公开(公告)号：US07905149B2

公开(公告)日：2011-03-15

申请号：US12175347

申请日：2008-07-17

申请人： Kengo Suzuki ,  Takeshi Harada ,  Yasuo Osone ,  Masahide Hayashi ,  Teruhisa Akashi

发明人： Kengo Suzuki ,  Takeshi Harada ,  Yasuo Osone ,  Masahide Hayashi ,  Teruhisa Akashi

IPC分类号： G01B7/16

CPC分类号： G01P15/0802 ,  B81B2207/096 ,  B81C1/00301 ,  G01C19/5719

摘要： There is provided a physical sensor which ensures long-term reliability and can be miniaturized and increased in density, and a method of producing the same. A physical sensor includes a supporting substrate, an element substrate that includes a sensor element and is joined to the supporting substrate through an insulating layer, a glass cap that covers an area of the sensor element and is joined to the element substrate, and a built-in electrode that is electrically connected to the sensor element. The built-in electrode is formed in a through hole passing through the element substrate, the insulating layer and the supporting substrate. A portion of the glass cap that covers an area of the built-in electrode is anodically bonded to the element substrate.

摘要翻译： 提供了一种物理传感器，其确保了长期可靠性并且可以小型化和增加密度，以及其制造方法。 物理传感器包括支撑基板，包括传感器元件并通过绝缘层与支撑基板接合的元件基板，覆盖传感器元件的区域并与元件基板接合的玻璃盖，以及内置 电连接到传感器元件。 内置电极形成在穿过元件基板，绝缘层和支撑基板的通孔中。 覆盖内置电极的区域的玻璃帽的一部分阳极接合到元件基板。

公开(公告)号：US20090020419A1

公开(公告)日：2009-01-22

申请号：US12175347

申请日：2008-07-17

申请人： Kengo SUZUKI ,  Takeshi Harada ,  Yasuo Osone ,  Masahide Hayashi ,  Teruhisa Akashi

发明人： Kengo SUZUKI ,  Takeshi Harada ,  Yasuo Osone ,  Masahide Hayashi ,  Teruhisa Akashi

IPC分类号： G01N27/30

CPC分类号： G01P15/0802 ,  B81B2207/096 ,  B81C1/00301 ,  G01C19/5719

摘要： There is provided a physical sensor which ensures long-term reliability and can be miniaturized and increased in density, and a method of producing the same. A physical sensor includes a supporting substrate, an element substrate that includes a sensor element and is joined to the supporting substrate through an insulating layer, a glass cap that covers an area of the sensor element and is joined to the element substrate, and a built-in electrode that is electrically connected to the sensor element. The built-in electrode is formed in a through hole passing through the element substrate, the insulating layer and the supporting substrate. A portion of the glass cap that covers an area of the built-in electrode is anodically bonded to the element substrate.

摘要翻译： 提供了一种物理传感器，其确保了长期可靠性并且可以小型化和增加密度，以及其制造方法。 物理传感器包括支撑基板，包括传感器元件并通过绝缘层与支撑基板接合的元件基板，覆盖传感器元件的区域并与元件基板接合的玻璃盖，以及内置 电连接到传感器元件。 内置电极形成在穿过元件基板，绝缘层和支撑基板的通孔中。 覆盖内置电极的区域的玻璃帽的一部分阳极接合到元件基板。

公开(公告)号：US08937390B2

公开(公告)日：2015-01-20

申请号：US14199078

申请日：2014-03-06

申请人： Nae Hisano ,  Shigeo Ohashi ,  Yasuo Osone ,  Yasuhiro Naka ,  Hiroyuki Tenmei ,  Kunihiko Nishi ,  Hiroaki Ikeda ,  Masakazu Ishino ,  Hideharu Miyake ,  Shiro Uchiyama

发明人： Nae Hisano ,  Shigeo Ohashi ,  Yasuo Osone ,  Yasuhiro Naka ,  Hiroyuki Tenmei ,  Kunihiko Nishi ,  Hiroaki Ikeda ,  Masakazu Ishino ,  Hideharu Miyake ,  Shiro Uchiyama

IPC分类号： H01L23/48 ,  H01L23/02 ,  H01L23/00 ,  H01L23/31 ,  H01L23/473 ,  H01L23/34

CPC分类号： H01L24/14 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/473 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00

摘要： A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.

摘要翻译： 半导体器件包括安装基板，设置在所述安装基板上方的半导体元件，设置在所述安装基板上方的封装基板，其间具有所述半导体元件，并通过主连接凸块与所述半导体元件电连接;冷却所述半导体 液体制冷剂的热接收部分设置在所述半导体元件和所述安装基板之间，以及设置在所述封装基板和所述安装基板之间的多个次级连接凸块。

公开(公告)号：US20100032720A1

公开(公告)日：2010-02-11

申请号：US12579975

申请日：2009-10-15

申请人： Satoshi SASAKI ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

发明人： Satoshi SASAKI ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

IPC分类号： H01L27/082 ,  H01L23/52

CPC分类号： H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

摘要翻译： 提供了允许半导体器件的热阻降低和小型化的技术。 半导体器件具有多个单位晶体管Q，每个具有单位晶体管Q的第一数量（例如七个）的晶体管形成区域3a，3b和3e以及每个具有第二数量的晶体管形成区域3c和3d（例如， ，四个）单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

公开(公告)号：US07622756B2

公开(公告)日：2009-11-24

申请号：US11319084

申请日：2005-12-28

申请人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

发明人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

IPC分类号： H01L27/082 ,  H01L27/102

CPC分类号： H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.

摘要翻译： 提供了允许半导体器件的热阻降低和小型化的技术。 半导体器件具有多个单位晶体管Q，每个具有第一数量（7）的单位晶体管Q的晶体管形成区域3a，3b和3e，以及每个具有第二数量（4）的晶体管形成区域3c和3d 单位晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，并且第一数量大于第二数量。

公开(公告)号：US07583163B2

公开(公告)日：2009-09-01

申请号：US11891368

申请日：2007-08-10

申请人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

发明人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

IPC分类号： H03H9/00 ,  H03H9/205 ,  H01L41/08

CPC分类号： H03H3/04 ,  H03H9/564 ,  H03H9/589 ,  H03H2003/025

摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

摘要翻译： 提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。 在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。 例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的， 并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

公开(公告)号：US06452261B1

公开(公告)日：2002-09-17

申请号：US09380645

申请日：1999-09-07

申请人： Hironori Kodama ,  Masahiro Nagasu ,  Hirokazu Inoue ,  Yasuo Osone ,  Shigeta Ueda ,  Kazuji Yamada

发明人： Hironori Kodama ,  Masahiro Nagasu ,  Hirokazu Inoue ,  Yasuo Osone ,  Shigeta Ueda ,  Kazuji Yamada

IPC分类号： H01L2348

CPC分类号： H01L25/112 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

摘要翻译： 从控制电极引出的内置在平坦封装中的多个芯片的控制电极布线以及为了使控制电极布线与主电极布线绝缘而设置的绝缘构件也具有将各个半导体芯片定位在 扁平包装。 此外，一体式控制电极布线网被容纳在封装的公共电极中，并且从各个半导体芯片的控制电极引出的电极连接到网以简化大量栅极的处理 信号线。

公开(公告)号：US20070176298A1

公开(公告)日：2007-08-02

申请号：US11652235

申请日：2007-01-10

申请人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

发明人： Yasuo Osone ,  Kenya Kawano ,  Chiko Yorita ,  Yu Hasegawa ,  Yuji Shirai ,  Naotaka Tanaka ,  Seiichi Tomoi ,  Hiroshi Okabe

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L23/3677 ,  H01L23/3121 ,  H01L23/34 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2223/6644 ,  H01L2223/6688 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1515 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/48237 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.

摘要翻译： 发热时刻不同的加热元件层叠在堆叠状态，允许靠近布线基板的加热元件用作另一个加热元件的热​​扩散板。

公开(公告)号：US20060138460A1

公开(公告)日：2006-06-29

申请号：US11319084

申请日：2005-12-28

申请人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

发明人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

IPC分类号： H01L31/109

CPC分类号： H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f and the first number is larger than the second number.

摘要翻译： 提供了允许半导体器件的热阻降低和小型化的技术。 半导体器件具有多个单位晶体管Q，具有第一数量（7）的单位晶体管Q的晶体管形成区域3a，3b和3e，以及分别具有第二 （4个）晶体管Q.晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一个数量大于第二个数量。

公开(公告)号：US08860093B2

公开(公告)日：2014-10-14

申请号：US13538121

申请日：2012-06-29

申请人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

发明人： Satoshi Sasaki ,  Yasunari Umemoto ,  Yasuo Osone ,  Tsutomu Kobori ,  Chushiro Kusano ,  Isao Ohbu ,  Kenji Sasaki

IPC分类号： H01L27/102 ,  H01L29/737 ,  H03F3/195 ,  H01L23/66 ,  H01L27/06 ,  H01L23/00

CPC分类号： H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

摘要翻译： 提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。 例如，半导体器件可以包括多个单位晶体管Q，具有单位晶体管Q的第一数量（例如7个）的晶体管形成区域3a，3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一数量大于第二数量。