公开(公告)号：US09422950B2

公开(公告)日：2016-08-23

申请号：US14000351

申请日：2012-02-21

申请人： John Hartzell ,  James Cirillo ,  Dustin Hromyak ,  Hung phi Nguyen ,  David B. Crowley ,  Michael A. Laurich

发明人： John Hartzell ,  James Cirillo ,  Dustin Hromyak ,  Hung phi Nguyen ,  David B. Crowley ,  Michael A. Laurich

IPC分类号： F01B25/26 ,  F15B15/00 ,  F15B15/28

CPC分类号： F15B15/00 ,  F15B15/2846 ,  F15B15/2892 ,  G01D11/30 ,  Y10T29/49002

摘要： A piston-cylinder actuator includes a unique mount for an absolute-position sensor. The mount is made from a bearing material provides a flexible connection between the sensor mount and the cylinder housing. This flexible connection allows the piston rod to deflect naturally, under its own weight or under other laterally-directed forces, while maintaining the distance and perpendicularity between the sensor and the rod surface, within acceptable limits. The sensor mount is made from a bearing material that will allow it to float directly on the rod surface without scuffing or otherwise damaging the rod surface, particularly the markings or other indicia on that surface. Due to the flexible connection between the sensor mount and the cylinder housing, the proper distance between the sensor and the rod surface can be maintained at all times.

摘要翻译： 活塞气缸致动器包括用于绝对位置传感器的独特安装。 安装座由轴承材料制成，在传感器支架和气缸壳体之间提供灵活的连接。 这种柔性连接允许活塞杆在其自身重量下或在其它侧向力下自然偏转，同时保持传感器和杆表面之间的距离和垂直度在可接受的限度内。 传感器支架由轴承材料制成，可使其直接在杆表面上浮动，而不会磨损或以其他方式损坏杆表面，特别是该表面上的标记或其他标记。 由于传感器支架和气缸壳体之间的灵活连接，传感器和杆表面之间的适当距离可以始终保持。

公开(公告)号：US20050218406A1

公开(公告)日：2005-10-06

申请号：US11139726

申请日：2005-05-26

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/78642 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/049 ,  H01L21/31612 ,  H01L29/66666 ,  H01L29/6675

摘要： A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.

摘要翻译： 提供一种用于在垂直薄膜晶体管（V-TFT）制造工艺中形成低温垂直栅极绝缘体的方法。 该方法包括：形成具有垂直侧壁和顶表面的栅极，覆盖衬底绝缘层; 沉积覆盖栅极的氧化硅薄膜栅极绝缘体; 使用高密度等离子体源在低于400℃的温度下等离子体氧化栅极绝缘体; 形成覆盖所述栅极顶表面的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 以及在位于第一和第二源极/漏极区之间的栅极绝缘体中形成覆盖第一栅极侧壁的沟道区。 当氧化硅薄膜栅极绝缘体沉积在栅极上覆盖Si氧化物层时，可以使用低温沉积工艺，从而可以获得大于65％的阶梯覆盖率。

公开(公告)号：US20050202652A1

公开(公告)日：2005-09-15

申请号：US11013605

申请日：2004-12-15

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L29/872 ,  B05D5/12 ,  C23C16/24 ,  C23C16/455 ,  C23C16/509 ,  C30B1/00 ,  H01L21/00 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/36 ,  H01L21/42 ,  H01L21/469 ,  H01L29/47 ,  H01L29/786

CPC分类号： H01L21/02164 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/3003 ,  H01L21/31612 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/78609

摘要： A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively coupled plasma (ICP) source; introducing an atmosphere including H2 at a system pressure up to 500 milliTorr; hydrogenating the stack at a temperature of less than 400 degrees C., using the high density plasma source; and forming an electrode overlying the oxide. The electrode may be formed either before or after the hydrogenation. The Si/oxide stack may be formed in a number of ways. In one aspect, a Si layer is formed, and the silicon layer is plasma oxidized at a temperature of less than 400 degrees C., using an ICP source. The oxide formation, additional oxidation, and hydrogenation steps can be conducted in-situ in a common chamber.

摘要翻译： 提供了高密度等离子体加氢方法。 通常，该方法包括：形成硅（Si）/氧化物堆叠层; 使用诸如电感耦合等离子体（ICP）源的高密度等离子体源，在小于400℃的温度下等离子体氧化Si /氧化物堆叠; 在系统压力高达500毫托的地方引入包括H2的气氛; 使用高密度等离子体源在小于400摄氏度的温度下对叠层进行氢化; 并形成覆盖氧化物的电极。 电极可以在氢化之前或之后形成。 Si /氧化物堆叠可以以多种方式形成。 在一个方面，使用ICP源形成Si层，并且在低于400℃的温度下对硅层进行等离子体氧化。 氧化物形成，附加氧化和氢化步骤可以在公共室中原位进行。

公开(公告)号：US06673220B2

公开(公告)日：2004-01-06

申请号：US09862107

申请日：2001-05-21

申请人： Apostolos Voutsas ,  John Hartzell

发明人： Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L2906

CPC分类号： C30B29/06 ,  C23C14/3407 ,  C23C14/564 ,  C30B33/00 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S438/977

摘要： A method for fabricating silicon tiles and silicon tile targets has been provided, such as may be used in the sputter deposition of thin film transistor (TFT) silicon films. The method describes processes of cutting the tiles, beveling the tiles edges, etching the tiles to minimize residual damage caused by cutting the tiles, polishing the tiles to a specified flatness, and attaching the tiles to a backing plate. All these processes are performed with the aim of minimizing contamination and particle formations when the target is used for sputter deposition.

摘要翻译： 已经提供了制造硅瓦和硅瓦靶的方法，例如可以用于薄膜晶体管（TFT）硅膜的溅射沉积。 该方法描述了切割瓦片的方法，使瓦片边缘倾斜，蚀刻瓦片以最小化由切割瓦片引起的残余损伤，将瓦片抛光到指定的平面度，以及将瓦片附接到背板。 所有这些过程都是为了在将目标物用于溅射沉积时最大限度地减少污染物和颗粒形成。

公开(公告)号：US20130319224A1

公开(公告)日：2013-12-05

申请号：US14000351

申请日：2012-02-21

申请人： John Hartzell ,  James Cirillo ,  Dustin Hromyak ,  Hung phi Nguyen ,  David B. Crowley ,  Michael A. Laurich

发明人： John Hartzell ,  James Cirillo ,  Dustin Hromyak ,  Hung phi Nguyen ,  David B. Crowley ,  Michael A. Laurich

IPC分类号： F15B15/00

CPC分类号： F15B15/00 ,  F15B15/2846 ,  F15B15/2892 ,  G01D11/30 ,  Y10T29/49002

摘要： A piston-cylinder actuator includes a unique mount for an absolute-position sensor. The mount is made from a bearing material provides a flexible connection between the sensor mount and the cylinder housing. This flexible connection allows the piston rod to deflect naturally, under its own weight or under other laterally-directed forces, while maintaining the distance and perpendicularity between the sensor and the rod surface, within acceptable limits. The sensor mount is made from a bearing material that will allow it to float directly on the rod surface without scuffing or otherwise damaging the rod surface, particularly the markings or other indicia on that surface. Due to the flexible connection between the sensor mount and the cylinder housing, the proper distance between the sensor and the rod surface can be maintained at all times.

摘要翻译： 活塞气缸致动器包括用于绝对位置传感器的独特安装。 安装座由轴承材料制成，在传感器支架和气缸壳体之间提供灵活的连接。 这种柔性连接允许活塞杆在其自身重量下或在其它侧向力下自然偏转，同时保持传感器和杆表面之间的距离和垂直度在可接受的限度内。 传感器支架由轴承材料制成，可使其直接在杆表面上浮动，而不会磨损或以其他方式损坏杆表面，特别是该表面上的标记或其他标记。 由于传感器支架和气缸壳体之间的灵活连接，传感器和杆表面之间的适当距离可以始终保持。

公开(公告)号：US20070278600A1

公开(公告)日：2007-12-06

申请号：US11717231

申请日：2007-03-13

申请人： Changqing Zhan ,  Paul Schuele ,  John Conley ,  John Hartzell

发明人： Changqing Zhan ,  Paul Schuele ,  John Conley ,  John Hartzell

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81B3/0021 ,  H01L29/868

摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

摘要翻译： 提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。 该方法沉积覆盖在基底上的薄膜。 基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。 非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子 的薄膜材料。 悬臂梁由薄膜形成，二极管嵌入悬臂梁。 二极管由与悬臂梁共用的薄膜制成。 共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

公开(公告)号：US20070023851A1

公开(公告)日：2007-02-01

申请号：US11516473

申请日：2006-09-06

申请人： John Hartzell ,  Changqing Zhan ,  Michael Wolfson

发明人： John Hartzell ,  Changqing Zhan ,  Michael Wolfson

IPC分类号： H01L29/66

CPC分类号： G01L1/18 ,  B81C1/00246 ,  G01L1/16 ,  H01L27/12 ,  H01L27/20 ,  H04R17/02 ,  H04R19/00 ,  H04R31/00 ,  H04R2499/11

摘要： A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplies power to the electronic device and transceives electrical signals. The sensor is able to operate dynamically, in real-time. For example, if the mechanical device undergoes a sequence of mechanical states at a corresponding plurality of times, the electronic device is able to supply a sequence of electrical signals to the pixel interface that are responsive to the sequence of mechanical states, at the plurality of times. Each MEMS pixel sensor may include a number of mechanical devices, and corresponding electronic devices, to provide redundancy or to measure a broadband response range.

摘要翻译： MEMS像素传感器设置有具有机械体的薄膜机械装置，其具有响应于邻近环境的机械状态。 薄膜电子设备将机械状态转换为电信号。 像素接口为电子设备供电并收发电信号。 该传感器能够实时动态地运行。 例如，如果机械装置在相应的多次经历了一系列机械状态，那么电子装置能够在多个时刻向像素接口提供响应于机械状态序列的电信号序列 次 每个MEMS像素传感器可以包括多个机械装置和相应的电子装置，以提供冗余或测量宽带响应范围。

公开(公告)号：US20060110939A1

公开(公告)日：2006-05-25

申请号：US11327612

申请日：2006-01-06

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/31

CPC分类号： H01L21/31608 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31662

摘要： A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density plasma (HDP) source; and, forming an MyOk layer in response to the HDP source, where k>x. In one aspect, the method further includes decreasing the concentration of oxide charge in response to forming the MyOk layer. In another aspect, the MyOx layer is deposited with an impurity N, and the method further includes creating volatile N oxides in response to forming the MyOk layer. For example, the impurity N may be carbon and the method creates a volatile carbon oxide.

摘要翻译： 提供了另外氧化薄膜氧化物的方法。 该方法包括：提供衬底; 沉积覆盖衬底的MyOx（M氧化物）层，其中M是具有+2至+5范围内的氧化态的固体元素; 将MyOx层处理成高密度等离子体（HDP）源; 并且响应于HDP源形成MyOk层，其中k> x。 在一个方面，该方法还包括响应于形成MyOk层而降低氧化物电荷的浓度。 在另一方面，MyOx层沉积有杂质N，并且该方法还包括响应于形成MyOk层而产生挥发性N氧化物。 例如，杂质N可以是碳，并且该方法产生挥发性碳氧化物。

公开(公告)号：US20070287233A1

公开(公告)日：2007-12-13

申请号：US11818716

申请日：2007-06-15

申请人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

发明人： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

IPC分类号： H01L21/339

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

摘要翻译： 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US20060211162A1

公开(公告)日：2006-09-21

申请号：US11227843

申请日：2005-09-14

申请人： John Hartzell

发明人： John Hartzell

IPC分类号： H01L21/00

CPC分类号： B81C1/00 ,  C30B13/00 ,  C30B35/00

摘要： Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropriately changed thereby to establish the desired mechanical properties for a created device.

摘要翻译： 加工和系统创建，以及与之相关的产品，非常小尺寸的奇异或单片阵列的机械装置。 相对于其内部晶体结构变得适当变化的选定材料进行激光处理，从而建立所创造的器件的期望的机械性能。