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公开(公告)号:US20190042358A1
公开(公告)日:2019-02-07
申请号:US15890204
申请日:2018-02-06
Applicant: Intel Corporation
Inventor: Kjersten E. CRISS , Wei WU
Abstract: Examples include techniques for implementing read and write operations between a memory controller and a memory device. In an embodiment, the memory controller is configured to receive data bits to write to the memory device, to determine, using a memory controller ECC component and the data bits, a plurality of memory controller ECC check bits and one or more parity bits, to append the memory controller ECC check bits and the one or more parity bits to the data bits, and to send the data bits, the memory controller ECC check bits, and the one or more parity bits to the memory device during a write operation. In an embodiment, the memory controller is configured to receive the data bits and the memory controller ECC check bits from the memory device, to check the data bits against the memory controller ECC check bits and correct errors detected, and to return the data bits during a read operation.
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公开(公告)号:US20180090201A1
公开(公告)日:2018-03-29
申请号:US15276588
申请日:2016-09-26
Applicant: INTEL CORPORATION
Inventor: Wei WU , Jawad B. KHAN , Sanjeev N. TRIKA , Yi ZOU
CPC classification number: G11C11/5628 , G06F11/1044 , G06F11/1072 , G11C11/5642 , G11C16/0483 , G11C16/3427 , G11C16/349 , G11C29/021 , G11C29/028 , G11C2029/0409
Abstract: Provided are a method and apparatus for programming non-volatile memory using a multi-cell storage cell group to provide error location information for retention errors. Each storage cell in the non-volatile memory is programmed with threshold voltage levels and each storage cell is programmed from bits from a plurality of pages. A memory controller organizes the storage cells into storage cell groups, each storing m bits of information programmed with the threshold voltage levels. A determination is made of one threshold voltage level to use for each of the storage cells in the storage cell group to program a selected k bits in the storage cell group with threshold voltage levels defining one of a plurality of valid states. The threshold voltage levels for at least one of the storage cells of the storage cell group in any two valid states differ by at least two threshold voltage levels.
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公开(公告)号:US20190004909A1
公开(公告)日:2019-01-03
申请号:US15640182
申请日:2017-06-30
Applicant: Intel Corporation
Inventor: Hussein ALAMEER , Uksong KANG , Kjersten E. CRISS , Rajat AGARWAL , Wei WU , John B. HALBERT
IPC: G06F11/16 , H01L25/065 , G11C5/02 , G11C7/24
Abstract: A stacked memory chip device is described. The stacked memory chip device includes a plurality of stacked memory chips. The stacked memory chip device includes read/write logic circuitry to service read/write requests for cache lines kept within the plurality of stacked memory chips. The stacked memory chip device includes data protection circuitry to store information to protect substantive data of cache lines in the plurality of stacked memory chips, where, the information is kept in more than one of the plurality of stacked memory chips, and where, any subset of the information that protects respective substantive information of a particular one of the cache lines is not stored in a same memory chip with the respective substantive information.
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4.
公开(公告)号:US20180040367A1
公开(公告)日:2018-02-08
申请号:US15228699
申请日:2016-08-04
Applicant: INTEL CORPORATION
Inventor: Wei WU , Yi ZOU , Jawad B. KHAN , Xin GUO
CPC classification number: G11C11/5628 , G06F3/0608 , G06F3/0661 , G06F3/0688 , G11C7/1006 , G11C11/5642 , G11C16/10 , G11C2211/5641 , G11C2211/5648
Abstract: Provided are a method and apparatus for endurance friendly programming using lower voltage thresholds. A non-volatile memory has storage cells organized as pages programmed using a first number of threshold voltage levels. The storage cells are organized into storage cell groups to which data is written. Each storage cell group is programmed to store a first number of bits of information. A memory controller selects a second number of bits of information from pages less than the first number of bits of information. The memory controller programs the storage cells of the storage cell group using threshold voltage levels from a second number of threshold voltage levels, wherein the second number of threshold voltage levels is less than the first number of threshold voltage levels and comprises a lowest of the first number of threshold voltage levels.
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5.
公开(公告)号:US20180039429A1
公开(公告)日:2018-02-08
申请号:US15228729
申请日:2016-08-04
Applicant: INTEL CORPORATION
Inventor: Wei WU , Yi ZOU , Jawad B. KHAN , Xin GUO
IPC: G06F3/06 , G06F12/1009 , G11C11/56
CPC classification number: G06F3/0616 , G06F3/0644 , G06F3/0688 , G06F12/1009 , G06F2212/1036 , G06F2212/2022 , G06F2212/7201 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/10 , G11C2211/5641 , G11C2211/5648
Abstract: Provided are an apparatus, method, and system for programming a multi-cell storage cell group. A non-volatile memory has storage cells. Each storage cell is programmed with information using a plurality of threshold voltage levels and each storage cell is programmed from bits from a plurality of pages. A memory controller is configured to program the storage cells and to organize the storage cells in the non-volatile memory into storage cell groups. Each storage cell group stores a number of bits of information and each of the storage cells in each of the storage cell groups is programmed with the plurality of threshold voltage levels. The memory controller selects bits from the pages to write for one storage cell group and determines at least one threshold voltage level to use for each of the storage cells in the storage cell group to program the selected bits in the storage cell group.
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公开(公告)号:US20170178697A1
公开(公告)日:2017-06-22
申请号:US14975298
申请日:2015-12-18
Applicant: INTEL CORPORATION
Inventor: Wei WU , Shigeki TOMISHIMA , Shih-Lien L. LU
CPC classification number: G11C7/06 , G06F13/1678 , G06F13/4018 , G06F13/4282 , G11C7/1048 , G11C7/1072 , G11C11/40618 , G11C11/4091 , G11C11/4093 , G11C2207/105 , G11C2207/107
Abstract: Provided is memory device and a memory bank, comprising a global data bus, and a local data bus split into two parts, wherein the local data bus is configurable to direct signals to the global data bus. Provided also is a method in which signals are received in a local data bus that is split into two parts, and the signals are directed from the local data bus to the global data bus. Provided also is a computational device comprised of a processor and the memory device.
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公开(公告)号:US20170177526A1
公开(公告)日:2017-06-22
申请号:US14975305
申请日:2015-12-18
Applicant: INTEL CORPORATION
Inventor: Wei WU , Shigeki TOMISHIMA , Shih-Lien L. LU
IPC: G06F13/40 , G11C11/4093 , G06F13/16 , G11C11/4091
CPC classification number: G06F13/4022 , G06F13/1668 , G11C5/025 , G11C5/063 , G11C7/06 , G11C7/1048 , G11C11/4091 , G11C11/4093 , G11C2207/105 , G11C2207/107
Abstract: Provided are a memory device and a memory bank comprised of a local data bus, a segmented global data bus coupled to the local data bus, and a section select switch that is configurable to direct a signal from the local data bus to either end of the segmented global data bus. Provided also is a computational device comprising a processor and the memory device and optionally a display. Provided also is a method in which a signal is received from a local data bus, and a section select switch is configured to direct the signal from the local data bus to either end of a segmented global data bus.
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公开(公告)号:US20210294799A1
公开(公告)日:2021-09-23
申请号:US17341963
申请日:2021-06-08
Applicant: Intel Corporation
Inventor: Wei WU , Sourabh DONGAONKAR , Jawad B. KHAN
IPC: G06F16/2458 , G06F16/248 , G06F16/22 , G06N3/04
Abstract: Methods and apparatus for sparse column-aware encodings for numeric data types, including integer data and floating-point data (float, double, etc.). The encoding schemes are tailored to take advantage of column addressable memories such as stochastic associative memories (SAM) to enable Stochastic Associative Search (SAS), which is a highly efficient and fast way of searching through a very large database of records (order of Billions) and finding similar records to a given query record (search key). Techniques are also disclosed for performing range searches for both integer and floating-point data types. The integer or float data is converted to Hexadecimal form and encoded using an m-of-n constant weight encoding. Only the columns with set bits in search keys need to be read, which significantly reduces the number of reads required for searches.
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公开(公告)号:US20190044536A1
公开(公告)日:2019-02-07
申请号:US16022631
申请日:2018-06-28
Applicant: Intel Corporation
Inventor: Jawad B. KHAN , Sanjeev N. TRIKA , Omesh Tickoo , Wei WU
CPC classification number: H03M13/05 , G06F11/1044 , G06F11/1048 , H03M13/611
Abstract: To address the storage needs of applications that work with noisy data (e.g. image, sound, video data), where errors can be tolerated to a certain extent and performance is more critical than data fidelity, dynamic reliability levels enable storage devices capable of storing and retrieving data with varying degrees of data fidelity to dynamically change the degree of data fidelity in response to an application's request specifying reliability level. By allowing the application to specify the reliability level at which its data is stored and retrieved, dynamic reliability levels can increase read/write performance without sacrificing application accuracy. The application can specify reliability levels for different types or units of data, such as different reliability levels for metadata as opposed to data and so forth.
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公开(公告)号:US20180218759A1
公开(公告)日:2018-08-02
申请号:US15940811
申请日:2018-03-29
Applicant: INTEL CORPORATION
Inventor: Wei WU , Shigeki TOMISHIMA , Shih-Lien L. LU
CPC classification number: G11C7/06 , G06F13/1678 , G06F13/4018 , G06F13/4282 , G11C7/1048 , G11C7/1072 , G11C11/40618 , G11C11/4091 , G11C11/4093 , G11C2207/105 , G11C2207/107
Abstract: Provided is memory device and a memory bank, comprising a global data bus, and a local data bus split into two parts, wherein the local data bus is configurable to direct signals to the global data bus. Provided also is a method in which signals are received in a local data bus that is split into two parts, and the signals are directed from the local data bus to the global data bus. Provided also is a computational device comprised of a processor and the memory device.
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