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公开(公告)号：US06734467B2
公开(公告)日：2004-05-11
申请号：US10137885
申请日：2002-05-03
IPC分类号： H01L2920
CPC分类号： H01L33/50 , H01L33/04 , H01L33/08 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.
摘要翻译： 描述了白光源，并且具有UV /蓝色发光半导体LED和设置有荧光体颗粒的嵌入化合物。 LED设置有多个发光区域，其被施加在公共基板上的层结构内。 通过半导体材料的组成或层厚度的不同选择，发光区域的发射最大值相对于彼此能量地失谐。
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公开(公告)号：US07306960B2
公开(公告)日：2007-12-11
申请号：US11311809
申请日：2005-12-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译： 本发明涉及包括发射有辐射的有源区和窗口层的发光二极管芯片。 为了提高发光效率，发射有源区域的横截面面积小于可用于解耦光的窗口层的横截面面积。 本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。
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公开(公告)号：US20060138439A1
公开(公告)日：2006-06-29
申请号：US11311809
申请日：2005-12-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译： 本发明涉及包括发射有辐射的有源区和窗口层的发光二极管芯片。 为了提高发光效率，发射有源区域的横截面面积小于可用于解耦光的窗口层的横截面面积。 本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。
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公开(公告)号：US07026657B2
公开(公告)日：2006-04-11
申请号：US10258154
申请日：2001-04-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译： 本发明涉及一种包括发射辐射有源区（32）和窗口层（2）的发光二极管芯片（1）。 为了提高发光效率，发射有源区域（32）的横截面面积小于可用于解耦光的窗口层（2）的横截面面积。 本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。
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公开(公告)号：US06891278B2
公开(公告)日：2005-05-10
申请号：US10644118
申请日：2003-08-20
IPC分类号： B01J19/00 , B01L3/00 , B01L7/00 , B81B7/00 , G01N30/02 , G01N30/30 , G01N30/60 , H01L23/38 , H01L27/16 , H01L35/00 , H01L35/28
CPC分类号： B01L7/52 , B01J19/0093 , B01J2219/00783 , B01J2219/00819 , B01J2219/00873 , B01J2219/00934 , B01J2219/00961 , B01J2219/00981 , B01L3/5027 , B01L2300/1822 , B81B7/0093 , G01N30/30 , G01N30/6095 , G01N2030/025 , G01N2030/303 , Y10S257/93
摘要： A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.
摘要翻译： 半导体部件具有通过耦合器件彼此热耦合的至少一个珀耳帖元件和至少一个热发生元件。 由于珀耳帖元件和热电偶元件通过耦合装置的热耦合，可以使用珀尔帖元件来冷却微结构，特别是光电子部件（例如激光二极管）。 因此，有效的温度调节和光电子部件的有效操作是可能的。
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公开(公告)号：US20050138934A1
公开(公告)日：2005-06-30
申请号：US10504649
申请日：2002-02-14
申请人： Martin Weigert , Axel Schubert , Franz Auracher , Karl-Heinz Schlereth , Gustav Muller , Hans-Ludwig Althaus
发明人： Martin Weigert , Axel Schubert , Franz Auracher , Karl-Heinz Schlereth , Gustav Muller , Hans-Ludwig Althaus
CPC分类号： G02B6/4201 , G02B6/4271 , H01L33/645 , H01L2224/48091 , H01L2924/10253 , H01L2924/19107 , H01S5/02415 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to an optoelectronic assembly having an optoelectronic or passive optical component and a cooling element for cooling the optoelectronic or passive optical component. According to the invention, the cooling element is a micropeltier cooler, wherein the component is arranged either directly thereon or a carrier substrate is arranged therebetween.
摘要翻译： 本发明涉及具有光电子或无源光学部件和用于冷却光电子或无源光学部件的冷却元件的光电组件。 根据本发明，冷却元件是一个微型毛细管冷却器，其中该部件直接设置在其上，或者一个载体基板被布置在其间。
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公开(公告)号：US06783284B2
公开(公告)日：2004-08-31
申请号：US10253220
申请日：2002-09-24
IPC分类号： G02B636
CPC分类号： H04B10/07957 , G01J9/00 , G02B6/2817 , G02B6/29317 , G02B6/4215 , G02B6/4246 , G02B6/4249 , G02B6/4263 , G02B6/4266 , H04J14/02
摘要： An optical for wavelength reference measurement has in essence an optical conductor with integrated fiber Bragg grating that has a transmission maximum at a desired wavelength. Arranged downstream of the fiber Bragg grating is a photoreceiver receiving the measuring radiation beam passing through the fiber Bragg grating. If desired, it is possible to use a beam splitter to produce a reference radiation beam that is detected in a further photoreceiver.
摘要翻译： 用于波长参考测量的光学本质上是具有集成光纤布拉格光栅的光导体，其具有在期望波长处的透射最大值。 布置在光纤布拉格光栅下游的光接收器接收通过光纤布拉格光栅的测量辐射束。 如果需要，可以使用分束器来产生在另一光接收器中检测的参考辐射束。
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8.发明授权Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser 有权具有横向电流传导的半导体激光器和用于制造半导体激光器的方法公开(公告)号：US06944199B2
公开(公告)日：2005-09-13
申请号：US10460823
申请日：2003-06-12
申请人： Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
发明人： Bruno Acklin , Martin Behringer , Karl Ebeling , Christian Hanke , Jörg Heerlein , Lutz Korte , Johann Luft , Karl-Heinz Schlereth , Werner Späth , Zeljko Spika
CPC分类号： H01S5/16 , H01S5/0421 , H01S5/168 , H01S5/2275
摘要： A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
摘要翻译： 半导体激光器具有半导体本体，其具有第一和第二主要区域，优选地各自设置有接触区域，以及第一和第二反射镜区域。 在主要区域之间形成有源层和载流层。 载流层具有至少一个带状电阻区域，其相对于谐振器轴线横向延伸，并且与邻近电阻区域的载流层的区域相比，至少部分区域的电阻率增加 。
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公开(公告)号：US06818470B1
公开(公告)日：2004-11-16
申请号：US09806424
申请日：2001-07-24
IPC分类号： H01L2716
摘要： Method for fabricating a thermoelectric converter having a plurality of series-connected thermoelement cells, which are connected in series with one another by means of a plurality of first electrical conductor tracks (3) and each of which has a first body (4) made of thermoelectric material of a first conduction type and a second body (5) made of thermoelectric material of a second conduction type. The thermoelement cells are fabricated by means of method steps appertaining to semiconductor technology.
摘要翻译： 一种用于制造具有多个串联连接的热电元件的热电转换器的方法，它们通过多个第一电导体轨道（3）彼此串联连接，并且每个具有第一主体（4），所述第一主体 第一导电类型的热电材料和由第二导电类型的热电材料制成的第二主体（5）。 通过与半导体技术相关的方法步骤制造热电偶电池。
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公开(公告)号：US06538302B1
公开(公告)日：2003-03-25
申请号：US09623622
申请日：2000-09-05
申请人： Karl-Heinz Schlereth
发明人： Karl-Heinz Schlereth
IPC分类号： H01L23544
CPC分类号： H01S5/02272 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/4025 , H01S2301/176
摘要： The invention relates to a semiconductor chip having a fracture sidewall (4) running at a lateral edge region, and having an electrically active layer (2) ending at the fracture sidewall, in which case at least one fracture-sidewall section which is assigned to the end of the active layer is provided with a passivation layer (10) covering said section. The invention furthermore relates to a method for fabricating such a semiconductor chip.
摘要翻译： 本发明涉及一种半导体芯片，其具有在横向边缘区域延伸的断裂侧壁（4），并且具有在断裂侧壁处终止的电活性层（2），在这种情况下，至少一个断裂侧壁部分被分配到 有源层的端部设置有覆盖所述部分的钝化层（10）。 本发明还涉及一种用于制造这种半导体芯片的方法。
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