利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

66 条记录 (耗时 0.024 秒)

    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip
    1.
    发明授权
    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip 失效
    从用于微电子芯片空腔的多层陶瓷基板制造中使用的金属插件中除去残留物

    公开(公告)号：US5643818A

    公开(公告)日：1997-07-01

    申请号：US642238

    申请日：1996-05-02

    申请人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    发明人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    IPC分类号： H01L21/48 ,  H01L21/70

    CPC分类号： H01L21/4857 ,  H01L21/4864 ,  H01L2924/15153 ,  H01L2924/1517

    摘要： After a metallic insert has been used precisely to define a cavity for a microelectronic chip in a laminated, multi-sheet, predominantly ceramic substrate having metallic features, any green sheet and metal-polymer composite paste residues are removed from the metallic insert by immersing the metallic insert in an ultrasonically agitated bath containing a first solvent having a relatively high boiling point for about five to fifteen minutes, replacing the first solvent with a second solvent having a relatively low boiling point, and drying the metallic insert in hot air or hot nitrogen to remove the second solvent. Preferably, the first solvent is an alkoxy alcohol, such as 1-methoxy-2-propanol or 3-methoxy-1-butanol, or a hydroxy ester, such as ethyl lactate, and the second solvent is a lower alkyl alcohol, such as isopropanol. Alternatively, the first solvent may be a ketone or an alkyl ester. The metallic insert is rinsed in the second solvent, preferably in an ultrasonically agitated bath, to replace the first solvent with the second solvent before the metallic insert is dried to remove the first solvent.

    摘要翻译： 在金属插入件被精确地用于在具有金属特征的层压，多片，主要为陶瓷的基底中限定用于微电子芯片的空腔的情况下，通过将任何生片和金属 - 聚合物复合糊料残留物从金属插入物中浸渍 金属插入物在包含具有较高沸点的第一溶剂的超声波搅拌浴中约5至15分钟，用具有相对低沸点的第二溶剂代替第一溶剂，并在热空气或热氮中干燥金属插入物 以除去第二溶剂。 优选地，第一溶剂是烷氧基醇，例如1-甲氧基-2-丙醇或3-甲氧基-1-丁醇，或羟基酯如乳酸乙酯，第二溶剂是低级烷基醇，例如 异丙醇 或者，第一溶剂可以是酮或烷基酯。 金属插入物在第二溶剂中，优选在超声波搅拌浴中漂洗，以在将金属插入物干燥以除去第一溶剂之前用第二溶剂替换第一溶剂。

    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer
    2.
    发明授权
    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer 失效
    使用可热解聚表面层形成无缺陷陶瓷结构的方法

    公开(公告)号：US06261927B1

    公开(公告)日：2001-07-17

    申请号：US09302943

    申请日：1999-04-30

    申请人： Govindarajan Natarajan ,  Richard F. Indyk ,  Vincent P. Peterson ,  Krishna G. Sachdev

    发明人： Govindarajan Natarajan ,  Richard F. Indyk ,  Vincent P. Peterson ,  Krishna G. Sachdev

    IPC分类号： H01L2130

    CPC分类号： H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y10S438/976 ,  H01L2924/00

    摘要： This invention relates generally to a new method of forming semiconductor substrates with defect-free surface metallurgical features. In particular, the invention related to a method for providing surface protected ceramic green sheet laminates using at least one thermally depolymerizable surface layer. More particularly, the invention encompasses a method for fabricating semiconductor substrates wherein a thermally depolymerizable/decomposable surface film is placed over a ceramic green sheet stack or assembly prior to lamination and caused to conform to the surface topography of the green sheet during lamination. The invention also encompasses a method for fabricating surface protected green sheet laminates which can be sized or diced without causing process related defects on the ceramic surface. After lamination the thermally depolymerizable/decomposable film is conveniently and cleanly removed due to thermal depolymerization and burn-off of volatile species during the sintering process, thus providing surface defect-free ceramic substrates.

    摘要翻译： 本发明一般涉及一种形成具有无缺陷表面冶金特征的半导体衬底的新方法。 特别地，本发明涉及使用至少一个可热解聚表面层来提供表面保护的陶瓷生片层叠体的方法。 更具体地说，本发明包括一种制造半导体衬底的方法，其中在层压之前将热可解聚/可分解的表面薄膜放置在陶瓷生片层或组件上方并使其在叠层过程中符合生片的表面形貌。 本发明还包括用于制造表面保护的生片层压板的方法，其可以在陶瓷表面上不引起工艺相关缺陷的尺寸或切割。 在层压之后，由于在烧结过程中挥发物质的热解聚和燃烧，因此可方便且清洁地除去热可分解/可分解的膜，从而提供无表面缺陷的陶瓷基材。

    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer
    3.
    发明授权
    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer 失效
    使用可热解聚表面层形成无缺陷陶瓷结构的方法

    公开(公告)号：US06597058B1

    公开(公告)日：2003-07-22

    申请号：US09370733

    申请日：1999-08-09

    申请人： Govindarajan Natarajan ,  Richard F. Indyk ,  Vincent P. Peterson ,  Krishna G. Sachdev

    发明人： Govindarajan Natarajan ,  Richard F. Indyk ,  Vincent P. Peterson ,  Krishna G. Sachdev

    IPC分类号： H01L2358

    CPC分类号： H01L21/481 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y10S438/976 ,  H01L2924/00

    摘要： This invention relates generally to a new method of forming semiconductor substrates with defect-free surface metallurgical features. In particular, the invention related to a method for providing surface protected ceramic green sheet laminates using at least one thermally depolymerizable surface layer. More particularly, the invention encompasses a method for fabricating semiconductor substrates wherein a thermally depolymerizable/decomposable surface film is placed over a ceramic green sheet stack or assembly prior to lamination and caused to conform to the surface topography of the green sheet during lamination. The invention also encompasses a method for fabricating surface protected green sheet laminates which can be sized or diced without causing process related defects on the ceramic surface. After lamination the thermally depolymerizable/decomposable film is conveniently and cleanly removed due to thermal depolymerization and burn-off of volatile species during the sintering process, thus providing surface defect-free ceramic substrates.

    摘要翻译： 本发明一般涉及一种形成具有无缺陷表面冶金特征的半导体衬底的新方法。 特别地，本发明涉及使用至少一个可热解聚表面层来提供表面保护的陶瓷生片层叠体的方法。 更具体地说，本发明包括一种制造半导体衬底的方法，其中在层压之前将热可解聚/可分解的表面薄膜放置在陶瓷生片层或组件上方并使其在叠层过程中符合生片的表面形貌。 本发明还包括用于制造表面保护的生片层压板的方法，其可以在陶瓷表面上不引起工艺相关缺陷的尺寸或切割。 在层压之后，由于在烧结过程中挥发物质的热解聚和燃烧，因此可方便且清洁地除去热可分解/可分解的膜，从而提供无表面缺陷的陶瓷基材。

    Method of forming patterned polyimide films
    7.
    发明授权
    Method of forming patterned polyimide films 失效
    形成图案化聚酰亚胺膜的方法

    公开(公告)号：US5470693A

    公开(公告)日：1995-11-28

    申请号：US837505

    申请日：1992-02-18

    申请人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    发明人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    IPC分类号： H01L21/30 ,  G03F7/00 ,  G03F7/09 ,  H01L21/306 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  G03F7/26

    CPC分类号： G03F7/0035 ,  G03F7/094 ,  H01L21/31144 ,  H01L21/76804

    摘要： A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

    摘要翻译： 公开了通过光致抗蚀剂掩模使用聚酰亚胺前体的湿显影制造图案化聚酰亚胺膜的方法。 通过从聚酰胺酸前体（通常来源于3,3'，4,4'-联苯四羧酸二酐 - 对苯二胺（BPDA-PDA））开始形成低热膨胀系数（TCE）聚酰亚胺图案。 产生聚酰亚胺图案，完全保留聚酰亚胺骨架化学的固有性质，并在低TCE聚酰亚胺电介质中形成冶金图案。

    Scratch resistant recording materials for electroerosion printing not requiring a lubricant overcoat
    8.
    发明授权
    Scratch resistant recording materials for electroerosion printing not requiring a lubricant overcoat 失效
    用于电腐蚀印刷的防刮擦记录材料不需要润滑剂外涂层

    公开(公告)号：US4554562A

    公开(公告)日：1985-11-19

    申请号：US567297

    申请日：1983-12-30

    申请人： Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

    发明人： Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

    IPC分类号： B41M5/24 ,  B41N1/14 ,  G01D15/34 ,  B05D5/12 ,  B32B7/00

    CPC分类号： B41M5/245 ,  Y10T428/24893 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/3154

    摘要： Electroerosion recording materials of superior scratch resistance are provided without the need for a lubricant overcoat by incorporating a hard, lubricating hydrophobic polymer layer between the support and the removable, thin conductive layer to reduce plastic deformation of the support under stylus writing pressure. The intermediate polymer layer provides a highly adhering surface for the overlying aluminum film and contains graphite fluoride and/or fluorocarbon resins such as Teflon.RTM. and hard particles such as silica. The materials may be used in various printing processes including making directly readable images, direct negatives and wear resistant offset printing masters.

    摘要翻译： 通过在支撑体和可移除的薄导电层之间并入硬的润滑的疏水性聚合物层，在不需要润滑剂外涂层的情况下，提供了优异的耐刮擦性的电蚀记录材料，以减少支架在笔写压力下的塑性变形。 中间聚合物层为覆盖的铝膜提供高度粘附的表面，并且包含氟化石墨氟化物和/或氟碳树脂如Teflon TM和硬颗粒如二氧化硅。 这些材料可以用于各种印刷工艺中，包括制造直接可读的图像，直接的底片和耐磨胶版印刷主机。

    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    9.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效

    公开(公告)号：US4493855A

    公开(公告)日：1985-01-15

    申请号：US452549

    申请日：1982-12-23

    申请人： Harbans S. Sachdev ,  Krishna G. Sachdev

    发明人： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC分类号： H01L21/302 ,  G03F7/09 ,  H01L21/3065 ,  H01L21/3205 ,  B05D3/06

    CPC分类号： G03F7/094

    摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    Method of removing silicone polymer deposits from electronic components
    10.
    发明授权
    Method of removing silicone polymer deposits from electronic components 有权
    从电子部件去除有机硅聚合物沉积物的方法

    公开(公告)号：US06652665B1

    公开(公告)日：2003-11-25

    申请号：US10160627

    申请日：2002-05-31

    申请人： Krishna G. Sachdev ,  Umar M. Ahmad ,  Chon C. Lei

    发明人： Krishna G. Sachdev ,  Umar M. Ahmad ,  Chon C. Lei

    IPC分类号： B08B310

    CPC分类号： C11D7/261 ,  B08B3/02 ,  B08B3/102 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/5022 ,  C11D11/0047 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/16152 ,  H05K3/288

    摘要： A method of removing cured silicone polymer deposits from electronic components. The components are immersed in a preheated solution of a quaternary ammonium fluoride in a hydrophobic non-hydroxylic aprotic solvent with agitation. The components are then immersed in a preheated solvent consisting essentially of a hydrophobic aprotic solvent with agitation. This is followed by a rinse and spray of the components with a hydrophilic, essentially water soluble solvent, with agitation. The components are then immersed in a water bath and then rinsed with a pressurized spray of water and then dried with a N2 blow dry.

    摘要翻译： 从电子部件去除固化的硅氧烷聚合物沉积物的方法。 将组分浸入预热的季铵氟化物在疏水非羟基非质子溶剂中并搅拌。 然后将组分浸入基本上由疏水性非质子溶剂组成的预热溶剂中并搅拌。 随后在搅拌下用亲水性，基本上水溶性的溶剂冲洗和喷雾组分。 然后将组分浸入水浴中，然后用加压喷雾水冲洗，然后用N 2吹干干燥。