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    Thin film forming apparatus and method of forming thin film of compound by using the same
    1.
    发明授权
    Thin film forming apparatus and method of forming thin film of compound by using the same 有权
    薄膜形成装置及其制作方法

    公开(公告)号：US06238527B1

    公开(公告)日：2001-05-29

    申请号：US09162725

    申请日：1998-09-30

    申请人： Kazuho Sone ,  Nobumasa Suzuki

    发明人： Kazuho Sone ,  Nobumasa Suzuki

    IPC分类号： C23C1434

    CPC分类号： H01J37/32192 ,  C23C14/0047 ,  C23C14/0068 ,  G02B1/10 ,  H01J37/3405

    摘要： A film forming apparatus for forming a minute thin film at a high depositing rate, which comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a gas supply means for supplying a sputtering gas for sputtering the target into a reaction chamber, and an electric power supply means for supplying an electric power for causing an electric discharge between the target and the substrate, wherein a partition member having a plurality of openings provided between the target and the substrate, and wherein means for supplying a reaction gas and a microwave are provided in a space between the partition member and the substrate.

    摘要翻译： 一种用于以高沉积速率形成微小薄膜的成膜装置，其包括用于保持基板的基板保持装置，用于保持靶材的目标保持装置，用于将用于溅射靶材的溅射气体供应到气体供应装置 反应室，以及用于提供用于在靶和基板之间进行放电的电力的电力供给装置，其中，具有设置在靶和基板之间的多个开口的分隔构件，并且其中， 反应气体和微波设置在分隔构件和基板之间的空间中。

    Plasma nitriding method
    4.
    发明申请
    Plasma nitriding method 审中-公开
    等离子氮化方法

    公开(公告)号：US20050196973A1

    公开(公告)日：2005-09-08

    申请号：US11071246

    申请日：2005-03-04

    申请人： Nobumasa Suzuki ,  Hideo Kitagawa

    发明人： Nobumasa Suzuki ,  Hideo Kitagawa

    IPC分类号： H01L21/318 ,  H01L21/4763

    CPC分类号： H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3115

    摘要： Disclosed is a plasma nitriding method by which an ultra-thin oxide-nitride film having a half-value depth of not greater than 0.8 nm can be produced, overcoming various inconveniences involved in conventional plasma nitriding methods. In one preferred form of the present invention, the plasma nitriding method includes the steps of introducing a substrate to be processed, into a reaction chamber, evacuating the reaction chamber, supplying a gas containing nitrogen atoms, into the reaction chamber at a predetermined flow rate, adjusting an exhaust conductance to maintain a predetermined pressure inside the reaction chamber, and applying an electric voltage into the reaction chamber to produce plasma to thereby cause nitriding of the surface of the substrate, wherein the gas further contains hydrogen atoms, wherein the predetermined pressure is not less than 2 Torr, and wherein a spacing between the substrate and a densest portion of the plasma is not less than 75 nm.

    摘要翻译： 公开了一种等离子体氮化方法，其可以生产半值深度不大于0.8nm的超薄氧化物氮化物膜，以克服常规等离子体氮化方法中涉及的各种不便。 在本发明的一个优选形式中，等离子体氮化方法包括以下步骤：将预处理的基材以预定的流速引入反应室，将反应室抽空，将含有氮原子的气体供给反应室 调节排气电导以维持反应室内的预定压力，并向反应室施加电压以产生等离子体，从而导致衬底表面渗氮，其中气体还含有氢原子，其中预定压力 不小于2Torr，并且其中衬底和等离子体最稠密部分之间的间隔不小于75nm。

    Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
    5.
    发明授权
    Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method 失效
    具有微波施加器的等离子体处理装置具有环形波导和处理方法

    公开(公告)号：US06497783B1

    公开(公告)日：2002-12-24

    申请号：US09082006

    申请日：1998-05-20

    申请人： Nobumasa Suzuki ,  Manabu Matsuo ,  Hirohisa Oda

    发明人： Nobumasa Suzuki ,  Manabu Matsuo ,  Hirohisa Oda

    IPC分类号： H01L213065

    CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274

    摘要： A plasma processing apparatus is disclosed which comprises a container which can be evacuated; a gas supply means for supplying a gas to the inside of the container; and a microwave supply means for supplying microwaves to generate a plasma in the container, the plasma being utilized to process an article, wherein the microwave supply means is a microwave applicator which is provided with an annular waveguide having a planar H-plane with a plurality of slots provided apart from each other and a rectangular cross section perpendicular to the traveling direction of microwaves and which supplies microwaves to the inside of the container through a dielectric window of the container from the plurality of slots provided in the planar H-plane, and wherein the gas supply means is provided a gas emission port through which the gas is emitted toward the planar H-plane.

    摘要翻译： 公开了一种等离子体处理装置，其包括可被抽空的容器; 用于将气体供给到容器内部的气体供给装置; 以及用于提供微波以在容器中产生等离子体的微波提供装置，用于处理物品的等离子体，其中微波提供装置是微波施加器，其具有带有多个平面H平面的环形波导 相互间隔设置的槽和垂直于微波行进方向的矩形截面，并且通过设置在平面H平面中的多个狭槽通过容器的电介质窗口将微波供应到容器的内部，以及 其中，所述气体供给装置设置有气体排出口，气体朝向所述平面H平面发射。

    PLASMA PROCESSING APPARATUS AND METHOD
    10.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
    等离子体加工设备和方法

    公开(公告)号：US20090275209A1

    公开(公告)日：2009-11-05

    申请号：US12139902

    申请日：2008-06-16

    申请人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

    发明人： Shinzo Uchiyama ,  Nobumasa Suzuki ,  Hideo Kitagawa ,  Yusuke Fukuchi

    IPC分类号： H01L21/46 ,  C23C16/511

    CPC分类号： H01L21/28185 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32733 ,  H01L21/28202 ,  H01L29/518

    摘要： Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

    摘要翻译： 公开了一种等离子体处理装置和等离子体处理方法，通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。 具体地，当在反应容器中处理基板时，反应容器内部的气体压力增加。 或者，等离子体处理部分和基板之间的距离增大，或者基板在时间上移动到反应容器的外部。 作为另一替代方案，快门设置在等离子体产生区域和基板之间。 利用该程序，从等离子体生产开始的预定时间段，可以基本上截断等离子体在基板上的离子的入射。