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公开(公告)号：US06820591B2
公开(公告)日：2004-11-23
申请号：US10754555
申请日：2004-01-12
IPC分类号： F02P500
CPC分类号： F02D13/0261 , F01L1/34 , F01L2800/00 , F02D35/027 , F02D41/006 , F02D41/1406 , F02D2041/001 , F02M26/01 , F02M26/47 , F02M26/48 , F02M69/044 , F02P5/1523 , Y02T10/18 , Y02T10/42 , Y02T10/46 , Y02T10/47
摘要： An upper limit guard is set for a valve overlap amount according to a KCS learning value used to retard-correct an ignition timing in order to suppress knock, and an engine load. As a result, it is possible to make the upper limit guard value a value able to restrict the valve overlap amount to a value equal to, or less than, a value at which an internal EGR amount does not become excessive during a retard-correction of the ignition timing. By applying the upper limit guard to the valve overlap amount using the upper limit guard value, it is possible to suppress the valve overlap amount from increasing from the optimum value following a retard-correction of the ignition timing, as well as suppress the value of overlap amount from being reduced when it is not deviating from the optimum value and is below the upper limit guard value.
摘要翻译： 根据用于阻止点火正时的KCS学习值以抑制爆震和发动机负荷，设定阀重叠量的上限保护装置。 结果，可以使上限保护值为能够将阀重叠量限制在等于或小于在延迟校正期间内部EGR量不会过大的值的值 的点火正时。 通过使用上限保护值将上限保护装置应用于阀重叠量，可以抑制阀重叠量从点火正时的延迟修正后的最佳值增加，并且抑制 当不偏离最佳值并且低于上限保护值时，重叠量减小。
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公开(公告)号：US20140291994A1
公开(公告)日：2014-10-02
申请号：US14345474
申请日：2011-09-26
申请人： Takahiko Hirasawa , Masashi Yoshimi
发明人： Takahiko Hirasawa , Masashi Yoshimi
IPC分类号： H02P9/04
CPC分类号： B60W20/10 , B60L1/00 , B60L1/006 , B60L9/00 , B60L11/1859 , B60L11/1861 , B60L2240/36 , B60L2240/54 , B60L2250/10 , B60L2250/16 , B60L2250/30 , B60L2260/12 , B60L2260/16 , B60R16/03 , B60W10/30 , B60W50/14 , H02P9/04 , Y02T10/7005 , Y02T10/7044 , Y02T10/705
摘要： A vehicle includes a feeding system supplying an electric power to an external device disposed outside the vehicle, a controller controlling the operation of the feeding system, and an information output unit outputting predetermined information. The controller performs the processing of determining whether or not feeding can be performed from the feeding system to the external device. When the feeding from the feeding system to the external device is prohibited, the controller causes the information output unit to output prohibition information about the prohibition of the feeding including the contents of a determination processing.
摘要翻译： 车辆包括向设置在车辆外部的外部装置提供电力的馈送系统，控制馈送系统的操作的控制器和输出预定信息的信息输出单元。 控制器执行确定是否可以从馈送系统向外部设备执行馈送的处理。 当禁止从进给系统进给到外部装置时，控制器使信息输出单元输出关于禁止进给的禁止信息，包括确定处理的内容。
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公开(公告)号：US08676418B2
公开(公告)日：2014-03-18
申请号：US13159160
申请日：2011-06-13
申请人： Masashi Yoshimi
发明人： Masashi Yoshimi
IPC分类号： B60L9/00
CPC分类号： B60W20/00 , B60K6/48 , B60L11/12 , B60L2250/16 , B60W10/30 , B60W50/06 , B60W50/082 , B60W50/14 , B60W2050/146 , B60W2510/244 , Y02T10/6221 , Y02T10/7077 , Y02T10/92 , Y10T477/23 , Y10T477/26 , Y10T477/33
摘要： A control for a hybrid vehicle includes; obtaining information that an EV switch that is operated when a travel of the vehicle in an EV mode in which priority is given to an EV travel in which the vehicle travels by a motive power only from a rotary electric machine is to be selected has been operated; starting a permission preparation control for causing a transition from a state in which a situation of the vehicle satisfies a predetermined reservation condition for reserving the EV mode to a state in which the situation of the vehicle satisfies a predetermined permission condition for permitting the EV mode if the situation of the vehicle does not satisfy the permission condition but satisfies the reservation condition when the EV switch has been operated; and enabling to control the travel of the vehicle in the EV mode if the predetermined permission condition is satisfied.
摘要翻译： 混合动力车辆的控制包括： 获取信息，即当EV被选择优先给予车辆行驶的EV行驶的EV行驶中的车辆行驶时，操作的EV开关被操作，该车辆行驶通过来自旋转电机的动力行驶。 ; 开始许可准备控制，以从车辆的状况满足预定EV模式的预定条件的状态转变到车辆的状况满足允许EV模式的预定允许条件的状态，如果 车辆的情况不满足允许条件，但满足EV切换已经运行时的预约条件; 并且如果满足预定允许条件，则能够控制车辆在EV模式中的行驶。
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公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。
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公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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公开(公告)号：US06187150B1
公开(公告)日：2001-02-13
申请号：US09414092
申请日：1999-10-07
申请人： Masashi Yoshimi , Kenji Yamamoto
发明人： Masashi Yoshimi , Kenji Yamamoto
IPC分类号： C23C1408
CPC分类号： H01L31/1884 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.
摘要翻译： 一种薄膜光伏器件的制造方法，其特征在于，在基板上依次形成有透明导电膜，薄膜光电单元，背面透明导电膜和背面金属电极，其中，所述背面透明导电膜通过溅射形成 包括在初始阶段在5×10 -2 Torr以上的压力下形成初始背面透明导电膜1〜30秒的步骤，并且在压力降低到{部分（1）的情况下形成剩余厚度的主背面透明导电膜 / 10）}初始压力或更小。
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7.发明授权公开(公告)号：US08681457B2
公开(公告)日：2014-03-25
申请号：US13258660
申请日：2009-04-23
CPC分类号： B60W20/10 , B60K1/02 , B60K6/365 , B60K6/445 , B60L3/003 , B60L3/0046 , B60L3/0069 , B60L3/0092 , B60L11/123 , B60L11/14 , B60L11/1816 , B60L2210/14 , B60L2220/14 , B60W10/26 , B60W20/00 , H01H47/002 , Y02T10/6217 , Y02T10/6239 , Y02T10/6269 , Y02T10/7005 , Y02T10/7072 , Y02T10/7077 , Y02T10/7225 , Y02T90/127 , Y02T90/14
摘要： Relays are inserted and connected between a battery and a boosting converter, and other relays are inserted and connected between another battery and another boosting converter. A controller outputs control signals that control opening/closing of the relays. When short-circuit of a switching element occurs in the boosting converters, the controller controls turning-off of the relays such that at least one of order and timing of turning off the relays is changed depending on which of the switching elements is short-circuited.
摘要翻译： 继电器插入并连接在电池和升压转换器之间，其他继电器插入并连接在另一个电池和另一个升压转换器之间。 控制器输出控制继电器开/关的控制信号。 当升压转换器中发生开关元件的短路时，控制器控制继电器的关断，使得关断继电器的顺序和定时中的至少一个根据哪个开关元件短路而改变 。
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公开(公告)号：US20130317715A1
公开(公告)日：2013-11-28
申请号：US13983105
申请日：2011-02-04
申请人： Keiji Kaita , Nobuyuki Tanaka , Masaya Amano , Koji Hokoi , Masashi Yoshimi , Takeshi Hoshiba , Takahiko Hirasawa
发明人： Keiji Kaita , Nobuyuki Tanaka , Masaya Amano , Koji Hokoi , Masashi Yoshimi , Takeshi Hoshiba , Takahiko Hirasawa
IPC分类号： F16H61/12
CPC分类号： F16H61/12 , F16H59/105 , F16H2061/1284 , F16H2061/168
摘要： An ECU determines whether or not there is an abnormality (shift pattern abnormality) in a combination of shift signals provided from a shift position sensor. After occurrence of the shift pattern abnormality is determined, the ECU determines whether or not a first condition that a shift pattern changes into a normal pattern of a drive range is satisfied, and whether or not a second condition that a vehicle is running (a driver has an intention to cause the vehicle to run) is satisfied. When occurrence of the shift pattern abnormality is determined, the ECU stops generation of driving force of the vehicle and prohibits switching to the drive range. When the above-mentioned first condition and second condition are satisfied after occurrence of the shift pattern abnormality is determined, the ECU switches the shift range to the drive range indicated by the shift pattern and recovers the driving force.
摘要翻译： ECU根据从换档位置传感器提供的换档信号的组合，判定是否存在异常（换档模式异常）。 在确定了发生换档模式异常之后，ECU判定是否满足了换档方式变为驱动范围的正常模式的第一状态，以及车辆是否正在行驶的第二状态（驾驶员 意图使车辆行驶）满足。 当发生换档模式异常时，ECU停止生成车辆的驱动力并禁止切换到驱动范围。 当确定发生换档模式异常之后满足上述第一条件和第二条件时，ECU将换档范围切换到由换档模式指示的驱动范围并恢复驱动力。
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公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译： 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。
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公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译： 在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层 从光线一方的命令。 在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物 至少在其一部分。 硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分 。
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