公开(公告)号：US20220375788A1

公开(公告)日：2022-11-24

申请号：US17817365

申请日：2022-08-04

Applicant: International Business Machines Corporation

Inventor： Andrew Greene ,  Ruilong Xie ,  Laertis Economikos ,  Veeraraghavan S. Basker ,  Chanro Park ,  Hui Zang

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.

公开(公告)号：US10388768B2

公开(公告)日：2019-08-20

申请号：US15815616

申请日：2017-11-16

Applicant: International Business Machines Corporation

Inventor： Miaomiao Wang ,  Tenko Yamashita ,  Chun-chen Yeh ,  Hui Zang

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/768 ,  H01L21/8234

Abstract: In a fin-Field Effect Transistor (finFET), a recess is created at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate. The recess is filled at least partially with a first conductive material. The first conductive material is insulated from the gate. The fin is replaced with a replacement structure. The replacement structure is electrically connected to the first conductive material using a second conductive material. the second conductive material is insulated from a first surface of the finFET. A first electrical contact structure is fabricated on the first surface. A second electrical contact structure is fabricated on a second surface of the finFET, the second surface being on a different spatial plane than the first surface.

公开(公告)号：US09853117B2

公开(公告)日：2017-12-26

申请号：US15342396

申请日：2016-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hyun-Jin Cho ,  Tenko Yamashita ,  Hui Zang

IPC: H01L29/51 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/28 ,  H01L27/12

CPC classification number: H01L29/512 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28088 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

公开(公告)号：US09741715B2

公开(公告)日：2017-08-22

申请号：US15179992

申请日：2016-06-11

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Balasubramanian Pranatharthiharan ,  Hui Zang

IPC: H01L21/70 ,  H01L27/088 ,  H01L27/11 ,  H01L29/16 ,  H01L29/06 ,  H01L21/304 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L27/1104 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/3043 ,  H01L21/324 ,  H01L21/76 ,  H01L21/76224 ,  H01L21/8221 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/1116 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a set of fin structures having a set of fin ends at a respective vertical surface of a fin structure and is separated by a set of trenches from other fin structures. Each of the fin structures has a top surface which is higher than a top surface of a dielectric material in the set of trenches. A set of dielectric blocks is disposed at the set of fin ends, the dielectric blocks having a top surface level with or above the top surfaces of the fin structures which inhibit excessive epitaxial growth at the fin ends.

公开(公告)号：US20170162582A1

公开(公告)日：2017-06-08

申请号：US15055571

申请日：2016-02-27

Applicant: International Business Machines Corporation ,  GlobalFoundries,Inc.

Inventor： Balasubramanian Pranatharthiharan ,  Hui Zang

IPC: H01L27/11 ,  H01L29/08 ,  H01L27/088

CPC classification number: H01L27/1104 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/26506 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1116 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for preventing epitaxial growth in a semiconductor device is described. The method includes cutting the fins of FinFET structure to form a set of exposed fin ends. A set of sidewall spacers are formed on the set of exposed fin ends, forming a set of spacer covered fin ends. The set of sidewall spacers prevent epitaxial growth at the set of spacer covered fin ends. A semiconductor device includes a set of fin structures having a set of fin ends. A set of inhibitory layers are disposed at the set of fin ends to inhibit excessive epitaxial growth at the fin ends.

公开(公告)号：US20170162451A1

公开(公告)日：2017-06-08

申请号：US15289158

申请日：2016-10-08

Applicant: International Business Machines Corporation ,  GlobalFoundries,Inc.

Inventor： Balasubramanian Pranatharthiharan ,  Hui Zang

IPC: H01L21/8238 ,  H01L27/11

CPC classification number: H01L27/1104 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/3043 ,  H01L21/324 ,  H01L21/76 ,  H01L21/76224 ,  H01L21/8221 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/1116 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure. Each of the set of fins has respective cut faces located at the fin ends of a set of fin ends. A photoresist layer is patterned over the set of fin ends on the set of fins of the FinFET structure. The set of fins are isolated from one another by a first dielectric material. The photoresist is patterned over the set of fin ends so that it differs from the photoresist pattern over other areas of the FinFET structure. A set of dielectric blocks is formed on the set of fin ends using the photoresist pattern. The set of dielectric blocks prevents epitaxial growth at the set of fin ends in a subsequent epitaxial growth step.

公开(公告)号：US09646885B1

公开(公告)日：2017-05-09

申请号：US15224091

申请日：2016-07-29

Applicant: International Business Machines Corporation ,  GlobalFoundries,Inc.

Inventor： Balasubramanian Pranatharthiharan ,  Hui Zang

IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/762 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3105 ,  H01L27/11 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/02

CPC classification number: H01L27/1104 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/26506 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/76 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1116 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for preventing epitaxial growth in a semiconductor device is described. The method cuts the fins of a FinFET structure to form a set of exposed fin ends. A plasma nitridation process is performed to the set of exposed fin ends. The plasma nitridation process forms a set of nitride layer covered fin ends. Dielectric material is deposited over the FinFET structure. The dielectric is etched to reveal sidewalls of the fins and the set of nitride layer covered fin ends. The nitride layer prevents epitaxial growth at the set of spacer covered fin ends.

公开(公告)号：US09613958B2

公开(公告)日：2017-04-04

申请号：US14735984

申请日：2015-06-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hyun-Jin Cho ,  Tenko Yamashita ,  Hui Zang

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/512 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28088 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

公开(公告)号：US20170077259A1

公开(公告)日：2017-03-16

申请号：US15363563

申请日：2016-11-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hyun-Jin Cho ,  Tenko Yamashita ,  Hui Zang

IPC: H01L29/51 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/512 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28088 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

Abstract translation: 一种形成用于半导体器件的栅极结构的方法，包括在存在于鳍状结构上的置换栅极结构的侧壁上形成第一间隔物，其中第一间隔物的上表面偏离替换栅极结构的上表面 并且在所述第一间隔物和所述替换栅极结构的所述暴露表面上形成至少第二间隔物。 该方法还可以包括用相邻的第一间隔件之间的第一空间中具有第一宽度部分的功能栅极结构代替替换栅极结构，以及在相邻的第二间隔物之间​​的第二空间中具有第二宽度的第二宽度部分，其中第二 宽度大于第一宽度。

公开(公告)号：US20170077099A1

公开(公告)日：2017-03-16

申请号：US15342396

申请日：2016-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hyun-Jin Cho ,  Tenko Yamashita ,  Hui Zang

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/512 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28088 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/845 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.