摘要:
The application relates to novel biosynthetic growth factor mutants, derived from GDF-5, which exhibit improved biological activity. Mutations at positions 453 and 456 of human GDF-5 are disclosed, as well as use of these mutants in therapy of diseases associated with tissue degeneration/destruction.
摘要:
The application relates to novel biosynthetic growth factor mutants, derived from GDF-5, which exhibit improved biological activity. Mutations at positions 453 and 456 of human GDF-5 are disclosed, as well as use of these mutants in therapy of diseases associated with tissue degeneration/destruction.
摘要:
The present invention concerns improved osteoinductive materials comprising matrix materials and morphogenetic proteins, wherein depending on the subject matter the proteins may be dimeric or monomeric proteins. The osteoinductive materials according to the present invention have improved properties. The invention further concerns methods for producing the respective improved osteoinductive materials.
摘要:
The present invention concerns improved osteoinductive materials comprising matrix materials and morphogenetic roteins, wherein depending on the subject matter the proteins may be dimeric or monomeric proteins. The osteoinductive materials according to the present invention have improved properties. The invention further concerns methods for producing the respective improved osteoinductive materials.
摘要:
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
摘要:
A description is given of a device comprising a first semiconductor chip, a molding compound layer embedding the first semiconductor chip, a first electrically conductive layer applied to the molding compound layer, a through hole arranged in the molding compound layer, and a solder material filling the through hole.
摘要:
A semiconductor stack and a semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack is disclosed. In one embodiment, a semiconductor chip is arranged between the intermediate wiring board and the wiring substrate, which is electrically connected by way of the wiring substrate on the one hand to external contacts on the underside of the wiring substrate and on the other hand to contact terminal areas in the edge regions of the wiring substrate. The intermediate wiring board has angled-away external flat conductors, which are electrically connected in the contact terminal areas of the wiring board. Furthermore, on the upper side of the intermediate wiring board, arranged on the free ends of the internal flat conductors are external contact terminal areas, which correspond in size and arrangement to external contacts of a semiconductor device to be stacked.