公开(公告)号：US5115090A

公开(公告)日：1992-05-19

申请号：US503401

申请日：1990-03-30

申请人： Krishna G. Sachdev ,  John P. Hummel ,  Ranee W. Kwong ,  Robert N. Lang ,  Leo L. Linehan ,  Harbans S. Sachdev

发明人： Krishna G. Sachdev ,  John P. Hummel ,  Ranee W. Kwong ,  Robert N. Lang ,  Leo L. Linehan ,  Harbans S. Sachdev

IPC分类号： C08G73/10 ,  C08L79/08 ,  H01L21/312 ,  H01L23/29 ,  H01L23/498 ,  H01L23/532 ,  H05K1/00

CPC分类号： H01L23/5329 ,  C08G73/1014 ,  H01L23/293 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K3/4676

摘要： Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.

公开(公告)号：US5114826A

公开(公告)日：1992-05-19

申请号：US458130

申请日：1989-12-28

申请人： Ranee W. Kwong ,  Harbans S. Sachdev ,  Krishna G. Sachdev

发明人： Ranee W. Kwong ,  Harbans S. Sachdev ,  Krishna G. Sachdev

IPC分类号： C08F2/46 ,  C08G73/10 ,  C08K5/23 ,  C08K5/28 ,  C08L79/08 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/0758 ,  G03F7/0387 ,  G03F7/039 ,  H01L2224/11334

摘要： New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.

公开(公告)号：US4665006A

公开(公告)日：1987-05-12

申请号：US806597

申请日：1985-12-09

申请人： Krishna G. Sachdev ,  Ranee W. Kwong ,  Mahmoud M. Khojasteh ,  Harbans S. Sachdev

发明人： Krishna G. Sachdev ,  Ranee W. Kwong ,  Mahmoud M. Khojasteh ,  Harbans S. Sachdev

IPC分类号： G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03C5/16 ,  G03C1/495 ,  G03F7/26

CPC分类号： G03F7/0757 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123 ,  Y10S430/126

摘要： A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.

摘要翻译： 公开了一种光致抗蚀剂组合物，其包含具有由鎓盐敏化的有机聚硅氧烷部分的可辐射可分裂聚合物体系。 有用的含有机聚硅氧烷的聚合物包括聚硅氧烷 - 聚碳酸酯嵌段共聚物和聚有机硅氧烷聚芳酯。 由光致抗蚀剂组合物制成的抗蚀剂膜显示出高灵敏度，高热稳定性和耐氧反应离子蚀刻性能，这使得它们对于干蚀刻工艺是可取的，以实现亚微米分辨率。

公开(公告)号：US4692205A

公开(公告)日：1987-09-08

申请号：US824893

申请日：1986-01-31

申请人： Krishna G. Sachdev ,  Ranee W. Kwong ,  Mani R. Gupta ,  Mark S. Chace ,  Harbans S. Sachdev

发明人： Krishna G. Sachdev ,  Ranee W. Kwong ,  Mani R. Gupta ,  Mark S. Chace ,  Harbans S. Sachdev

IPC分类号： H01L21/302 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  B29C37/00

CPC分类号： G03F7/094 ,  G03F7/0757 ,  H01L21/0272 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/7688 ,  H01L21/76885 ,  Y10S428/901 ,  Y10S438/95 ,  Y10S438/97 ,  Y10T29/49155 ,  Y10T428/12396 ,  Y10T428/12528 ,  Y10T428/31721

摘要： The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

摘要翻译： 描述了在制造多层金属结构中使用含硅聚酰亚胺作为金属剥离工艺中的氧蚀刻阻挡层和作为氧蚀刻停止。 实际上，将剥离层施加在基底上，随后是一层含硅聚酰亚胺和一层光致抗蚀剂。 光致抗蚀剂被光刻图案化，并且使用CF 4 / O 2气体混合物通过反应离子蚀刻将显影的图像转移到含硅聚酰亚胺层中。 在使用氧的反应离子蚀刻工艺中将图案转移到剥离层。 随后的毯式金属蒸发，随后去除剥离模板，导致基材上所需的金属图案。 在替代实施例中，含硅聚酰亚胺可以掺杂光活性化合物，减少了在顶部上分离的光致抗蚀剂成像层的需要。

公开(公告)号：US5240812A

公开(公告)日：1993-08-31

申请号：US793884

申请日：1991-11-18

申请人： Willard E. Conley ,  Ranee W. Kwong ,  Richard J. Kvitek ,  Robert N. Lang ,  Christopher F. Lyons ,  Steve S. Miura ,  Wayne M. Moreau ,  Harbans S. Sachdev ,  Robert L. Wood

发明人： Willard E. Conley ,  Ranee W. Kwong ,  Richard J. Kvitek ,  Robert N. Lang ,  Christopher F. Lyons ,  Steve S. Miura ,  Wayne M. Moreau ,  Harbans S. Sachdev ,  Robert L. Wood

IPC分类号： G03F7/09

CPC分类号： G03F7/092

摘要： A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

摘要翻译： 用作酸催化抗蚀剂组合物的外涂膜的保护材料，其包含聚合物成膜化合物，其膜对有机和无机碱的蒸气是不可渗透的。

公开(公告)号：US5296332A

公开(公告)日：1994-03-22

申请号：US796155

申请日：1991-11-22

申请人： Harbans S. Sachdev ,  Willard E. Conley ,  Premlatha Jagannathan ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Leo L. Linehan ,  Steve S. Muira ,  Randolph J. Smith

发明人： Harbans S. Sachdev ,  Willard E. Conley ,  Premlatha Jagannathan ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Leo L. Linehan ,  Steve S. Muira ,  Randolph J. Smith

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  G03C5/56 ,  G03C1/73 ,  G03C1/76

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/038

摘要： High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

摘要翻译： 用于深UV，i线电子束和x射线光刻的高灵敏度，高对比度，热稳定抗蚀剂组合物。 这些组合物包括具有用于亲电取代活化的芳环的成膜聚合物，形成羟基稳定的碳鎓离子的酸催化交联剂和光酸产生剂。 组合物是可显影的水性基质。

公开(公告)号：US4978594A

公开(公告)日：1990-12-18

申请号：US258530

申请日：1988-10-17

申请人： James A. Bruce ,  Michael L. Kerbaugh ,  Ranee W. Kwong ,  Tanya N. Lee ,  Harold G. Linde ,  Harbans S. Sachdev

发明人： James A. Bruce ,  Michael L. Kerbaugh ,  Ranee W. Kwong ,  Tanya N. Lee ,  Harold G. Linde ,  Harbans S. Sachdev

IPC分类号： H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

CPC分类号： G03F7/094 ,  G03F7/405

摘要： A process for forming a pattern on a substrate utilizing photolithographic techniques. In this process a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the structure is reactive ion etched to transfer the pattern to the underlying substrate. The fluorine component provides an underlying structure free of residue and cracking.

公开(公告)号：US20130052593A1

公开(公告)日：2013-02-28

申请号：US13221248

申请日：2011-08-30

申请人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

发明人： Javier J. Perez ,  Dario L. Goldfarb ,  Ranee W. Kwong ,  Libor Vyklicky

IPC分类号： G03F7/20

CPC分类号： G03F7/405

摘要： An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.

摘要翻译： 在基材的表面上形成粘合促进剂层作为粘合促进剂层，在其上施加光致抗蚀剂。 光致抗蚀剂被光刻曝光。 将光刻曝光的光致抗蚀剂的可溶部分溶解在包括四烷基氢氧化铵的显影剂溶液中。 四烷基氢氧化铵盐以结晶形式形成在基材的表面上。 将水溶性酸性聚合物层施加在基材的表面上以溶解四烷基氢氧化铵盐。 将水溶性酸性聚合物层用水冲洗掉，由此提供在基材上不包括四烷基氢氧化铵盐的清洁表面。 随后的工艺可以在衬底上进行，其被显影的光致抗蚀剂的剩余部分覆盖，并且在未被光致抗蚀剂覆盖的区域中具有清洁的表面。

公开(公告)号：US06927015B2

公开(公告)日：2005-08-09

申请号：US10920762

申请日：2004-08-18

申请人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

发明人： Mahmoud M. Khojasteh ,  Timothy M. Hughes ,  Ranee W. Kwong ,  Pushkara Rao Varanasi ,  William R. Brunsvold ,  Margaret C. Lawson ,  Robert D. Allen ,  David R. Medeiros ,  Ratnam Sooriyakumaran ,  Phillip Brock

IPC分类号： C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  G03F7/40 ,  G03F7/11

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

公开(公告)号：US06689540B2

公开(公告)日：2004-02-10

申请号：US10040446

申请日：2002-01-09

申请人： Ari Aviram ,  C. Richard Guarnieri ,  Wu-Song Huang ,  Ranee W. Kwong ,  David R. Medeiros

发明人： Ari Aviram ,  C. Richard Guarnieri ,  Wu-Song Huang ,  Ranee W. Kwong ,  David R. Medeiros

IPC分类号： G03F740

CPC分类号： G03F7/0758 ,  C08F8/42 ,  C08F257/02 ,  C08L51/003 ,  C08L51/08 ,  G03F7/038 ,  G03F7/039 ,  Y10S430/143 ,  Y10S430/168 ,  C08L2666/02

摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.

摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。