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    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    2.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效
    使用等离子体聚合的有机硅膜制造剥离掩模

    公开(公告)号：US4599243A

    公开(公告)日：1986-07-08

    申请号：US668361

    申请日：1984-11-05

    申请人： Harbans S. Sachdev ,  Krishna G. Sachdev

    发明人： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC分类号： G03F7/09 ,  B05D3/06

    CPC分类号： G03F7/094 ,  Y10S438/951

    摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    摘要翻译： 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。

    Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
    3.
    发明授权
    Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks 失效
    使用等离子体聚合硅胶膜制造剥离掩模

    公开(公告)号：US4562091A

    公开(公告)日：1985-12-31

    申请号：US668360

    申请日：1984-12-18

    申请人： Harbans S. Sachdev ,  Krishna G. Sachdev

    发明人： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC分类号： G03F7/09 ,  B05D3/06

    CPC分类号： G03F7/094

    摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    摘要翻译： 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。