公开(公告)号：US20120305983A1

公开(公告)日：2012-12-06

申请号：US13571782

申请日：2012-08-10

申请人： Kenji Fujito ,  Kazumasa Kiyomi

发明人： Kenji Fujito ,  Kazumasa Kiyomi

IPC分类号： C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  H01L29/20 ,  H01L33/32

CPC分类号： H01L33/18 ,  C30B25/20 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/1848 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

摘要： The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

摘要翻译： 制备III族氮化物半导体晶体的方法包括制备具有非极性平面的晶种，然后在气相中从非极性平面生长III族氮化物半导体，其中生长包括生长III族氮化物半导体 以便在晶种的+ C轴方向上延伸。 可以通过该方法获得具有高质量和大面积非极性平面的III-V族氮化物半导体晶体。

公开(公告)号：US20120112320A1

公开(公告)日：2012-05-10

申请号：US13309138

申请日：2011-12-01

申请人： Shuichi KUBO ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Kenji Fujito ,  Yutaka Mikawa

发明人： Shuichi KUBO ,  Kenji Shimoyama ,  Kazumasa Kiyomi ,  Kenji Fujito ,  Yutaka Mikawa

IPC分类号： H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B23/02

CPC分类号： C30B25/20 ,  C23C16/303 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609

摘要： A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates.

摘要翻译： 一种氮化物半导体晶体的生产方法，包括在籽晶基底上生长半导体层以获得氮化物半导体晶体，其中种子基底包括由相同材料制成的多个晶种基底，多个晶种基底中的至少一个 与其他种子基板的偏角不同，并且通过将多个种子基板设置在半导体晶体制造装置中而生长单个半导体层，使得当在多个种子基板上生长单个半导体层时， 单个半导体层中的偏角分布变得小于多个种子基板中的偏角分布。

公开(公告)号：US08269251B2

公开(公告)日：2012-09-18

申请号：US12600352

申请日：2008-05-16

申请人： Kenji Fujito ,  Kazumasa Kiyomi

发明人： Kenji Fujito ,  Kazumasa Kiyomi

IPC分类号： H01L33/00

CPC分类号： H01L33/18 ,  C30B25/20 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/1848 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

摘要： The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

摘要翻译： 制备本发明的III族氮化物半导体晶体的方法包括制备具有非极性平面的晶种，然后在气相中从非极性平面生长III族氮化物半导体的步骤，其中生长步骤 包括生长III族氮化物半导体以在晶种的+ C轴方向上延伸。 可以通过该方法获得具有高质量和大面积非极性平面的III-V族氮化物半导体晶体。

公开(公告)号：US20100148212A1

公开(公告)日：2010-06-17

申请号：US12600352

申请日：2008-05-16

申请人： Kenji Fujito ,  Kazumasa Kiyomi

发明人： Kenji Fujito ,  Kazumasa Kiyomi

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/18 ,  C30B25/20 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/1848 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

摘要： The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

摘要翻译： 制备本发明的III族氮化物半导体晶体的方法包括制备具有非极性平面的晶种，然后在气相中从非极性平面生长III族氮化物半导体的步骤，其中生长步骤 包括生长III族氮化物半导体以在晶种的+ C轴方向上延伸。 可以通过该方法获得具有高质量和大面积非极性平面的III-V族氮化物半导体晶体。

公开(公告)号：US07928446B2

公开(公告)日：2011-04-19

申请号：US12669610

申请日：2008-07-08

申请人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

发明人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/10 ,  H01L21/02052

摘要： A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.

公开(公告)号：US20100200865A1

公开(公告)日：2010-08-12

申请号：US12669610

申请日：2008-07-08

申请人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

发明人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

IPC分类号： H01L29/20 ,  H01L21/302

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/10 ,  H01L21/02052

摘要： A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.

摘要翻译： 通过用含有铵盐的清洗剂清洗具有高于14.0nm-2的悬挂键密度的表面，产生具有悬挂键密度高于14.0nm-2的平坦表面的III族氮化物半导体衬底。

公开(公告)号：US08728622B2

公开(公告)日：2014-05-20

申请号：US13548829

申请日：2012-07-13

申请人： Kenji Fujito ,  Yasuhiro Uchiyama

发明人： Kenji Fujito ,  Yasuhiro Uchiyama

IPC分类号： C30B7/00 ,  C30B9/00 ,  B32B1/00 ,  B32B3/00 ,  B32B17/10 ,  B32B19/00 ,  B32B9/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02

CPC分类号： C01B21/0632 ,  C30B7/10 ,  C30B9/12 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/24628 ,  Y10T428/31

摘要： Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: −40

摘要翻译： 提供一种能够抑制裂纹产生的同时可以生长面积大，厚度大的III族氮化物晶体的基底。 用于生长其中的III族氮化物晶体的单晶衬底，其满足以下表达式（1），其中Z1（μm）是单晶衬底的生长表面中物理形状的翘曲量，以及 Z2（μm）是从单晶基板的生长面的结晶面形状的曲率半径计算出的翘曲量：-40

公开(公告)号：US08545626B2

公开(公告)日：2013-10-01

申请号：US12920976

申请日：2009-03-02

申请人： Kenji Fujito ,  Shuichi Kubo ,  Yoko Mashige

发明人： Kenji Fujito ,  Shuichi Kubo ,  Yoko Mashige

IPC分类号： C30B25/02 ,  C30B25/00 ,  C30B23/00 ,  C01B21/06

CPC分类号： C30B25/00 ,  C01B21/06 ,  C23C16/303 ,  C30B23/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/2982

摘要： A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.

摘要翻译： 提供了一种以简单的方法有效地生产具有所需主平面的板状氮化物半导体晶体的方法。 将原料气体供给到通过将晶体生长面投影在晶种上而获得的投影面的长度方向的长度L的长度L（L / W）和最大宽度W的比例（L / W） 方向为2〜400，最大宽度W为5mm以下，从而在晶种上生长板状半导体晶体。

公开(公告)号：US08709371B2

公开(公告)日：2014-04-29

申请号：US11921396

申请日：2005-07-08

申请人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

发明人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

公开(公告)号：US08022413B2

公开(公告)日：2011-09-20

申请号：US13082916

申请日：2011-04-08

申请人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

发明人： Kenji Fujito ,  Hirotaka Oota ,  Shuichi Kubo

IPC分类号： H01L29/15

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/10 ,  H01L21/02052

摘要： A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.

摘要翻译： 通过用含有铵盐的清洗剂清洗具有高于14.0nm-2的悬挂键密度的表面，产生具有悬挂键密度高于14.0nm-2的平坦表面的III族氮化物半导体衬底。