公开(公告)号：US11362061B2

公开(公告)日：2022-06-14

申请号：US16906387

申请日：2020-06-19

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Lin Hou ,  Jaber Derakhshandeh ,  Eric Beyne ,  Ingrid De Wolf ,  Giovanni Capuz

IPC: H01L23/00

Abstract: A method is disclosed for electrically bonding a first semiconductor component to a second semiconductor component, both components including arrays of contact areas. In one aspect, prior to bonding, layers of an intermetallic compound are formed on the contact areas of the second component. The roughness of the intermetallic layers is such that the intermetallic layers include cavities suitable for insertion of a solder material in the cavities, under the application of a bonding pressure, when the solder is at a temperature below its melting temperature. The components are aligned and bonded, while the solder material is applied between the two. Bonding takes place at a temperature below the melting temperature of the solder. The bond can be established only by the insertion of the solder into the cavities of the intermetallic layers, and without the formation of a second intermetallic layer.

公开(公告)号：US20200075431A1

公开(公告)日：2020-03-05

申请号：US16120061

申请日：2018-08-31

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Kristof J.P. Jacobs ,  Ingrid De Wolf

IPC: H01L21/66 ,  H01L23/48

Abstract: The disclosed technology generally relates to semiconductor characterization, and more particularly to detecting manufacturing defects in semiconductor regions. In one aspect, a non-destructive method of detecting a manufacturing defect in a semiconductor device includes providing a semiconductor device comprising an electrically isolated conductive via formed in a semiconductor region. The method additionally includes locally heating to cause a temperature change in a volume of the semiconductor region from a first temperature to a second temperature. The method additionally includes applying an electrical bias between the conductive via and the semiconductor region to form a temperature-dependent depletion region in the semiconductor region. The method additionally includes measuring a first capacitance value and a second capacitance value between the conductive via and the semiconductor region corresponding to the first temperature and the second temperature, respectively, of the volume of the semiconductor region. The method further includes detecting the manufacturing defect based on a difference between the first capacitance value and the second capacitance value.

公开(公告)号：US20170186733A1

公开(公告)日：2017-06-29

申请号：US15457744

申请日：2017-03-13

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00 ,  H01L23/528

CPC classification number: H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US20170005018A1

公开(公告)日：2017-01-05

申请号：US15193383

申请日：2016-06-27

Applicant: IMEC vzw

Inventor： Ingrid De Wolf ,  Murali Jayapala ,  Arnita Podpod ,  John Slabbekoorn ,  Carolina Blanch Perez del Notario

IPC: H01L21/66 ,  G05B19/418 ,  H01L21/677 ,  H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  G06T7/00 ,  H01L21/67

CPC classification number: H01L22/20 ,  G01N21/00 ,  G01N21/31 ,  G05B19/418 ,  G05B2219/45031 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148 ,  H01L21/02076 ,  H01L21/6835 ,  H01L21/6836 ,  H01L22/12 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/1181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/83193 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2224/27 ,  H01L2224/11

Abstract: A method for inspection of a semiconductor device is disclosed. In one aspect, the method includes performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device. The method also includes capturing an image on a two-dimensional image sensor of an area of at least part of the semiconductor device, wherein the captured image comprises spectral information for a plurality of positions in the area, and wherein the spectral information comprises intensity of incident electro-magnetic radiation for a plurality of different wavelength bands across a spectrum of wavelengths. The method also includes processing the spectral information of the captured image for each of the plurality of positions to determine whether residue of the compound is present in the position. The method also includes outputting information indicating positions for which residue of the compound is present for controlling a subsequent processing step in manufacturing of the semiconductor device.

Abstract translation: 公开了一种用于检查半导体器件的方法。 一方面，该方法包括在半导体器件的制造中执行处理步骤，其中化合物至少与半导体器件接触。 该方法还包括在半导体器件的至少一部分的区域的二维图像传感器上捕获图像，其中所捕获的图像包括用于该区域中的多个位置的光谱信息，并且其中光谱信息包括 在波长范围内的多个不同波长带的入射电磁辐射。 该方法还包括处理多个位置中的每一个的捕获图像的光谱信息，以确定化合物的残留物是否存在于该位置。 该方法还包括输出指示化合物的残留物的位置的信息，以控制半导体器件的制造中的后续处理步骤。

公开(公告)号：US10777471B2

公开(公告)日：2020-09-15

申请号：US16120061

申请日：2018-08-31

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Kristof J. P. Jacobs ,  Ingrid De Wolf

IPC: H01L21/66 ,  H01L23/48 ,  G01N29/04 ,  H01L27/06

Abstract: The disclosed technology generally relates to semiconductor characterization, and more particularly to detecting manufacturing defects in semiconductor regions. In one aspect, a non-destructive method of detecting a manufacturing defect in a semiconductor device includes providing a semiconductor device comprising an electrically isolated conductive via formed in a semiconductor region. The method additionally includes locally heating to cause a temperature change in a volume of the semiconductor region from a first temperature to a second temperature. The method additionally includes applying an electrical bias between the conductive via and the semiconductor region to form a temperature-dependent depletion region in the semiconductor region. The method additionally includes measuring a first capacitance value and a second capacitance value between the conductive via and the semiconductor region corresponding to the first temperature and the second temperature, respectively, of the volume of the semiconductor region. The method further includes detecting the manufacturing defect based on a difference between the first capacitance value and the second capacitance value.

公开(公告)号：US09799632B2

公开(公告)日：2017-10-24

申请号：US15457744

申请日：2017-03-13

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC: H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US09601459B2

公开(公告)日：2017-03-21

申请号：US14576637

申请日：2014-12-19

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC: H01L29/80 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

公开(公告)号：US20150179605A1

公开(公告)日：2015-06-25

申请号：US14576637

申请日：2014-12-19

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Vikas Dubey ,  Ingrid De Wolf ,  Eric Beyne

IPC: H01L23/00

CPC classification number: H01L25/0657 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/33 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0213 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0218 ,  H01L2224/02185 ,  H01L2224/0224 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/0903 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/80004 ,  H01L2224/80007 ,  H01L2224/80121 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80203 ,  H01L2224/80894 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83143 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

Abstract translation: 第一微电子部件与第二微电子部件的接收表面的对准通过与静电取向相结合的毛细管力诱导的自对准来实现。 后者通过沿着第一部件的周边提供至少一个第一电导体线，以及沿着第二部件的接收表面上的位置的周边的至少一个第二电导体，部件将放置在其上 。 由导体线包围的接触区域被润湿层覆盖。 电导体线可以嵌入沿着周边延伸的防湿材料条，以产生润湿性对比度。 润湿性对比度有助于保持接触区域之间的取向液滴，从而通过毛细管力获得自对准。 通过在导体线上施加适当的电荷，实现静电自对准，这改善了通过毛细管力获得的对准并且在液体的蒸发期间保持对准。