译： 提供了包括单晶衬底的半导体器件。 布置在基板的一个表面上的第一绝缘层是含氧的多晶硅。 形成在第一绝缘层上的第二绝缘层是由氮，Si 3 N 4，Al 2 O 3和有机硅树脂组成的组中的一种的多晶硅。 衬底包括延伸到衬底的所述表面的至少一个PN结。 还公开了一种新颖的制造方法。

公开(公告)号：US4062707A

公开(公告)日：1977-12-13

申请号：US654598

申请日：1976-02-02

申请人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

发明人： Hidenobu Mochizuki ,  Teruaki Aoki ,  Takeshi Matsushita ,  Hisao Hayashi ,  Masanori Okayama

IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/314 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00 ,  H01L21/31

CPC分类号： H01L23/291 ,  H01L21/033 ,  H01L21/314 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/13091 ,  Y10S438/945

摘要： A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成含有氧原子的第一多晶硅层，在第一多晶硅层上形成含氮原子的第二多晶硅层，去除第一多晶硅层的预定部分 和第二多晶硅层，以在其中形成开口，并且通过开口将杂质材料扩散到半导体层中，以形成扩散区域。 制造工艺可以非常简化。

公开(公告)号：US5555898A

公开(公告)日：1996-09-17

申请号：US311918

申请日：1994-09-26

申请人： Yutaka Suzuki ,  Hideyuki Kashiwagi ,  Teruaki Aoki ,  Fumiichi Koshino ,  George J. Picha ,  Anthony J. Szpak

发明人： Yutaka Suzuki ,  Hideyuki Kashiwagi ,  Teruaki Aoki ,  Fumiichi Koshino ,  George J. Picha ,  Anthony J. Szpak

IPC分类号： A61B17/34 ,  A61J15/00 ,  A61B19/00

CPC分类号： A61J15/0019 ,  A61B17/3415 ,  A61B17/3417 ,  A61J15/0023 ,  A61J15/0034 ,  A61J15/0061

摘要： A gastric access device having an external bolster and a tubular body. The tubular body has an integral bolster portion at one end and an integral dilator portion at an opposite end. An incision extending from an external body surface to an internal body cavity is formed and the gastric access device is inserted through the incision such that the bolster portion is in contact with an inner body surface surrounding the internal body cavity, the tubular body lies within and projects outwardly from the incision, and the dilator portion is on the outside or exterior of the body. The external bolster is slid or pushed down over the dilator portion and the projecting portion of the tubular body and into contact with the external surface of the body. The projecting portion of the tubular body is clamped and subsequently severed to disconnect the dilator portion from the tubular body. Thereafter, air flow control devices may be inserted into the tubular body, and surgical tools inserted through the tubular body and into the internal body cavity. The surgical tools are manipulated by the surgeon to perform surgical procedures on the tissue within the internal body cavity.

摘要翻译： 具有外部枕头和管状体的胃进入装置。 管状体在一端具有整体式的摇枕部分，在另一端具有整体的扩张器部分。 形成从外部身体表面延伸到内部体腔的切口，并且胃进入装置通过切口插入，使得垫子部分与围绕内部体腔的内部体表面接触， 从切口向外突出，并且扩张器部分在身体的外部或外部。 外部枕头在管状体的扩张器部分和突出部分上滑动或向下滑动并与身体的外表面接触。 管状体的突出部分被夹紧并随后被切断以将扩张器部分与管状体断开。 此后，可以将气流控制装置插入到管状体中，并且将手术工具插入管状体并进入内部体腔。 手术工具由外科医生操纵以在内部体腔内的组织上执行外科手术。

公开(公告)号：US4014037A

公开(公告)日：1977-03-22

申请号：US561532

申请日：1975-03-24

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

IPC分类号： H01L29/73 ,  G02B6/12 ,  H01L21/283 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L27/04 ,  H01L29/78 ,  H01L29/861 ,  H01L29/34

CPC分类号： H01L21/314 ,  H01L2924/0002 ,  Y10S257/905

摘要： A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.