公开(公告)号：US5236610A

公开(公告)日：1993-08-17

申请号：US827946

申请日：1992-02-03

申请人： Joseph M. Perez ,  Yuming Zhang ,  Chia-soon Ku ,  Stephen M. Hsu

发明人： Joseph M. Perez ,  Yuming Zhang ,  Chia-soon Ku ,  Stephen M. Hsu

IPC分类号： C10M111/04 ,  C10M169/04

CPC分类号： C10M169/04 ,  C10M111/04 ,  C10M2203/06 ,  C10M2203/065 ,  C10M2205/0285 ,  C10M2207/023 ,  C10M2207/024 ,  C10M2207/026 ,  C10M2207/027 ,  C10M2207/281 ,  C10M2207/282 ,  C10M2207/283 ,  C10M2207/2835 ,  C10M2207/286 ,  C10M2207/287 ,  C10M2207/288 ,  C10M2207/289 ,  C10M2215/06 ,  C10M2215/064 ,  C10M2215/065 ,  C10M2215/066 ,  C10M2215/067 ,  C10M2215/068 ,  C10M2219/066 ,  C10M2219/068 ,  C10M2219/10 ,  C10M2219/102 ,  C10M2219/104 ,  C10M2219/106 ,  C10M2219/108 ,  C10M2223/003 ,  C10M2223/02 ,  C10M2223/023 ,  C10M2223/04 ,  C10M2223/0405 ,  C10M2223/041 ,  C10M2223/042 ,  C10M2223/045 ,  C10M2223/049 ,  C10M2223/0495 ,  C10M2223/0603 ,  C10M2223/083 ,  C10M2223/10 ,  C10M2223/103 ,  C10N2210/02 ,  C10N2230/08 ,  C10N2240/10 ,  C10N2240/101 ,  C10N2240/102 ,  C10N2240/103 ,  C10N2240/104 ,  C10N2240/106 ,  C10N2240/12 ,  C10N2240/121

摘要： An antioxidant additive for an engine or propulsion system lubricant subjected to high temperatures which includes a high molecular weight substituted phenolic carboxylic acid tetraester of pentaerythritol. A lubricant blend which is capable of solubilizing the antioxidant additive and includes a polyolester, a phosphate ester and at least one of a polyalphaolefin and an alkylated naphthalene.

摘要翻译： 用于经受高温的发动机或推进系统润滑剂的抗氧化添加剂，其包括季戊四醇的高分子量取代的酚羧酸四酯。 一种润滑剂混合物，其能够增溶抗氧化添加剂并且包括多元醇酯，磷酸酯和至少一种聚α-烯烃和烷基化萘。

公开(公告)号：US09728292B2

公开(公告)日：2017-08-08

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L29/868 ,  H01L21/04 ,  H01L29/66 ,  H01L29/36 ,  H01L29/861 ,  H01L29/16 ,  H01L29/167 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

公开(公告)号：US09707605B2

公开(公告)日：2017-07-18

申请号：US13319006

申请日：2010-05-10

申请人： Tao Zhu ,  Pieter Schellingerhout ,  Yuming Zhang ,  Jiangbo Ma

发明人： Tao Zhu ,  Pieter Schellingerhout ,  Yuming Zhang ,  Jiangbo Ma

IPC分类号： C10M105/48 ,  C10M105/34 ,  B21B45/02 ,  C10M173/00

CPC分类号： B21B45/0242 ,  C10M173/00 ,  C10M2203/1006 ,  C10M2207/2805 ,  C10M2207/30 ,  C10M2207/401 ,  C10M2215/223 ,  C10M2219/00 ,  C10M2223/00 ,  C10N2220/021 ,  C10N2220/082 ,  C10N2230/06 ,  C10N2230/12 ,  C10N2230/56 ,  C10N2240/405 ,  C10N2240/408

摘要： An oil in water lubricant fluid for use in steel cold rolling, comprising an oil in water emulsion having a particle size of 1 μm or less, consisting of an oil phase and water, where the oil phase includes about 5 wt % to about 40 wt % of at least one polymeric surfactant, about 25 wt % to about 95 wt % base oil, about 0.2 wt % to about 10 wt % extreme pressure lubrication additives, and about 0.5 wt % to about 6 wt % other functional additives.

公开(公告)号：US20130059615A1

公开(公告)日：2013-03-07

申请号：US13520175

申请日：2011-06-30

申请人： Jinlong Wang ,  Qihui Wu ,  Yang Yang ,  Yuming Zhang

发明人： Jinlong Wang ,  Qihui Wu ,  Yang Yang ,  Yuming Zhang

IPC分类号： H04B15/00

CPC分类号： H04W72/04 ,  C07F15/0033 ,  H04W16/10 ,  H04W52/46 ,  H04W72/046

摘要： The invention relates to a resource distribution method for throughput maximization in a cooperative cognitive SIMO network. The primary user sends data after receiving a cooperation confirmation message, and the cognitive network keeps silence, receives the information data of the primary user and simultaneously decodes the data. The cognitive users which successfully decode the data utilize part of their transmission power to send the data of themselves to the cognitive base station, the remaining transmission power is used for helping in forwarding the data of the primary user; the cognitive users which cannot successfully decode the data only send the data of themselves and do not forward the data of the primary user. The cognitive base station eliminates the interference of the data of primary user in the received mixed signals and performs beamforming on the signals after eliminating the interference. According to the combined adjustment of the transmission power vector, the power distribution factor vector and the beamforming weight vectors of the cognitive SIMO network, the maximum throughput performance can be realized in the cognitive network while the target transmission rate of the primary user is ensured, furthermore, very fast convergence rate can be realized in the proposed resource distribution method.

摘要翻译： 本发明涉及一种协作认知SIMO网络中吞吐量最大化的资源分配方法。 主用户在接收到合作确认消息后发送数据，认知网络保持静音，接收主用户的信息数据并同时解码数据。 成功解码数据的认知用户利用其部分传输功率将自身的数据发送到认知基站，剩余的传输功率用于帮助转发主用户的数据; 不能成功解码数据的认知用户只发送自己的数据，不转发主用户的数据。 认知基站消除了接收到的混合信号中主用户数据的干扰，并在消除干扰后对信号进行波束成形。 根据传输功率矢量，认知SIMO网络的功率分布因子向量和波束成形权重向量的组合调整，可以在认证网络中实现最大吞吐量性能，同时确保主用户的目标传输速率， 此外，在所提出的资源分配方法中可以实现非常快的收敛速度。

公开(公告)号：US20120218230A1

公开(公告)日：2012-08-30

申请号：US13508125

申请日：2010-11-02

申请人： Lei Zhao ,  Yuming Zhang

发明人： Lei Zhao ,  Yuming Zhang

IPC分类号： G06F3/042

CPC分类号： G06F3/0421 ,  G06F2203/04104

摘要： An infrared touch screen device and a multi-touch locating method thereof are provided. On the touch screen, large angle infrared emitting elements and infrared receiving element are used to realize the axis scanning of multi-angle by an optimized sampling and processing circuit. After the data processing of removing ambient light, normalization and so on for original data of the axis scanning, the logic axis touch information is generated, and a luminance map of the current frame is generated according to the information. Multiple valid touch regions are recognized by contrast with a theoretical touch luminance map. Then a tracing algorithm of image is used, and a multi-touch event is outputted finally. The touch device is simple, reliable and accurate and has wide range application.

摘要翻译： 提供了一种红外线触摸屏设备及其多触摸定位方法。 在触摸屏上，采用大角度红外发射元件和红外线接收元件，通过优化的采样和处理电路实现多角度的轴扫描。 在对轴扫描的原始数据进行去除环境光，归一化等的数据处理之后，生成逻辑轴触摸信息，并且根据该信息生成当前帧的亮度图。 通过与理论触摸亮度图的对比来识别多个有效触摸区域。 然后使用图像的跟踪算法，最终输出多点触摸事件。 触摸设备简单，可靠，准确，应用范围广。

公开(公告)号：US09247551B2

公开(公告)日：2016-01-26

申请号：US13520171

申请日：2011-06-30

申请人： Qihui Wu ,  Jinlong Wang ,  Yang Yang ,  Yuming Zhang

发明人： Qihui Wu ,  Jinlong Wang ,  Yang Yang ,  Yuming Zhang

IPC分类号： H04W72/00 ,  H04B7/14 ,  H04W72/08 ,  H04B7/02

CPC分类号： H04W72/082 ,  H04B7/026

摘要： The invention relates to a cognitive SIMO network access method based on cooperative relay, wherein a cognitive base station collects channel responses in a network and judges whether the cognitive users can cooperate with a primary user to achieve the target transmission rate required by the primary user or not, if so, a cognitive SIMO network is accessible to a frequency band licensed to the primary user; otherwise, the cognitive SIMO network is non-accessible. The access method can enable a plurality of the cognitive users and the primary user to simultaneously use the same licensed spectrum in the same geographical position, on the premise of ensuring the target transmission rate of the primary user, and further improve the utilization efficiency of the spectrum as far as possible. As the access method is based on cooperative communication, the nearer the distance from the cognitive network to the primary network is, the greater the network throughput can be achieved; and furthermore, a large-range network coverage can be realized, so the deficiencies in the existing cognitive radio access ways are made up.

摘要翻译： 本发明涉及一种基于协同中继的认知SIMO网络接入方法，其中认知基站收集网络中的信道响应，并判断认知用户是否可以与主用户协作以实现主用户所要求的目标传输速率， 如果是这样，则认证SIMO网络可以被许可给主用户的频带访问; 否则，认知SIMO网络是不可访问的。 在确保主用户的目标传输速率的前提下，访问方法可以使多个认知用户和主用户在相同地理位置同时使用相同的许可频谱，并进一步提高主用户的使用效率 频谱尽可能。 由于接入方式是基于协作通信，距离认知网络到主网络的距离越近，网络吞吐量越大; 此外，可以实现大范围的网络覆盖，从而弥补了现有的认知无线电接入方式的缺陷。

公开(公告)号：US5990446A

公开(公告)日：1999-11-23

申请号：US49191

申请日：1998-03-27

申请人： Yuming Zhang ,  Shaobin Zhang

发明人： Yuming Zhang ,  Shaobin Zhang

IPC分类号： B23K9/167 ,  B23K10/02

CPC分类号： B23K9/167 ,  B23K10/02

摘要： An improved method of arc welding uses a single power supply connected to opposed welding torches placed on both sides of a workpiece. Each torch is connected to a different polarity lead of the power supply and forms a separate arc with the workpiece. When a current is supplied to the first torch, it is guided from the first electrode, through the first arc, the workpiece, the second arc, and to the electrode of the second torch. This guiding function improves the penetration, concentration, as well as the directional stability of the arc. This permits the effective and efficient welding of relatively thick workpieces using existing equipment at low current levels.

摘要翻译： 一种改进的电弧焊接方法使用连接到放置在工件两侧的相对焊炬的单个电源。 每个割炬连接到电源的不同极性引线，并与工件形成一个单独的电弧。 当电流被提供给第一炬时，其从第一电极通过第一弧，工件，第二弧以及第二炬的电极被引导。 该引导功能提高了电弧的穿透度，浓度以及方向稳定性。 这允许使用现有设备以低电流水平有效和有效地焊接相对较厚的工件。

公开(公告)号：US09691612B2

公开(公告)日：2017-06-27

申请号：US14369780

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

IPC分类号： H01L21/02 ,  C23C16/26 ,  C23C16/01 ,  C23C16/02 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  C30B25/02 ,  C23C14/06

CPC分类号： H01L21/02614 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  C23C14/0605 ,  C23C16/01 ,  C23C16/0281 ,  C23C16/26 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02661 ,  H01L21/02664 ,  H01L29/1606

摘要： Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

公开(公告)号：US20140256120A1

公开(公告)日：2014-09-11

申请号：US14350282

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/32 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/56 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02664

摘要： A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C. -1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.

摘要翻译： 提供了一种基于与辅助金属膜退火的与Cl2反应制备石墨烯的方法，包括以下步骤：对Si衬底进行常规洗涤，然后将Si衬底放入CVD系统的反应室中并排空， 逐渐升温至950°C -1150°C，供应C3H8，并将Si衬底碳化3-10分钟; 将温度迅速升高至1150℃-1350℃，供应C3H8和SiH4，在碳化层上生长3C-SiC异质外延膜，然后在H2的保护下将温度降至环境温度，引入 将生长的3C-SiC的样品晶片加入石英管中，加热至700-1100℃，供应Ar和Cl2的混合气体，并使Cl2与3C-SiC反应以产生碳膜，涂覆碳膜样品晶片 在金属膜上，在900℃-1100℃退火10-30分钟以将碳膜重构成石墨烯; 并从石墨烯的样品晶片中取出金属膜，以获得大面积的石墨烯。 该方法获得的石墨烯面积大，表面光滑，连续性好，孔隙率低; 该产品可用于密封气体和液体。

公开(公告)号：US20140225472A1

公开(公告)日：2014-08-14

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

摘要翻译： 第一层钒掺杂PIN型核电池，包括从顶部到底部的放射性同位素源层（1），p型欧姆接触电极（4），SiO 2钝化层（2），SiO 2密实绝缘层 3），p型SiC外延层（5），n型SiC外延层（6），n型SiC衬底（7）和n型欧姆接触电极（8）。 p型SiC外延层（5）的掺杂密度为1×1019〜5×1019 cm3，n型SiC基板（7）的掺杂密度为1×1018〜7×1018 cm3。 n型SiC外延层（6）是通过注入钒离子而形成的低掺杂层I，其掺杂密度为1×1013〜5×1014cm3。 还提供了I型钒掺杂PIN型核电池的制备方法。 本发明解决了现有的SiC PIN型核电池的层I的掺杂浓度高的问题。