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公开(公告)号：US4677341A
公开(公告)日：1987-06-30
申请号：US703999
申请日：1985-02-21
CPC分类号： H01J29/74 , H01J31/502
摘要： A synchronous scan streaking device comprising a photoelectric layer, an electronic lens, an anode with an aperture, a pair of deflection electrodes, and a phosphor layer arranged in order within a vacuum envelope. A deflection voltage at the same frequency as the repetition rate of the light pulses incident on the phosphor layer to be measured is fed from deflection voltage generation means to the deflection electrodes so as to repetitively generate an enhanced image of the incident light on the phosphor layer. At least one shielding metal structure which is connected to the common potential source is arranged in the space between the deflection electrode plate and the wall of the envelope, and surrounding a deflection electrode plate lead provided to connect the deflection electrode plate through the envelope to the deflection voltage generation means.
摘要翻译： 一种同步扫描条纹装置，包括光电层，电子透镜，具有孔的阳极，一对偏转电极和在真空外壳内依次布置的荧光体层。 入射到待测荧光体层上的光脉冲的重复频率的相同频率的偏转电压从偏转电压产生装置馈送到偏转电极，以便在荧光体层上反复产生入射光的增强图像 。 连接到公共电位源的至少一个屏蔽金属结构被布置在偏转电极板和外壳的壁之间的空间中，并且围绕设置成将偏转电极板通过外壳连接到偏转电极板引线的偏转电极板引线 偏转电压产生装置。
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公开(公告)号：US5805316A
公开(公告)日：1998-09-08
申请号：US705971
申请日：1996-08-30
CPC分类号： G03H1/22 , G03H1/0443 , G03H2001/0088 , G03H2001/0463 , G03H2001/262 , G03H2225/20 , G03H2225/33 , G03H2225/60
摘要： The twin-image elimination apparatus of the present invention comprises (a) a scanning light source for emitting a scanning light beam; (b) an interference device which converts the scanning light beam from the scanning light source into a spherical wave and a plane wave having temporal frequencies different from each other and combines the spherical and plane waves together; (c) a scanner for scanning an object with the combined light beam from the interference device; (d) a photodetector for detecting a scattered wave from the object; (e) a first multiplier which converts an output signal of the photodetector into a cosine-coded holographic information; (f) a second multiplier which converts the output signal of the photodetector into a sine-coded holographic information; and (g) a holographic reconstruction device which converts output signals of the first and second multipliers into a sum signal, in which these output signals are added together with a phase difference of .pi./2+2n.pi. (wherein n is an integer not less than 0), so as to reproduce an image of the object without the presence of its twin image. Hence, at the time of reconstructing a hologram, the virtual image component contained in the output signal of the photodetector can be removed, thereby improving the image quality of the reconstructed image.
摘要翻译： 本发明的双图像消除装置包括：（a）用于发射扫描光束的扫描光源; （b）将来自扫描光源的扫描光束转换为球面波的干涉装置和具有彼此不同的时间频率的平面波，并将球面和平面波组合在一起; （c）用来自干涉装置的组合光束扫描物体的扫描仪; （d）用于检测来自物体的散射波的光检测器; （e）将所述光电检测器的输出信号转换为余弦编码的全息信息的第一乘法器; （f）将光电检测器的输出信号转换为正弦编码的全息信息的第二乘法器; 和（g）将第一和第二乘法器的输出信号转换为和信号的全息重建装置，其中这些输出信号以pi / 2 + 2n pi的相位差加在一起（其中n是不小于整数的整数） 比0），以便在没有其双重图像的情况下再现对象的图像。 因此，在重建全息图时，可以去除包含在光电检测器的输出信号中的虚拟图像分量，从而提高重建图像的图像质量。
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公开(公告)号：US5064257A
公开(公告)日：1991-11-12
申请号：US505605
申请日：1990-04-06
申请人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
发明人： Kazunori Shinoda , Ming H. Wu , Yoshiji Suzuki , Ting-Chung Poon
CPC分类号： G03H1/10 , G03H1/00 , G03H2001/0088 , G03H2001/0463 , G03H2225/20
摘要： There is disclosed an optical heterodyne scanning holography device capable of recording and reconstructing a holographic image of an object in real time by optical heterodyne-scanning the object, capturing a scattered wave from the object by a photodetector, and converting a heterodyne output current from the photodetector to a spatial light modulator for coherent processing optically.
摘要翻译： 公开了一种光学外差扫描全息装置，其能够通过光学外差扫描物体实时记录和重建物体的全息图像，通过光电检测器从物体捕获散射波，并将外差输出电流从 光电探测器用于空间光调制器，用于光学相干处理。
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公开(公告)号：US08855160B2
公开(公告)日：2014-10-07
申请号：US13512595
申请日：2010-11-29
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。
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公开(公告)号：US5844931A
公开(公告)日：1998-12-01
申请号：US903881
申请日：1997-07-31
CPC分类号： H01S5/2231 , H01S5/16 , H01S5/168 , H01S5/22 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
摘要翻译： 半导体激光器，不会由于电涌而引起突然的故障。 由GaAs缓冲层形成的脊，与GaAs衬底晶格匹配的n-InGaP包层，应变量子阱有源层，与GaAs衬底晶格匹配的p-InGaP包层 在n-GaAs衬底上埋设n-InGaP电流型p型GaAs波导层，与GaAs衬底晶格匹配的p-InGaP包覆层和p-GaAs覆盖层， 阻挡层。 器件条纹由器件中的电流注入区域和小面附近的电流非注入区域构成。
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公开(公告)号：US20100215063A1
公开(公告)日：2010-08-26
申请号：US12686637
申请日：2010-01-13
申请人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
发明人： Xin GAO , Hiroyuki Ohashi , Kazunori Shinoda , Hiroshi Okamoto , Masayuki Saitoh
IPC分类号： H01S3/11
CPC分类号： H01S3/1118 , H01S3/0604 , H01S3/0627 , H01S3/09415 , H01S3/10092 , H01S3/1611 , H01S3/1618 , H01S3/1643 , H01S3/2308
摘要： The pulse laser light source 1 is provided with an excitation light source 10, lenses 11 through 13, a dichroic mirror 14, an amplifier medium 21, a first reflection portion 22, a laser medium 23, a third reflection portion 24, a saturable absorber 25 and a second reflection portion 26. The reflection portion 22 and the reflection portion 26 compose a laser resonator having the laser medium 23, the reflection portion 24 and the saturable absorber 25 on a resonance path. Further, the amplifier medium 21, the reflection portion 22, the laser medium 23, the reflection portion 24, the saturable absorber 25 and the reflection portion 26 are disposed in order and are integrated with each other. Therefore, the pulse laser light source 1 is able to output pulse laser light of high energy with a short pulse width.
摘要翻译： 脉冲激光光源1设置有激发光源10，透镜11至13，分色镜14，放大器介质21，第一反射部22，激光介质23，第三反射部24，可饱和吸收体 25和第二反射部分26.反射部分22和反射部分26在谐振路径上组成具有激光介质23，反射部分24和可饱和吸收体25的激光谐振器。 此外，放大器介质21，反射部分22，激光介质23，反射部分24，可饱和吸收器25和反射部分26依次布置并且彼此一体化。 因此，脉冲激光光源1能够以短脉冲宽度输出高能量的脉冲激光。
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公开(公告)号：US07738521B2
公开(公告)日：2010-06-15
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译： 超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实 在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻 高。
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公开(公告)号：US07542208B2
公开(公告)日：2009-06-02
申请号：US11578067
申请日：2005-04-13
申请人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
发明人： Xin Gao , Hiroyuki Ohashi , Kazunori Shinoda
CPC分类号： G02B19/0057 , G02B19/0028 , G02B27/0977 , G02B27/143
摘要： A beam-condensing unit has a first light source, a second light source, and a condenser mirror. The first and second light sources output a plurality of first and second light fluxes arrayed along a first direction, respectively. A condenser mirror has first and second optical plates that intersect with each other. The first optical plate includes a plurality of first reflecting portions that are arrayed along the first direction and reflect the first light fluxes, respectively. The second optical plate includes a plurality of second reflecting portions that are arrayed along the first direction alternately with the first reflecting portions and reflect the second light fluxes, respectively.
摘要翻译： 光束聚光单元具有第一光源，第二光源和聚光镜。 第一和第二光源分别输出沿着第一方向排列的多个第一和第二光束。 聚光镜具有彼此相交的第一和第二光学板。 第一光学板包括沿着第一方向排列并分别反射第一光束的多个第一反射部分。 第二光学板包括多个第二反射部分，它们沿着第一方向与第一反射部分交替排列并分别反射第二光束。
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公开(公告)号：US20080144683A1
公开(公告)日：2008-06-19
申请号：US11679349
申请日：2007-02-27
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译： 其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。 本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。
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公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译： 集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。 在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。 在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。
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