公开(公告)号：US07419909B2

公开(公告)日：2008-09-02

申请号：US11647722

申请日：2006-12-29

申请人： Jin-Ho Kim ,  Jae-Kwan Park ,  Dong-Hwa Kwak ,  Su-Jin Ahn ,  Yoon-Moon Park ,  Jue-Hwang Sim ,  Jang-Ho Park ,  Sang-Yong Park

发明人： Jin-Ho Kim ,  Jae-Kwan Park ,  Dong-Hwa Kwak ,  Su-Jin Ahn ,  Yoon-Moon Park ,  Jue-Hwang Sim ,  Jang-Ho Park ,  Sang-Yong Park

IPC分类号： H01L21/302

CPC分类号： H01L27/11568 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/105

摘要： Patterns are formed in a semiconductor device by defining a lower layer that includes a first region and a second region on a semiconductor substrate, forming first patterns with a first pitch that extend to the first and second regions, forming second patterns with a second pitch in the second region that are alternately arranged with the first patterns, forming a space insulating layer that covers the first and second patterns and comprises gap regions that are alternately arranged with the first patterns so as to correspond with the second patterns, forming third patterns that correspond to the second patterns in the gap regions, respectively, etching the space insulating layer between the first and second patterns and between the first and third patterns, such that the space insulating layer remains between the second patterns and the third patterns, and etching the lower layer using the first, second, and third patterns and the remaining space insulating layer between the second and third patterns as an etching mask.

摘要翻译： 通过在半导体衬底上限定包括第一区域和第二区域的下层形成半导体器件中的图案，形成具有延伸到第一和第二区域的第一间距的第一图案，以第二间距形成第二图案 所述第二区域与所述第一图案交替布置，形成覆盖所述第一图案和所述第二图案的间隔绝缘层，并且包括与所述第一图案交替布置以与所述第二图案对应的间隙区域，形成与所述第二图案对应的第三图案 分别在间隙区域中蚀刻第一和第二图案之间以及第一和第三图案之间的空间绝缘层，使得空​​间绝缘层保留在第二图案和第三图案之间，并蚀刻下部 使用第一，第二和第三图案和第二个之间的剩余空间绝缘层 nd第三图案作为蚀刻掩模。

公开(公告)号：US20080085581A1

公开(公告)日：2008-04-10

申请号：US11647722

申请日：2006-12-29

申请人： Jin-Ho Kim ,  Jae-Kwan Park ,  Dong-Hwa Kwak ,  Su-Jin Ahn ,  Yoon-Moon Park ,  Jue-Hwang Sim ,  Jang-Ho Park ,  Sang-Yong Park

发明人： Jin-Ho Kim ,  Jae-Kwan Park ,  Dong-Hwa Kwak ,  Su-Jin Ahn ,  Yoon-Moon Park ,  Jue-Hwang Sim ,  Jang-Ho Park ,  Sang-Yong Park

IPC分类号： H01L21/8242

CPC分类号： H01L27/11568 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/105

摘要： Patterns are formed in a semiconductor device by defining a lower layer that includes a first region and a second region on a semiconductor substrate, forming first patterns with a first pitch that extend to the first and second regions, forming second patterns with a second pitch in the second region that are alternately arranged with the first patterns, forming a space insulating layer that covers the first and second patterns and comprises gap regions that are alternately arranged with the first patterns so as to correspond with the second patterns, forming third patterns that correspond to the second patterns in the gap regions, respectively, etching the space insulating layer between the first and second patterns and between the first and third patterns, such that the space insulating layer remains between the second patterns and the third patterns, and etching the lower layer using the first, second, and third patterns and the remaining space insulating layer between the second and third patterns as an etching mask.

公开(公告)号：US07842571B2

公开(公告)日：2010-11-30

申请号：US11623269

申请日：2007-01-15

申请人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Jin-Ho Kim ,  Ki-Nam Kim

发明人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Jin-Ho Kim ,  Ki-Nam Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/76897 ,  H01L21/76816 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529

摘要： In one embodiment a semiconductor device includes odd contacts and respective odd lines. Spacers are formed on sidewalls of the odd lines and even openings for even lines are formed by performing an etching process. Even contacts are formed in the even openings and then even lines are formed.

摘要翻译： 在一个实施例中，半导体器件包括奇数触点和相应的奇数行。 间隔物形成在奇数行的侧壁上，并且通过执行蚀刻工艺形成均匀线的均匀开口。 偶数触点形成在均匀开口中，然后形成均匀的线。

公开(公告)号：US20110032763A1

公开(公告)日：2011-02-10

申请号：US12909223

申请日：2010-10-21

申请人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Jin-Ho Kim ,  Ki-Nam Kim

发明人： Dong-Hwa Kwak ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Jin-Ho Kim ,  Ki-Nam Kim

IPC分类号： G11C16/04

CPC分类号： H01L21/76897 ,  H01L21/76816 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529

摘要： In some embodiments, a semiconductor device includes first bit lines connected to respective first contacts. Spacers are disposed on sidewalls of the first bit lines. A second bit line is self-alignedly disposed between adjacent spacers, and a second contact is self-aligned with and connected to the second bit line.

摘要翻译： 在一些实施例中，半导体器件包括连接到相应的第一触点的第一位线。 间隔件设置在第一位线的侧壁上。 第二位线自相对地布置在相邻间隔件之间，并且第二触点与第二位线自对准并连接到第二位线。

公开(公告)号：US08785992B2

公开(公告)日：2014-07-22

申请号：US13186667

申请日：2011-07-20

申请人： Kang-Hyun Baek ,  Sang-Il Jung ,  Jin-Ho Kim ,  Jeong-Ho Lee ,  Jeong-Bin Kim

发明人： Kang-Hyun Baek ,  Sang-Il Jung ,  Jin-Ho Kim ,  Jeong-Ho Lee ,  Jeong-Bin Kim

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14629

摘要： An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.

摘要翻译： 示例性实施例涉及导光结构。 导光结构可以包括由设置在半导体衬底上的第一，第二和第三绝缘层限定的底表面和侧壁。 底表面可以平行于半导体衬底的主表面并且可以设置在第一绝缘层中。 侧壁可以穿透第二和第三绝缘层以延伸到第一绝缘层，并且侧壁可以相对于半导体衬底的主表面是锥形的。 导光结构可以包括在图像传感器中。 图像传感器可以包括在基于处理器的系统中。

公开(公告)号：US08674494B2

公开(公告)日：2014-03-18

申请号：US13564309

申请日：2012-08-01

申请人： Tae-Duk Nam ,  Jin-Ho Kim ,  Hyuk-Su Kim ,  Hyoung-Suk Kim ,  Tae-Young Lee

发明人： Tae-Duk Nam ,  Jin-Ho Kim ,  Hyuk-Su Kim ,  Hyoung-Suk Kim ,  Tae-Young Lee

IPC分类号： H01L23/02

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2924/01013 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor package may include a packaging substrate, a first semiconductor chip on the packaging substrate, and a support plate on the packaging substrate. The support plate may be spaced apart from the first semiconductor chip in a direction parallel with respect to a surface of the packaging substrate. A second semiconductor chip may be provided on the first semiconductor chip and on the support plate so that the first semiconductor chip is between the second semiconductor chip and the packaging substrate and so that the support plate is between the second semiconductor chip and the packaging substrate. An adhesion layer may bond the second semiconductor chip to the first semiconductor chip and may bond the second semiconductor chip to the support plate. In addition, an electrical coupling may be provided between the first semiconductor chip and the packaging substrate.

摘要翻译： 半导体封装可以包括封装衬底，封装衬底上的第一半导体芯片，以及封装衬底上的支撑板。 支撑板可以在相对于包装基板的表面平行的方向上与第一半导体芯片间隔开。 可以在第一半导体芯片和支撑板上设置第二半导体芯片，使得第一半导体芯片在第二半导体芯片和封装基板之间，并且支撑板位于第二半导体芯片和封装基板之间。 粘合层可以将第二半导体芯片接合到第一半导体芯片，并且可以将第二半导体芯片接合到支撑板。 此外，可以在第一半导体芯片和封装基板之间设置电耦合。

公开(公告)号：US08441604B2

公开(公告)日：2013-05-14

申请号：US13251790

申请日：2011-10-03

申请人： Youn-Seung Choi ,  Jin-Ho Kim

发明人： Youn-Seung Choi ,  Jin-Ho Kim

IPC分类号： G02F1/1343 ,  G02F1/1337

CPC分类号： G02F1/1393 ,  G02F1/133707 ,  G02F1/134309 ,  G02F2001/134318

摘要： A VA mode LCD device is disclosed, to improve the viewing-angle properties by isotropically compensating for a viewing angle, in which the VA mode LCD device includes first and second substrates; a plurality of gate and data lines formed on the first substrate, and formed perpendicularly to define a plurality of pixel regions. A thin film transistor is formed in each pixel region of the first substrate. A pixel electrode and a common electrode are formed in each pixel of the respective first and second substrates, wherein the pixel and common electrodes generate an electric field. At least one first slit of a curved-stripe shape, such as a circular-stripe shape, is formed in the pixel electrode of the first substrate. At least one second slit is formed in the common electrode of the second substrate. A liquid crystal layer formed between the first and second substrates.

摘要翻译： 公开了VA模式LCD装置，以通过各向同性地补偿视角来改善视角特性，其中VA模式LCD装置包括第一和第二基板; 多个栅极和数据线，形成在第一基板上，并垂直形成以限定多个像素区域。 在第一衬底的每个像素区域中形成薄膜晶体管。 像素电极和公共电极形成在相应的第一和第二基板的每个像素中，其中像素和公共电极产生电场。 在第一基板的像素电极中形成至少一个弯曲条形状的第一狭缝，例如圆形条纹形状。 在第二基板的公共电极中形成至少一个第二狭缝。 形成在第一和第二基板之间的液晶层。

公开(公告)号：US08315219B2

公开(公告)日：2012-11-20

申请号：US12702793

申请日：2010-02-09

申请人： Jin-Hyoung Kim ,  Sun-Gi Kim ,  Dae-Hyung Kwon ,  Choong-Seon Hong ,  Jin-Ho Kim ,  Byung-Goo Choi ,  Jihyuk Hgo

发明人： Jin-Hyoung Kim ,  Sun-Gi Kim ,  Dae-Hyung Kwon ,  Choong-Seon Hong ,  Jin-Ho Kim ,  Byung-Goo Choi ,  Jihyuk Hgo

IPC分类号： H04W4/00

CPC分类号： H04W8/06 ,  H04L63/0892 ,  H04W80/04 ,  H04W88/182 ,  Y02D70/144

摘要： A method is provided for supporting mobility of a Mobile Node (MN) in a multi-hop Internet Protocol (IP) network, in which an MN that has moved from a source Personal Area Network (PAN) to a target PAN, sends a Router Solicitation (RS) message with an option for requesting its profile to a gateway of the target PAN, and receives a Router Advertisement (RA) message from the gateway in response to the RS message. The RA message includes a home prefix of the MN as the requested profile. The method supports mobility of MNs, enables unicast communication, and facilitates efficient use of the network.

摘要翻译： 提供了一种用于支持移动节点（MN）在多跳互联网协议（IP）网络中的移动性的方法，其中已经从源个人局域网（PAN）移动到目标PAN的MN发送路由器 索引（RS）消息具有用于向目标PAN的网关请求其简档的选项，并且响应于RS消息从网关接收路由器通告（RA）消息。 RA消息包括MN的归属前缀作为请求的简档。 该方法支持MN的移动性，实现单播通信，并有助于网络的有效利用。

公开(公告)号：US20120196439A1

公开(公告)日：2012-08-02

申请号：US13289107

申请日：2011-11-04

申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

IPC分类号： H01L21/28

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

公开(公告)号：US20110007969A1

公开(公告)日：2011-01-13

申请号：US12832631

申请日：2010-07-08

申请人： Min-Kyu PARK ,  Hee-Chan Park ,  Jin-Ho Kim ,  Ji-Hye Kim ,  Sung-Dae Cho ,  Moon-Gi Kang ,  Chang-Won Kim ,  Hyun-Mook Oh

发明人： Min-Kyu PARK ,  Hee-Chan Park ,  Jin-Ho Kim ,  Ji-Hye Kim ,  Sung-Dae Cho ,  Moon-Gi Kang ,  Chang-Won Kim ,  Hyun-Mook Oh

IPC分类号： G06K9/40

CPC分类号： H04N5/3572

摘要： A lens shading correction method and apparatus are provided for removing vignetting occurring in digital images due to lens shading. A white image captured by an image pickup device and an image pickup unit is separated into reference white images corresponding to color channels. A vignetting center having a maximum light intensity is estimated in each of the reference white images. Multiple reference segments on each of the reference white images are defined. A lens shading correction value corresponding to each pixel constituting the reference segments are calculated using a corresponding light intensity. A lens shading correction function corresponding to each reference segment is derived using a corresponding lens shading correction value. Vignetting of a general image received in a general image processing mode is removed, using the derived multiple lens shading correction functions.

摘要翻译： 提供了一种透镜阴影校正方法和装置，用于消除由于透镜阴影而在数字图像中发生的渐晕。 由图像拾取装置和图像拾取单元拍摄的白色图像被分离为与颜色通道对应的参考白色图像。 在每个参考白色图像中估计具有最大光强度的渐晕中心。 定义每个参考白图像上的多个参考段。 使用对应的光强度计算与构成基准片段的每个像素对应的镜片阴影校正值。 使用相应的透镜阴影校正值导出与每个参考片段对应的镜片遮蔽校正功能。 使用导出的多个透镜阴影校正功能来消除在一般图像处理模式中接收的一般图像的渐晕。