公开(公告)号：US06724679B2

公开(公告)日：2004-04-20

申请号：US10126622

申请日：2002-04-22

申请人： Tsutomu Nagasawa ,  Hideki Yonetani ,  Kozo Ishida ,  Shinichi Jinbo ,  Makoto Suwa ,  Tadaaki Yamauchi ,  Junko Matsumoto ,  Zengcheng Tian ,  Takeo Okamoto

发明人： Tsutomu Nagasawa ,  Hideki Yonetani ,  Kozo Ishida ,  Shinichi Jinbo ,  Makoto Suwa ,  Tadaaki Yamauchi ,  Junko Matsumoto ,  Zengcheng Tian ,  Takeo Okamoto

IPC分类号： G11C800

CPC分类号： G11C29/12005 ,  G11C8/12 ,  G11C29/26 ,  G11C2029/1206

摘要： A semiconductor memory device includes banks, predecoders, a latch circuit, a counter, a fuse and buffers. The bank includes a plurality of memory cells arranged in rows and columns, and others. The predecoders are disposed in a central portion of the semiconductor memory device. The predecoder produces a predecode signal for selecting each of the banks based on a bank address received from the buffer, and outputs the predecode signal to the banks. The predecoder produces the predecode signal for selecting each of the banks based on the bank address, and outputs the predecode signal to the banks. Consequently, interconnections in the central portion can be reduced in number.

摘要翻译： 半导体存储器件包括存储体，预解码器，锁存电路，计数器，熔丝和缓冲器。 存储体包括以行和列排列的多个存储单元。 预解码器设置在半导体存储器件的中心部分。 预解码器基于从缓冲器接收到的存储体地址产生用于选择每个存储体的预解码信号，并将预解码信号输出到存储体。 预解码器产生用于基于存储体地址选择每个存储体的预解码信号，并将预解码信号输出到存储体。 因此，可以减少中心部分的互连。

公开(公告)号：US06625050B2

公开(公告)日：2003-09-23

申请号：US10143931

申请日：2002-05-14

申请人： Makoto Suwa ,  Shinichi Jinbo ,  Zengcheng Tian ,  Takeo Okamoto ,  Kozo Ishida ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Junko Matsumoto

发明人： Makoto Suwa ,  Shinichi Jinbo ,  Zengcheng Tian ,  Takeo Okamoto ,  Kozo Ishida ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Junko Matsumoto

IPC分类号： G11C506

CPC分类号： B82Y10/00 ,  H01L23/50 ,  H01L24/06 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/13091 ,  H03K3/356008 ,  H01L2224/45099 ,  H01L2924/00

摘要： Pad lines are placed on the peripheral region of a chip along EAST band and WEST band (E/W band). In order to allow the chip with pads arranged on the peripheral region to be adaptable to a TSOP, VDD and VSS pads are arranged on the edge region on NORTH band and SOUTH band (N/S band) near the center of the N/S band. Moreover, in consideration of frame design for the TSOP, some pads on the ends of the pad lines among the pads included in the pad lines are arranged in reverse order relative to the order of pins. Further, VDDQ and VSSQ pads are arranged in the same order as that of pins for a package which requires no consideration of frame design. On the other hand, for use in a BGA package, VDD and VSS pads are arranged in pairs at respective ends of the pad lines. A semiconductor memory device with this pad arrangement is accordingly adaptable to various types of packages.

公开(公告)号：US06813210B2

公开(公告)日：2004-11-02

申请号：US10300591

申请日：2002-11-21

申请人： Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Makoto Suwa ,  Junko Matsumoto ,  Zengcheng Tian

发明人： Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Makoto Suwa ,  Junko Matsumoto ,  Zengcheng Tian

IPC分类号： G11C700

CPC分类号： G11C7/04 ,  G11C11/406

摘要： The semiconductor memory device includes a refresh timer for determining a refresh cycle of self-refresh operation. The refresh timer includes a voltage regulator, a ring oscillator and a counter. The voltage regulator generates a bias voltage having positive temperature characteristics. The ring oscillator varies an oscillation cycle of a pulse signal according to the bias voltage. The counter counts a prescribed number of pulse signals and generates a refresh signal for executing refresh operation. The semiconductor memory device thus varies the refresh cycle according to a temperature change, and executes refresh operation with an appropriate refresh cycle.

摘要翻译： 半导体存储器件包括用于确定自刷新操作的刷新周期的刷新定时器。 刷新定时器包括电压调节器，环形振荡器和计数器。 电压调节器产生具有正温度特性的偏置电压。 环形振荡器根据偏置电压来改变脉冲信号的振荡周期。 计数器对规定数量的脉冲信号进行计数，并产生用于执行刷新操作的刷新信号。 因此，半导体存储器件根据温度变化而改变刷新周期，并且以适当的刷新周期执行刷新操作。

公开(公告)号：US06724223B2

公开(公告)日：2004-04-20

申请号：US10287643

申请日：2002-11-05

申请人： Tetsuichiro Ichiguchi ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Zengcheng Tian ,  Makoto Suwa ,  Junko Matsumoto ,  Takeo Okamoto ,  Hideki Yonetani

发明人： Tetsuichiro Ichiguchi ,  Tsutomu Nagasawa ,  Tadaaki Yamauchi ,  Zengcheng Tian ,  Makoto Suwa ,  Junko Matsumoto ,  Takeo Okamoto ,  Hideki Yonetani

IPC分类号： H03K190175

CPC分类号： G11C7/225 ,  G11C5/14 ,  G11C7/22 ,  G11C11/4074 ,  G11C11/4076 ,  H01L27/0255

摘要： A clock buffer of a DRAM includes: a first NAND gate which is driven by a first internal power supply voltage (2.5 V) and which determines the level of an input clock signal if the DRAM is used for a TTL-system interface (MLV=2.5 V); and a second NAND gate which is driven by a second internal power supply voltage (1.8 V) and which determines the level of the input clock signal if the DRAM is used for a 1.8 V-system interface (MLV=0 V). Accordingly, in each of the first and second NAND gates, sizes of four MOS transistors can be set at optimum values, respectively.

摘要翻译： DRAM的时钟缓冲器包括：第一NAND门，其由第一内部电源电压（2.5V）驱动，并且如果DRAM用于TTL系统接口，则确定输入时钟信号的电平（MLV = 2.5 V）; 以及第二NAND门，其由第二内部电源电压（1.8V）驱动，并且如果DRAM用于1.8V系统接口（MLV = 0V），则确定输入时钟信号的电平。 因此，在第一和第二NAND门的每一个中，四个MOS晶体管的尺寸可以分别被设定为最佳值。

公开(公告)号：US06873563B2

公开(公告)日：2005-03-29

申请号：US10390886

申请日：2003-03-19

申请人： Makoto Suwa ,  Junko Matsumoto ,  Tadaaki Yamauchi ,  Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Zengcheng Tian

发明人： Makoto Suwa ,  Junko Matsumoto ,  Tadaaki Yamauchi ,  Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Zengcheng Tian

IPC分类号： H01L27/04 ,  G11C5/00 ,  G11C5/02 ,  G11C5/06 ,  G11C8/00 ,  G11C11/34 ,  G11C11/401 ,  G11C11/406 ,  G11C11/407 ,  G11C11/409 ,  H01L21/822 ,  H01L23/50 ,  H01L27/10 ,  H02J1/00

CPC分类号： G11C5/025 ,  G11C7/1045 ,  G11C8/10 ,  G11C11/406 ,  G11C11/40618 ,  G11C11/4093 ,  G11C2207/105 ,  G11C2211/4061 ,  H01L2224/32145 ,  H01L2924/01019 ,  H01L2924/01037 ,  H01L2924/01068 ,  H01L2924/01087 ,  H01L2924/13091 ,  H01L2924/00

摘要： Data pad regions are arranged in four divided regions of a semiconductor memory chip of a rectangular shape, respectively, and data pads are selectively utilized in each of the four divided regions in accordance with a word structure. Thus, it is possible to implement a semiconductor memory chip capable of being assembled in both a single chip package and a multi chip package.

摘要翻译： 数据焊盘区域分别布置在矩形的半导体存储器芯片的四个分割区域中，并且根据字结构在四个划分的区域中的每一个中选择性地使用数据焊盘。 因此，可以实现能够组装在单个芯片封装和多芯片封装中的半导体存储器芯片。

公开(公告)号：US06954103B2

公开(公告)日：2005-10-11

申请号：US10427968

申请日：2003-05-02

申请人： Tadaaki Yamauchi ,  Junko Matsumoto ,  Takeo Okamoto ,  Makoto Suwa ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Zengcheng Tian

发明人： Tadaaki Yamauchi ,  Junko Matsumoto ,  Takeo Okamoto ,  Makoto Suwa ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Zengcheng Tian

IPC分类号： H01L27/04 ,  G11C5/14 ,  G11C11/407 ,  G11C11/4074 ,  H01L21/822 ,  G05F1/46

CPC分类号： G11C11/4074 ,  G11C5/14

摘要： A manner of generating internal voltages such as a high voltage, an intermediate voltage and an internal power supply voltage is switched in accordance with a power supply level setting signal. When the voltage level of an external power supply voltage is low, a current drive transistor receiving an output of a comparing circuit and an auxiliary drive transistor are forcedly set in a conductive state, and external power supply voltage is transmitted on an internal power supply line. At this time, the comparing operation of the comparing circuit is stopped. When the level of the external power supply voltage is high, the comparing circuit is activated down convert the external power supply voltage for generating a peripheral power supply voltage on the internal power supply line.

摘要翻译： 根据电源电平设定信号切换产生高电压，中间电压和内部电源电压等内部电压的方式。 当外部电源电压的电压低时，接收比较电路和辅助驱动晶体管的输出的电流驱动晶体管被强制设定在导通状态，外部电源电压在内部电源线 。 此时，比较电路的比较动作停止。 当外部电源电压为高电平时，比较电路被激活，转换外部电源电压以产生内部电源线上的外围电源电压。

公开(公告)号：US06775177B2

公开(公告)日：2004-08-10

申请号：US10298648

申请日：2002-11-19

申请人： Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Makoto Suwa ,  Zengcheng Tian ,  Tadaaki Yamauchi ,  Junko Matsumoto

发明人： Takeo Okamoto ,  Tetsuichiro Ichiguchi ,  Hideki Yonetani ,  Tsutomu Nagasawa ,  Makoto Suwa ,  Zengcheng Tian ,  Tadaaki Yamauchi ,  Junko Matsumoto

IPC分类号： G11C1124

CPC分类号： G11C11/405 ,  G11C7/1045 ,  G11C8/08 ,  G11C8/10 ,  G11C11/4087

摘要： A row address decoder of a semiconductor memory device generates internal row address signals RAD and /RAD by switching most significant bit and least significant bit of row address signals RA and /RA that correspond to address signals A0 to A11, respectively. In a twin cell mode, the least significant bits RAD and /RAD of the internal row address signals corresponding to the most significant bits RA and /RA of the row address signal that are not used are selected simultaneously by row address decoder, and two adjacent word lines are activated simultaneously. Consequently, the configuration of memory cell in the semiconductor memory device can electrically be switched from the normal single memory cell type to the twin memory cell type.

摘要翻译： 通过切换行地址信号RA <0:11>和/ RA的最高有效位和最低有效位，半导体存储器件的行地址解码器产生内部行地址信号RAD <0:11>和/ RAD <0:11> 分别对应于地址信号A0至A11的<0:11>。 在双胞模式中，对应于不是行地址信号的最高有效位RA 11和/ RA 11的内部行地址信号的最低有效位RAD <0>和/ RAD <0> 使用的同时由行地址解码器选择，并且两个相邻的字线同时被激活。 因此，半导体存储器件中的存储单元的配置可以从正常的单个存储器单元类型切换到双存储单元类型。

公开(公告)号：US06784718B2

公开(公告)日：2004-08-31

申请号：US10231132

申请日：2002-08-30

申请人： Takeo Okamoto ,  Tadaaki Yamauchi ,  Shinichi Jinbo ,  Makoto Suwa ,  Junko Matsumoto

发明人： Takeo Okamoto ,  Tadaaki Yamauchi ,  Shinichi Jinbo ,  Makoto Suwa ,  Junko Matsumoto

IPC分类号： H03L500

CPC分类号： G11C7/1087 ,  G11C5/147 ,  G11C7/1078 ,  G11C7/22 ,  G11C7/222

摘要： An input circuit includes a gate circuit receiving an output power supply voltage that determines the logic level of an input signal or a comparison circuit receiving an input signal and a reference voltage depending on the output power supply voltage supplied from a pad different from a power supply pad for an output circuit. Even if the output power supply voltage varies to cause the input signal to change, whether the input signal is at H level or L level can accurately be determined and an internal signal is generated correctly

摘要翻译： 输入电路包括：门电路，其接收决定输入信号的逻辑电平的输出电源电压或者接收输入信号的比较电路，以及取决于从不同于电源的焊盘提供的输出电源电压的基准电压 用于输出电路的焊盘。 即使输出电源电压变化，导致输入信号变化，输入信号是否处于H电平或L电平，可以准确地确定内部信号是否正确生成

公开(公告)号：US06717460B2

公开(公告)日：2004-04-06

申请号：US10211289

申请日：2002-08-05

申请人： Tadaaki Yamauchi ,  Takeo Okamoto ,  Junko Matsumoto ,  Zengcheng Tian

发明人： Tadaaki Yamauchi ,  Takeo Okamoto ,  Junko Matsumoto ,  Zengcheng Tian

IPC分类号： G05F110

CPC分类号： G11C7/109 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074

摘要： A level conversion circuit is provided, at an output, with an initialization circuit for setting the output signal of the level conversion circuit for generating a power cut enable signal controlling a deep power down mode to a predetermined inactive state upon power up. The initialization circuit is constituted by, for example, a capacitive element connected to the output node of the level conversion circuit to pull up the voltage of the output node upon power up, and a latch circuit latching the voltage level of the output node. When power is on, the power cut enable signal is forcibly inactivated by the initialization circuit to generate a periphery power supply voltage. The internal node of the level conversion circuit is initialized according to the output signal of a control circuit receiving the periphery power supply voltage as an operating power supply voltage. In semiconductor memory device having a deep power down mode, an internal voltage is generated reliably and properly upon power up of an internal voltage.

摘要翻译： 在输出端提供电平转换电路，该初始化电路用于设置电平转换电路的输出信号，用于在上电时产生控制深度掉电模式至预定非活动状态的掉电使能信号。 初始化电路例如由与电平转换电路的输出节点连接的电容元件构成，以在上电时上拉输出节点的电压，以及锁存电路来锁存输出节点的电压电平。 当电源接通时，断电启动信号被初始化电路强制停用，以产生外围电源电压。 电平转换电路的内部节点根据接收外围电源电压的控制电路的输出信号作为工作电源电压进行初始化。 在具有深度掉电模式的半导体存储器件中，在内部电压上电时可靠且可靠地产生内部电压。

公开(公告)号：US06765838B2

公开(公告)日：2004-07-20

申请号：US10209901

申请日：2002-08-02

申请人： Junko Matsumoto ,  Tadaaki Yamauchi ,  Takeo Okamoto

发明人： Junko Matsumoto ,  Tadaaki Yamauchi ,  Takeo Okamoto

IPC分类号： G11C700

CPC分类号： G11C11/40622 ,  G11C11/406

摘要： A refresh array activating signal is activated in accordance with a refresh request and specific address bit(s) of a refresh address. Specific lower bit(s) of a refresh address counter is (are) utilized as the specific address bit(s) of the refresh address, and the specific address bit(s) is (are) utilized as upper bit(s) of the refresh address. Thus, in the self-refresh mode, refresh can be performed for a prescribed address region at uniform intervals, with a lengthened refresh interval, consuming less current. A semiconductor memory device is provided which allows current consumption to be distributed on a time basis and to be reduce in a self-refresh mode is provided.

摘要翻译： 根据刷新请求和刷新地址的特定地址位激活刷新阵列激活信号。 刷新地址计数器的特定低位用作刷新地址的特定地址位，并且特定地址位用作（的）较高位 刷新地址。 因此，在自刷新模式下，可以以规定的地址区域以均匀的间隔进行刷新，延长刷新间隔，消耗较少的电流。 提供了一种半导体存储器件，其提供了在时间基础上分布电流消耗并且提供了自刷新模式中的电流消耗。