公开(公告)号：US5523845A

公开(公告)日：1996-06-04

申请号：US378369

申请日：1995-01-25

申请人： Katsu Honzawa ,  Kazuhiro Atsumi ,  Humihiko Shimomura ,  Seiji Kawaguchi ,  Yuichiro Sakamoto ,  Hisaya Motojima ,  Masayuki Masuko ,  Tsuyoshi Hayakawa

发明人： Katsu Honzawa ,  Kazuhiro Atsumi ,  Humihiko Shimomura ,  Seiji Kawaguchi ,  Yuichiro Sakamoto ,  Hisaya Motojima ,  Masayuki Masuko ,  Tsuyoshi Hayakawa

IPC分类号： G01N21/63 ,  G01N1/00 ,  G01N21/15 ,  G01N21/17 ,  G01N35/10 ,  G01N21/11 ,  G01N21/64 ,  G01N21/65

CPC分类号： G01N21/15 ,  G01N2035/1062

摘要： The first branch 1a of the optical fiber 1 is connected to the light source 2, and the second branch 1b is connected to the optical measuring unit 3. A taper-shaped tip member 8 is fitted to a tip end of the optical fiber unit 1 with the use of a jig member 4. The inner hollow space 7 in the tip member 8 is connected with the air suction device 11, through the gap 5 formed between the optical fiber unit 1 and the jig member 4 and the air suction tube 10. The air suction device 11 discharges air from the inner hollow space 7 to suck liquid through the through-hole 6 into the inner hollow space. The air suction device 11 is controlled by the controller 12. Because the optical fiber unit can directly irradiate liquid with light, measurement can be performed with high sensitivity. The optical fiber unit is prevented from contamination.

摘要翻译： 光纤1的第一分支1a连接到光源2，第二分支1b连接到光学测量单元3.锥形尖端构件8装配到光纤单元1的末端 通过使用夹具构件4.通过形成在光纤单元1和夹具构件4之间的间隙5和吸气管10，尖端构件8中的内部中空空间7与吸气装置11连接 吸气装置11从内部中空空间7排出空气，通过通孔6将液体吸入内部中空空间。 吸气装置11由控制器12控制。由于光纤单元可以直接用光照射液体，因此可以以高灵敏度进行测量。 防止光纤单元的污染。

公开(公告)号：US20080102272A1

公开(公告)日：2008-05-01

申请号：US11902463

申请日：2007-09-21

申请人： Yuichiro Sakamoto ,  Koji Ishikawa

发明人： Yuichiro Sakamoto ,  Koji Ishikawa

IPC分类号： B32B7/12

CPC分类号： C08J5/18 ,  B32B27/08 ,  B32B27/306 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2270/00 ,  B32B2307/412 ,  B32B2307/54 ,  B32B2307/7163 ,  B32B2439/70 ,  C08J2367/04 ,  C08K5/103 ,  C08L23/0853 ,  C08L67/04 ,  Y10T428/2852 ,  C08L2666/06

摘要： The present invention relates to a wrapping film comprising, as at least one surface layer, a resin composition (D) layer comprising 0.5 to 5 parts by weight of an ethylene-vinyl acetate copolymer having a vinyl acetate content of 30 to 60% by weight (B) and 5 to 40 parts by weight of a liquid additive (C) based on 100 parts by weight of an aliphatic polyester resin (A).

摘要翻译： 本发明涉及一种包装膜，作为至少一个表面层，包含0.5-5重量份乙酸乙烯酯含量为30至60重量％的乙烯 - 乙酸乙烯酯共聚物的树脂组合物（D）层 （B）和5〜40重量份的液体添加剂（C），相对于100重量份脂肪族聚酯树脂（A）。

公开(公告)号：US07226655B2

公开(公告)日：2007-06-05

申请号：US10622571

申请日：2003-07-21

申请人： Masaru Iriya ,  Yuichiro Sakamoto

发明人： Masaru Iriya ,  Yuichiro Sakamoto

IPC分类号： B32B27/32 ,  B32B27/06 ,  B32B27/36

CPC分类号： B32B27/36 ,  Y10T428/13 ,  Y10T428/31786

摘要： A wrap film comprising a layer of resin composition (C) as at least one surface layer, wherein resin composition (C) comprises 100 parts by mass of an aliphatic polyester resin (A) and 5 to 40 parts by mass of a liquid additive (B), and having a surface roughness of 0.5 to 4.0 nm, a tensile modulus of 400 to 1500 MPa, a heat resistant temperature of 130° C. or more and cling energy of 0.5 to 2.5 mJ, and a wrap product having the wrap film placed in a box. There is provided an easy-to-use wrap film having cling property and pulling-out property.

摘要翻译： 一种包覆树脂组合物（C）作为至少一个表面层的保鲜膜，其中树脂组合物（C）包含100质量份脂族聚酯树脂（A）和5〜40质量份液体添加剂（ B），表面粗糙度为0.5〜4.0nm，拉伸弹性模量为400〜1500MPa，耐热温度为130℃以上，粘着能为0.5〜2.5mJ，带有包装的包装物 电影放在一个盒子里。 提供了具有附着性和拉出性的易于使用的保鲜膜。

公开(公告)号：US08387562B2

公开(公告)日：2013-03-05

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US07655570B2

公开(公告)日：2010-02-02

申请号：US11330336

申请日：2006-01-12

申请人： Akihiro Kikuchi ,  Yuichiro Sakamoto ,  Takashi Tsunoda

发明人： Akihiro Kikuchi ,  Yuichiro Sakamoto ,  Takashi Tsunoda

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

摘要翻译： 通过使用氮气作为蚀刻气体的一部分，可以减少涂覆的硅基绝缘膜与任何其它种类的硅基绝缘膜之间的蚀刻速率的差异。 因此，下面的膜可能不会长期暴露于蚀刻气体，从而可以防止下面的膜的劣化或劣化。

公开(公告)号：US20120006492A1

公开(公告)日：2012-01-12

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23F1/08

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20070287297A1

公开(公告)日：2007-12-13

申请号：US11689629

申请日：2007-03-22

申请人： Akihiro Kikuchi ,  Takashi Tsunoda ,  Yuichiro Sakamoto

发明人： Akihiro Kikuchi ,  Takashi Tsunoda ,  Yuichiro Sakamoto

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/31116 ,  H01J2237/2001 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139

摘要： A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

摘要翻译： 等离子体蚀刻方法包括以下步骤：通过使用从含有碳氟化合物气体，氢氟烃气体，稀有气体和O 2 O 2气体的处理气体产生的等离子体来蚀刻目标物体的硅层 并且通过使用图案化的抗蚀剂膜作为掩模。 目标物体包括主要成分为硅的硅层和形成在硅层上的图案化的抗蚀剂膜。

公开(公告)号：US20060154472A1

公开(公告)日：2006-07-13

申请号：US11330336

申请日：2006-01-12

申请人： Akihiro Kikuchi ,  Yuichiro Sakamoto ,  Takashi Tsunoda

发明人： Akihiro Kikuchi ,  Yuichiro Sakamoto ,  Takashi Tsunoda

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

摘要翻译： 通过使用氮气作为蚀刻气体的一部分，可以减少涂覆的硅基绝缘膜与任何其它种类的硅基绝缘膜之间的蚀刻速率的差异。 因此，下面的膜可能不会长期暴露于蚀刻气体，从而可以防止下面的膜的劣化或劣化。

公开(公告)号：US08488622B2

公开(公告)日：2013-07-16

申请号：US12629413

申请日：2009-12-02

申请人： Yuichiro Sakamoto ,  Hisayuki Ojima

发明人： Yuichiro Sakamoto ,  Hisayuki Ojima

IPC分类号： H04J15/00

CPC分类号： H04J3/076 ,  H04J3/1652

摘要： A jitter control apparatus used in a multiplexing apparatus multiplexing a plurality of signals by asynchronous mapping, includes: a detection unit configured to detect a frequency of timing compensation processes in the asynchronous mapping for each of the plurality of signals; and a selection unit configured to select, on basis of a detection result by the detection unit, a clock signal to be used as a carrier clock for the plurality of signals, from a plurality of clock signals including clock signals extracted from at least one of the plurality of signals.

摘要翻译： 一种抖动控制装置，用于通过异步映射复用多个信号的多路复用装置，包括：检测单元，被配置为检测所述多个信号中的每个信号的异步映射中的定时补偿处理的频率; 以及选择单元，被配置为根据检测单元的检测结果，从包括从以下各项中提取的时钟信号的多个时钟信号中选择要用作多个信号的载波时钟的时钟信号： 多个信号。

公开(公告)号：US08056503B2

公开(公告)日：2011-11-15

申请号：US10483251

申请日：2002-07-02

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。