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111 条记录 (耗时 0.044 秒)

    Solenoid valve
    1.
    发明授权
    Solenoid valve 有权
    电磁阀

    公开(公告)号：US06969043B2

    公开(公告)日：2005-11-29

    申请号：US10398658

    申请日：2001-10-16

    申请人： Ichiro Hirata ,  Norio Uemura ,  Yoshinari Kasagi ,  Tadashi Yamaguchi

    发明人： Ichiro Hirata ,  Norio Uemura ,  Yoshinari Kasagi ,  Tadashi Yamaguchi

    IPC分类号： F16J15/02 ,  F16K31/06 ,  F16K31/02

    CPC分类号： F16K31/0613 ,  F16J15/024 ,  F16K31/0603 ,  F16K31/0668

    摘要： A substantially cylindrical annular space is formed by an outer circumferential surface of a cylindrical portion and a substantially flat surface portion of a substantially bottomed cylindrical sleeve, an inner circumferential surface of a case member, and a substantially flat surface portion of a bracket plate, a seal member being provided in this annular space. Thus, the simplification of the construction, and the miniaturization and the reduction of the weight is realized while a sealing performance between the inside and outside of the main body is maintained.

    摘要翻译： 大致圆筒状的环状空间由圆筒部的外周面和基本上为圆筒状的套筒的大致平坦的表面部分，壳体的内周面以及支架板的大致平坦的表面部分形成， 密封构件设置在该环形空间中。 因此，在保持主体内外的密封性能的同时，实现了构造的简化以及重量的小型化和减轻。

    Hollow core body for signal transmission cable
    2.
    发明授权
    Hollow core body for signal transmission cable 有权
    空心芯体用于信号传输电缆

    公开(公告)号：US09318238B2

    公开(公告)日：2016-04-19

    申请号：US14345053

    申请日：2011-10-04

    申请人： Tadashi Yamaguchi ,  Shigehiro Sasai

    发明人： Tadashi Yamaguchi ,  Shigehiro Sasai

    IPC分类号： H01B7/04 ,  H01B11/00 ,  H01B11/18 ,  H01B13/00

    CPC分类号： H01B7/04 ,  H01B11/00 ,  H01B11/1808 ,  H01B11/1856 ,  H01B13/0006

    摘要： A hollow core body for signal transmission cable comprises an inner conductor that employs a compressed bunched conductor formed by bunching and compressing plural strands such that a cross-section of the compressed bunched conductor is substantially circular, and a hollow insulating core that includes an inner annular member, rib members, an outer annular member, and hollow members. Accordingly, as almost no recesses are produced on the circumferential surface of the compressed bunched conductor, weakening of the mechanical strength due to presence of recesses on the circumferential surface of the inner conductor can be suppressed.

    摘要翻译： 用于信号传输电缆的中空芯体包括内导体，其使用通过聚束和压缩多股而形成的压缩聚束导体，使得压缩的聚束导体的横截面基本上为圆形，以及中空绝缘芯，其包括内环形 构件，肋构件，外环形构件和中空构件。 因此，由于在压缩的聚束导体的圆周表面上几乎没有产生凹陷，因此可以抑制由于在内导体的圆周表面上存在凹陷而导致的机械强度的弱化。

    Method for manufacture of a physical quantity detector
    4.
    发明授权
    Method for manufacture of a physical quantity detector 失效
    物理量检测器的制造方法

    公开(公告)号：US07708051B2

    公开(公告)日：2010-05-04

    申请号：US11657162

    申请日：2007-01-24

    申请人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

    发明人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

    IPC分类号： B22D17/00 ,  B22D33/04

    CPC分类号： G01L9/0051 ,  B22D15/02

    摘要： A physical quantity detector, such as a pressure sensor and a load sensor, includes a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part. The cylindrical part is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold includes a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part.

    摘要翻译： 诸如压力传感器和负载传感器的物理量检测器包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分。 通过熔化具有能够产生非晶合金的组成的合金材料，将所得熔融合金注入金属模具中，并且冷却金属模具中的熔融合金以赋予合金非晶性，从而制造圆柱形部分。 金属模具包括具有用于形成空腔的至少两个分开部分和插入空腔中的插入销以便限定圆柱形部件的内部构造的分开模具，或者还包括插入模具中的插入芯部 从而形成与应变发生部的表面对应的空腔的表面。

    Substrate Processing System, Method of Confirmation of Its State of Use, and Method of Prevention of Illicit Use
    5.
    发明申请
    Substrate Processing System, Method of Confirmation of Its State of Use, and Method of Prevention of Illicit Use 有权
    基板加工系统，确认其使用状态的方法和防止非法使用的方法

    公开(公告)号：US20070272151A1

    公开(公告)日：2007-11-29

    申请号：US11659878

    申请日：2005-08-10

    申请人： Hiroyuki Suzuki ,  Shinichi Okita ,  Tadashi Yamaguchi

    发明人： Hiroyuki Suzuki ,  Shinichi Okita ,  Tadashi Yamaguchi

    IPC分类号： H01L21/02 ,  H04L9/00

    CPC分类号： G06Q30/06 ,  G03F7/70425 ,  G03F7/70508 ,  G06F21/71 ,  G06F2221/2105 ,  G06F2221/2113 ,  G06F2221/2137 ,  G06F2221/2149 ,  G06Q10/10 ,  G06Q2220/18 ,  H01L21/67253 ,  H01L21/67294

    摘要： [PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.

    摘要翻译： [问题]为了确认基板处理系统是否被非法使用，并且在存在非法使用的情况下防止使用。 [解决方案]许可证文件LF是包括用于特定用户的基板处理系统的使用条件的文件加密许可证信息L. 匹配确认程序P 2确认由解密程序P 1解密的许可证文件LF的内容与从基板处理系统获得的设备信息DI，网络信息NI和当前时间CT之间的匹配，以确认事实的存在 的非法使用。 如果存在非法使用，则控制程序P 3基于来自匹配确认程序P 2的信息停止基板处理系统的操作，直到采取预定的动作为止。

    Method for manufacture of a physical quantity detector
    6.
    发明申请
    Method for manufacture of a physical quantity detector 失效
    物理量检测器的制造方法

    公开(公告)号：US20070181222A1

    公开(公告)日：2007-08-09

    申请号：US11657162

    申请日：2007-01-24

    申请人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

    发明人： Tetsuya Katsumi ,  Hitoshi Ofune ,  Tadashi Yamaguchi ,  Hiroshi Nagasaka ,  Naoki Yoshida

    IPC分类号： C23C22/70 ,  B32B15/01

    CPC分类号： G01L9/0051 ,  B22D15/02

    摘要： In the manufacture of a physical quantity detector, such as a pressure sensor and a load sensor, comprising a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part, the cylindrical part mentioned above is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold is composed of a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part. In another embodiment, the cavity is formed so that the parting face of the mold corresponds to the surface of the strain generating part.

    摘要翻译： 在物理量检测器的制造中，例如压力传感器和负载传感器，包括其一端被应变产生部分封闭的圆柱形部分和形成在应变发生部分上的传感器部分，上述圆柱形部分 通过熔化具有能够产生非晶合金的组成的合金材料制成，将所得熔融合金注入金属模具中，并且冷却金属模具中的熔融合金以赋予合金非晶质。 金属模具由具有至少两个用于形成空腔的分开部分和插入空腔中的插入销的分开模具组成，以限定圆柱形部件的内部构造，或者还有插入芯部 以形成对应于应变发生部的表面的空腔的表面。 在另一个实施例中，形成空腔，使得模具的分型面对应于应变发生部件的表面。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07247522B2

    公开(公告)日：2007-07-24

    申请号：US11018250

    申请日：2004-12-22

    申请人： Tadashi Yamaguchi

    发明人： Tadashi Yamaguchi

    IPC分类号： H01L23/48

    CPC分类号： H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/5442 ,  H01L2223/54473 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： In order to provide a semiconductor device which makes it possible to mount a semiconductor element on the substrate of the semiconductor device main body at the correct position with a higher degree of accuracy, a semiconductor element 2 is mounted at a circuit forming surface of a semiconductor substrate 1 at the periphery of which pad electrodes 5 are provided and a specific area in the semiconductor device containing the semiconductor element 2 is sealed with resin. At the circuit forming surface of the semiconductor substrate 1, reference lines 3 are formed in correspondence to the positions of at least three corners of the semiconductor element 2 to be mounted.

    摘要翻译： 为了提供一种能够以更高的精度将半导体元件安装在半导体器件主体的基板上的正确位置的半导体器件，半导体元件2安装在半导体的电路形成表面 在其周边设置有衬垫电极5的衬底1，并且用树脂密封包含半导体元件2的半导体器件中的比表面积。 在半导体衬底1的电路形成表面上，对应于要安装的半导体元件2的至少三个角的位置形成参考线3。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20070138573A1

    公开(公告)日：2007-06-21

    申请号：US11565913

    申请日：2006-12-01

    申请人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

    发明人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.

    摘要翻译： 根据本发明的半导体器件包括硅衬底，在硅衬底的主表面上形成有栅绝缘膜的栅电极，形成为覆盖栅电极的侧表面的侧壁间隔件， 至少两层作为最下层的氧化硅膜和形成在其上的氮化硅膜，在硅衬底的主表面中形成的源极区和漏极区，以便夹着栅电极，保护膜形成为 为了覆盖氧化硅膜的端面而不延伸到所述氮化硅膜的下方，所述端面位于所述源极区域和所述漏极区域的一侧，以及形成在所述源极区域和所述漏极区域中的金属硅化物层 所述保护膜的一侧远离所述栅电极。