-
公开(公告)号:US20100295098A1
公开(公告)日:2010-11-25
申请号:US12822328
申请日:2010-06-24
申请人: Masahiro SUGIMOTO , Tetsu KACHI , Yoshitaka NAKANO , Tsutomu UESUGI , Hiroyuki UEDA , Narumasa SOEJIMA
发明人: Masahiro SUGIMOTO , Tetsu KACHI , Yoshitaka NAKANO , Tsutomu UESUGI , Hiroyuki UEDA , Narumasa SOEJIMA
IPC分类号: H01L29/778 , H01L21/335
CPC分类号: H01L29/778 , H01L21/28 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.
摘要翻译: 半导体器件具有其中堆叠p-GaN层,SI-GaN层和AlGaN层的堆叠结构,并且具有形成在AlGaN层的顶表面侧的栅电极。 AlGaN层的带隙比p-GaN层和SI-GaN层的带隙宽。 此外,SI-GaN层的杂质浓度小于1×1017cm-3。 包括III-V半导体的半导体器件可以具有稳定的常关断操作。
-
公开(公告)号:US20100044753A1
公开(公告)日:2010-02-25
申请号:US12544451
申请日:2009-08-20
IPC分类号: H01L29/205 , H01L29/78
CPC分类号: H01L29/2003 , H01L21/28264 , H01L29/41766 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/7787 , H01L29/7788
摘要: A nitride semiconductor device 2 comprises a nitride semiconductor layer 10. A gate insulating film 16 is formed on the surface of the nitride semiconductor layer 10. The gate insulating film 16 includes a portion composed of an aluminum nitride film 15 and a portion composed of an insulating material 14 that contains at least one of oxygen or silicon. A region W2 of the nitride semiconductor layer 10 facing the aluminum nitride film 15 is included in a region W1 of the nitride semiconductor layer 10 facing a gate electrode 18. The nitride semiconductor device 2 may further comprise a nitride semiconductor lower layer 8. The nitride semiconductor layer 10 may be stacked on the surface of the nitride semiconductor lower layer 8. The nitride semiconductor layer 10 may have a larger band gap than that of the nitride semiconductor lower layer 8 and have a heterojunction formed there between.
摘要翻译: 氮化物半导体器件2包括氮化物半导体层10.栅极绝缘膜16形成在氮化物半导体层10的表面上。栅极绝缘膜16包括由氮化铝膜15构成的部分和由 包含氧或硅中的至少一种的绝缘材料14。 面向氮化铝膜15的氮化物半导体层10的区域W2包含在氮化物半导体层10的面向栅极电极18的区域W1中。氮化物半导体器件2还可以包括氮化物半导体下层8.氮化物半导体层 半导体层10可以堆叠在氮化物半导体下层8的表面上。氮化物半导体层10可以具有比氮化物半导体下层8更大的带隙,并且在其间形成异质结。
-
3.
公开(公告)号:US20120161154A1
公开(公告)日:2012-06-28
申请号:US13330835
申请日:2011-12-20
申请人: Tomohiro MIMURA , Shinichiro MIYAHARA , Hidefumi TAKAYA , Masahiro SUGIMOTO , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA , Yukihiko WATANABE
发明人: Tomohiro MIMURA , Shinichiro MIYAHARA , Hidefumi TAKAYA , Masahiro SUGIMOTO , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA , Yukihiko WATANABE
IPC分类号: H01L29/78 , H01L21/336
CPC分类号: H01L29/7813 , H01L29/045 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/66068 , H01L29/7397
摘要: An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.
摘要翻译: SiC半导体器件包括衬底,漂移层,基极区域,源极区域,沟槽,栅极氧化膜,栅电极,源电极和漏电极。 基板具有作为主表面的Si面。 源区具有Si面。 沟槽从源极区域的表面提供到比基部区域更深的部分并且在一个方向上纵向延伸并且具有Si面底部。 沟槽具有倒锥形形状,至少在与基部区域接触的部分处,入口部分处的宽度比底部宽。
-
4.
公开(公告)号:US20110291110A1
公开(公告)日:2011-12-01
申请号:US13117575
申请日:2011-05-27
申请人: Naohiro SUZUKI , Hideo MATSUKI , Masahiro SUGIMOTO , Hidefumi TAKAYA , Jun MORIMOTO , Tsuyoshi ISHIKAWA , Narumasa SOEJIMA , Yukihiko WATANABE
发明人: Naohiro SUZUKI , Hideo MATSUKI , Masahiro SUGIMOTO , Hidefumi TAKAYA , Jun MORIMOTO , Tsuyoshi ISHIKAWA , Narumasa SOEJIMA , Yukihiko WATANABE
IPC分类号: H01L29/12 , H01L29/78 , H01L21/336
CPC分类号: H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.
摘要翻译: 碳化硅半导体器件包括衬底,漂移层,基极区域,源极区域,沟槽,栅极绝缘层,栅极电极,源极电极,漏极电极和深层。 深层设置在基底区域下方并且位于比沟槽更深的深度。 深层在与沟槽的纵向方向交叉的方向上分成多个部分。 这些部分包括设置在与沟槽相对应的位置处的一组部分,其在沟槽的纵向方向上以相等的间隔布置。 该组部分围绕沟槽的底部的角落。
-
公开(公告)号:US20120273801A1
公开(公告)日:2012-11-01
申请号:US13450639
申请日:2012-04-19
申请人: Hiroki WATANABE , Shinichiro MIYAHARA , Masahiro SUGIMOTO , Hidefumi TAKAYA , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
发明人: Hiroki WATANABE , Shinichiro MIYAHARA , Masahiro SUGIMOTO , Hidefumi TAKAYA , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
IPC分类号: H01L29/24
CPC分类号: H01L29/7813 , H01L29/045 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7397
摘要: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.
摘要翻译: SiC半导体器件包括:SiC衬底,包括第一或第二导电类型层和第一导电类型漂移层,并且包括具有偏移方向的主表面; 设置在所述漂移层上并具有纵向方向的沟槽; 以及通过栅极绝缘膜设置在沟槽中的栅电极。 沟槽的侧壁提供通道形成表面。 垂直半导体器件根据施加到栅电极的栅极电压与沟道形成表面一起流动电流。 SiC衬底的偏移方向垂直于沟槽的纵向方向。
-
公开(公告)号:US20120142173A1
公开(公告)日:2012-06-07
申请号:US13308721
申请日:2011-12-01
申请人: Hiroki WATANABE , Yasuo KITOU , Yasushi FURUKAWA , Kensaku YAMAMOTO , Hidefumi TAKAYA , Masahiro SUGIMOTO , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
发明人: Hiroki WATANABE , Yasuo KITOU , Yasushi FURUKAWA , Kensaku YAMAMOTO , Hidefumi TAKAYA , Masahiro SUGIMOTO , Yukihiko WATANABE , Narumasa SOEJIMA , Tsuyoshi ISHIKAWA
CPC分类号: H01L21/0262 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/02658 , H01L21/046 , H01L21/0475 , H01L29/04
摘要: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.
摘要翻译: SiC单晶的制造方法包括制备SiC衬底,将离子注入到SiC衬底的表面部分中以形成离子注入层,通过退火激活注入到SiC衬底的表面部分中的离子,化学蚀刻表面 以形成由SiC衬底中的螺纹位错引起的蚀刻坑,并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层,所述SiC生长层包括蚀刻的内壁 以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。
-
公开(公告)号:US20100013006A1
公开(公告)日:2010-01-21
申请号:US12502251
申请日:2009-07-14
IPC分类号: H01L29/78 , H01L21/336
CPC分类号: H01L29/8122 , H01L29/0623 , H01L29/0657 , H01L29/1029 , H01L29/1037 , H01L29/1075 , H01L29/1079 , H01L29/42316 , H01L29/7828 , H01L29/7832 , H01L29/7838 , H01L29/812
摘要: A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region. The gate electrode and the contact region are insulated by the insulating layer, and the gate electrode and the drift region are in direct contact to form a Schottky junction.
摘要翻译: 半导体器件具有具有表面层和p型半导体区域的半导体衬底,其中表面层包括接触区域,沟道区域和漂移区域,沟道区域与接触区域相邻并与其接触, 漂移区域与沟道区域相邻并且与沟道区域接触并且至少部分地包括n型杂质,并且p型半导体区域与漂移区域和沟道的后表面的至少一部分接触 区域,设置在所述表面层上并电连接到所述接触区域的主电极,设置在所述表面层上并且从所述接触区域的一部分的上方延伸到所述漂移区域的至少一部分之上的栅电极, 以及至少覆盖所述接触区域的部分并且至少覆盖所述漂移区域的部分的绝缘层。 栅极电极和接触区域被绝缘层绝缘,栅电极和漂移区域直接接触形成肖特基结。
-
公开(公告)号:US20100038681A1
公开(公告)日:2010-02-18
申请号:US12540230
申请日:2009-08-12
IPC分类号: H01L29/778
CPC分类号: H01L29/7787 , H01L29/0642 , H01L29/1033 , H01L29/2003 , H01L29/4232 , H01L29/42368 , H01L29/66462 , H01L29/7788
摘要: An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.
摘要翻译: 公开了一种HEMT型晶体管,其是常闭型,栅极阈值电压的变化小。 晶体管设置有p型区域,势垒区域,绝缘膜,栅极电极。 沟道区域连接到p型区域的上表面。 通道区域是n型或i型,并且设置有第一通道区域和第二通道区域。 阻挡区域与第一通道区域的上表面形成异质结。 绝缘膜连接到第二通道区域的上表面和阻挡区域的上表面。 栅电极经由绝缘膜面向第二沟道区和阻挡区。 第一通道区域和第二通道区域在电流通路中串联布置。
-
公开(公告)号:US20080142845A1
公开(公告)日:2008-06-19
申请号:US12000528
申请日:2007-12-13
IPC分类号: H01L29/778
CPC分类号: H01L29/7786 , H01L29/2003 , H01L29/4232 , H01L29/66462 , H01L29/7788 , H01L29/7789 , H01L29/78 , H01L29/7827
摘要: A HEMT has a drain region adapted to be electrically connected to a high voltage of an electric source, a source region adapted to be electrically connected to a low voltage of the electric source. A first semiconductor region is disposed between the drain region and the source region. A MIS structure and a heterostructure are disposed at a surface of the first semiconductor region. The MIS structure includes a gate electrode that faces a portion of a surface of the first semiconductor region with a gate insulating membrane therebetween. The heterostructure includes a second semiconductor region which makes contact with a rest portion of the surface of the first semiconductor region and has a wider band-gap than the first semiconductor region. The drain region and the source region are capable of being electrically connected with a structure in which the MIS structure 40 and the heterostructure are arranged in series.
摘要翻译: HEMT具有适于电连接到电源的高电压的漏极区域,适于电连接到电源的低电压的源极区域。 第一半导体区域设置在漏极区域和源极区域之间。 MIS结构和异质结构设置在第一半导体区域的表面。 MIS结构包括栅电极,其面对第一半导体区域的表面的一部分,栅极绝缘膜在其间。 异质结构包括与第一半导体区域的表面的其余部分接触并且具有比第一半导体区域更宽的带隙的第二半导体区域。 漏极区域和源极区域能够与MIS结构40和异质结构串联布置的结构电连接。
-
公开(公告)号:US20170084735A1
公开(公告)日:2017-03-23
申请号:US15365150
申请日:2016-11-30
申请人: Masahiro SUGIMOTO , Hidefumi TAKAYA , Akitaka SOENO , Jun MORIMOTO , DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人: Yuichi TAKEUCHI , Naohiro SUZUKI , Masahiro SUGIMOTO , Hidefumi TAKAYA , Akitaka SOENO , Jun MORIMOTO , Narumasa SOEJIMA , Yukihiko WATANABE
IPC分类号: H01L29/78 , H01L29/16 , H01L29/06 , H01L21/04 , H01L29/66 , H01L29/417 , H01L29/872 , H01L29/15 , H01L21/761
CPC分类号: H01L29/7811 , H01L21/046 , H01L21/0475 , H01L21/30604 , H01L21/308 , H01L21/761 , H01L21/8213 , H01L29/0615 , H01L29/063 , H01L29/0634 , H01L29/0661 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/157 , H01L29/158 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7813 , H01L29/861 , H01L29/872
摘要: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.
-
-
-
-
-
-
-
-
-