公开(公告)号：US4356214A

公开(公告)日：1982-10-26

申请号：US221775

申请日：1980-12-31

申请人： Kozi Soeda ,  Katuyuki Hoshikawa ,  Akitaka Kimura

发明人： Kozi Soeda ,  Katuyuki Hoshikawa ,  Akitaka Kimura

IPC分类号： B29D30/08 ,  B05C7/02 ,  B05D1/02 ,  B29C65/00 ,  B29C67/00 ,  B29D30/00 ,  B29D30/06

CPC分类号： B29D30/0633 ,  B29D30/0685 ,  B29D2030/0686 ,  B29D2030/0693 ,  B29D2030/0697 ,  Y10T152/10684

摘要： A method of forming a puncture preventing layer on an innner surface of a pneumatic tire including the steps of extruding sealing material and pulverizing the extruded sealing material into fine particles for coating the inner surface with a layer of the sealing material under pressure through action of centrifugal force. For effecting the above described method in an efficient manner, there is also provided a puncture preventing layer forming apparatus which includes arrangements for holding the tire, extruding the sealing material, and pulverizing the extruded sealing material so as to be coated onto the inner surface of the tire through the action of centrifugal force.

摘要翻译： 一种在充气轮胎的内表面上形成防刺穿层的方法，包括以下步骤：挤出密封材料并将挤出的密封材料粉碎成细颗粒，以在压力下通过离心作用在密封材料层上涂覆内表面 力。 为了有效地实现上述方法，还提供了一种防刺穿层形成装置，其包括用于保持轮胎，挤出密封材料和粉碎挤出的密封材料以便涂覆在内部表面上的布置 轮胎通过离心力的作用。

公开(公告)号：US4262624A

公开(公告)日：1981-04-21

申请号：US958972

申请日：1978-11-09

申请人： Kozi Soeda ,  Katuyuki Hoshikawa ,  Akitaka Kimura

发明人： Kozi Soeda ,  Katuyuki Hoshikawa ,  Akitaka Kimura

IPC分类号： B29D30/08 ,  B05C7/02 ,  B05D1/02 ,  B29C65/00 ,  B29C67/00 ,  B29D30/00 ,  B29D30/06

CPC分类号： B29D30/0633 ,  B29D30/0685 ,  B29D2030/0686 ,  B29D2030/0693 ,  B29D2030/0697 ,  Y10T152/10684

摘要： A method of forming a puncture preventing layer on an inner surface of a pneumatic tire including the steps of extruding sealing material and pulverizing the extruded sealing material into fine particles for coating the inner surface with a layer of the sealing material under pressure through action of centrifugal force. For effecting the above described method in an efficient manner, there is also provided a puncture preventing layer forming apparatus which includes arrangements for holding the tire, extruding the sealing material, and pulverizing the extruded sealing material so as to be coated onto the inner surface of the tire through the action of centrifugal force.

摘要翻译： 一种在充气轮胎的内表面上形成防刺穿层的方法，包括以下步骤：挤出密封材料并将挤出的密封材料粉碎成细颗粒，以在压力下通过离心作用将密封材料层涂覆在内表面 力。 为了有效地实现上述方法，还提供了一种防刺穿层形成装置，其包括用于保持轮胎，挤出密封材料和粉碎挤出的密封材料以便涂覆在内部表面上的布置 轮胎通过离心力的作用。

公开(公告)号：US4057090A

公开(公告)日：1977-11-08

申请号：US725177

申请日：1976-09-21

申请人： Katuyuki Hoshikawa ,  Soji Noda ,  Akitaka Kimura

发明人： Katuyuki Hoshikawa ,  Soji Noda ,  Akitaka Kimura

IPC分类号： C08L23/00 ,  B29C73/18 ,  B29C73/20 ,  B29D30/00 ,  B60C20060101 ,  B60C1/00 ,  B60C5/14 ,  B60C19/04 ,  C08K3/34 ,  C08L7/00 ,  C08L21/00 ,  C08L101/00 ,  C09K3/00 ,  C09K3/10 ,  B60C21/08

CPC分类号： B29C73/20 ,  B29D30/0685 ,  B60C19/12 ,  B29D2030/0695 ,  B29L2030/00 ,  Y10S428/912 ,  Y10T152/10684

摘要： Pneumatic tire including a puncture sealing layer which is applied to an inner lining and in which by addition of specific amounts of polyisobutylene and of a particular form of silica with respect to a set amount of polybutene and by use of powdered elastomer having a specific particle size distribution there are achieved optimum values of viscosity and adhesivity and ability to seal even large puncture holes in a wide range of temperature and operating conditions. In addition there is less tendency for puncture sealing layer components to migrate to the inner lining and tire durability is therefore improved.

摘要翻译： 气动轮胎，其包括施加到内衬上并且相对于一定量的聚丁烯加入特定量的聚异丁烯和特定形式的二氧化硅的穿刺密封层，并且通过使用具有特定粒度的粉末弹性体 在大范围的温度和操作条件下，分布的粘度和粘合性达到最佳值，甚至能够密封大的穿刺孔。 此外，穿刺密封层组分迁移到内衬的倾向较小，因此轮胎耐久性得到改善。

公开(公告)号：US07741654B2

公开(公告)日：2010-06-22

申请号：US11575387

申请日：2005-09-15

申请人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

发明人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

IPC分类号： H01L29/12 ,  H01L31/00 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01S5/223

摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

摘要翻译： 本发明提供一种电流注入效率优异的半导体激光器。 在根据本发明的内条型半导体激光器中，p型包层309具有彼此交替层叠的由GaN层和Al 0.1 Ga 0.9 N层构成的超晶格结构。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。 也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

公开(公告)号：US5559820A

公开(公告)日：1996-09-24

申请号：US499661

申请日：1995-07-07

申请人： Akitaka Kimura ,  Masaaki Nido ,  Akihisa Tomita ,  Akira Suzuki

发明人： Akitaka Kimura ,  Masaaki Nido ,  Akihisa Tomita ,  Akira Suzuki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2275 ,  H01S5/0424 ,  H01S5/2205 ,  H01S5/3211 ,  H01S5/3415 ,  H01S5/3428

摘要： A stripe structure including an MQW active layer has a width equal to or smaller than twice the diffusion length of holes, and a p type semiconductor layer for injecting holes into the MQW active layer is formed on both sides of the stripe structure in contact with the sides of the stripe structure. Even when any MQW structure is used as the MQW active layer in order to reduce the temperature dependency of the threshold current, holes are injected into QW layers from the p type semiconductor layer which is in direct contact with all the QW layers in the MQW active layer, so that no local presence of holes in some QW layers occurs. Since the width of the stripe structure is equal to or smaller than twice the diffusion length of holes, the holes are uniformly injected in the direction parallel to the QW surface. That is, it is possible to improve the MQW active layer, while avoiding the local presence of holes, to reduce the temperature dependency of the threshold current which is accompanied with the local presence of holes in the conventional structure. This structure can reduce the temperature dependency of the threshold current of a semiconductor laser.

摘要翻译： 包括MQW有源层的条纹结构的宽度等于或小于孔的扩散长度的两倍，并且用于将空穴注入MQW有源层的ap型半导体层形成在条形结构的与侧面接触的两侧 的条纹结构。 即使使用任何MQW结构作为MQW有源层，为了降低阈值电流的温度依赖性，也可以将空穴从与MQW有源的所有QW层直接接触的p型半导体层注入QW层 层，使得在一些QW层中不存在空穴的局部存在。 由于条形结构的宽度等于或小于孔的扩散长度的两倍，所以孔在平行于QW表面的方向上被均匀地注入。 也就是说，可以改善MQW有源层，同时避免空穴的局部存在，以降低伴随常规结构中局部存在孔的阈值电流的温度依赖性。 该结构可以降低半导体激光器的阈值电流的温度依赖性。

公开(公告)号：US07655485B2

公开(公告)日：2010-02-02

申请号：US11937921

申请日：2007-11-09

申请人： Akitaka Kimura

发明人： Akitaka Kimura

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341 ,  Y10T428/24273

摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

摘要翻译： 在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过 金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。 为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即， 提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

公开(公告)号：US06887726B2

公开(公告)日：2005-05-03

申请号：US09161981

申请日：1998-09-29

申请人： Akitaka Kimura

发明人： Akitaka Kimura

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/22 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341 ,  Y10T428/24273

摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.

摘要翻译： 在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过 金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。 为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即， 提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

公开(公告)号：US6100106A

公开(公告)日：2000-08-08

申请号：US192304

申请日：1998-11-17

申请人： Atsushi Yamaguchi ,  Akitaka Kimura ,  Chiaki Sasaoka

发明人： Atsushi Yamaguchi ,  Akitaka Kimura ,  Chiaki Sasaoka

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/44 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/34333 ,  Y10S438/931 ,  Y10S438/967

摘要： A process for producing a semiconductor light-emitting device, which comprises forming, on a substrate by crystal growth, a gallium nitride type compound semiconductor layer having a crystal face (0,0,0,1) which can be utilized as the end surface of an optical waveguide or as a cavity mirror surface.

摘要翻译： 一种半导体发光器件的制造方法，其包括通过晶体生长在基板上形成具有可用作端面的结晶面（0,0,0,1）的氮化镓型化合物半导体层 的光波导或者作为腔镜面。

公开(公告)号：US6096130A

公开(公告)日：2000-08-01

申请号：US824017

申请日：1997-03-21

申请人： Akitaka Kimura ,  Haruo Sunakawa ,  Masaaki Nido

发明人： Akitaka Kimura ,  Haruo Sunakawa ,  Masaaki Nido

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/205 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B25/14

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02661

摘要： A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600.degree. C. to 700.degree. C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.

摘要翻译： 提供了一种在GaAs衬底上具有极高表面平面度的GaN层的晶体生长方法，其中将GaAs衬底加热至600℃至700℃的温度，而不提供任何V族 在包括N的第一源材料和包含Ga的第二源材料在内的GaAs衬底上形成富镓表面的元素与载气一起被供应到GaAs衬底的表面上以在GaAs衬底的表面上形成GaN层 GaAs衬底。

公开(公告)号：US5843227A

公开(公告)日：1998-12-01

申请号：US782075

申请日：1997-01-13

申请人： Akitaka Kimura ,  Haruo Sunakawa ,  Masaaki Nido ,  Atsushi Yamaguchi

发明人： Akitaka Kimura ,  Haruo Sunakawa ,  Masaaki Nido ,  Atsushi Yamaguchi

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/406

摘要： A crystal growth method for growing on a gallium arsenide (GaAs) substrate a gallium nitride (GaN) film which is good in surface flatness and superior in crystallinity. According to the method, a GaAs substrate having a surface which is inclined with respect to the GaAs(100) face is used. The inclination angle of the substrate surface is larger than 0 degree but smaller than 35 degrees with respect to the GaAs(100) face. The inclination direction of the substrate surface is within a range of an angular range from the �0,0,1! direction of GaAs to the �0,-1,0! direction past the �0,-1,1! direction and angles less than 5 degrees on opposite sides of the angular range around an �1,0,0! direction of gallium arsenide taken as an axis, or within another range crystallographically equivalent to the range. The GaN layer is formed on the surface of the GaAs substrate preferably by hydride vapor deposition method.

摘要翻译： 一种晶体生长方法，用于在砷化镓（GaAs）衬底上生长表面平坦度好并且结晶度优异的氮化镓（GaN）膜。 根据该方法，使用具有相对于GaAs（100）面倾斜的表面的GaAs衬底。 衬底表面的倾斜角度相对于GaAs（100）面大于0度但小于35度。 衬底表面的倾斜方向在从GaAs的[0,0,1]方向到[0，-1,1]方向的[0，-1,0]方向的角度范围的范围内，以及 在作为轴的砷化镓的[1,0.0]方向的角度范围的相对侧的角度小于5度，或在与该范围相似的等距范围内的角度。 优选通过氢化物气相沉积法在GaAs衬底的表面上形成GaN层。