公开(公告)号：US5325386A

公开(公告)日：1994-06-28

申请号：US871461

申请日：1992-04-21

申请人： Jack L. Jewell ,  Gregory R. Olbright

发明人： Jack L. Jewell ,  Gregory R. Olbright

IPC分类号： H01S3/23 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G06F3/033 ,  G06F3/042 ,  H01S5/00 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/423 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/2271 ,  G02B2027/014 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18388

摘要： A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) in order to provide a desired visual display within an observer's field of view. Sweep and subscanning techniques are employed, individually or in combination, to create a full M.times.N image from 1.times.L or K.times.L arrays of VCSELs, where M and N are multiple integers of K and L, respectively. Preferably, the VCSELs are contained within a display housing which may be attached to the head of the user by an attachment mechanism or may alternatively be hand held or mounted to a surface. The circular symmetry and low divergence of the emitted VCSEL radiation as well as the availability of multiple wavelengths, particularly, red, blue and green, allow high resolution monochrome or color images to be generated.

摘要翻译： 公开了一种视觉显示系统，其利用可见发射_反射_表面 - 发射激光器（VCSEL）的一维和/或二维阵列，以便在观察者视野内提供期望的视觉显示。 单独或组合采用扫描和副扫描技术从VCSEL的1xL或KxL阵列创建完整的MxN图像，其中M和N分别是K和L的多个整数。 优选地，VCSEL被包含在可以通过附接机构附接到使用者的头部的显示器外壳中，或者可替代地手持或安装到表面。 发射的VCSEL辐射的圆形对称性和低散度以及多个波长，特别是红色，蓝色和绿色的可用性允许产生高分辨率单色或彩色图像。

公开(公告)号：US5283447A

公开(公告)日：1994-02-01

申请号：US823496

申请日：1992-01-21

申请人： Gregory R. Olbright ,  Jack L. Jewell

发明人： Gregory R. Olbright ,  Jack L. Jewell

IPC分类号： H01S5/00 ,  H01L27/15 ,  H01L31/153 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/34 ,  H01L33/00

CPC分类号： H01S5/18341 ,  H01L27/15 ,  H01L31/153 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/3428 ,  H01S5/423

摘要： Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.

摘要翻译： 公开了包括垂直腔表面发射激光器（VCSEL）和晶体管的光电集成电路。 VCSEL包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对围绕一个或多个活性的光学发光量子阱层的间隔层，所述有源光发射量子阱层在可见光范围内具有用作器件的有源发光材料的带隙。 激光腔的厚度是m（λ）/ 2neff，其中m是整数，（λ）是激光辐射的自由空间波长，neff是空腔的有效折射率。 通过将底部反射镜和衬底重掺杂到一种导电类型并以相反的导电类型重掺杂上反射镜的区域来实现激光的电泵浦，以形成二极管结构并向二极管结构施加合适的电压。 公开了将VCSEL与双极和FET晶体管以及光电晶体管集成的实施例。

公开(公告)号：US5266794A

公开(公告)日：1993-11-30

申请号：US823418

申请日：1992-01-21

申请人： Gregory R. Olbright ,  Jack L. Jewell

发明人： Gregory R. Olbright ,  Jack L. Jewell

IPC分类号： G02B6/43 ,  H01S5/022 ,  H01S5/026 ,  H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H04B10/00 ,  H01J31/50

CPC分类号： H04B10/803 ,  G02B6/43 ,  H01S5/02288 ,  H01S5/0262 ,  H01L2224/18 ,  H01S5/02228 ,  H01S5/0261 ,  H01S5/0267 ,  H01S5/18341

摘要： A three-dimensional optical interconnection is disclosed having a stack of vertically aligned optoelectronic integrated (OEIC) modules. Each OEIC module includes an array of vertical cavity surface emitting lasers (VCSEL), receivers and electronic logic which are monolithically integrated on a single semiconductor substrate. Communication between the OEIC modules is effectuated by the free space propagation of laser radiation from the VCSELs to corresponding receivers on an adjacent OEIC module. Transistors, such as heterojunction bipolar transistors, may be used to drive the VCSELS.

摘要翻译： 公开了具有垂直对准的光电集成（OEIC）模块的堆叠的三维光学互连。 每个OEIC模块包括单个集成在单个半导体衬底上的垂直腔表面发射激光器（VCSEL），接收器和电子逻辑阵列。 OEIC模块之间的通信由激光辐射从VCSEL到相邻OEIC模块上的相应接收器的自由空间传播来实现。 诸如异质结双极晶体管的晶体管可以用于驱动VCSELS。

公开(公告)号：US5642376A

公开(公告)日：1997-06-24

申请号：US26326

申请日：1993-03-04

申请人： Gregory R. Olbright ,  Jack L. Jewell

发明人： Gregory R. Olbright ,  Jack L. Jewell

IPC分类号： H01S5/00 ,  H01S5/04 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S2302/00 ,  H01S5/041 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/3215 ,  H01S5/32308 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347

摘要： A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors. For radiation in the blue portion of the spectrum, the laser includes an active region of InGaN or GaN quantum wells and AlN/AlGaN mirrors.

摘要翻译： 公开了一种垂直腔表面发射激光器，其包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对间隔层，该间隔层围绕一个或多个活性光学发光量子阱层，其在可见光中具有带隙，其用作该器件的有源发光材料。 激光腔的厚度为mλ/ 2neff，其中m为整数，λ为激光辐射的自由空间波长，neff为空腔的有效折射率。 通过将底部反射镜和衬底重新掺杂到具有相反导电类型的上反射镜的一个导电类型和重掺杂区域以形成二极管结构并向二极管结构施加合适的电压来实现激光器的电泵浦。 对于光谱的黄色到绿色部分的辐射，激光器包括GaP或AlGaP量子阱和AlP / AlGaP反射镜的有源层。 对于光谱蓝色部分的辐射，激光器包括InGaN或GaN量子阱和AlN / AlGaN反射镜的有源区。

公开(公告)号：US5258990A

公开(公告)日：1993-11-02

申请号：US790964

申请日：1991-11-07

申请人： Gregory R. Olbright ,  Jack L. Jewell

发明人： Gregory R. Olbright ,  Jack L. Jewell

IPC分类号： H01S5/00 ,  H01S5/04 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S2302/00 ,  H01S5/041 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/3215 ,  H01S5/32308 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347

摘要： A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

摘要翻译： 公开了一种垂直腔表面发射激光器，其包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对间隔层，该间隔层围绕一个或多个活性光学发光量子阱层，其在可见光中具有带隙，其用作该器件的有源发光材料。 激光腔的厚度为mλ/ 2neff，其中m为整数，λ为激光辐射的自由空间波长，neff为空腔的有效折射率。 通过将底部反射镜和衬底重新掺杂到具有相反导电类型的上反射镜的一个导电类型和重掺杂区域以形成二极管结构并向二极管结构施加合适的电压来实现激光器的电泵浦。 描述了用于产生红色，绿色和蓝色辐射的本发明的具体实施例。

公开(公告)号：US5625636A

公开(公告)日：1997-04-29

申请号：US774915

申请日：1991-10-11

申请人： Robert P. Bryan ,  Peter Esherick ,  Jack L. Jewell ,  Kevin L. Lear ,  Gregory R. Olbright

发明人： Robert P. Bryan ,  Peter Esherick ,  Jack L. Jewell ,  Kevin L. Lear ,  Gregory R. Olbright

IPC分类号： G02B6/12 ,  G02B6/43 ,  H01S5/026 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19 ,  H01S3/10

CPC分类号： G02B6/43 ,  G02B6/12004 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/02288 ,  H01S5/18308 ,  H01S5/2059 ,  H01S5/423 ,  H01S5/50

摘要： A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

摘要翻译： 提供了一种单片集成的光电子器件，其将垂直腔表面发射激光器和作为输入或输出的感光或电感器件并入或串联连接到垂直腔表面发射激光器。 公开了垂直和并排布置，并且提供光学和电子反馈装置。 这些设备的阵列可以配置为支持光学计算和神经网络应用。

公开(公告)号：US07542493B2

公开(公告)日：2009-06-02

申请号：US11046735

申请日：2005-02-01

申请人： Jack L. Jewell

发明人： Jack L. Jewell

IPC分类号： H01S3/00

CPC分类号： H01S5/0612 ,  H01S5/02461 ,  H01S5/0284 ,  H01S5/06804 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18322 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/3095

摘要： A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.

摘要翻译： 公开了一种用于为半导体激光器提供温度补偿的新颖方法。 该方法利用半导体激光器的至少一个反射镜中的反射率特性来向器件提供温度补偿。

公开(公告)号：US5960018A

公开(公告)日：1999-09-28

申请号：US115689

申请日：1998-07-15

申请人： Jack L. Jewell ,  Henryk Temkin

发明人： Jack L. Jewell ,  Henryk Temkin

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06 ,  H01S3/08

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01S5/18311 ,  H01S5/2231 ,  H01S5/3235 ,  H01S5/34 ,  H01S5/343 ,  H01L33/105 ,  H01S2302/00 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US5897329A

公开(公告)日：1999-04-27

申请号：US964598

申请日：1997-11-05

申请人： Jack L. Jewell

发明人： Jack L. Jewell

IPC分类号： G02B3/00 ,  H01L33/10 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H04L29/08 ,  H01L21/20

CPC分类号： H01S5/18355 ,  G02B3/00 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H04L67/34 ,  H01L33/105 ,  H01S5/0042 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/2215 ,  H04L69/329

摘要： A method for producing an electrically conductive element is provided in which an oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation.

摘要翻译： 提供一种用于制造导电元件的方法，其中通过改变初始接受氧化的一层或多层形成氧化屏障。

公开(公告)号：US5295147A

公开(公告)日：1994-03-15

申请号：US994976

申请日：1992-12-22

申请人： Jack L. Jewell ,  Greg R. Olbright

发明人： Jack L. Jewell ,  Greg R. Olbright

IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S3/19

CPC分类号： H01S5/18358 ,  H01S2301/166 ,  H01S5/0422 ,  H01S5/1039 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/205 ,  H01S5/2218

摘要： A vertical-cavity, surface-emitting semiconductor laser having a substrate, an active layer of a semiconductor material which is adapted to generate light on a surface of the substrate, a pair of mirrors at opposite sides of the active layer and means for expanding the diameter of the output beam. Such means include a spacer layer of an optically passive material between the active layer and at least one of the mirrors, and mirror layers of reduced difference in index of refraction, interface layers having intermediate indices of refraction placed between mirror layers, in either case expanding the effective optical cavity length to at least 100 times the thickness of the active material in the active layer. Another means is anti-waveguiding which directly expands the diameter of the beam. The expanded cavity provides an output beam of larger diameter while maintaining stable single mode emission. The spacer layer may be a separate layer or region over the substrate or at least a portion of the substrate.

摘要翻译： 具有衬底的垂直腔表面发射半导体激光器，适于在衬底的表面上产生光的半导体材料的有源层，在有源层的相对侧上的一对反射镜和用于扩展 输出光束的直径。 这种装置包括在活性层和至少一个反射镜之间的光学无源材料的隔离层，以及折射率差异差的镜面层，具有放置在镜层之间的中间折射率的界面层，在任一情况下扩展 有效光腔长度至少为有源层中活性材料厚度的100倍。 另一种方法是直接扩大梁的直径的抗波导。 扩展腔提供较大直径的输出光束，同时保持稳定的单模发射。 间隔层可以是衬底上的单独的层或区域或衬底的至少一部分。