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公开(公告)号：US5970315A
公开(公告)日：1999-10-19
申请号：US943663
申请日：1997-10-03
IPC分类号： G01B21/30 , B62D57/00 , B81B3/00 , B81B5/00 , B81B7/02 , B81C3/00 , G01N13/10 , G01N37/00 , G11B5/00 , G11B9/00 , G11B9/14 , H02N1/00 , H01L21/44
CPC分类号： H02N1/006 , B81C1/0015 , B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1445 , B81B2201/07 , B81B2201/12 , B81B2203/0361 , B81C2201/0109 , B81C2201/0132 , G11B2005/0002 , Y10S977/861 , Y10S977/881 , Y10S977/888 , Y10S977/89
摘要： The present invention is directed to a process for fabricating a microelectromechanical device from a substrate carrying at least one layer of a non-erodible material laid out to form at least a portion of the microelectromechanical device, at least one layer of an erodible material, and at least one sacrificial layer. The process includes the step of using the layer of non-erodible material as a mask and anistropically etching any of the layer of erodible material not occluded by the layer of non-erodible material. The process also includes the step of isotropically etching the sacrificial layer under at least a beam portion of the microelectromechanical device to free the beam portion of the microelectromechanical device from the substrate.
摘要翻译： 本发明涉及从承载至少一层不可侵蚀材料的基底制造微机电装置的方法，其布置成形成至少一部分微机电装置，至少一层可侵蚀材料，以及 至少一个牺牲层。 该方法包括使用不可侵蚀材料层作为掩模的步骤，并且非理想地蚀刻不被不可侵蚀材料层遮挡的可侵蚀材料层中的任何一层。 该方法还包括在微电子机械装置的至少梁部分下各向同性地蚀刻牺牲层的步骤，以将微机电装置的束部分从衬底释放。
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公开(公告)号：US5717631A
公开(公告)日：1998-02-10
申请号：US507676
申请日：1995-07-25
IPC分类号： G01B21/30 , B62D57/00 , B81B3/00 , B81B5/00 , B81B7/02 , B81C3/00 , G01N13/10 , G01N37/00 , G11B5/00 , G11B9/00 , G11B9/14 , H02N1/00 , H01L21/44
CPC分类号： H02N1/006 , B81C1/0015 , B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1445 , B81B2201/07 , B81B2201/12 , B81B2203/0361 , B81C2201/0109 , B81C2201/0132 , G11B2005/0002 , Y10S977/861 , Y10S977/881 , Y10S977/888 , Y10S977/89
摘要： A microelectromechanical device is comprised of a cantilevered beam positioned above, and free to move relative to, a substrate. The beam may carry a plurality of conductors which are insulated from one another. One or more tips is positioned on the beam with each tip being in electrical contact with one of the conductors. A memory device may be constructed by providing an array of such cantilevered beams proximate to a layer of media. Devices for positioning the beam in x and y directions perpendicular to each other and parallel to the layer of media and in a z direction perpendicular to the media are provided. A control circuit generates control signals input to the positioning devices for positioning the tips according to x, y, and z coordinates. A read/write circuit which is in electrical communication with the conductors of the beam, provide signals to the tips to cause the tips to write those signals to the layer of media in a write mode and to read previously written signals sensed by the tips in a read mode. A fabrication method is also disclosed.
摘要翻译： 微机电装置包括位于上方并相对于衬底自由移动的悬臂梁。 梁可以承载彼此绝缘的多个导体。 一个或多个尖端位于梁上，每个尖端与导体之一电接触。 可以通过提供靠近一层介质的这种悬臂梁的阵列来构造存储器件。 提供了用于将光束定位在彼此垂直并且平行于介质层并且垂直于介质的z方向上的x和y方向上的装置。 控制电路产生输入到定位装置的控制信号，用于根据x，y和z坐标定位尖端。 与光束的导体电连通的读/写电路向尖端提供信号，以使尖端以写模式将这些信号写入介质层，并读取由尖端感测的先前写入的信号 读取模式。 还公开了一种制造方法。
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公开(公告)号：US07153717B2
公开(公告)日：2006-12-26
申请号：US10319174
申请日：2002-12-13
申请人： L. Richard Carley , Suresh Santhanam , Hsu Yu-Nu
发明人： L. Richard Carley , Suresh Santhanam , Hsu Yu-Nu
IPC分类号： H01L21/00
CPC分类号： B81B7/0077 , B81B2203/0315 , B81C1/00476 , B81C1/00936 , B81C2201/0109 , B81C2201/0132 , B81C2203/0136 , G01P1/023 , G01P15/0802 , G01P2015/0828
摘要： This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.
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公开(公告)号：US20120079692A1
公开(公告)日：2012-04-05
申请号：US13326777
申请日：2011-12-15
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译： 公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。 对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。 可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。 将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此 在随后的冷却中，提供具有预定期望谐振频率的谐振器。
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5.发明授权Fully differential operational amplifier having frequency dependent impedance division 失效具有频率相关阻抗分频的全差分运算放大器
公开(公告)号：US5146179A
公开(公告)日：1992-09-08
申请号：US800845
申请日：1991-11-29
CPC分类号： H03F3/3001 , H03F3/45192 , H03F2203/45028 , H03F2203/45182 , H03F2203/45278
摘要： A fully differential operational amplifier includes first and second frequency dependent impedance dividers, preferably frequency dependent current dividers, each of which has an input, a noninverting output and an inverting output. A respective input is coupled to a differential input signal. The noninverting output of the first frequency dependent impedance divider is electrically coupled to the inverting output of the second frequency dependent impedance divider, and the noninverting output of the second impedance divider is electrically coupled to the inverting output of the first divider. A current feedback buffer electrically couples the noninverting output of a respective frequency dependent impedance divider to its associated input. The cross coupling and current feedback buffers provide positive feedback action which merges the inverting and noninverting differential signals as a function of frequency. The frequency dependent impedance dividers preferably deliver substantially all of the current at the input thereof to the associated inverted output at relatively low frequencies (DC) and split the current at the input between the associated inverting and noninverting outputs at relatively high frequencies. Each frequency dependent current divider may be implemented by a pair of cascode transistors one of which is loaded by a cascoded current mirror. High DC gain coupled with high and symmetric slew rate and high common mode rejection is thereby provided.
摘要翻译： 全差分运算放大器包括第一和第二频率相关阻抗分配器，优选频率相关的电流分配器，每个具有输入，非反相输出和反相输出。 相应的输入耦合到差分输入信号。 第一频率相关阻抗分配器的同相输出电耦合到第二频率相关阻抗分配器的反相输出，并且第二阻抗分压器的同相输出电耦合到第一分频器的反相输出。 电流反馈缓冲器将相应的频率相关阻抗分配器的非反相输出电耦合到其相关联的输入。 交叉耦合和电流反馈缓冲器提供正反馈作用，其将反相和同相差分信号作为频率的函数进行合并。 频率相关阻抗分配器优选地将输入端的电流基本上全部输送到相对较低频率（DC）的相关反相输出，并以相对较高的频率将相关联的反相和同相输出之间的输入电流分开。 每个频率相关的电流分配器可以由一对共源共栅晶体管来实现，其中一个是由共源电流反射镜加载的。 由此提供了高直流增益以及高对称压摆率和高共模抑制。
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公开(公告)号：US5136593A
公开(公告)日：1992-08-04
申请号：US428556
申请日：1989-10-30
申请人： Jaekyun J. Moon , L. Richard Carley
发明人： Jaekyun J. Moon , L. Richard Carley
CPC分类号： H03M13/39 , H04L25/03324 , H04L25/03203 , H04L25/03299
摘要： A method for identifying a signal subject to intersymbol interference comprising the steps of receiving .tau.+1 samples of the signal where .tau. is greater than or equal to one; searching a tree representation of known values to determine the path of the branch of the tree which most closely corresponds to the .tau.+1 samples of the signal; and releasing the symbol of the first metric of the determined branch. The released symbol is the identity of the sample. Preferably, the receiving step includes the step of receiving .tau.+1 sequential samples, with each sample corresponding to a unique portion of the signal, and the searching step includes the step of comparing each symbol of each metric of each path of each branch with the symbol's corresponding sample in regard to time. An apparatus for identifying a signal subject to intersymbol interference comprising a device for implementing a fixed delay tree search on samples of the signal to determine a symbol associated with a given sample and then releasing that sample. The apparatus also is comprised of a device for inputting samples to the implementing a device.
摘要翻译： 一种用于识别遭受码间干扰的信号的方法，包括以下步骤：接收τ为大于或等于1的信号的τ+ 1样本; 搜索已知值的树表示以确定与信号的τ+1样本最接近的树的分支的路径; 并释放所确定的分支的第一度量的符号。 释放的符号是样本的身份。 优选地，接收步骤包括接收τ+ 1个序列样本的步骤，其中每个样本对应于信号的唯一部分，并且搜索步骤包括将每个分支的每个路径的每个度量的每个符号与 符号相应的样本在时间上。 用于识别遭受码间干扰的信号的装置，包括用于对信号样本实施固定延迟树搜索的装置，以确定与给定样本相关联的符号，然后释放该样本。 该装置还包括用于将样品输入到实施装置的装置。
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公开(公告)号：US5107103A
公开(公告)日：1992-04-21
申请号：US470818
申请日：1990-01-26
申请人： Andrew Gruss , Takeo Kanade , L. Richard Carley
发明人： Andrew Gruss , Takeo Kanade , L. Richard Carley
IPC分类号： G01S7/491 , H01L27/144 , H01L27/146
CPC分类号： H01L27/1443 , G01S17/48 , G01S7/4912 , H01L27/146
摘要： The present invention pertains to an integrated circuit. The integrated circuit comprises a sensor which produces a sensor signal corresponding to energy received. The integrated circuit is also comprised of a processing element connected to the sensor which receives the sensor signal only from the sensor and produces a processing signal corresponding to the sensor signal. Additionally, there is a memory connected to the processing element for receiving the processing signal and storing the processing signal. In a preferred embodiment, the integrated circuit is also comprised of a buffer connected to the sensor and the processing element for receiving the sensor signal and buffering the sensor signal for reception by the processing element. The sensor can include a photodiode which receives the sensor signal corresponding to light energy it receives. In a more preferred embodiment, the integrated circuit includes a photosensitive array comprised of cells for use in a light stripe rangefinder wherein a plane of light is moved across a scene. Each cell is able to detect and remember the time in which it observes the light intensity thereon.
摘要翻译： 本发明涉及集成电路。 集成电路包括传感器，该传感器产生对应于所接收的能量的传感器信号。 集成电路还包括连接到传感器的处理元件，该传感器仅从传感器接收传感器信号，并产生对应于传感器信号的处理信号。 此外，存在连接到处理元件的存储器，用于接收处理信号并存储处理信号。 在优选实施例中，集成电路还包括连接到传感器的缓冲器和用于接收传感器信号并缓冲传感器信号以供处理元件接收的处理元件。 传感器可以包括光电二极管，其接收对应于其接收的光能的传感器信号。 在更优选的实施例中，集成电路包括由用于光条测距仪的单元组成的光敏阵列，其中光平面在场景中移动。 每个电池都能够检测并记住它在其上观察光强度的时间。
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公开(公告)号：US20120274183A1
公开(公告)日：2012-11-01
申请号：US13549676
申请日：2012-07-16
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08222795B2
公开(公告)日：2012-07-17
申请号：US13246304
申请日：2011-09-27
IPC分类号： H01L41/09
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08030823B2
公开(公告)日：2011-10-04
申请号：US12321860
申请日：2009-01-26
IPC分类号： H01L41/08
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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