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17 条记录 (耗时 0.03 秒)

    Process for making a compliant thermally conductive compound
    2.
    发明授权
    Process for making a compliant thermally conductive compound 失效
    制备柔性导热性化合物的方法

    公开(公告)号：US5213704A

    公开(公告)日：1993-05-25

    申请号：US760045

    申请日：1991-09-13

    申请人： Herbert R. Anderson, Jr. ,  Richard B. Booth ,  Lawrence D. David ,  Mark O. Neisser ,  Harbans S. Sachdev ,  Mark A. Takacs

    发明人： Herbert R. Anderson, Jr. ,  Richard B. Booth ,  Lawrence D. David ,  Mark O. Neisser ,  Harbans S. Sachdev ,  Mark A. Takacs

    IPC分类号： C09K5/08

    CPC分类号： C09K5/08

    摘要： A process for making a compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

    摘要翻译： 制造兼容导热的，优选介电的化合物的方法，其增强诸如双极型VLSI半导体芯片的大功率电气部件的功率耗散能力。 该化合物具有化学稳定的热传导和粘度特性; 在使用过程中不会进行相分离，可以以小的间隙施加，以使热传导最大化。 该化合物优选包括其中分散有热填料颗粒的液体载体和具有与热填料颗粒的煅烧表面反应的官能团的偶联剂，以及具有自缩合优先润湿热填料颗粒的官能团。 另外的添加剂如热解二氧化硅和聚异丁烯增强了在功能使用期间遇到的导热化合物的热 - 机械剪切力降解的相稳定性和抗性，例如波动的功率循环。

    Method for forming a film of dielectric material on an electric component
    7.
    发明授权
    Method for forming a film of dielectric material on an electric component 失效
    在电气部件上形成电介质材料的膜的方法

    公开(公告)号：US4654223A

    公开(公告)日：1987-03-31

    申请号：US839456

    申请日：1986-03-11

    申请人： Constance J. Araps ,  Steven M. Kandetzke ,  Mark A. Takacs

    发明人： Constance J. Araps ,  Steven M. Kandetzke ,  Mark A. Takacs

    IPC分类号： H01L21/312 ,  B05D5/12

    CPC分类号： H01L21/312

    摘要： Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomers are comprised of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof which can be crosslinked to form a three-dimensional network via sites at the vinyl or acetylenic end groups and sites at carbonyl groups contained within the polymeric chain. Use of these polymerizable oligomers permits utilization of low temperature methods of curing which reduce intrinsic and extrinsic stress within the cured dielectric film.

    摘要翻译： 通过原位固化端接有乙烯基和/或炔属端基的可聚合低聚物，在电子部件上形成薄介电膜。 可聚合低聚物由聚酰胺酸，聚酰胺酯，聚异酰亚胺及其混合物组成，它们可通过位于聚合物链内所含的乙烯基或炔属端基和位于羰基的位点而交联形成三维网络。 使用这些可聚合的低聚物允许利用低温固化方法，其降低固化的介电膜内的本征和外在应力。

    Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
    8.
    发明授权
    Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures 失效
    使用辐射敏感的可聚合低聚物生产用于半导体结构的聚酰亚胺负性抗蚀剂和平面化介电组分

    公开(公告)号：US4568601A

    公开(公告)日：1986-02-04

    申请号：US663017

    申请日：1984-10-19

    申请人： Constance J. Araps ,  George Czornyj ,  Steven M. Kandetzke ,  Mark A. Takacs

    发明人： Constance J. Araps ,  George Czornyj ,  Steven M. Kandetzke ,  Mark A. Takacs

    IPC分类号： C08G73/10 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762 ,  H01L21/00 ,  H01L27/12 ,  B44C1/22 ,  B32B3/28

    CPC分类号： H01L21/312 ,  C08G73/1071 ,  H01L21/76224 ,  Y10T428/2457

    摘要： The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

    摘要翻译： 可聚合低聚物的特定组的光敏性允许辐射诱导聚合。 因此，这种光敏性使得可聚合的低聚物通常用作光致抗蚀剂，并且当低聚物用于在半导体器件中制备隔离膜和沟槽时有利于原位固化。 当可聚合低聚物用于制造半导体结构和集成电路部件时，光敏性进一步使得能够使用简化的平坦化工艺。 具体地，可聚合的低聚物由聚N-取代的酰胺酸，相应的酰胺酯，相应的酰胺型异酰亚胺，相应的酰胺型或其混合物组成，其中可聚合低聚物的端基用乙烯基或乙炔基末端封端 组。

    Planarization process for organic filling of deep trenches
    9.
    发明授权
    Planarization process for organic filling of deep trenches 失效
    有机填充深沟的平面化过程

    公开(公告)号：US4665007A

    公开(公告)日：1987-05-12

    申请号：US766629

    申请日：1985-08-19

    申请人： Nancy R. Cservak ,  Susan K. Fribley ,  George R. Goth ,  Mark A. Takacs

    发明人： Nancy R. Cservak ,  Susan K. Fribley ,  George R. Goth ,  Mark A. Takacs

    IPC分类号： H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762 ,  G03C5/00

    CPC分类号： H01L21/312 ,  H01L21/76224

    摘要： Disclosed is a process for planarization of semiconductor structures having dielectric isolation regions. Specifically, the process is directed to planarization of an organic polyimide layer obtained following filling of deep trenches in a semiconductor substrate having high and low density trench regions with this material. After over-filling the trenches with the polyimide and obtaining a non-planar polyimide layer having a thickness much larger in the low trench density regions than that in the high density regions, a photoresist layer is applied thereover. The photoresist is then controllably exposed using a mask which is the complement or inverse of the mask used for imaging the trench patterns to obtain a thick blockout photoresist mask over the trenches and a thin wetting layer of photoresist over the remainder of the substrate. Next, by means of a thermal step, the blockout photoresist is caused to reflow to form a relatively thick photoresist layer over the high trench density regions and a thin photoresist layer over the low trench density regions, thereby exactly compensating for the non-planarity of the polyimide layer.

    摘要翻译： 公开了一种具有电介质隔离区域的半导体结构的平面化处理。 具体地，该方法涉及在具有这种材料的具有高和低密度沟槽区域的半导体衬底中填充深沟槽之后获得的有机聚酰亚胺层的平面化。 在用聚酰亚胺对沟槽进行过度填充之后，得到在低沟槽密度区域中比在高密度区域中厚度大得多的非平面的聚酰亚胺层，在其上施加光致抗蚀剂层。 然后使用掩模来控制光致抗蚀剂，该掩模是用于对沟槽图案进行成像的掩模的互补或反向，以在沟槽上获得厚的阻挡光刻胶掩模，并在衬底的其余部分上形成薄的光致抗蚀剂层。 接下来，通过热步骤，使阻挡光致抗蚀剂回流以在高沟槽密度区域上形成相对厚的光致抗蚀剂层，并在低沟槽密度区域上形成薄的光致抗蚀剂层，由此精确地补偿了非均匀性 聚酰亚胺层。

    Method for the fractionation of reactive terminated polymerizable oligomers
    10.
    发明授权
    Method for the fractionation of reactive terminated polymerizable oligomers 失效
    分离反应性封端的可聚合低聚物的方法

    公开(公告)号：US4622383A

    公开(公告)日：1986-11-11

    申请号：US759630

    申请日：1985-07-26

    申请人： Constance J. Araps ,  Steven M. Kandetzke ,  Mark A. Takacs

    发明人： Constance J. Araps ,  Steven M. Kandetzke ,  Mark A. Takacs

    IPC分类号： H01L21/312 ,  H01L21/762 ,  H01L23/532 ,  H05K1/00 ,  H05K1/03 ,  H05K3/46 ,  C08G69/26 ,  C08G69/34

    CPC分类号： H01L23/5329 ,  H01L21/312 ,  H01L21/76224 ,  H01L2924/0002 ,  H05K1/0346 ,  H05K3/4644 ,  H05K3/4676

    摘要： Acetylene or vinyl-terminated polymerizable oligomers of polyamic acid are fractionated to obtain an oligomer product having a molecular weight in the range of 2,000 to 4,000 which exhibits improved wetting and film forming properties. Fractionization is accomplished by dissolving the unfractionated polymerizable oligomer in a solvent in which the desired molecular weight fraction is soluble. The oligomer solution is passed through a filter which removes undissolved material having a molecular weight in excess of the desired molecular weight range. The filtrate is admixed with a hydrocarbon to precipitate the desired molecular weight fraction. Thereafter the collected solids can be redissolved in a ketonic solvent and the fractionation procedure repeated to further improve the molecular weight content of the fractionated oligomer.

    摘要翻译： 将聚酰胺酸的乙炔基或乙烯基封端的可聚合低聚物分馏，得到分子量在2,000至4000范围内的低聚物产物，其表现出改善的润湿和成膜性能。 通过将未分级的可聚合低聚物溶解在其中所需分子量分数可溶的溶剂中来完成分馏。 低聚物溶液通过过滤器，其去除分子量超过所需分子量范围的未溶解材料。 将滤液与烃混合以沉淀所需的分子量级分。 此后，收集的固体可以重新溶解在酮溶剂中，重复分馏步骤以进一步提高分级的低聚物的分子量。