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公开(公告)号：US20170133559A1
公开(公告)日：2017-05-11
申请号：US15318143
申请日：2015-06-05
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Grigoriy Basin , Brendan Jude Moran , Hideo Kageyama
CPC classification number: H01L33/505 , H01L33/60 , H01L2224/16225 , H01L2224/97 , H01L2933/0041
Abstract: A lighting structure according to embodiments of the invention includes a semiconductor light emitting device and a flat wavelength converting element attached to the semiconductor light emitting device. The flat wavelength converting element includes a wavelength converting layer for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength. The flat wavelength converting element further includes a transparent layer. The wavelength converting layer is formed on the transparent layer.
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公开(公告)号：US20160240735A1
公开(公告)日：2016-08-18
申请号：US14783780
申请日：2014-03-31
Applicant: Koninklijke Philips N.V.
Inventor： Brendan Jude Moran , Marc Andre de Samber , Grigoriy Basin , Norbertus Antonius Maria Sweegers , Mark Melvin Butterworth , Kenneth Vampola , Clarisse Mazuir
IPC: H01L33/20 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/56 , H01L33/62 , H01L25/075 , H01L33/06 , H01L33/50
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/465 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0091
Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
Abstract translation: 本发明的实施例包括包含夹在n型区域和p型区域之间的发光层的半导体结构。 生长衬底附着于半导体结构。 生长衬底具有至少一个成角度的侧壁。 反射层设置在成角度的侧壁上。 从半导体结构和生长衬底提取的大部分光通过生长衬底的第一表面提取。
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3.发明申请公开(公告)号：US20160172554A1
公开(公告)日：2016-06-16
申请号：US14906256
申请日：2014-07-17
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Grigoriy Basin , Ashim Shatil Haque , Hideo Kageyama , Brendan Jude Moran , Jyoli Kiron Bhardwaj
CPC classification number: H01L33/58 , H01L25/0753 , H01L33/0079 , H01L33/0095 , H01L33/505 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2224/16225 , H01L2924/181 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066 , H01L2924/00012
Abstract: Intermediate removable placement and processing structures are provided to enable the formation of optical elements upon light emitting elements, including the formation of a reflective layer beneath the optical elements. These removable placement and processing structures are substantially independent of the particular dimensions of the produced light emitting device, allowing their re-use in a variety of applications. The resultant light emitting device includes the light emitting element,the optical element with reflector, and, optionally, a wavelength conversion material, but does not include remnants of the placement and processing structures, such as a carrier substrate.
Abstract translation: 提供中间可移动放置和处理结构以使得能够在发光元件上形成光学元件，包括在光学元件下方形成反射层。 这些可移动的放置和处理结构基本上独立于所生产的发光器件的特定尺寸，从而允许它们在各种应用中重新使用。 所得到的发光器件包括发光元件，具有反射器的光学元件和可选地的波长转换材料，但不包括放置和处理结构的残留物，例如载体衬底。
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Patent Agency Ranking
公开(公告)号：US10090444B2
公开(公告)日：2018-10-02
申请号：US15318143
申请日：2015-06-05
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Grigoriy Basin , Brendan Jude Moran , Hideo Kageyama
Abstract: A lighting structure according to embodiments of the invention includes a semiconductor light emitting device and a flat wavelength converting element attached to the semiconductor light emitting device. The flat wavelength converting element includes a wavelength converting layer for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength. The flat wavelength converting element further includes a transparent layer. The wavelength converting layer is formed on the transparent layer.
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公开(公告)号：US09871167B2
公开(公告)日：2018-01-16
申请号：US14783780
申请日：2014-03-31
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Brendan Jude Moran , Marc Andre de Samber , Grigoriy Basin , Norbertus Antonius Maria Sweegers , Mark Melvin Butterworth , Kenneth Vampola , Clarisse Mazuir
IPC: H01L33/46 , H01L25/075 , H01L33/20 , H01L33/44 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/00
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/465 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0091
Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
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公开(公告)号：US09660164B2
公开(公告)日：2017-05-23
申请号：US14798534
申请日：2015-07-14
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Frederic Stephane Diana , Yajun Wei , Stefano Schiaffino , Brendan Jude Moran
CPC classification number: H01L33/641 , H01L33/12 , H01L33/40 , H01L33/486 , H01L33/56 , H01L33/62 , H01L33/642 , H01L33/644 , H01L33/647 , H01L2924/0002 , H01L2924/00
Abstract: Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.
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公开(公告)号：US20160365487A1
公开(公告)日：2016-12-15
申请号：US15105096
申请日：2015-01-02
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： April Dawn Schricker , Kim Kevin Mai , Brendan Jude Moran
CPC classification number: H01L33/46 , H01L33/0095 , H01L33/486 , H01L33/505 , H01L33/56 , H01L33/60 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.
Abstract translation: 本发明的实施例包括包括基板和包括发光层的半导体结构的发光器件。 围绕发光器件的第一反射层。 波长转换元件设置在发光器件的上方。 第二反射层邻近波长转换元件的第一侧壁设置。
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公开(公告)号：US20160322540A1
公开(公告)日：2016-11-03
申请号：US15104196
申请日：2014-12-16
Applicant: KONINKLIJKE PHILIPS N.V.
Abstract: A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.
Abstract translation: 根据本发明的实施例的结构包括用于发射具有第一峰值波长的光的发光器件。 波长转换层设置在由发光器件发射的光的路径中。 波长转换层吸收由发光器件发射的光并发射具有第二峰值波长的光。 波长转换层包括波长转换材料，透明材料和粘合材料的混合物，其中粘合材料不超过波长转换层的重量的15％。
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