公开(公告)号：US10020245B2

公开(公告)日：2018-07-10

申请号：US14150795

申请日：2014-01-09

Applicant: Infineon Technologies AG

Inventor： Henrik Ewe ,  Joachim Mahler ,  Anton Prueckl ,  Stefan Landau

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H05K1/18 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H05K1/05 ,  H05K3/46

CPC classification number: H01L23/481 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0655 ,  H01L25/18 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0557 ,  H01L2224/24137 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/05 ,  H05K1/185 ,  H05K1/188 ,  H05K3/4644 ,  H05K2201/09745 ,  H05K2201/09972 ,  H05K2203/0353 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of manufacturing a laminate electronic device is disclosed. One embodiment provides a carrier, the carrier defining a first main surface and a second main surface opposite to the first main surface. The carrier has a recess pattern formed in the first main surface. A first semiconductor chip is attached on one of the first and second main surface. A first insulating layer overlying the main surface of the carrier on which the first semiconductor chip is attached and the first semiconductor chip is formed. The carrier is then separated into a plurality of parts along the recess pattern.

公开(公告)号：US20150279782A1

公开(公告)日：2015-10-01

申请号：US14735604

申请日：2015-06-10

Applicant: Infineon Technologies AG

Inventor： Henrik Ewe ,  Joachim Mahler ,  Manfred Mengel ,  Reimund Engl ,  Josef Hoeglauer ,  Jochen Dangelmaier

IPC: H01L23/538 ,  H01L23/495 ,  H01L21/288 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/5389 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/288 ,  H01L21/31105 ,  H01L21/4821 ,  H01L21/6835 ,  H01L21/76801 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2221/68345 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24137 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/24246 ,  H01L2224/24998 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2225/06568 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/00 ,  H05K3/4661

Abstract: A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness.

公开(公告)号：US20130328213A1

公开(公告)日：2013-12-12

申请号：US13965630

申请日：2013-08-13

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba ,  Henrik Ewe ,  Klaus Schiess ,  Manfred Mengel

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L23/36 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/82102 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

Abstract: One aspect is a device including a carrier comprising a first conducting layer, a first insulating layer over the first conducting layer, and at least one first through-connection from a first face of the first insulating layer to a second face of the first insulating layer. A semiconductor chip is attached to the carrier and a second insulating layer is over the carrier and the semiconductor chip. A metal layer is over the second insulating layer. A second through-connection is through the second insulating layer electrically coupling the semiconductor chip to the metal layer. A third through-connection is through the second insulating layer electrically coupling the carrier to the metal layer.

Abstract translation: 一个方面是包括载体的器件，其包括第一导电层，在第一导电层上的第一绝缘层，以及从第一绝缘层的第一面到第一绝缘层的第二面的至少一个第一通孔连接 。 半导体芯片附着到载体上，第二绝缘层位于载体和半导体芯片之上。 金属层在第二绝缘层之上。 第二直通连接通过第二绝缘层将半导体芯片电耦合到金属层。 第三直通连接是通过第二绝缘层将载体电耦合到金属层。

公开(公告)号：US20130277704A1

公开(公告)日：2013-10-24

申请号：US13921060

申请日：2013-06-18

Applicant: Infineon Technologies AG

Inventor： Andreas Eder ,  Henrik Ewe ,  Stefan Landau ,  Joachim Mahler

IPC: H01L33/56

CPC classification number: H01L33/56 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2224/82 ,  H01L2924/00

Abstract: A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

Abstract translation: 提供了一种可靠的LED半导体器件的方法和系统。 在一个实施例中，该装置包括载体，设置在载体上的发光二极管，设置在发光二极管和载体上的封装材料，形成在封装材料中的至少一个贯穿连接，以及设置和结构化的金属化层 通过至少一个通过连接。

公开(公告)号：US09142739B2

公开(公告)日：2015-09-22

申请号：US13921060

申请日：2013-06-18

Applicant: Infineon Technologies AG

Inventor： Andreas Eder ,  Henrik Ewe ,  Stefan Landau ,  Joachim Mahler

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/62 ,  H01L23/00

CPC classification number: H01L33/56 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2224/82 ,  H01L2924/00

Abstract: A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

Abstract translation: 提供了一种用于可靠的LED半导体器件的方法和系统。 在一个实施例中，该装置包括载体，设置在载体上的发光二极管，设置在发光二极管和载体上的封装材料，形成在封装材料中的至少一个贯穿连接，以及设置和结构化的金属化层 通过至少一个通过连接。

公开(公告)号：US08952545B2

公开(公告)日：2015-02-10

申请号：US13965630

申请日：2013-08-13

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba ,  Henrik Ewe ,  Klaus Schiess ,  Manfred Mengel

IPC: H01L23/48 ,  H01L23/36 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/50

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L23/36 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/82102 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00

Abstract: One aspect is a device including a carrier comprising a first conducting layer, a first insulating layer over the first conducting layer, and at least one first through-connection from a first face of the first insulating layer to a second face of the first insulating layer. A semiconductor chip is attached to the carrier and a second insulating layer is over the carrier and the semiconductor chip. A metal layer is over the second insulating layer. A second through-connection is through the second insulating layer electrically coupling the semiconductor chip to the metal layer. A third through-connection is through the second insulating layer electrically coupling the carrier to the metal layer.

Abstract translation: 一个方面是包括载体的器件，其包括第一导电层，在第一导电层上的第一绝缘层，以及从第一绝缘层的第一面到第一绝缘层的第二面的至少一个第一通孔连接 。 半导体芯片附着到载体上，第二绝缘层位于载体和半导体芯片之上。 金属层在第二绝缘层之上。 第二直通连接通过第二绝缘层将半导体芯片电耦合到金属层。 第三直通连接是通过第二绝缘层将载体电耦合到金属层。

公开(公告)号：US20140117565A1

公开(公告)日：2014-05-01

申请号：US14150795

申请日：2014-01-09

Applicant: Infineon Technologies AG

Inventor： Henrik Ewe ,  Joachim Mahler ,  Anton Prueckl ,  Stefan Landau

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0655 ,  H01L25/18 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0557 ,  H01L2224/24137 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/05 ,  H05K1/185 ,  H05K1/188 ,  H05K3/4644 ,  H05K2201/09745 ,  H05K2201/09972 ,  H05K2203/0353 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of manufacturing a laminate electronic device is disclosed. One embodiment provides a carrier, the carrier defining a first main surface and a second main surface opposite to the first main surface. The carrier has a recess pattern formed in the first main surface. A first semiconductor chip is attached on one of the first and second main surface. A first insulating layer overlying the main surface of the carrier on which the first semiconductor chip is attached and the first semiconductor chip is formed. The carrier is then separated into a plurality of parts along the recess pattern.

Abstract translation: 公开了一种制造层压电子装置的方法。 一个实施例提供载体，载体限定第一主表面和与第一主表面相对的第二主表面。 载体具有形成在第一主表面中的凹陷图案。 第一半导体芯片附接在第一和第二主表面之一上。 覆盖在其上附着有第一半导体芯片的载体的主表面上的第一绝缘层和形成第一半导体芯片。 然后沿着凹槽图案将载体分离成多个部分。