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    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip
    1.
    发明授权
    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip 失效
    从用于微电子芯片空腔的多层陶瓷基板制造中使用的金属插件中除去残留物

    公开(公告)号：US5643818A

    公开(公告)日：1997-07-01

    申请号：US642238

    申请日：1996-05-02

    申请人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    发明人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    IPC分类号： H01L21/48 ,  H01L21/70

    CPC分类号： H01L21/4857 ,  H01L21/4864 ,  H01L2924/15153 ,  H01L2924/1517

    摘要： After a metallic insert has been used precisely to define a cavity for a microelectronic chip in a laminated, multi-sheet, predominantly ceramic substrate having metallic features, any green sheet and metal-polymer composite paste residues are removed from the metallic insert by immersing the metallic insert in an ultrasonically agitated bath containing a first solvent having a relatively high boiling point for about five to fifteen minutes, replacing the first solvent with a second solvent having a relatively low boiling point, and drying the metallic insert in hot air or hot nitrogen to remove the second solvent. Preferably, the first solvent is an alkoxy alcohol, such as 1-methoxy-2-propanol or 3-methoxy-1-butanol, or a hydroxy ester, such as ethyl lactate, and the second solvent is a lower alkyl alcohol, such as isopropanol. Alternatively, the first solvent may be a ketone or an alkyl ester. The metallic insert is rinsed in the second solvent, preferably in an ultrasonically agitated bath, to replace the first solvent with the second solvent before the metallic insert is dried to remove the first solvent.

    摘要翻译： 在金属插入件被精确地用于在具有金属特征的层压，多片，主要为陶瓷的基底中限定用于微电子芯片的空腔的情况下，通过将任何生片和金属 - 聚合物复合糊料残留物从金属插入物中浸渍 金属插入物在包含具有较高沸点的第一溶剂的超声波搅拌浴中约5至15分钟，用具有相对低沸点的第二溶剂代替第一溶剂，并在热空气或热氮中干燥金属插入物 以除去第二溶剂。 优选地，第一溶剂是烷氧基醇，例如1-甲氧基-2-丙醇或3-甲氧基-1-丁醇，或羟基酯如乳酸乙酯，第二溶剂是低级烷基醇，例如 异丙醇 或者，第一溶剂可以是酮或烷基酯。 金属插入物在第二溶剂中，优选在超声波搅拌浴中漂洗，以在将金属插入物干燥以除去第一溶剂之前用第二溶剂替换第一溶剂。

    Method for shaping a laminate substrate
    4.
    发明授权
    Method for shaping a laminate substrate 有权
    层压基板成型方法

    公开(公告)号：US09048245B2

    公开(公告)日：2015-06-02

    申请号：US13488678

    申请日：2012-06-05

    申请人： Edmund Blackshear ,  Thomas E. Lombardi ,  Donald A. Merte ,  Steven P. Ostrander ,  Thomas Weiss ,  Jiantao Zheng

    发明人： Edmund Blackshear ,  Thomas E. Lombardi ,  Donald A. Merte ,  Steven P. Ostrander ,  Thomas Weiss ,  Jiantao Zheng

    IPC分类号： B23K31/00 ,  B23K31/02 ,  B23K1/00 ,  B23K1/008 ,  B23K1/19 ,  B23K37/00 ,  B23K37/04 ,  H01L23/00 ,  H01L21/673

    CPC分类号： H01L23/562 ,  H01L21/67333 ,  H01L22/12 ,  H01L22/20 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/81024 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81908 ,  H01L2924/3511 ,  Y02P80/30

    摘要： A method including providing a fixture comprising a trap ring, a base plate having a recess adapted to receive a laminate substrate, the base plate including an opening and an adjustable height center button disposed in the opening, the opening being located within the recess and located in a center of the laminate substrate, characterizing the laminate substrate for warpage characteristics by using one of room temperature techniques and elevated temperature techniques, determining a horizontal plane distortion based on the warpage characteristics, and placing the laminate substrate into the fixture with an adjustment to correct the horizontal plane distortion, the adjustment is provided by the adjustable height center button, wherein the adjustable height center button contacts the laminate substrate. The method further includes fluxing the laminate substrate, placing a chip onto the laminate substrate, and placing the fixture into a reflow furnace to join the chip and the laminate substrate.

    摘要翻译： 一种方法，包括提供包括陷阱环的固定装置，具有适于接收层压基板的凹部的基板，所述基板包括设置在所述开口中的开口和可调节的高度中心按钮，所述开口位于所述凹部内并且位于 在层压基板的中心，通过使用室温技术和高温技术中的一种来表征层压基板的翘曲特性，基于翘曲特性确定水平面变形，并将层压基板放置到固定装置中， 校正水平面失真，调节由可调高度中心按钮提供，其中可调节的高度中心按钮接触层压基板。 该方法还包括使层压基板熔化，将芯片放置在层压基板上，并将固定装置放入回流炉中以连接芯片和层叠基板。