摘要:
Disclosed herein are a heat-radiating substrate and a method for manufacturing the same. The heat-radiating substrate includes: an anodized substrate having an anodized film formed over a metal substrate; a circuit pattern formed on one surface of the anodized substrate; and a metal layer formed on the other surface of the anodized substrate. The metal layer formed on the other surface of the anodized substrate has the same area as that of the circuit pattern formed on one surface thereof, and is formed within an edge of the anodized substrate. The metal layer is added, making it possible to minimize a warpage problem of the substrate. In addition, a heat radiating plate is in direct contact with the anodized substrate, thereby making it possible to solve a performance deterioration problem of the heat-radiating substrate and a heat generating element and improve a heat-radiating performance.
摘要:
Disclosed herein is an anodized heat-radiating substrate. The anodized heat-radiating substrate is advantageous in that it has good radiation characteristics because an anodized oxide layer is formed on the entire surface of a metal layer. And, the anodized heat-radiating substrate is advantageous in that it has high-density/high accumulation characteristics because it forms multi-layered structure by using the connecting member.
摘要:
Disclosed herein is a heat-radiating substrate, including: a copper substrate; an alumina layer formed on one side of the copper substrate; a first circuit layer formed on the alumina layer; and a second circuit layer formed on the first circuit layer, wherein a heat-radiating element is mounted on a first pad of the first circuit layer or a second pad of the second circuit layer, or is directly mounted on the exposed side of the copper substrate after forming an opening on the alumina layer.
摘要:
Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; and a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by the heat generated from the heat generating element.
摘要:
Disclosed herein are a hybrid heat-radiating substrate including a metal core layer; an oxide insulating core layer that is formed in a thickness direction of the metal core layer to have a shape where the oxide insulating core layer is integrally formed with the metal core layer, an oxide insulating layer that is formed on one surface or both surfaces of the metal core layer, and a circuit layer that is configured to include first circuit patterns formed on the oxide insulating core layer and second circuit patterns formed on the oxide insulating layer, and a method of manufacturing the same.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed on the base substrate and in inner portions of the grooves.
摘要:
Disclosed herein is a heat-dissipating substrate in order to improve heat-dissipating characteristics. The heat-dissipating substrate, comprising: a copper layer having a predetermined thickness; anodized insulating layers formed on upper and lower surfaces of the copper layer; and aluminum (Al) layers formed between the copper layer and the anodized insulating layer. Therefore, a heat-dissipating function of the base made of the aluminum (Al) layer and the copper (Cu) layer is improved, thereby making it possible to provide a high-output metal substrate appropriate for high-integration/high capacity electronic components.
摘要:
A power module package includes: a substrate having a stepped portion and a non-stepped portion; a power circuit unit electrically connected to a circuit wiring provided in the stepped portion; a control circuit unit electrically connected to a circuit wiring provided in the non-stepped portion; and a molding unit molded on the substrate to seal the power circuit unit while exposing the circuit wiring of the non-stepped portion. Therefore, it is possible to improve thermal characteristics of the power module package, implement high reliability between the power circuit unit and the control circuit unit, improve design freedom of the power module package, and implement miniaturization of products.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate made of a metal material; cooling channels formed to allow a cooling material to flow in an inner portion of the base substrate; an anodized layer formed on an outer surface of the base substrate; a metal layer formed on a first surface of the base substrate having the anodized layer and including circuits and connection pads; and semiconductor devices mounted on the metal layer.
摘要:
Provided are a semiconductor package capable of packaging and modularizing power semiconductor devices which are difficult to integrate due to heat generation, a semiconductor package module using the same, and a mounting structure thereof. The semiconductor package includes: a common connection terminal formed to have a flat plate shape; first and second electronic devices respectively bonded to both surfaces of the common connection terminals; first and second connection terminals having a flat plate shape and bonded to the first electronic device; and a third connection terminal having a flat plate shape and bonded to the second electronic device.